• Journal of Veterinary Clinics
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• v.19 no.3
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• pp.316-321
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• 2002

The purpose of this study was to examine the effect of Ga-As(Gallium-Arsenide, wave length; 904 nm) infrared laser irradiation on healing of the experimentally crush injured rat sciatic nerves. The bilateral sciatic nerves of 43 adult male Sprague-Dawley rats were compressed surgically with a straight hemostat (1 mm width). The right legs of all the rats were irradiated using a 27 mW Ga-As infrared laser (laser irradiated group). The radiation procedure was administered for 3 minutes every day for 1, 3, 5, and 7 weeks in each group. Left legs were not irradiated and served as the control group. The numbers of total myelinated axon and degenerated myelin in the sciatic nerves of bilateral legs were measured and analyzed with mage analysis system in order to make a morphological analysis of the effect of the Ga-As infrared laser on injured nerves. Total number of myelinated axons was increased with time interval, especially in the 1, 3. and 5 week of irradiated group. Conversely, the number of degenerated myelin was decreased with time interval, especially in the irradiated group. The effects in the irradiated group were more pronounced than those of the control group. In conclusion, the Ga-As infrared laser irradiation is a useful adjuvant therapy to the regeneration of the peripheral nerve injury.

• Journal of the Korean Institute of Navigation
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• v.16 no.2
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• pp.21-27
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• 1992

Shortening the lasing wavelength(particularly below infrared ; the visible region) of laser diodes is very attractive because it can provide a wide range of applications in the fields of optical information, measurement, sensor, the development of medical instrument, and optical communication through plastic fibers. According to the recent researches on the field, InGaAsP/GaAs was suggested as a material for red-light laser. In this study, in order to grow InGaAsP/GaAs epitaxial layer on InGaAsP/GaAs by LPE, we used GaP and InP two phase solution technique for 670nm and 780 nm region, respectively. Through the X-ray diffraction measurement for the epitaxial layer grown from the experiments, we found that the lattice mismatch of $In_{0.46}Ga_{0.54}As_{0.07}P_{0.93}$/GaAs and $In_{0.19}Ga_{0.81}As_{0.62}P_{0.38}$/GaAs was about +0.3% and +0.1%, respectively.

• Journal of Oral Medicine and Pain
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• v.18 no.2
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• pp.97-106
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• 1993

This study was performed to investigate the effects of infrared and visible light laser irradiation on cell viability of human gingival fibroblast. For the present study, the author used cultured fibroblast originated from sound gingiva which were fifth of sixth passage. Laser machine utilized here were stomalaser which irradiate infrared (GaAs diode) and red (HeNe) laser in turn with pulse wave pattern or continuous wave pattern, and the machine had several frequency mode presented by regeneration, relaxation and analgesic modalities. Cultured fibroblast samples were divided by this modalities of cell counts and laser exposure time which were 7-seconds of 150 seconds, respectively. 1 day after laser irradiation, each cell-well was treated with MTT and measured optical density with ELISA. The obtained results were as follows : 1. There was a tendency of increasing optical density in proportion to irradiation time in groups of $1\times10^4$ cell per well but in groups of $5\times10^3$ cell per well, reverse phenomena were observed. 2. The difference of optical density according to frequency modalities were not showed significantly except several cases in groups of $5\times10^3$ cell per well. 3. In general, cell viability of cultured human gingival fibroblast wer not showed consistent feature by low level laser irradiation.

• The Journal of Pediatrics of Korean Medicine
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• v.29 no.4
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• pp.29-38
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• 2015

Objectives We aimed to identify the effectiveness of photobiomodulation using low level laser therapy (LLLT), light emitting diode (LED) and others on the growth of the length of the growth plate by reviewing literatures. Methods We searched literatures using PubMed, Science Direct, CINAHL, Korea Traditional Knowledge Portal (KTKP), Oriental Medicine Advanced Searching Integrated System (OASIS), China Knowledge Resource Integrated Database (CNKI), Japan Science and Technology Information Aggregator, Electronic (J STAGE), and Japan National Institute of Informatics Scholarly and Academic Information Navigator (CiNii) using the keywords "Growth plate" "Epiphyseal growth" "Epiphyseal plate" and "Laser", "light emitting diode (LED)", "near-infrared light", and "photobiomodulation". Search range included only original article which provided English abstract were selected. The search strategy contained no language limitation. Results A total 556 studies were found. Then, 551 were excluded by scanning titles and abstracts and finally 5 articles were selected. Five articles were RCTs using rodents. Two of the 5 articles used InGaAlP Laser (630-685 nm), and the other 3 articles used GaAlAs Laser (780, 820, and 870 nm) to investigated the effects of LLLT on the growth of the length of the epiphyseal cartilage and the number of chondrocytes and thickness of each zone of the epiphyseal cartilage. Two articles concluded that LLLT had a beneficial effect on the longitudinal growth of the growth plate. In growth of the epiphyseal plate, there were no significant differences in others. Conclusions It is might that LLLT influenced on the growth of epiphyseal plate by positive affect. However, further rigorous RCTs are warranted.

