• Journal of the Semiconductor & Display Technology
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• v.10 no.3
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• pp.29-33
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• 2011

Film growth rate and composition variation are numerically analyzed during the selective area growth of InGaN on the GaN triangular stripe microfacet in this study. Both the vapor phase diffusion and the surface diffusion are considered to determine the In composition on the InGaN surface. To obtain the In composition on the surface, flux of In atoms due to the surface diffusion is added to the concentration determined from the Laplace equation which is governing the gas phase diffusion. The solution model is validated by comparing the growth rates from the analyses to the experimental results of GaN and InN films. The In composition and resulting wave length are increased when the surface diffusion is considered. The In content is also increased according to the increasing mask width. The effect of mask width to the In content and wave length is increasing in the case of a small open region.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.9
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• pp.2087-2093
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• 2014

In this paper, an orthogonal matching pursuit (OMP) method combined with genetic algorithm (GA), named GAOMP, is proposed for sparse signal recovery. Some recent greedy algorithms such as SP, CoSaMP, and gOMP improved the reconstruction performance by deleting unsuitable atoms at each iteration. However they still often fail to converge to the solution because the support set could not avoid the local minimum during the iterations. Mutating the candidate support set chosen by the OMP algorithm, GAOMP is able to escape from the local minimum and hence recovers the sparse signal. Experimental results show that GAOMP outperforms several OMP based algorithms and the $l_1$ optimization method in terms of exact reconstruction probability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.59-60
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• 2005

The characteristics of GaN epitaxial layers grown on silicon (111) substrates by metalorganic vapor phase epitaxy have been investigated. The only control of AIN thickness was found to decrease the stress sufficiently for avoiding crack formation in an overgrown thick ($2.6{\mu}m$) CaN layer. X-ray diffraction measurementsare used to determine the effect of AIN thickness on the strain in the subsequent GaN layers. The 437arcsec linewidth on the (002) x-ray rocking curve also attest the high crystalline quality of GaN on Si (111).

• Journal of the Korean Institute of Oriental Medical Informatics
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• v.16 no.2
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• pp.9-49
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• 2010

Byun Jeung Ok Ham, written by Jin Sa Tak is composed of four books. This book is estimated of being written after A.D 1688 and composed of internal medicine, obstetrics and gynecology, ophthalmology, dental surgery and so on, total 36 parts of clinical medicine. This is the last book of that four studying about definition on true and false of 15 diseases. 15 subjects follow, tumo, heat, faint, hematemesis and nosebleeding, insanity, great vomiting, great diarrhea, great thirst, scrotal hernea, uterus attacked by heat, dysentery, congestion, great swelling, malaria, attack by cold. This treatise is the last book of four which deals with jin ga translating into korean and studying about medical theories. In every parts, author's unique clinical theory appears affluently and in that periods his study developed a lot in those days' medical methods. The first book deals with eum yang. second book is weakness and strongness, third upper and low, fourth truth and untruth. First book, Jin Sa Tak says studying on eum yang is oriental medical basic theory and on incurable diseases or chronic symptoms, doctor must go back to that eumyang demonstration after can cure patients. Second parts are on weakness and strongness demonstration, that weakness is weakness of patients' energy and strongness is prosperous condition of diseases' attack. Third parts are on upper and low, that upper is upper parts of human body of painful parts and low is human low parts of pain, that is parts of under waist. And this treaties fourth parts are truth and untruth, true symptoms and untrue symptoms, that is the real reaction of human condition and the other way. Every prescriptions are author's creations. This book provides new viewpoints which surpasses original ancient medical theories. Author suggests new opinions about chronic and incurable diseases.

• Korean Journal of Materials Research
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• v.6 no.12
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• pp.1270-1278
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• 1996

고진공하에서 벽개된 GaAs를 대기중 노출시킨후, 결합상태 및 조성의 변화를 정량적으로 연구하여 Ga의 우선적 산화경향 및 결합의 붕괴에 기인한 원소상태 Ga 및 As의 생성을 관찰하였다. 대기중 노출시, 초기 Ga/As 비(=0.01)는 Ga의 우선적 산화에 의해 증가하였으며 원소상태 As의 증가와 더불어 일정값(=1.25)으로 유지되었다. 습식세정된 GaAs와 유황처리된 (S-passivated)GaAs를 각각 대기중에 노출시켜, 각각의 표면상태 변화를 비교, 관찰하였다. 유황처리된 GaAs는 습식세정처리만한 GaAs에 비해 산화막 성장이 크게 억제되었고, 이는 (NH4)2Sx 용액 처리로 형성된 Ga-S 및 As-S 겹합의 표면보호 효과에 기인한 것이다. 특히 대기중 노출에 따른 유황처리된 GaAs 표면조성 및 결합상태 변화의 정량적 관찰을 통하여, 유황보호막(S-passivation layer) 및 GaAs 표면과 대기중 산소와의 반응 기구를 규명할 수 있었다. 대기중 노출에 따라, 표면의 Ga-S 및 As-S 결합은 대기중 산소와 반응하여 점차 붕괴, 감소하는 경향을 나타냈으며, 이와 동시에 unpassivated 상태의 GaAs가 산소와 반응하여 Ga-O 결합을 형성함을 관찰할 수 있었다. 본 연구에서는 X-선 광전자 분광기를 사용하여 GaAs 표면 조성 및 결합상태의 변화를 관찰하였다.

