• 한국발생생물학회지:발생과생식
• /
• 제5권1호
• /
• pp.23-33
• /
• 2001

포유류의 난자가 수란관내로 배란될 때는 난포액 성분도 같이 수란관내로 들어간다. 본 연구에서는 처음으로 난포액의 일부 성분이 수란관액에 의해서 변화하는 것을 관찰하였다. 사람의 난포액을 gelatin zymogram으로 분석한 결과 621kDa gelatinase 이외에 110kDa gelatinase (GA110) 등의 여러 gelatinase 활성이 나타났다. 이 활성들은 EDTA나 phenanthroline에 의해 억제된 반면 PMSF 처리에 의해서는 아무런 변화가 없었다. 소의 수란관액에서는 62kDa gelatinase의 활성만이 주로 관찰되었다. 소의 수란관 액과 사람의 난포액을 1:1로 섞고 이를 37$^{\circ}$C에서 3시간 동안 둔 결과 사람의 난포액의 GA110 활성은 사라졌다. 사람의 난포액에 APMA를 첨가한 결과 GA110의 활성은 대부분 감소하고 대신 62kDa gelatinase의 활성은 오히려 증가하였다. 반면에 사람의 난포액에 EDTA를 3시간 동안 처리한 결과 GA110의 활성은 오히려 현저히 증가하였고 이 때 다른 gelatinases의 활성은 영향을 받지 않았다. PMSF나SBTI는 난포액내의 gelatinases활성에 아무런 변화를 일으키지 않았다. EDTA, PMTA 혹은 SBTI 등의 proteinase inhibitor를 미리 처리한 사람의 난포액에 소의 수란관 내액을 섞은 경우에도GA110의 활성은 여전히 감소하였다. 사람의 혈청에서도 EDTA에 의해 활성이 현저히 증가하는 GA110이 발견되었다. 사람의 난포액과 유사하게 혈청내의 GA110도 소의 수란관액에 의하여 활성이 사라졌다. 그러나 사람의 난포과립세포의 추출물에서는 단지 92kDa gelatinase만 관찰이 되었다. 마지막으로 anti-human gelatinase A 항체를 사용하여 사람의 난포액과 혈청 그리고 난포과립세포의 추출액을 western blotting한 결과 621kDa과 GA110 만이 항원-항체 반응을 나타내었다. 이 같은 결과로 미루어 사람의 난포액과 혈청에는 gelatinase A의 독특한 isoform인 GA110이 있으며 특히 난포액내의 GA110은 수란관액성분에 의해 선택적으로 분해되는 것으로 여겨진다.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 1999년도 추계학술발표회 초록집
• /
• pp.49-49
• /
• 1999

In this study, $Cl_2/BCI_3$ magnetized inductively coupled plasmas (MICP) were used to etch GaN and the effects of magnetic confinements of inductively coupled plasmas on the GaN etch characteristics were investigated as a function of $Cl_2/BCI_3$. Also, the effects of Kr addition to the magnetized $Cl_2/BCI_3$ plasmas on the GaN etch rates were investigated. The characteristics of the plasmas were estimated using a Langmuir probe and quadrupole ma~s spectrometry (QMS). Etched GaN profiles were observed using scanning electron microscopy (SEM). The small addition of $Cl_2/BCI_3$ (10-20%) in $Cl_2$ increased GaN etch rates for both with and without the magnetic confinements. The application of magnetic confinements to the $Cl_2/BCI_3$ inductively coupled plasmas (ICP) increased GaN etch rates and changed the $Cl_2/BCI_3$ gas composition of the peak GaN etch rate from 10% $BCI_3$ to 20% $BCI_3$. It also increased the etch selectivity over photoresist, while slightly reducing the selectivity over $Si0_2$. The application of the magnetic field significantly increased positive $BCI_2{\;}^+$ measured by QMS and total ion saturation current measured by the Langmuir probe. Other species such as CI, BCI, and CI+ were increased while species such as $BCl_2$ and $BCI_3$ were decreased with the application of the magnetic field. Therefore, it appears that the increase of GaN etch rate in our experiment is related to the increased dissociative ionization of $BCI_3$ by the application of the magnetic field. The addition of 10% Kr in an optimized $Cl_2/BCI_3$ condition (80% $Cl_2/$ 20% $BCI_3$) with the magnets increased the GaN etch rate about 60%. More anisotropic GaN etch profile was obtained with the application of the magnetic field and a vertical GaN etch profile could be obtained with the addition of 10% Kr in an optimized $Cl_2/BCI_3$ condition with the magnets.