• Journal of Life Science
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• v.16 no.1
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• pp.114-119
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• 2006

The purpose of this study was to determine effects of the Ga-As (Gallium-Arsenide) Dens-Bio laser on mechanically injured sciatic nerves of rats. The improvement of the injured rat sciatic nerve was evaluated by measuring of nerve conduction velocity and amplitude of compound muscle action potential. The sciatic nerves of forty male Sprague-Dawley rats were compressed with hemostatic forceps for 30 seconds. The experimental group was divided into 4 subgroups according to the duration of treatment. Lower power infrared laser irradiation was done transcutaneously to the injured sciatic nerve area, 3 minutes daily to each of four treatment groups for 1, 3, 5, and 7 weeks, respectively. Compound muscle action potential and nerve conduction velocity of sciatic nerve were obtained before nerve injury and at 1, 3, 5, and 7 weeks after injury. There were significant difference of the nerve conduction velocity and amplitudes of compound muscle action potential between the treatment group and non-treatment group at 1, 3, and 5 weeks after laser treatment. However, there were no differences found between the electrophysiologic parameters that were measured after 7 weeks in two groups. There was significant correlation between the increment of compound muscle action potential and nerve conduction velocity after time course according to laser treatment. In conclusion, the low power laser treatment had improved the sciatic nerve function, and therefore these results may provide the basic data to clarify the neurological recovery and treatment after incomplete peripheral nerve injury.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.187-187
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• 2013

양자점(Quuantum dot, QD)은 0차원 특성을 가지는 구조로 양자 구속 효과로 인하여 bulk와 는 다른 구조적, 광학적, 전기적 특성을 가지고 있다. InAs QD는 size와 barrier의 bandgap 조절을 이용하여 쉽게 bandgap을 바꿀 수 있는 장점이 있어 solar cell, semiconductor laser diode, infrared photodetector 등으로 많은 연구가 이루어지고 있다. 일반적으로 Stranski-Krastanov (SK) mode로 성장한 InAs QD는 보통 GaAs epilayer와의 lattice mismatch (7%)를 이용하여 성장을 하고 이로 인하여 strain을 가지고 있고 QD의 density와 stack이 높을수록 strain이 커진다. 하지만 sub-monolayer (SML) QD 같은 경우 wetting layer가 생기는 지점인 1.7 ML이하에서 성장되는 성장 방식으로 SK-QD보다는 작은 strain을 가지게 된다. 또 QD의 size가 작아 SK-QD보다 큰 bandgap을 가지고 있다. 본 연구에서는 분자선 에피택시(molecular beam epitaxy, MBE)를 이용하여 semi-insulating GaAs substrate 위에 InAs QD를 0.5/1/1.5/1.7/2/2.5 monolayer로 성장을 하였다. GaAs과 InAs의 성장온도와 성장속도는 각각 $590^{\circ}C$, 0.8 ML/s와 $480^{\circ}C$, 0.2 ML/s로 성장을 하였으며 적층사이의 interruption 시간은 10초로 고정하였고 10주기를 성장하였다. Photoluminescence (PL)측정 결과 SML-QD는 size에 따라서 energy가 1.328에서 1.314 eV로 약간 red shift를 하였고 SK-QD의 경우 1.2 eV의 energy정도로 0.1 eV이상 red shift 하였다. 이는 QD size에 의하여 energy shift가 있다고 사료된다. 또 wetting layer의 경우 1.41 eV의 energy를 가지는 것으로 확인 하였다. SML-QD는 SK-QD 보다 반치폭(full width at half maximum, FWHM)이 작은 것은 확인을 하였고 strain field의 감소로 해석된다. 하지만 SML-QD의 경우 SK-QD보다 상대적으로 작은 PL intensity를 가지고 있었다. 이를 개선하기 위해서는 보다 높은 QD density를 요구하게 되는데 growth temperature, V/III ratio, growth rate 등을 변화주어서 연구할 계획이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.293-294
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• 2011

It is known that semiconductor quantum-dot (QD) heterostructures have superior zero-dimensional quantum confinement, and they have been successfully applied to semiconductor laser diodes (QDLDs) for optical communication and infrared photodetectors (QDIPs) for thermal images [1]. The self-assembled QDs are normally formed at Stranski-Krastanov (S-K) growth mode utilizing the accumulated strain due to lattice-mismatch existing at heterointerfaces between QDs and cap layers. In order to increase the areal density and the number of stacks of QDs, recently, sub-monolayer (SML)-thick QDs (SQDs) with reduced strain were tried by equivalent thicknesses thinner than a wetting layer (WL) existing in conventional QDs (CQDs) by S-K mode. Despite that it is very different from CQDs with a well-defined WL, the SQD structure has been successfully applied to QDIP[2]. In this study, optical characteristics are investigated by using photoluminescence (PL) spectra taken from self-assembled InAs/GaAs QDs whose coverage are changing from submonolayer to a few monolayers. The QD structures were grown by using molecular beam epitaxy (MBE) on semi-insulating GaAs (100) substrates, and formed at a substrate temperature of 480$^{\circ}C$ followed by covering GaAs cap layer at 590$^{\circ}C$. We prepared six 10-period-stacked QD samples with different InAs coverages and thicknesses of GaAs spacer layers. In the QD coverage below WL thickness (~1.7 ML), the majority of SQDs with no WL coexisted with a small amount of CQDs with a WL, and multi-peak spectra changed to a single peak profile. A transition from SQDs to CQDs was found before and after a WL formation, and the sublevel of SQDs peaking at (1.32${\pm}$0.1) eV was much closer to the GaAs bandedge than that of CQDs (~1.2 eV). These revealed that QDs with no WL could be formed by near-ML coverage in InAs/GaAs system, and single-mode SQDs could be achieved by 1.5 ML just below WL that a strain field was entirely uniform.