• Proceedings of the Korean Ceranic Society Conference
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• 2003.10a
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• pp.190.1-190
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• 2003

• Journal of Magnetics
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• v.19 no.2
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• pp.116-120
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• 2014

The spin-lattice relaxation time, $T_1$, for $^{69}Ga$, $^{71}Ga$, and $^{75}As$ nuclei in GaAs:$Mn^{2+}$ single crystals was measured as a function of temperature. The values of $T_1$ for $^{69}Ga$, $^{71}Ga$, and $^{75}As$ nuclei were found to decrease with increasing temperature. The $T_1$ values in GaAs:$Mn^{2+}$ crystal are similar to those in pure GaAs crystal. The calculated activation energies for the $^{69}Ga$, $^{71}Ga$, and $^{75}As$ nuclei are 4.34, 4.07, and 3.99 kJ/mol. It turns out that the paramagnetic impurity effect of $Mn^{2+}$ ion doped in GaAs single crystal was not strong on the spin-lattice relaxation time.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.83-90
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• 2023

The β-Ga₂O₃ has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga₂O₃ has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga₂O₃ single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga₂O₃ single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga₂O₃ were prepared by adding different mole ratios of SnO₂ powder to Ga₂O₃ powder, and β-Ga₂O₃ single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga₂O₃ single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga₂O₃ single crystal according to the Sn doping were extensively investigated.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.39 no.11
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• pp.40-46
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• 2002

A MEMS(Micro Electro Mechanical System) package using a doped-silicon(Si) carrier for coplanar microwave and millimeter-wave integrated circuits is proposed in order to reduce parasitic problems of leakage, coupling and resonance. The proposed carrier scheme is verified by fabrication and measuring a GaAs CPW(Coplanar Waveguide) on the three types of Si-carriers(gold-plated high resistivity, lightly doped, high resistivity). The proposed MEMS package using the lightly doped(15 ${\Omega}{\cdot}$) Si-carrier shows parasitic-free performance since the lossy Si-carrier effectively absorbs and suppresses the resonant leakage.

• Membrane Journal
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• v.22 no.6
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• pp.424-434
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• 2012

In this study, a ceramic membrane was prepared by CVD. Tube type alpha alumina support was used for substrate and added the Ga salt in intermediate layer. Synthesized method was counter diffusion CVD method at $650^{\circ}C$ with tetramethylorthosilane (TMOS). Gas permeation was measured at $600^{\circ}C$ using single-component $H_2$, $N_2$, $CO_2$ and $CH_4$. During the steam treatment, $H_2/N_2$ permselectivity of non-Ga silica membrane was decreased 926 to 829 at $600^{\circ}C$. On the other hand $H_2/N_2$ permselectivity of added Ga silica membrane was stable 910 to 904 at $600^{\circ}C$. These results show that the metal-doped membranes improved steam stability for gas separation.

• Korean Journal of Materials Research
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• v.23 no.1
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• pp.31-34
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• 2013

Trivalent cerium-ion-doped $Y_3(Al,\;Ga)_5O_{12}$ nanoparticle phosphor nanoparticles were synthesized using the reverse micelle process. The Ce doped $Y_3(Al,\;Ga)_5O_{12}$ particles were obtained from nitrate solutions dispersed in the nanosized aqueous domains of a micro emulsion consisting of cyclohexane as the oil phase and poly(oxyethylene) nonylphenyl ether (Igepal CO-520) as the non-ionic surfactant. The crystallinity, morphology, and thermal properties of the synthesized $Y_3(Al,\;Ga)_5O_{12}:Ce^{3+}$ powders were characterized by thermogravimetry-differential thermal analysis (TGA-DTA), X-ray diffraction analysis (XRD), scanning electron microscopy (SEM), and transmission electron microscopy. The crystallinity, morphology, and chemical states of the ions were characterized; the photo-physical properties were studied by taking absorption, excitation, and emission spectra for various concentrations of cerium. The photo physical properties of the synthesized $Y_3(Al,\;Ga)_5O_{12}:Ce^{3+}$ powders were studied by taking the excitation and emission spectra for various concentrations of cerium. The average particle size of the synthesized YAG powders was below $1{\mu}m$. Excitation spectra of the $Y_3Al_5O_{12}$ and $Y_3Al_{3.97}Ga_{1.03}O_{12}$ samples were 485 nm and 475 nm, respectively. The emission spectra of the $Y_3Al_5O_{12}$ and $Y_3Al_{3.97}Ga_{1.03}O_{12}$ were around 560 nm and 545 nm, respectively. $Y_3(Al,\;Ga)_5O_{12}:Ce^{3+}$ is a red-emitting phosphor; it has a high efficiency for operation under near UV excitation, and may be a promising candidate for photonic applications.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.3
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• pp.83-90
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• 2019

