• Journal of Magnetics
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• v.16 no.4
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• pp.332-336
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• 2011

We studied the effect on the electronic and magnetic properties of the N defect in clean and Cu-doped wurtzite III-nitrides by using the first-principles calculations. When it is doped two Cu atoms in the nearest neighboring sites, the system of AlN, GaN, or InN with the N vacancy is energetically more favorable than that without the N vacancy site. When the Cu concentration increases, the total magnetic moment of a supercell becomes small. The ferromagnetism of Cu atom is very low due to the weak 3d-3d coupling. It is noticeable that the spin-exchange interaction between the Cu-3d and N defect states is important.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.7
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• pp.567-571
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• 2009

Polycrystalline ZnO and Ga doped ZnO (GZO) films are deposited on glass substrate by RF magnetron sputtering at room temperature. The characteristics of ZnO and GZO films are investigated with X-ray diffraction measurement, UV-VIS-NIR spectrophotometer $(250{\sim}1200nm)$ and hall measurement. The post-growth thermal treatment of these films is carried out in N2 ambient at $500^{\circ}C$ for 30 min and an hour. ZnO and GZO films have different changing behavior of structural and optical properties by annealing. To use transparent conductive films for solar cell, films should have not only high transmittance but also good electrical property. Although as deposited GZO films have electrical properties than ZnO films, GZO films have not good transmittance properties. Consequently, we succeed that the high transmittance of GZO films is improved by annealing process.

• Journal of the Korean institute of surface engineering
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• v.44 no.4
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• pp.144-148
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• 2011

$Ga_2O_3$ doped $SnO_2$ thin films were grown by using pulsed laser deposition (PLD) technique on glass substrate. The optical and electrical properties of these films were investigated for different doping concentrations, oxygen partial pressures, substrate temperatures, and film thickness. The films were deposited at different substrate temperatures (room temperature to $600^{\circ}C$). The best opto-electrical properties is shown by the film deposited at substrate temperature of $300^{\circ}C$ with oxygen partial pressure of 80 m Torr and the gallium concentration of 2 wt%. The as obtained lowest resistivity is $9.57{\times}10^{-3}\;{\Omega}cm$ with the average transmission of 80% in the visible region and an optical band gap (indirect allowed) of 4.26 eV.

• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.41-45
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• 2016

ITO/GZO double layered thin films were prepared on transparent glass substrates. Ga-doped ZnO(GZO) films were deposited by RF magnetron sputtering using an ZnO:Ga (98: 2 wt%) target. The post deposition annealing process was conducted for 30 minutes at different temperature of 100, 200, 300 and $400^{\circ}C$, respectively. As increase annealing temperature, ITO/GZO double layered thin films show the increment of the prefer orientation of ZnO diffraction peak (002) in the XRD patterns. We obtained Ga-doped ZnO thin films with a lowest resistivity of $1.84{\times}10^{-4}{\Omega}-cm$ at $400^{\circ}C$ and transparency above 80% in visible ranges. The figure of merit obtained in this study means that ITO/GZO double layered thin films which annealed at $400^{\circ}C$ have the highest optoelectrical performance in this study.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.6-10
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• 2006

The sulphur spinel $FeCr_{2-x}M_xS_4$(M=Ga, In) have been studied with Mossbauer spectroscopy, x-ray diffraction (XRD), and vibrating sample magnetometer. The XRB patterns for samples $FeCr_{2-x}M_xS_4$(M=Ga, In: x=0.1, 0.3) reveal a single phase, which the Ga and In ions are partially occupied to the tetrahedral (A) site. The Neel temperature for the Ga substituted samples increases from 180 to 188 K, with increase from x=0.1 to 0.3. While, it decreases from 173 to 160 K, for the In substituted samples of the x=0.1 and 0.3, respectively. The Mossbauer spectra were collected from 4.2 K to room temperature. We have analyzed the Mossbauer spectra using eight Lorentzian lines fitting method for the $FeCr_{2-x}In_xS_4$(x=0.1) at 4.2 K, yielding the 1311owing results; $H_{hf}=146.0kOe,\;{\Delta}E_Q=1.88mm/s,\;\theta=36^{\circ},\;\phi=0^{\circ},\;\eta=0.6$, and R=1.9. The Ga ions enter into the both sites octahedral (B) and tetrahedral (A), simultaneously the same amounts of Fe ions migrate from the A to the B site, this result is an agreement with XRD results, too. The ${\Delta}E_Q$ of the A and B site in Mossbauer spectra of the samples $FeCr_{2-x}Ga_xS_4$(x=0.3) are 0.83 and 2.94mm/s, respectively. While they are 0.56 and 2.36mm/s for the $FeCr_{2-x}In_xS_4$(x=0.3). It is noticeable that the ${\Delta}E_Q$ for the Ga doped samples are larger than that of the corresponding In doped samples, in spite of the larger ionic radius for In ions. The bond lengths of Cr-S, for the Ga and In doped samples (x=0.3) are found to be 2.41 and $2.43\;{\AA}$, respectively. We interpret that the larger covalence effect from the smaller bond length induces a large asymmetric charge distribution. Finally, it gives a large quadrupole interaction.

