• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.34-35
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• 2006

Transparent ZnO thin film transistor (TFT) is fabricated on the glass substrates. The device consists of a high mobility intrinsic ZnO as a semiconductor active channel, Ga doped ZnO (GZO) as an electrode, $HfO_2$ as a gate insulator. GZO and $HfO_2$ layers are prepared by using a pulsed laser deposition and intrinsic ZnO layers are fabricated by using an rf-magnetron sputtering, respectively. The transparent TFT is highly transparent (> 87 %) and exhibits n-channel, enhancement mode behavior with a field-effect mobility as large as $11.7\;cm^2/Vs$ and a drain current on-to-off ratio of about $10^5$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.9
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• pp.739-743
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• 2011

Ga doped ZnO (GZO)/Cu bi-layer films were deposited with RF and DC magnetron sputtering on glass substrate and then the effect of post deposition annealing temperature on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes in gas pressure of $1{\times}10^{-3}$ Torr and the annealing temperatures were 150 and $300^{\circ}C$. With increasing annealing temperature, GZO/Cu films showed an increment in the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The GZO/Cu films annealed at $300^{\circ}C$ showed the highest optical transmittance of 70% and also showed the lowest electrical resistance of $85\;{\Omega}/{\Box}$ in this study.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.169-170
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• 2007

In this paper we report upon an investigation into the effect of sputter pressure and RF power on the electrical properties of Gallium doped zinc oxide (GZO) film. GZO films were deposited on glass substrate without substrate temperature by RF magnetron sputtering from a ZnO target mixed with 5 wt% $Ga_2O_3$. Argon gas pressure and RF power were in the range of 1~11 mTorr, and 50~100 W, respectively. However, the resistivity of the film was strongly influenced by the sputter pressure and RF power. We were able to achieve as low as $1.5{\times}10^{-3}\;{\Omega}cm$, without substrate temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.204.1-204.1
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• 2013

Fluorine, the radius of which is close to that of oxygen, could be an appropriate anion doping candidate. A lower lattice distortion could be expected for F doping, compared with Al, Ga, and In doping. F-doped ZnO (FZO) and undoped ZnO nanorods were grown onto glass substrate by the hydrothemal method. The doping level in the solution, designated by F/Zn atomic ratio of was varied from 0.0 to 10.0 in 2.0 steps. To investigate the effects of the structure and optical properties of FZO nanorods were investigated using X-ray diffraction, UV-visible spectroscopy and photoluminescence (PL). For the PL spectra, the maximum peak position of NBE moves to higher energy, from 0 to 4 at.%. As the doping concentration increases, the maximum peak position of NBE gradually moves to lover energy, from 4 to 10 at.%.

• Journal of the Korean institute of surface engineering
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• v.47 no.6
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• pp.341-346
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• 2014

Ga-doped ZnO (GZO) single layer and $SiO_2/GZO$ bi-layered films were deposited on Polycarbonate(PC) substrate by radio frequency magnetron sputtering. Influence of the structural, electrical, and optical properties of the films was considered. We have considered the influence of electron irradiation energy of 450 and 900 eV on the stuctural, electrical and optical properties of $SiO_2/GZO$ thin films. The optical transmittance in a visible wave length region increased with the electron irradiation energy. The electrical resistivity of the films were dependent on the electron's irradiation energy. The $SiO_2/GZO$ films irradiated at 900 eV were showen the lowest resistivity of $7.8{\times}10^{-3}{\Omega}cm$. The film which was irradiated by electron at 900 eV shows 84.3% optical transmittance and also shows lower than contact angle of $58^{\circ}$ in this study.

