• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.314.1-314.1
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• 2014

The properties of Ni/Au Ohmic contacts formed on nonpolar a-plane GaN grown on r-plane sapphire substrate with different tilt angles are investigated using current-voltage (I-V) measurements. To investigate the effects of pattern direction and size on Ohmic contact properties of a-plane GaN, transmission line method (TLM) patterns are formed either along c-axis and m-axis on nonpolar GaN surface with different size. I-V measurement results show that the size of TLM pattern and formation direction of electrode have an effect on the electrical properties of a-plane GaN. The large sized patterns show the relatively lower sheet resistance compared to the small sized patterns. In addition, the sheet resistance of a-plane GaN along m-axis shows lower values than that along the c-axis. Finally, the effects of miscut angle of r-sapphire substrate ($0.2^{\circ}$, 0.4oand $0.6^{\circ}$) on electrical properties of a-plane GaN will be discussed.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.5
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• pp.237-243
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• 2018

In-rich InGaN epilayers were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (RF-MBE). InGaN epilayers grown at various growth condition were observed by SEM, XRD, and RHEED. When plasma power of nitrogen increased from 290 to 350 W, surface morphology and crystal quality became worse according to more active nitrogen on the surface of InGaN at N-rich growth condition. As In composition was reduced from 89 to 71% by changing the incoming flux of In and Ga, surface morphology and crystal quality became worse. In addition, weak peaks of cubic InGaN phase was observed from InGaN layer with 71% In composition by XRD ${\Phi}$ scan measurement. When growth temperature decreased from 500 to $400^{\circ}C$, RHEED diffraction pattern was changed to be from streaky to spotty which means atomically rough surface, and spotty pattern showed cubic symmetry of InGaN clearly. XRD ${\Phi}$ scan measurement gave clear evidence that more cubic InGaN phase was formed at low growth temperature. All these results indicates that extremely low surface mobility of Ga adatom caused inferior crystal quality and cubic InGaN phase.

• Proceedings of the Korean Magnestics Society Conference
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• 1991.11a
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• pp.74-75
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• 1991

• Transactions on Electrical and Electronic Materials
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• v.5 no.3
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• pp.113-119
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• 2004

Structural and optical properties of as-synthesized, Ga$_2$O$_3$-coated, and Al$_2$O$_3$-coated GaN nanowires are examined in this paper. GaN nanowires were synthesized by thermal evaporation of ball-milled GaN powders in an NH$_3$ atmosphere. The thermal annealing of the as-synthesized GaN nanowires in an argon atmosphere allows their surfaces to be oxidized, leading to the formation of 2nm-thick Ga$_2$O$_3$ layers. For the oxidized GaN nanowires, the distances between the neighboring lattice planes are shortened, and an excitonic emission band is remarkably enhanced in intensity, compared with the as-synthesized GaN nanowires. In addition, the as-synthesized GaN nanowires were coated cylindrically with Al$_2$O$_3$ by atomic layer deposition technique. Our study suggests that the Al$_2$O$_3$-coating passivates some of surface states in the GaN nanowires.

• Bulletin of the Korean Chemical Society
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• v.15 no.8
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• pp.663-669
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• 1994

Decay kinetics of Ga(5s), Ga(5p) and Ga(4d) atoms in Ar were studied by laser induced fluorescence technique. Theground state gallium atoms in the gas phase were generated by pulsed dc discharge of trimethyl gallium and argon mixtures. Both pulsed discharge and YAG-DYE laser system were controlled by a dual channel pulse generator and the delay time between the end of discharge and laser pulses was set 3.0-6.0 ms. The Ga(5s) and Ga(4d) atoms were generated by single photon excitation from the ground state Ga atoms and radiative lifetimes as well as the total quenching rate constants in Ar were obtained from the pressure dependence of the fluorescence decay rates. The Ga(5p) atoms were populated by a two-photon excitation method and the cascade fluorescence from Ga(5s) atoms were analyzed to extract quenching rate constant of Ga(5p) atoms by Ar in addition to radiative lifetimes of Ga(5p) state. The magnitudes of the quenching rate constants by Ar for the low-lying excited states of Ga atoms are 1.6-3$ {\times}10^{-11}cm^3$ molecul$e^{-1}s^{-1}$, which are much larger than those for alkali, alkaline earth and Group 12 metals. Based on the measured rate constants, kinetic simulations were done to assign state-to-state rate constants.