• 한국표면공학회지
• /
• 제32권3호
• /
• pp.416-422
• /
• 1999

The characteristics of inductively coupled Cl$_2$/BCl$_3$ plasmas during the GaN etching were studied using plasma mass spectrometry by measuring the relative amounts of reactive ions, neutrals, and etch products. GaN etch rates increased with the increase of pressure and showed a maximum near 25mTorr for the pure $Cl_2$ and near 30mTorr for $Cl_2$$BCl_3$. The addition of$ BCl_3$ to $Cl_2$ also was increased GaN etch rates until 50%BCl$_3$ was mixed to $Cl_2$. The GaN etching with pure $Cl Cl_2$ appears to be related to the combination of Cl$_2^{+}$ ion bombardment and the chemical reaction of Cl radicals. In the case of the GaN etching with Cl$_2$/BCl$_3$, in addition to the combined effect of$_2^{ +}$ ions and Cl radicals, $_BCl2^{+ }$ ions appear to be responsible for some of GaN etching even though they do not have significant effect on the GaN etching compared to $Cl_2^{+}$ and Cl. $Ga^{+ }$ , $GaCl^{+}$ , $GaCl_2^{+}$ , and $N_2^{+}$ were observed as the positive ions of etch products, and the intensities of these etch products showed the same trends as those of GaN etch rate. Among the etch products, Ga and $N_2$ appear to be the main etch products.

• 약학회지
• /
• 제35권3호
• /
• pp.174-181
• /
• 1991

These experiments were conducted to investigate the effects of glycyrrhizin(GL) and glycyrrhetinic acid(GA) on histamine synthesis, lymphocyte blastogenesis in C57BL/6J mice splenocytes, IL-1 production, $Ca^{2+}$ uptake by macrophage-like P388D$_{1}$ cells and plaque forming cell assay against SRBC. Histamine contents, lymphocyte blastogenesis, IL-1 activity, $Ca^{2+}$ uptake and plaque forming cell were determined by enzyme isotope method, [sup 3/H]-thymidine incorporation, C3H/HeJ mouse thymocytes proliferation, the addition of 5 $\mu$Ci/ml $^{45}$Ca$^{2+}$ to P388D$_{1}$, cell suspension and assay to sheep red blood cell, respectively. Cytotoxicity, which was expressed as 50% mortality, was occurred by the addition of GL(10$^{-3}$M) and GA(10$^{-4}$M). Histamine production in mouse spleen cell culture was significantly increased by the addition of 0.25 $\mu\textrm{g}$/ml of Con A, after 48 hour incubation. Con A dependent T-lymphocyte proliferation was also enhanced by the addition of 0.25 .mu.g/ml of Con A. The effects of GL on histamine contents and T-lymphocyte proliferation were significantly decreased at high dose (10$^{-5}$M), while IL-1 activity was remarkably suppressed by 10$^{-8}$~10$^{-4}$M of GL. $Ca^{2+}$ uptake was not changed, but antibody production was increased by GL(10 mg/kg). GA inhibited histamine contents at 10$^{-9}$~10$^{-7}$ and depressed Con A (0.25 $\mu\textrm{g}$/ml) dependent T-lymphocyte proliferation at 10$^{-7}$~10$^{-5}$M of GA, but increased suboptimal dose (Con A 0.1 $\mu\textrm{g}$/ml) at 10$^{-9}$~10$^{-7}$M of GA. IL-1 activity was suppressed by 10$^{-8}$~10$^{-4}$M of GA and $Ca^{2+}$ uptake was enhanced by 10$^{-9}$~10$^{-6}$ of GA, but antibody production was not changed by GA. From the above results, it is suggested that GL and GA have immuno-regulatory action. GL decreased cell-mediated immune response, and increased humoral immune response at high dose. On the other hand, low dose of GA enhanced cell-mediated immune response, while high doses of GA decreased humoral immune reaction.

• 센서학회지
• /
• 제25권5호
• /
• pp.320-325
• /
• 2016

In this paper, we propose an AlGaN/GaN-based extended-gate metal-insulator-semiconductor high electron mobility transistor (MISHEMT)-type biosensor for detecting streptavidin-biotin complexes. We measure the drain current of the fabricated sensor, which varies depending on the antibody-antigen reaction of streptavidin with biotin molecules. To confirm the immobilization of biotin polyethylene glycol (PEG) thiol, we analyze the Au surface of a GaN sample using X-ray photoelectron spectroscopy (XPS). The proposed biosensor shows higher sensitivity than Si-based extended-gate metal oxide semiconductor field effect transistor (MOSFET)-type biosensor. In addition, the proposed AlGaN/GaN-based extended-gate MISHEMT-type biosensor exhibits better long-term stability, compared to the conventional AlGaN/GaN-based MISHEMT-type biosensor.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
• /
• pp.361-365
• /
• 2003

