• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.148-149
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• 2012

This paper reports doping of carbon atoms in GaN layer, which based on dimethylhydrazine (DMHy) and growth temperature. It is well known that dislocations can act as non-radiative recombination center in light emitting diode (LED). Recently, many researchers have tried to reduce the dislocation density by using various techniques such as lateral epitaxial overgrowth (LEO) [1] and patterned sapphire substrate (PSS) [2], and etc. However, LEO and PSS techniques require additional complicated steps to make masks or patterns on the substrate. Some reports also showed insertion of carbon doped layer may have good effect on crystal quality of GaN layer [3]. Here we report the growth of GaN epitaxial layer by inserting carbon doped GaN layer into GaN epitaxial layer. GaN:C layer growth was performed in metal-organic chemical vapor deposition (MOCVD) reactor, and DMHy was used as a carbon doping source. We elucidated the role of DMHy in various GaN:C growth temperature. When growth temperature of GaN decreases, the concentration of carbon increases. Hence, we also checked the carbon concentration with DMHy depending on growth temperature. Carbon concentration of conventional GaN is $1.15{\times}1016$. Carbon concentration can be achieved up to $4.68{\times}1,018$. GaN epilayer quality measured by XRD rocking curve get better with GaN:C layer insertion. FWHM of (002) was decreased from 245 arcsec to 234 arcsec and FWHM of (102) decreased from 338 arcsec to 302 arcsec. By comparing the quality of GaN:C layer inserted GaN with conventional GaN, we confirmed that GaN:C interlayer can block dislocations.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.2
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• pp.57-62
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• 2018

In this study, we investigated the impurity effect of $Ga_2O_3$ doped thin film by simple doping method using Mg acetate solution. Both undoped $Ga_2O_3$ thin films and Mg-doped $Ga_2O_3$ thin films were grown on Si substrates at 600 and $900^{\circ}C$ for 30 minutes by means of a customized MOCVD method. As a result of the surface analysis, there were no obvious morphological differences by Mg impurity implantation. The surface of the thin film grown at $900^{\circ}C$ was rougher than those grown at $600^{\circ}C$ and polycrystallization was achieved. As a result of the optical property analysis, in the case of the doped sample, the overall emission peak was red shifted and the UV radiation intensity was increased. As a result of the I-V curve, the leakage current of the $600^{\circ}C$ growth thin film decreased by the Mg impurity and the photocurrent of the growth thin film of $900^{\circ}C$ increased.

• Proceedings of the Korean Ceranic Society Conference
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• 2004.04b
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• pp.35.1-35.1
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• 2004

• Proceedings of the Optical Society of Korea Conference
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• 1997.08a
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• pp.50-50
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• 1997

• Proceedings of the Optical Society of Korea Conference
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• 1997.08a
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• pp.88-88
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• 1997

• Proceedings of the KIEE Conference
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• 1987.07a
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• pp.389-392
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• 1987

The energy gaps of undoped and Cr doped GaAs and $Al_{0-3}Ga_{0-7}As$ was measured nondestructively using surface acoustic wave (SAW) technique. The result is good agreement with other reported result. This technique is inexpensive and simple one for the measurement of mole fraction of $Al_xGa_{1-x}As$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.09a
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• pp.52-59
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• 2001

The photoluminescence and the photo-current from p-type GaN films were investigated on both room- and low-temperatures for various Mg doping concentrations. At a low Mg doping level, there exists a photoluminescence center of the donor and the acceptor pair transition of the 3.28-eV band. This center is correlated with the defects for a shallow donor of the VGa and for an acceptor of MgGa. The acceptor level shows the binding energy of 0.2-0.25 eV, which was observed by the photon energy of the photo-current signal of 3.02-3.31 eV. At a high Mg doping level, there is a photoluminescence center of a deep donor and an acceptor pair transition of the 2.76-eV blue band. This center is attributed to the defect structures of MgGa-VN for the deep donor and MgGa for the acceptor. For low. doped samples, thermal annealing provides an additional photo-current signal for an unoccupied deep acceptor levels of 0.87-1.35 eV above valence band, indicating the p-type activation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.794-799
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• 2017

Ga-doped ZnO (GZO) films were deposited by an RF magnetron sputtering method on glass substrates using ZnO as a target containing 5 wt% $Ga_2O_3$ powder (for Ga doping). The structural, electrical, and optical properties of the GZO thin films were investigated as a function of the substrate temperatures. The deposition rate decreased with increasing substrate temperatures from room temperature to $350^{\circ}C$. The films showed typical orientation with the c-axis vertical to the glass substrates and the grain size increased up to a substrate temperature of $300^{\circ}C$ but decreased beyond $350^{\circ}C$. The resistivity of GZO thin films deposited at the substrate temperature of $300^{\circ}C$ was $7{\times}10^{-4}{\Omega}cm$, and it showed a dependence on the carrier concentration and mobility. The optical transmittances of the films with thickness of $3,000{\AA}$ were above 80% in the visible region, regardless of the substrate temperatures.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.3
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• pp.242-248
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• 2008

The structural, optical and electrical properties of ZnO films doped with 1.5 at% of 3A materials(B, Al, Ga, In) were studied by sol-gel process. The films were found to be c-axis (002) oriented hexagonal structure on glass substrate, when post heated at 500 $^{\circ}C$. The surface of the films showed a uniform and nano size microstructure and the crystalline size of doped films decreased. The lattice constants of ZnO:B/Al/Ga increased than that of ZnO, while ZnO:In decreased. All the films were highly transparent(above 90 %) in the visible region. The energy gaps of ZnO:B/Al/Ga were increased a little, but that of ZnO:In was not changed. The resistivities of ZnO:Al/Ga/In were less than 0.1 $\Omega$cm. All the films showed a semiconductor properties in the light or temperature, however ZnO:In was less sensitive to it. A figure of merit of ZnO:In had the highest value of 0.025 $\Omega^{-1}$ in all samples.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.4
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• pp.121-128
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• 1996

The impact ionization rate of thethighly-doped AlGaAs/GaAs quantum well structure is calculated, which is an important parameter ot design theinfrared detector APD and the novel neural device. In conjunction with ensemble monte carlo method and quantum mechanical treatment, we analyze the effects of the parameters of quantum well structure on the impact ionization rate. Since the number of the occupied subbands increases while the energy of the subbands decreases as the width of quantum well increases, the impact ionization rate increases in the range of th esmall well width but gradually the increament slows down and is finally saturated. Due to the effect of the energy of the injected electrons into the quantum well and the tunneling through the barrier, the impact ionization rate increases for the range of the small barrier width and decreases for the range of the large barrier width. Thus, there exists a barrier width to maximize the impact ionzation rate for a mole fraction x, and the barrier width moves to the larger vaue as the mole fraction x increases. The impact ionization rate is much more sensitive to the variation of the doping density than that of the other quantum well parameters. We found that there is a limit of the doping density to confine the electronics in the quantum well effectively.