• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• Journal of the Korean Ceramic Society
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• v.45 no.9
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• pp.524-530
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• 2008

Anti-Reflective (AR) thin film coatings of $SiO_2$ (n= 1.48) and $TiO_2$ (n=2.17) were deposited by ion-beam assisted deposition (IBAD) with End-Hall ion source and conventional electron beam (e-beam) evaporation to investigate the effect of deposition method on the refractive indicies (n) of the fIlms. Green-light generation using a GaAs laser diode was achieved via excitation of the second harmonic. The latter resulted from the transmission of the fundamental guided-mode wave of 1064 nm through periodically poled $LiNbO_3$. Large differences in the refractive indicies of each of the layers in the multilayer coating may improve AR performance. IBAD of $SiO_2$ reduced its refractive index from 1.45 to 1.34 at 1064 nm. Conversely, e-beam evaporation of $TiO_2$ increased its refractive index from 1.80 to 2.11. In addition, no fluctuations in absorption at the wavelength of 1064 nm were found. The results suggest that films prepared by different deposition methods can increase the effectiveness of multilayer AR coatings.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.445-454
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• 2001

The stochiometric mix of evaporating materials for the CuInSe$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CuInSe$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 62$0^{\circ}C$ and 41$0^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of CuInSe$_2$ single crystal thin films measured from Hall effect fby van der Pauw method are 9.62x10$^{16}$ cm$^{-3}$ , 296$\textrm{cm}^2$/V.s at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the CuInSe$_2$ single crystal thin film we have found that he values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 6.1 meV and 175.2 meV at 10K, respectively. From the photoluminescence measurement on CuInSe$_2$ single crystal thin film we observed free excition (Ex) existing only high quality crystal and neutral bound exiciton (D$^{\circ}$,X) having very strong peak intensity. Then, the full-width-at-half-maximum(FWHM) and binding energy of neutral donor bound excition were 7meV and 5.9meV, respectivity. by Haynes rule, an activation energy of impurity was 50 meV.

• The Journal of Korean Academic Society of Nursing Education
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• v.3 no.2
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• pp.207-213
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• 1997

Basic science teaching and clinical education should be integrated whenever appropriate, and the development of skills, values, and attitudes which are emphasized to the same extent as the acquisition of knowledge in nursing. Problem-based learning provides a students-centered learning environment and encourages an inquisitive style of learning. The purpose of this paper is to review and comment the role of tutors and students on problem-based learning. The use of problem-based learning places a high demand on faculty members' time and support. The role of tutors in Problem-based learning focuses primarily on issues of developing and teaching the curriculum and on organizational implementation and institutionalization. Tutors are an integral part of course planning. Tutors serve as a constant source of feedback on student needs and concerns to the course director and constitute an informal steering committee while the course is in progress. Tutors write cases, develop student evaluation methods, recommend resources, suggest modifications in lectures and laboratories. Students have a limited amount of time available to study what is traditionally defined as the core content of nursing. But, the role of students in Problem-based learning would be active, independent learners and problem-solvers rather than passive recipients of information. Students using a deep level approach attempt to integrate what they learn with what they already know, to understand the meaning underlying the material to be learned, and to look for explanations rather than facts. Students are encouraged, with appropriate guidance, to define their own learning goals, to select appropriate experiences to achieve these goals, and to be responsible for assessing their own learning progress. Problem-based learning is more flexible and meaningful, by encouraging student interaction, and by having a better emotional climate than the conventional learning.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.6
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• pp.1009-1017
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• 2001

The acousto-optical spectrometer is designed by using 1 GHz bandwidth acousto-optic deflector for radio signal analysis. This system is a high resolution wide band spectrometer which uses I GHz bandwidth and a total of 2,048 channel charge coupled device. When we measured the spectrums of signals deflected by acousto-optical spectrometer, we confirmed the stability of the total system by repetitive observations of the same frequency, and each part of the system worked well. We installed this system onto 60 cm radio telescope, and observed 12CO(J= 1 ∼0) emission lines around CRL 2688, IRC 10216 and NGC 5005 Galaxy center. We could observe effectively very narrow band width radio spectrum as well as wide band radio spectrum. We also confirmed high sensitivity and resolution in observation of 12CO(J-10) omission line of NGC 5005 Galaxy center which is a weak signal.

• Journal of Korean Society on Water Environment
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• v.29 no.4
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• pp.514-522
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• 2013

The major 24 tributaries in Nam-River mid-watershed were monitored for discharge and water quality in order to understand the characteristics of the watershed and to select the tributary catchment for improving water quality. According to the analytical results of discharge and water quality monitoring data of 24 tributaries, the mean value of discharge below $0.1m^3/s$ was 62.5% among the monitored tributaries and it mostly exceeded the water quality standards of Nam-river mid-watershed ($BOD_5$ = 3 mg/L, T-P = 0.1 mg/L over). According to the stream grouping method and the water quality delivery load density ($kg/day/km^2$) based on the results of tributary discharge and water quality monitoring, the tributary watersheds for improving the water quality were selected. In the Nam-River mid-watershed, tributaries in the GaJwaCheon, HaChonCheon catchment (Group D, $BOD_5$ = 3 mg/L over) and in the UirYeongCheon, SeokGyoCheon catchment (Group A, T-P = 0.1 mg/L over), which have a small flow (and/or large flow) and a high concentrations of water pollutants. The various water quality improving scheme for tributaries, in accordance with the reduction of potential point source pollution by living sewage and livestock wastewater, should be established and implemented.