• Proceedings of the KSME Conference
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• 2001.06a
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• pp.939-944
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• 2001

Genetic algorithm is modelled on natural evolution and simulated annealing is based on the simulation of thermal annealing. Both genetic algorithm and simulated annealing are stochastic method. So they can find global optimum values. For compare efficiency of SA and GA's, some function value was maximized. In the result, that was a little better than GA's.

• The Korean Journal of Rheology
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• v.10 no.2
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• pp.113-120
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• 1998

사출성형공정은 대표적인 고분자 가공공정으로 그 복잡한 특성으로 인하여 공정변 수를 최적화하는 것을 주로 경험에 의존해 왔다. 본 연구에서는 사출성형공정의 보압과정 중에 보압의 이력을 최적화하여 제품각 부분의 부피수축율차이를 최소가 되게 하는 최적화 시스템을 개발하였다. 최적화 알고리즘으로는 GA방법을 사용하였으며 본 연구에서 제안한 최적화 시스템으로 보압과정의 최적화를 수행한 결과 부피수축율의 차이가 현저히 감소하는 것을 알수 있었다. 특히 SA방법을 사용하는 경우 초기의 최적화 속도가 GA를 사용하는 경 우에 비해서 뛰어남을 알수 있었다. 또한 충전과정과 보압과정을 함께 최적화하여 보압과정 만 최적화한 결과와 비교하여 보았다.

• Journal of Korean Society of Steel Construction
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• v.27 no.2
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• pp.131-142
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• 2015

In this paper, we present an optimization of truss structures subjected to stress, buckling, and natural frequency constraints. The main objective of the present study is to propose an efficient HA-SA algorithm for solving the truss optimization subject to multiple constraints. The procedure of hybrid HA-SA is a search method which a design values in harmony memory of harmony search are used as an initial value designs in simulated annealing search method. The efficient optimization of HA-SA is illustrated through several optimization examples. The examples of truss structures are used 10-Bar truss, 52-Bar truss (Dome), and 72-Bar truss for natural frequency constraints, and used 18-Bar truss and 47-Bar (Tower) truss for stress and buckling constraints. The optimum results are compared to those of different techniques. The numerical results are demonstrated the advantages of the HA-SA algorithm in truss optimization with multiple constraints.

• Proceedings of the IEEK Conference
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• 2004.06b
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• pp.501-504
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• 2004

High quality GaN layer was obtained on 0001 sapphire substrate using ammonia($NH_3$) as a nitrogen source by gas source molecular beam epitaxy. As a result, RHEED is used to investigate the relaxation processes which take place during the growth of GaN. In-situ RHEED(reflection high electron energy diffraction) appeared streaky-like pattern. The full Width at half maximum of the x-ray diffraction(FWHM) rocking curve measured from plane of GaN has exhibited as narrow as 8arcmin and surface roughness was 7.83nm. Photoluminescence measurement of GaN was investigated at room temperature, where the intensity of the band edge emission is much stronger than that of deep level emission. The GaN epitaxy layer according to various growth condition was investigated.

• Korean Journal of Materials Research
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• v.7 no.6
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• pp.484-491
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• 1997

본 연구에서는 비파괴적 분석 기법인 각분해 X-선 광전자 분광기(Angle-Resolved X-ray Photoelectron Spectros-copy)를 이용하여 GaAs 표면 자연 산화막의 깊이에 따른 화학적 결합 상태 및 조성 분석을 수행하였다. GaAs의 벽개면 및 Ar이온으로 식각된 면을 기준시료로 하여 각 원자의 광전자 강도(intensity)를 보정해주는 인자인 ASF(atomic sensitivity factor)의 최적값을 구하였다. 이륙각에 따라 발생되어지는 각 원소의 피이크 분해와 정확한 ASF의 보정을 통한 각 원소의 실험적인 결과를 이용하여 깊이 방향으로의 조성 분포 모델을 세웠으며, 이론적인 강도와의 상호비교로부터 표면 오염층의 구조는 표면으로부터 탄소층, Ga-oxide와 As-oxide로 이루어진 oxides층, As-As결합의 elemental As층 및 GaAs기판의 순으로 존재함을 알 수 있었다. 또한 GaAs 표면에 존재하는 오염층은 35.8$\pm$3.3 $\AA$이었다. 또한 위 결과로부터 분석깊이 영역에서 원자수의 비로써 정의되는 의미로서의 실질조성을 구하였는데 단지 특정 이륙각에 따라 일반적인 ASF로 보정된 표면조성 결과는 표면 상태를 명확히 표현해주지 못함을 확인할 수 있었다.