• Journal of the Korean Vacuum Society
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• v.10 no.4
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• pp.396-402
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• 2001

MgO thin films with 1000 $\AA$ thickness were deposited on Cu substrates by using an electron gun evaporator at room temperature. A 1000 $\AA$ thick Al layer was deposited on the MgO for removing the charging effect of the MgO thin film during the measurements of the sputtering yields. A Ga ion liquid metal was used as the focused ion beam(FIB) source. The ion beam was focused by using double einzel lenses, and a deflector was employed to scan the ion beams into the MgO layer. Both currents of the secondary particle and the probe ion beam were measured, and they dramatically changed with varying the applied acceleration voltage of the source. The sputtering yield of the MgO layer was determined using the values of the analyzed probe current, the secondary particle current, and the net current. When the acceleration voltage of the FIB system was 15 kV, the sputtering yield of the MgO thin film was 0.30. The sputtering yield of the MgO thin film linearly increases with the acceleration voltage. These results indicate that the FIB system is promising for the measurements of the sputtering yield of the MgO thin film.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.15 no.6
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• pp.58-63
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• 2006

FIB equipment can perform sputtering and chemical vapor deposition simultaneously. It is very advantageously used to fabricate a micro structure part having 3D shape because the minimum beam size of ${\Phi}10nm$ and smaller is available. Since general FIB uses very short wavelength and extremely high energy, it can directly make a micro structure less than $1{\mu}m$. As a result, FIB has been probability in manufacturing high performance micro devices and high precision micro structures. Until now, FIB has been commonly used as a very powerful tool in the semiconductor industry. It is mainly used for mask repair, device correction, failure analysis, IC error correction, etc. In this paper FIB-Sputtering and FIB-CVD characteristic analysis were carried out according to $Ga^+$ ion beam current that is very important parameter for minimizing the pattern size and maximizing the yield. Also, for FIB-Sputtering burr caused by redeposition of the substrate characteristic analysis was carried out.

• 대한방사선방어학회:학술대회논문집
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• 2011.11a
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• pp.246-247
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• 2011

• Electrical & Electronic Materials
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• v.7 no.2
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• pp.100-106
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• 1994

A bilayer film consisting of a layer of a-Se$_{75}$ Ge$_{25}$ with a surface layer of silver -100[.angs.] thick and a monolayer film of a-Se$_{75}$ Ge$_{25}$ are irradiated with 9[keV] Ga$^{+}$ ion beam. The Ga$^{+}$ ion (10$^{16}$ [ions/cm$^{2}$] exposed a-Se$_{75}$ Ge$_{25}$ and Ag/a-Se$_{75}$ Ge$_{25}$ thin films show an increase in optical absorption, and the absorption edge on irradiation with shifts toward longer wavelength. The shift toward longer wavelength called a "darkening effect" is observed also in film exposure to optical radiation(4.5*10$^{20}$ [photons/cm$^{2}$]). The 0.3[eV] edge shift for ion irradiation films is about twice to that obtained on irradiation with photons. These large changes are primarily due to structural changes, which lead to high etch selectivity and high sensitivity.

• 한국전자현미경학회:학술대회논문집
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• 1999.05a
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• pp.48-49
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• 1999

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.12
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• pp.1841-1851
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• 1990

Self-aligned gate GaAs MESFETs using ion beam deposited tungsten applicable to GaAs LSI fabrication process have been fabricated. Silicon implanted samples were annealed using isothermla two step RTA process and conventional one step RTA process. The electrical and physicla characteristics of annealed samples were investigated using Hall and I-V measurements. As results of measurements, activation characteristics of the isothermal two step RTA process are better than those of one step annealed ones. Using the developed processes, GaAs SAFETs (Self-Aligned Gate FET) have been fabricated and electdrical characteirstics are measured. As results, subthreshold currents of SAGFETs are 6x10**-10 A/\ulcorner, that is compatible to conventional MESFET, maximum transconductances of 0.75\ulcorner gate MESFET using one step RTA process and 2\ulcorner gate MESFET using isothermal two step RTA process are 18 mS/mm, 41 mS/mm respectively.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.259-265
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• 2006

We measured sputtering yield of RF $O_2-plasma$ treated MgO protective layer for AC-PDP(plasma display panel) using a Focused ion Beam System(FIB). A 10 kV acceleration voltage was applied. The sputtering yield of the untreated sample and the treated sample were 0.33 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma-treatment of MgO thin film was characterized by XPS and AFM analysis. We observed that the binding energy of the O 1s spectra, the FWHM of O 1s spectra and the RMS(root-mean-square) of surface roughness decreased to 2.36 eV, 0.6167 eV and 0.32 nm, respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.241-241
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• 2015

플라즈마 건식 식각 기술은 반도체 식각공정에서 효과적으로 이용되고 있으며, 반도체 소자의 크기가 줄어듬에 따라 미세하고 정확하게 식각 깊이를 제어 할 수 있는 원자층 식각기술 많은 관심을 받고 있다. 실리콘을 대체 할 수 있는 우수한 전기적 특성을 가진 III-V 화합물 반도체 재료인 InGaAs에 대한 원자층 식각을 통하여, 흡착가스에 대한 표면흡착 및 탈착가스에 대한 표면탈착 메커니즘을 고찰하였다. 또한, 성분 및 표면분석 장치를 이용하여 InGaAs 원자층 식각 특성에 대해 연구하였다.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.5
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• pp.129-133
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• 2007

Focused Ion Beam(FIB) systems is a useful tool for the fabrication of micro-nano scale structures. In this study, the effects of FIB etching on the Au microstructure are systematically investigated. As the fabrication parameters, ion dose, dwell time and beam overlap ratio are studied. First, the increases of Ga ion dose makes the milling yield higher and the sidewall of milling profile steeper. Dwell time is found to have little effects on the milling profile due to the relatively large milling area of $1\times1{\mu}m^2$ used in this study. However, beam overlap significantly affects not only milling rate but also milling profile. As the beam overlap ratio changes from positive to negative, the development of regular cross-stripe patterns at the bottom with low milling rate is observed.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.33 no.3
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• pp.185-189
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• 2009

Focused ion beam system was designed, which includes LMIS, electrostatic lens and high voltage power supply. Control program is updated for high speed image processing. The details of vibration-free vacuum system and other important electrical parts were trouble-shooted for appropriately controlling high acceleration voltages.