• Journal of Ceramic Processing Research
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• v.13 no.spc1
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• pp.140-144
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• 2012

Ga-doped ZnO (GZO) was a limit of application on the photovoltaic devices such as CIGS, CdTe and DSSC requiring high process temperature, because it's electrical resistivity is unstable above 300 ℃ at atmosphere. Therefore, ZTO (zinc tin oxide) was introduced in order to improve permeability and thermal stability of GZO film. The resistivity of GZO (300 nm) single layer increased remarkably from 1.8 × 10-3Ωcm to 5.5 × 10-1Ωcm, when GZO was post-annealed at 400 ℃ in air atmosphere. In the case of the ZTO (150 nm)/GZO (150 nm) double layer, resistivity showed relatively small change from 3.1 × 10-3Ωcm (RT) to 1.2 × 10-2Ωcm (400 ℃), which showed good agreement with change of carrier density. This result means that ZTO upper layer act as a barrier for oxygen at high temperature. Also ZTO (150 nm)/GZO (150 nm) double layer showed lower WVTR compared to GZO (300 nm) single layer. Because ZTO has lower WVTR compared to GZO, ZTO thin film acts as a barrier by preventing oxygen and water molecules to penetrate on top of GZO thin film.

• Korean Journal of Materials Research
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• v.20 no.4
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• pp.175-180
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• 2010

Transparent conducting oxide (TCO) films are widely used for optoelectronic applications. Among TCO materials, zinc oxide (ZnO) has been studied extensively for its high optical transmission and electrical conduction. In this study, the effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films (GZO) on polyethylene naphthalate (PEN) substrate were studied. The $O_2$ plasma pretreatment process was used instead of conventional oxide buffer layers. The $O_2$ plasma treatment process has several merits compared with the oxide buffer layer treatment, especially on a mass production scale. In this process, an additional sputtering system for oxide composition is not needed and the plasma treatment process is easily adopted as an in-line process. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PEN substrate and the GZO film, the $O_2$ plasma pre-treatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the contact angle decreased and the RMS surface roughness increased significantly. It is believed that the surface energy and adhesive force of the polymer surfaces increased with the $O_2$ plasma treatment and that the crystallinity and grain size of the GZO films increased. When the RF power was 100W and the treatment time was 120 sec in the $O_2$ plasma pretreatment process, the resistivity of the GZO films on the PEN substrate was $1.05\;{\times}\;10^{-3}{\Omega}-cm$, which is an appropriate range for most optoelectronic applications.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.334-334
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• 2013

In the past decade, the infrared detectors based on intersubband transition in quantum dots (QDs) have attracted much attention due to lower dark currents and increased lifetimes, which are in turn due a three-dimensional confinement and a reduction of scattering, respectively. In parallel, focal plane array development for infrared imaging has proceeded from the first to third generations (linear arrays, 2D arrays for staring systems, and large format with enhanced capabilities, respectively). For a step further towards the next generation of FPAs, it is envisioned that a two-dimensional metal hole array (2D-MHA) structures will improve the FPA structure by enhancing the coupling to photodetectors via local field engineering, and will enable wavelength filtering. In regard to the improved performance at certain wavelengths, it is worth pointing out the structural difference between previous 2D-MHA integrated front-illuminated single pixel devices and back-illuminated devices. Apart from the pixel linear dimension, it is a distinct difference that there is a metal cladding (composed of a number of metals for ohmic contact and the read-out integrated circuit hybridization) in the FPA between the heavily doped gallium arsenide used as the contact layer and the ROIC; on the contrary, the front-illuminated single pixel device consists of two heavily doped contact layers separated by the QD-absorber on a semi-infinite GaAs substrate. This paper is focused on analyzing the impact of a two dimensional metal hole array structure integrated to the back-illuminated quantum dots-in-a-well (DWELL) infrared photodetectors. The metal hole array consisting of subwavelength-circular holes penetrating gold layer (2DAu-CHA) provides the enhanced responsivity of DWELL infrared photodetector at certain wavelengths. The performance of 2D-Au-CHA is investigated by calculating the absorption of active layer in the DWELL structure using a finite integration technique. Simulation results show the enhanced electric fields (thereby increasing the absorption in the active layer) resulting from a surface plasmon, a guided mode, and Fabry-Perot resonances. Simulation method accomplished in this paper provides a generalized approach to optimize the design of any type of couplers integrated to infrared photodetectors.