• Transactions of Materials Processing
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• v.20 no.1
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• pp.11-16
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• 2011

Recently, according to the rapid development of display, many display applications, such as, cellular phone, navigation, monitor and LCD TV have been changed from CRT type to LCD type. BLU(Back Light Unit) is one of main parts in LCD unit and generally, it consists of a light source, a reflective sheet, a LGP(Light Guide Plate), a diffuser sheet, and two prism sheets. The most important component of BLU is a light guide plate, which diffuses the input light to the TFT-LCD module uniformly. The LGP is usually made by injection molding process, and it has numerous optical micro patterns on the surface. In the present study the micro-patterned stamper which has cylindrical shape was fabricated by using the UV-LiGA process. And the replication characteristics have been compared among three different kinds of injection molding process; general injection molding, injection/compression molding and RHCM(Rapid Heating and Cooling Molding). Average replication ratios of CIM and ICM were 19.1% and 64.6%, respectively. On the other hand, the average replication ratio of RHCM process showed the higher value of 98.4% among these. It show that maintaining the mold surface above $T_g$ could increase the replication ratio of micro patterns substantially.

• Korean Journal of Crystallography
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• v.11 no.4
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• pp.212-223
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• 2000

A stochiometric mix of CuInTe₂ polycrystal was prepared in a honizonatal furnace. To obtain the single crystal thin films, CuInTe₂ mixed crystal was deposited on throughly etched GaAs(100) by the HWE system. The source and substrate temperatures were 610℃ and 450℃ respectively, and the thickness of the deposited single crystal thin film was 2.4㎛. CuInTe₂ single crystal thin film was proved to be the optimal growth condition when the excition emission spectrum was the strongest at 1085.3 nm(1.1424 eV) of photoluminescence spectrum at 10 K, and also FWHM of Double Crystal X-ray Rocking Curve (DCRC) was the smallest, 129 arcsec. The Hall effect on this sample was measured by the method of Van der Pauw, and the carrier density and mobility dependent on temperature were 9.57x10/sup 22/ electron/㎥, 1.31x10/sup -2/㎡/V·s at 293 K, respectively. The ΔCr(Crystal field splitting) and the ΔSo (spin orbit coupling splitting( measured at f10K from the photocurrent peaks in the short wavelength of the CuInTe₂ single crystal thin film were about 0.1200 eV, 0.2833 eV respectively. From the PL spectra of CuInTe₂ single crystal thin film at 10 K, the free exciton (E/sub x/) was determined to be 1064.5 nm(1.1647 eV) and the donor-bound exciton(D/sup 0/, X) and acceptor-bound exciton (A/sup 0/, X) were determined to be 1085.3 nm(1.1424 eV) and 1096.8 nm(1.1304 eV0 respectively. And also, the donor-acciptor pair (DAP)P/sub 0/, DAP-replica P₁, DAP-replica P₂ and self-activated (SA) were determined to be 1131 nm (1.0962 eV), 1164 nm(1.0651 eV), 1191.1 nm(1.0340 eV) and 1618.1 nm (0.7662 eV), respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.266-272
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• 2002

The stochiometric mixture of evaporating materials for the ZnIn$_2$S$_4$ single crystal thin film was prepared from horizontal furnace. To obtain the ZnIn$_2$S$_4$ single crystal thin film, ZnIn$_2$S$_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610 $^{\circ}C$ and 450 $^{\circ}C$, respectively and the growth rate of the ZnIn$_2$S$_4$ single crystal thin film was about 0.5 $\mu\textrm{m}$/hr. The crystalline structure of ZnIn$_2$S$_4$ single crystal thin film was investigated by photo1uminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of ZnIn$_2$S$_4$ single crystal thin film measured from Hall effect by van der Pauw method are 8.51${\times}$10$\^$17/ cm$\^$-3/, 291 $\textrm{cm}^2$/V$.$s at 293 $^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the ZnIn$_2$S$_4$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 0.0148 eV and 0.1678 eV at 10 $^{\circ}$K, respectively. From the photoluminescence measurement of ZnIn$_2$S$_4$ single crystal thin film, we observed free excition (E$\_$X/) typically observed only in high quality crystal and neutral donor bound exciton (D$^{\circ}$,X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively. The activation energy of impurity measured by Haynes rule was 130 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.226-229
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.