In this paper, Mg-doped AlN epilayers for power semiconductor devices are grown by mixed-source hydride vapor phase epitaxy. Magnesium is used as p-type dopant material in the grown AlN epilayer. The AlN epilayers on the GaN-templated sapphire substrate and GaN-templated-patterned sapphire substrate (PSS), respectively, as the base substrates for device application, were selectively grown. The surface and the crystal structures of the AlN epilayers were investigated by field emission scanning electron microscopy (FE-SEM) and high-resolution-X-ray diffraction (HR-XRD). From the X-ray photoelectron spectroscopy (XPS) and Raman spectra results, the p-type AlN epilayers grown by using the mixed-source HVPE method could be applied to power devices.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.1
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• pp.6-10
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• 2007

The a-plane GaN layer on r-plane $Al_2O_3$ substrate is grown by mixed-source hydride vapor phase epitaxy (HVPE). The GaN/InGaN heterostructure is performed by selective area growth (SAG) method. The heterostructure consists of a flown over mixed-sourec are used as gallium (or indium) and nitrogen sources. The gas flow rates of HCl and $NH_3$ are maintained at 10 sccm and 500 sccm, respectively. The temperatures of GaN source zone is $650^{\circ}C$. In case of InGaN, the temperature of source zone is $900^{\circ}C$. The grown temperatures of GaN and InGaN layer are $820^{\circ}C\;and\;850^{\circ}C$, respectively. The EL (electroluminescence) peak of GaN/InGaN heterostructure is at nearly 460 nm and the FWHM (full width at half maximum) is 0.67 eV. These results are demonstrated that the heterostructure of III-nitrides on r-plane sapphire can be successfully grown by mixed-source HVPE with multi-sliding boat system.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.95-95
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• 2003

최근, 대면적 평판표시소자 제작을 위한 전기발광 (EL; electroluminescence)소자용 소재로서 GaN 분말을 적용하고자 하는 연구가 진행되고 있다. 이와 같이 GaN 분말을 EL 소재로 사용하기 위해서는 원하는 파장의 빛을 발광할 수 있도록 특정의 불순물을 첨가하여야 할 필요가 있다. Mg이 첨가된 GaN 분말의 합성과 특성에 대한 연구가 있었으며, 희토류 원소가 첨가된 GaN 분말의 특성이 보고된바 있다. 본 논문에서는 GaOOH 분말을 출발물질로 채택하여 Zn가 첨가된 GaN 분말을 합성하고 광학적인 특성을 조사하였다. Zn가 첨가된 GaN 분말을 합성하기 위하여, 우선 CaOOH 분말 1g과 일정량의 ZnO 또는 Zn(NO$_3$)$_3$를 함께 섞어 유발에서 습식 혼합한 후 건조시켰다. Ga에 대한 Zn의 몰 비는 0.1부터 30 까지 변화시켰다. 반응온도는 900~110$0^{\circ}C$의 범위에서 변화시켰고, 반응시간은 1~4시간 범위에서 변화시켰으며, NH$_3$의 유량은 400 sccm으로 하였다. X선 회절분석장치를 사용하여 결정구조를 확인하였고, Zn의 첨가에 따른 광학적 특성은 10 K의 온도에서 광루미네센스(PL; photoluminescence)를 측정하여 평가하였다.

• Proceedings of the Korea Crystallographic Association Conference
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• 2000.05a
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• pp.33-33
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• 2000