• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.4
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• pp.440-446
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• 2011

In this paper, a X-band 50 W pulsed solid state power amplifier(SSPA) is designed and fabricated for radar systems. The SSPA consists of a driver amplifier, a high power amplifier, and a pulse modulator. The high power stage employes four 25 W GaAs FET to deliver 50 W at X-band. To meet the stringent target specification for the SSPA, we used a new hybrid pulse switching method, which combine the advantage of pulse modulation and bias switching method. The fabricated SSPA shows a power gain of 44.2 dB, an output power of 50 W over a 1.12 GHz bandwidth. Also, pulse droop < 1 dB meet the design goals and a rise/fall time is less than 12.45 ns. Fabricated X-band pulsed SSPA size is compact with overall size of $150{\times}105{\times}30\;mm^3$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.6
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• pp.608-618
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• 2004

In this paper, modifying the diode star double balanced mixer of Maas, a novel resistive 60 GHz pHEMT MMIC star mixer is suggested. Due to star configuration, troublesome IF balun for ring configuration FET mixer is not necessary. In addition, the sysematic design method of dual balun through EM simulation is suggested rather than the design by inspection as Maas. The mixer circuit is fabricated as MMIC on CPW base using 0.1 um GaAs pHEMT Library of MINT in Dongguk University. The size is 1.5 ${\times}$ 1.5 $\textrm{mm}^2$ and its performance is adjustable by DC supply. It can be operated as both up and down converters and it shows the conversion loss of about 13∼18 ㏈ over the full V-band frequencies.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.12
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• pp.1841-1851
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• 1990

Self-aligned gate GaAs MESFETs using ion beam deposited tungsten applicable to GaAs LSI fabrication process have been fabricated. Silicon implanted samples were annealed using isothermla two step RTA process and conventional one step RTA process. The electrical and physicla characteristics of annealed samples were investigated using Hall and I-V measurements. As results of measurements, activation characteristics of the isothermal two step RTA process are better than those of one step annealed ones. Using the developed processes, GaAs SAFETs (Self-Aligned Gate FET) have been fabricated and electdrical characteirstics are measured. As results, subthreshold currents of SAGFETs are 6x10**-10 A/\ulcorner, that is compatible to conventional MESFET, maximum transconductances of 0.75\ulcorner gate MESFET using one step RTA process and 2\ulcorner gate MESFET using isothermal two step RTA process are 18 mS/mm, 41 mS/mm respectively.

• Proceedings of the Korean Magnestics Society Conference
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• 2006.11a
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• pp.72-72
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• 2006

• Proceedings of the Korean Magnestics Society Conference
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• 2008.12a
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• pp.154.2-154.2
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• 2008

• Journal of electromagnetic engineering and science
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• v.4 no.4
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• pp.143-149
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• 2004

This paper describes characteristics of the single-balanced low IF resistive FET mixer for the digital beam forming(DBF) receiver. This DBF receiver based on the direct conversion method is designed with Low IF I and Q channel. A radio frequency(RF), a local oscillator(LO) and an intermediate frequency(IF) considered in this research are 1950 MHz, 1940 MHz and 10 MHz, respectively. Super low noise HJ FET of NE3210S01 is considered in design. The measured results of the proposed mixer are observed IF output power of -22.8 dBm without spurious signal at 10 MHz, conversion loss of -12.8 dB, isolation characteristics of -20 dB below, 1 dB gain compression point(PldB) of -3.9 dBm, input third order intercept point(IIP3) of 20 dBm, output third order intercept point(OIP3) of 4 dBm and dynamic range of 30 dBm. The proposed mixer has 1.0 dB higher IIP3 than previously published single-balanced resistive and GaAs FET mixers, and has 3.0 dB higher IIP3 and 4.3 dB higher PldB than CMOS mixers. This mixer was fabricated on 0.7874 mm thick microstrip $substrate(\varepsilon_r=2.5)$ and the total size is $123.1\;mm\times107.6\;mm$.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.166-172
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• 1994

The fiber optic receiver, ETRI APD-FET 1.0, is developed for the application of optical communication. This fiber optic receiver includes PD sub-module and pre-amplifier case. A single lens system is introduced for the PD sub-module. The sub-module consists of the avalenche photodiode(APD), GRIN rod lens, and a single mode fiber. The above components are enclosed into the stainless steel 304L housings. By bevelling the fiber end, the single mode fiber provides less than ~ 28 dB of optical return loss. The area of image focus is controlled by adjusting the length of spacer located in-between the fiber and the GRIN rod lens. The laser welding technique is applied to achieve the maximum coupling efficiency for the joining of each housing. In the pre-amplifier case, GaAs FET pre-amplifier workes for photocurrent amplification and the thermister is mounted to control the APD bias. The performance of ETRI APD-FET1.0 shows the sensitivity of - 30.3 dBm at $10^{-10}$ BER(bit error rate) and 2.5 Gbps optical random signal of $2^{23}-1$ word length. The fiber optic receiver is one of the essensial parts of the transmission module for B-ISDN. Also, the above optical packaging technology will be adapted for the developement of 10 Gbps transmission application 2.5 Gbps 5 Gbps

• Proceedings of the IEEK Conference
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• 2004.06a
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• pp.205-208
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• 2004

본 논문에서는 직접 변환 방식의 가장 큰 문제점 중 하나인 DC 오프셋 문제를 개선하기 위한 방안으로, 서브 하모닉 저항성 믹서를 GaAs FET 소자를 이용하여 제작하였다. 측정된 결과 LO 주파수의 2 차 하모닉 성분을 이용하는 특성상 변환이득은 일반 믹서보다 큰 -15.0dB의 특성을 얻었다. 또한 별도의 대역통과 여파기를 사용하지 않고도 LO-IF 및 LO-RF 분리도 특성은 최소 48.2dB와 77.8dB의 양호한 특성을 나타내었다.

• The Journal of the Korea institute of electronic communication sciences
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• v.7 no.1
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• pp.1-7
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• 2012

In this paper, An X-band solid state power amplifier(SSPA) for pulse compressed microwave signal with 60Watt power and power added efficiency(PAE) above 30% is described. Designed 60Watt high power amplifier(HPA) was implemented by cascade coupled amplifiers, and it is consisted on three stage drive amplifiers with internally matched GaAs FET and one stage main power amplifier with an internally matched GaN HEMT. The designed SSPA has performance with more than total power gain 37dB and output power 48dBm(60-W) in condition of frequency range $9.41{\pm}0.03GHz$, pulse period width under 1ms and duty cycle under 10%. The implemented SSPA can apply to high quality digital marine radar applications with pulse compression technique.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.7
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• pp.628-639
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• 1991

A new efficient method for GaAs MESFET model parameter extraction is proposed, which is based on the bias dependance of each parameter characteristics derved from the analytic model. The requiremnts of the method are only small-signal S-parameter measurements under the three bias variations. Fixation of the linear model parameter values in the optimization process is made using the sensitivity information of the model parameter obtained by the weighted Broyden update method, it is to improve the uniqueness and reliablility of the solution. The validity of the extracted values of the FET model parameters is confirmed by comparing the simulation results with the experimental data.