• 한국신재생에너지학회:학술대회논문집
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• 2006.11a
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• pp.463-466
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• 2006

직접 알콜 연료전지는 액체인 알콜을 직접 연료전지에 공급하여 연소시킴으로써 높은 효율을 갖는 휴대용전원으로 주목받는 장치이다. 직접 알콜 연료전지에 담지체로 사용되는 탄소 소재는 넓은 표면적과 우수한 전기전도도를 가지고 있다는 장점 있으나 금속 촉매와의 상호작용이 약하여 촉매 활성에 영향을 주지 못한다. 산화물을 담지체로 사용할 경우 이러한 금속-담지체 간의 상호작용으로 인한 촉매활성 증가 및 입자성장 억제의 효과를 기대할 수 있다. 본 연구에서는, 안티몬 도핑된 주석산화물 (Sb-doped SnO2 : ATO nanoparticle)을 직접 메탄올 연료전지용 담지체어 적용하였으며 합성 과정은 다음과 같다. SnC14 5H2O SbC13, NaOH, HCl 수용액 혼합물을 삼구 플라스크에 넣고 $100^{\circ}C$ 온도에서 환류(reflux) 시킨 후 세척 및 건조하여 Air 분위기에서 열처리하였다. 합성된 산화물 수용액에 폴리올 방법으로 합성된 백금 콜로이드를 담지하였으며, 세척과 건조를 통하여 산화물에 담지된 백금 촉매를 촉매를 합성하였다. 촉매의 구조분석을 위해 XRD, TEM을 사용하였으며, 전극촉매로서의 활성을 평가하기 위해 cyclic voltammetry을 평가하였다. 본 연구에서는 백금의 담지량에 따른 Costripping voltammetry특성과 메탄올 및 에탄올 산화 반응 특성에 대하여, 탄소를 담지체로 사용한 Pt/C 촉매와 비교 평가하였다. 알콜 산화반응 평가결과, 주석산화물에 담지한 촉매가 탄소를 담지체로 사용한 촉매보다 우수한 활성을 나타내었으며 활성증가는 메탄올에 비해 에탄올 산화 반응의 경우 크게 증가하였다. 막과 비교해 보았다. $ZrO_2$ 입자는 전도성이며 동시에 친수성을 나타내기 때문에 상용 막에 비하여 함수율 및 수소이온 전도도가 우수하게 나타났다. 복합막의 이러한 물성은 $100^{\circ}C$이상의 고온에서 전해질 막 내의 물 관리를 용이하게 한다. 단위 전지 운전 온도 $130^{\circ}C$, 상대습도 37%의 운전 조건에서도 상당히 우수한 전지 성능을 보임에 따라 고온/저가습 조건에서 상용 Nafion 112 막보다 우수한 막 특성을 나타냄을 확인하였다.소/배후방사능비는 각각 $2.18{\pm}0.03,\;2.56{\pm}0.11,\;3.08{\pm}0.18,\;3.77{\pm}0.17,\;4.70{\pm}0.45$ 그리고 $5.59{\pm}0.40$이었고, $^{67}Ga$-citrate의 경우 2시간, 24시간, 48시간에 $3.06{\pm}0.84,\;4.12{\pm}0.54\;4.55{\pm}0.74 $이었다. 결론 : Transferrin에 $^{99m}Tc$을 이용한 방사성표지가 성공적으로 이루어졌고, $^{99m}Tc$-transferrin의 표지효율은 8시간까지 95% 이상의 안정된 방사성표지효율을 보였다. $^{99m}Tc$-transferrin을 이용한 감염영상을 성공적으로 얻을 수 있었으며, $^{67}Ga$-citrate 영상과 비교하여 더 빠른 시간 안에 우수한 영상을 얻을 수 있었다. 그러므로 $^{99m}Tc$<