• Proceedings of the KSR Conference
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• 2009.05a
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• pp.1943-1950
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• 2009

The development of high voltage Insulated Gate Bipolar Transistor (IGBT) have given new device advantage in the areas where they compete with conventional GTO (Gate Turnoff Thyristor) technology. The IGBT combines the advantages of a power MOSFET (Metal-Oxide Semiconductor Field-Effect Transistor) and a bipolar power transistor. The change of electrical characteristics for IGBT is mainly coming from the change of characteristics of MOSFET at the input gate and the PNP transistors at the output. The gate oxide structure gives the main influence on the changes in the electrical characteristics affected by environments such as radiation and temperature, etc.. The change of threshold voltage, which is one of the important design parameters, is brought by charge trapping at the gate oxide. In this paper, the electrical characteristics are simulated by SPICE simulation, and the parameters are found to design optimized circuits.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2143-2145
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• 2005

Power semicondcutor인 IGBT MOSFET, GTO, SI-Thyristor등은 높은 스위치 신뢰성과 life time, 그리고 fast repetition rate 등을 지니고 있기 때문에 medium/High voltage영역에서 스위치 사용이 대두되어 왔으나, Thyratron이나 Trigatron(Gap switch)와 비교하여 낮은 전압/전류를 스위칭하기 때문에 전통적으로 직렬연결을 통해 high voltage 영역의 스위치로 사용되어 왔다. 하지만, 직렬연결되어 있는 각각의 power semiconductor와 gate driving circuit의 on/off synchronization이 맞지 않기 때문에 부하의 급격한 변화에 따른 전압의 balance에 문제가 가장 심각하게 대두되어 왔다. 이러한 문제를 해결하기 위해서 gate driving circuit에서 제어를 해주는 방법과 power semiconductor에서 제어를 해주는 방법이 있으나 두 방식 모두 문제점이 있다. 본 논문에서는 기존의 zener clamping방식에서 벗어나 새로운 active clamping방식의 직렬연결을 제안했으며 시뮬레이션과 실험을 통해 나타난 이 결과들은 on/off transient 시 symmetry를 유지하는데 효과적이라는 것을 보여주고 있다.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1556-1558
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• 2003

IGCT devices is a superior devices for power conversion purpose. The basic structure of the IGCT devices is same as that of GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. In this paper, we present static and dynamic characteristics of 4.5 kV PT-type IGCT devices as a function of minority carrier lifetime, n-base thickness and n-buffer thickness. We should choose proper structural parameters for good electrical characteristics of GCT devices.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.777-780
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• 1993

An insulated gate bipolar transistor(IGBT) is a MOS gate turn on/off bipolar transistor which combines the attributes of the MOSFET and bipolar transistor. Because of its limitation of power capability compared to thyristor or GTO, some parallel connection of IGBT has been studied to improve the limitation of current capabillity. In this paper, the switching effects from the unbalance of internal parameters of IGBT and the turn-off snubber characteristics are investigated using SPICE program.

• KIEE International Transactions on Power Engineering
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• v.3A no.3
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• pp.148-154
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• 2003

This paper describes the development of KEPCO's 80MVA UPFC electromagnetic transient model and the analysis of its performance in the actual Korean power system. KEPCO's 80MVA UPFC is currently undergoing installation and will be ready for commercial operation from the year 2003. In order to apply a new FACTS device such as the UPFC to the actual power system, the utility needs, in advance, both load flow stability studies and transient studies. Therefore, KEPRI, the research institute of KEPCO, developed a detailed transient analysis model that is based on the actual UPFC S/W algorithm and H/W specifications. This simulation model is implemented by an EMTDC/PSCAD package. The results of the simulation show the effectiveness of UPFC operation in the KEPCO power system.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.11
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• pp.1640-1646
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• 2013

Conventional power conversion unit that is a major part of the propulsion system has applied GTO thyristor as a switching semiconductor device of main circuit since introduction of the 8200 electric locomotive. But problem that quick maintenance is difficult and its cost is increasing occurs because major components of the power conversion unit are slowly discontinued. To solve these, in this paper, it was analyzed the response characteristic of the propulsion system modeling of the 8200 electric locomotive using IGBT which is applied recently to ensure propulsion control technology. As results of response for a Propulsion system modeling, it show that a power conversion unit is controlled by PLL(Phase-locked loop) and SVPWM(Space Voltage PWM) respectively.