Planar Inductively Coupled Plasma (PICP) etching of InGaP was performed in $BCl_3,\;BCl_3/Ar\;and\;BCl_3/Ne$ plasmas as a function of ICP source power ($0\;{\sim}\;500\;W$), RIE chuck power ($0\;{\sim}\;150\;W$), chamber pressure ($5\;{\sim}\;15\;mTorr$) and gas composition of $BCl_3/Ar\;and\;BCl_3/Ne$. Total gas flow was fixed at 20 sccm (standard cubic centimeter per minute). Increase of ICP source power and RIE chuck power raised etch rate of InGaP, while that of chamber pressure reduced etch rate. We also found that some addition of Ar and Ne in $BCl_3$ plasma improved etch rate of InGaP. InGaP etch rate was varied from $1580\;{\AA}/min$ with pure $BC_3\;to\;2800\;{\AA}/min$ and $4700\;{\AA}/min$ with 25 % Ar and Ne addition, respectively. Other process conditions were fixed at 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr chamber pressure. SEM (scanning electron microscopy) and AFM (atomic force microscopy) data showed vertical side wall and smooth surface of InGaP at the same condition. Proper addition of noble gases Ar and Ne (less than about 50 %) in $BCl_3$ inductively coupled plasma have resulted in not only increase of etch rate but also minimum preferential loss and smooth surface morphology by ion-assisted effect.

• 한국에너지공학회:학술대회논문집
• /
• 한국태양에너지학회, 한국에너지공학회 1993년도 춘계 공동학술발표회 초록집
• /
• pp.53-59
• /
• 1993

The interests on GaAs solar cell grown on Ge substrates as an alternative of GaAs substrate arises from its very close lattice parameters, very small difference in thermal expansion coefficients, and much higher fracture toughness between GaAs and Ge. In addition, for many space power application, it would be a most attractive solar cell with high radiation resistance of GaAs and high reliability for the reverse current damage of Ge, and expecting the theoretical efficiency limit of the tandem GaAs/Ge solar cell is 34% under 1 Sun, AM 0, and 28$^{\circ}C$ condition. In this report, we have reviewed the performance and the manufacturing technics of GaAs/Ge solar cell, and current status of research in GaAs/Ge solar cell.

• 전자공학회논문지A
• /
• 제29A권3호
• /
• pp.59-65
• /
• 1992

In this paper, the Numerov method is applied to solve the Schroedinger equation for $Al_{0.3}Ga_{0.7}AS/GaAs/Al_{0.3}Ga_{0.7}As$ double-heterojunction HEMT structures. The 3 subband energy levels, corresponding wave functions, 2-dimensional electron gas density, and conduction band edge profile are calculated from a self-consistent iterative solution of the Schroedinger equation and the Poisson equation. In addition, 2-dimensional electron gas densities in a quantum well of double heterostructure are calculated as a function of applied gate voltage. The density in the double heterojunction quantum well is increased to about more than 90%, however, the transconductance of the double heterostructure HEMT is not improved compared to that of the single heterostructure HEMT. Thus, double-heterojunction structures are expected to be suitable to increase the current capability in a HEMT device or a power HEMT structure.

• 한국전기전자재료학회논문지
• /
• 제16권2호
• /
• pp.89-96
• /
• 2003

Photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy have been performed at 6 K on the 1540 nm $^4$I$\_$(13/2)/\longrightarrow$^4$I$\_$(15/2)/ emission of Er$\^$+3/ in in situ Er-doped GaN The PL and PLE spectra of in situ Er-doped GaN are compared with those of Er-implanted GaN in this study. The lineshapes of the broad PLE absorption bands and the broad PL bands in the spectra of the in situ Er-doped GaN are similar to those in Er-doped glass rather than in the Er-implanted GaN. The PL spectra of this in situ Er-doped GaN are independent of excitation wavelength and their features are significantly different from the site-selective PL spectra of the Er-implanted GaN. These PL and PLE studies reveal that a single type of Er$\^$3+/ sites is present in the in situ Er-doped GaN and these Er sites are different from those observed in the Er-implanted GaN. In addition, the comparison of the PL single strength illustrates that the excitation of Er$\^$3+/ sites through the energy absorption of defects in Er-implanted GaN.

• 한국재료학회지
• /
• 제9권5호
• /
• pp.496-502
• /
• 1999

In this study, n-GaN samples were etched using planar inductively coupled $Cl_2$/$H_2$plasmas and the effects of plasma conditions on the etch properties, surface composition, and ohmic contact formation were investigated as a function of gas combination. As the addition of hydrogen to the $Cl_2$plasma increased to 100%, GaN etch rates decreased due to the reduction of chlorine radical density. Even though the variation of the surface composition is limited under $50\AA$, the surface composition was also changed from Ga-rich to N-rich with the increased addition of hydrogen to $Cl_2$. Etch products by the reaction between Ga in GaN and Cl in $Cl_2$ plasma were investigated using OES analysis during the GaN etching. The value of specific resistivity of the contact formed on the n-GaN etched using 100% $Cl_2$plasma was 3.1$\times$10\ulcorner$\Omega$$\textrm{cm}^2$, and which was lower than that formed on the non-etched n-GaN. However, the resistively was increased with the increased hydrogen percent in $Cl_2$/$H_2$.