• Korean Journal of Materials Research
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• v.30 no.12
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• pp.666-671
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• 2020

The electronic structure and magnetic properties of chalcopyrite (CH) AlGaAs2 with dopant Mn at 3.125 and 6.25 % concentrations are investigated using first-principles calculations. The CH AlGaAs2 alloy is a p-type semiconductor with a small band-gap. The AlGaAs2:Mn shows that the ferromagnetic (FM) state is the most energetically favorable one. The Mn-doped AlGaAs2 exhibits FM and strong half-metallic ground states.The spin polarized Al(Ga,Mn)As2 state (Al-rich system) is more stable than the (Al,Mn)GaAs2 state (Ga-rich system), which has a magnetic moment of 3.82mB/Mn. The interaction between Mn-3d and As-4p states at the Fermi level dominates the other states.The states at the Fermi level are mainlyAs-4p electrons, which mediate strong interaction between the Mn-3d and As-4p states. It is noticeable that the FM ordering of dopant Mn with high magnetic moment originates from the As(4p)-Mn(3d)-As(4p) hybridization, which is attributed to the partially unfilled As-4pbands. The high FM moment of Mn is due to the double-exchange mechanism mediated by valence-band holes.

• Proceedings of the Optical Society of Korea Conference
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• 2007.07a
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• pp.159-160
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• 2007

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.169-169
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• 2009

ZnO varistor에서 희토류 산화물의 첨가는 비선형계 높게 만든다. 회토류 금속의 첨가로 높아진 비저항을 낮추기 위하여 3족 원소인 Al, Ga을 첨가하여 첨가 함량에 따른 ZnO-$Pr_6O_{11}$ varistor의 비저항을 낮추고자 한다. 따라서 본 연구에서는 Al과 Ga 첨가에 따른 ZnO-$Pr_6O_{11}$을 일반적인 세라믹 공정에 따라 제조하여, Al과 Ga 첨가에 따른 ZnO-$Pr_6O_{11}$ varistor의 특성을 미세구조 조직, 밀도, I-V 특성, 비저항 측정하였다. ZnO의 bulk 및 grain boundary 특성 변화를 각종 유전함수($Z^*$, $Y^*$, $M^*$, $\varepsilon^*$, $tan{\delta}$)를 이용하여 고찰하였다.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.8
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• pp.24-30
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• 1998

A blue LED of $In_{x}Ga_{1-x}N$ multiple quantum well structure which had the blue emission spectrum of donor-acceptor pair transition generated form Si-Zn co-doped $In_{x}Ga_{1-x}N$ active layer, was fabricated. The $In_{x}Ga_{1-x}N$ MQW heterojunction LED structure was grown by MOCVD on the sapphire substrate with (0001) surface orientation at 800.deg. C. The fabricated LED exhibited forward cut-in voltage of 4~4.5V and reverse breakdown voltage of -13V. Its optical chracteristics showed that the center wavelength of peak emission occurred at 460nm and the optical intensity was increased linearly with respect to the injected electrical current above 5mA.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.12
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• pp.136-141
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• 1995

GaAs power MESFETs with 1 .mu.m gate length and an undoped GaAs surface layer on the doped GaAs channel are fabricated using IR(image reversal) and air-birdge processes. And then We have measured and calculated DC and RF characteristics. We have obtained saturation current 107-500 mA (197-255 mA/mm), maximum linear RF output power 111-518.8 mW (204-270 mW/mm), current gain cut-off frequency 7-10 GHz, maximum unilateral transducer power gain 5.7-12.7, and power added efficiencies 37.9-41.2 % from the devices with gate width 0.45-2.2 mm, at 6 GHz.