• Journal of the Korean Ceramic Society
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• v.32 no.11
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• pp.1269-1275
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• 1995

Effects of GeO2 addition on the thermal and structural stabilities of PbO-Bi2O3-Ga2O3 glasses were studied. Thermal stabilities, as assessed by the weighted thermal stability factors [(Tx-Tg)/Tg], increased with GeO2 concentraton from 0.097 to 0.210 with the addition of 20 mol% GeO2. Increasing GeO2 content resulted in the decrease of apparent density, molar volume, refractive index and thermal expansion. On the other hand, IR transmission cut-off (λT=50%) moved from 6.73${\mu}{\textrm}{m}$ for the ternary PbO-Bi2O3-Ga2O3 glass to shorter wavelength side, 5.98${\mu}{\textrm}{m}$ for a glass containing 20mol% GeO2. There were little change with GeO2 content, however, in the activation energies for the viscous flow of approximately 140 kcal/mole within the temperature interval of 300~50$0^{\circ}C$. Addition of GeO2 to PbO-Bi2O3-Ga2O3 glasses enhanced the thermal and structural stabilities significantly at the expense of their infrared transmittance. An appropriate compsomise between these two opposite trends should be made following the specifications of the final applications.

• Journal of Magnetics
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• v.21 no.1
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• pp.12-19
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• 2016

The <100> oriented $Fe_{83}Ga_{17}$ alloys with various contents of NbC or B were prepared by directionally solidification method at the growth rate of $720mm{\cdot}h^{-1}$. With a small amount of precipitates, the columnar grains grew with cellular mode during directional solidification process, while like-dendrite mode of grains growth was observed in the alloys with higher contents of 0.5 at% due to the dragging effect of precipitates on the boundaries. The NbC precipitates disperse both inside grains and along the boundaries of $Fe_{83}Ga_{17}$ alloys with NbC addition, and the Fe2B secondary phase particles preferentially distribute along the grain boundaries in B-doped alloys. Precipitates could affect grain growth and improved the <100> orientation during directional solidification process. Small amount of precipitate element addition slightly increased the magnetostrictive strain, and a high value of 335 ppm under pre-stress of 15 MPa was achieved in the alloys with 0.1 at% NbC. Despite the fact that the effect on magnetic induction density of small amount of precipitates could be negligible, the coercivity markedly increased with addition of precipitate element for $Fe_{83}Ga_{17}$ alloy due to the retarded domain motion resulted by precipitates.

• Microbiology and Biotechnology Letters
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• v.3 no.1
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• pp.7-15
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• 1975

The possibilities of utilizing acid-hydrolyzate of "Sliced and dried sweet potatoes" as a carbon source for the microbial production of L-Glutamic Acid(L-GA) with Micrococcus glutamicus were investigated and the results showed as follows： 1) The highest hydrolysis rate, 74.6% of the reducing sugar based on the weight of dry matter, was obtained when the sweet potatoes were hydrolyzed with 0.8% of HCI at 2.0kg/$cm^2$ for 30 minutes. The most favorable hydrolyzate for the growth of the cells, however, was found to be the one obtained by treating the sweet potatoes with 0.5% HCI at 2. 0kg/$cm^2$ for 10 minutes. Reducing sugar content of the hydrolyzate was 10% as glucose. 2) Biotin content of the hydrolyzate was 25$\mug$/1 and it was proved to be excess in amount for the L-GA production. 3) The effects of addition of antibiotics, alcohols and fatty acid esters on the L-GA production were tested in the biotin excess medium. The production of L-GA was most increased to 32.5g/l with the addition of 10 I. U. of penicillin per ml. to the culture medium at 4 hours after inoculation. But the addition of alcohols, especially fatty acid esters, showed no significant effects. 4) Among the organic nutrients tested. " Gluten acid hydrolyzate" greatly enhanced the production of L-GA adding it＇s concentration of 1.0% to the medium. 5) The maximum production of L-GA resulted in 35g/1 when the cells were grown for 48 hours in the hydrolyzate medium supplemented with 1.0% of "Gluten acid hydrolyfate" and with 10 I. U. of penicillin per ml added at 4 hours after cultivation.

• Journal of the Korean Ceramic Society
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• v.25 no.1
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• pp.27-34
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• 1988

In order to investigate the reason of changes in the physical properties of glasses near the region for which R(Ga/Na)=1, spectroscopic studies using FT-IR and Raman spectroscopy have been carried out on Na2O.2SiO2 glass with addition of Ga2O3 from 0 to 35 mole %, i.e., from R=0 to 1.61. The main purpose of this work is to investigate the coordination number of Ga3+ in glass with variation of glass composition and to determine the existence of tricluster in the Ga-rich region for which R>1.0 in Na2O-Ga2O3-SiO2 system.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.211-220
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• 2014

In this paper, we present a review of optical and structural studies of $GaBi_xAs_{1-x}$ epilayers grown by Molecular Beam Epitaxy (MBE) on (311)B and (001) GaAs substrates with different As fluxes. The results indicate that under near-stoichiometric conditions the bismuth incorporation is higher for samples grown on (311)B GaAs substrates than for those grown on (001) GaAs. In addition, carrier localization effects in GaBiAs layers are clearly revealed for both samples by optical measurements. The (311)B samples showed evidence of higher density of defects. It has also been found that the nonradiative centers play a significant role in the recombination process in this material system. The influence of post-growth annealing on the microstructural, optical, and magneto-optical properties was also investigated. An important improvement of optical and spin properties after thermal annealing due to the reduction of defects in the GaBiAs layers was observed.