• JOURNAL OF ELECTRICAL WORLD
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• s.297
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• pp.66-72
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• 2001

1957년에 사이리스터가 발표된 이래 파워반도체디바이스(이하 ''파워디바이스''라 한다)의 발전과 더불어 이것을 사용하여 전력변환$\cdot$제어와 이를 응용한 파워일렉트로닉스 산업도 현저한 발전을 이루어 왔다. 21세기를 맞이하여 지구의 유한성을 강하게 인식하고 자원과 에너지를 고도이용하는 순환형 사회에로의 전환을 도모하는 기술혁신과 IT(정보기술)를 구사한 기술보급의 움직임이 활발해지고, 파워일렉트로닉스와 그 키파트인 파워디바이스가 수행하여야 할 역할은 점점 더 중요해지고 있다. 이와 같은 배경 하에서 파워디바이스는 인버터제어를 주목적으로 사이리스터, GTO(Gate Turn-off Thyristor), 바이폴라트랜지스터, MOSFET(Metal Oxide Silicon Field Effect Transistor)에서 IGBT(Insulated Gate Bipolar Transistor)에로 진전되고, 그 응용분야도 가전제품에서 OA, 산업, 의료, 전기자동차, 전철, 전력에 이르는 폭넓은 분야로 확대되었다. 현재 파워디바이스를 취급하는 전력의 범위는 수W의 스위칭 전원에서 GW급의 직류송전까지 9단위까지에 이르러 광범위한 전력 제어가 가능하게 되었다. 한편 응용의 중심이 되는 IGBT는, 고속화와 저손실화 및 파괴 내량의 향상을 지향한 개량을 거듭하여 제5세대제품이 나타나기 시작하였다. 또한 IGBT에 구동$\cdot$보호$\cdot$진단 회로 등을 넣어 모듈화한 IPM(Intelligent Power Module)이 그 편리성과 소형화를 특징으로 파워디바이스의 주역의 자리에 정착하였다. 가전$\cdot$산업$\cdot$자동차$\cdot$전철의 각 분야에서는 시장 니즈에 최적 설계된 IPM이 개발되게 되어 보다 더한 시장확대가 기대되고 있다. 또한 종래의 Si(실리콘)에 대신하는 반도체 재료로서 SiC(실리콘 카바이드 : 탄화규소)에 대한 기대가 크고 MOSFET나 SBD 등의 파워디바이스의 조기실용화에의 대처노력도 주목할 만하다.

• Journal of Energy Engineering
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• v.7 no.2
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• pp.194-201
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• 1998

In electric commuter trains using AC motors, lots of GTO thyristors and diodes are needed for power controls. These semiconductors generate heat about 1~2 kW, and for cooling which perfluorocarbon(PFC) heat pipes have been in use for the last two decades. The present study was investigated on the effects of such important design parameters as structure of internal surface (grooved or smooth), fill charge ratio, and inclinating angle from a vertical on heat transfer coefficients at both evaporators and condensers. To obtain experimental data, several heat pipes of the same geometry of 520 mm long and diameter of 15.88 mm but different in fill charge ratio and internal surface structure were designed and fabricated. For prediction of the heat transfer coefficients, related expressions were examined and the results of calculations were compared with experimental data. Performance tests were conducted while heat pipes operated at mode of thermosyphons. High enhancements of heat transfer coefficient were obtained internal grooves. In these cases, the evaporating heat transfer coefficients distributed in the range of 2~5.5 kW/$m^2$K, with an increase of heat flux from 15~45 kW/$m^2$. These experimental data were in good agreement with Rohsenow's expression based on nucleate boiling when correction factor $C_R$=1.3 was encountered. In addition, the condensation heat transfer coefficients were distributed from 1.5 to 3.5 kW/$m^2$K, and the data were in good agreements with Nusselt's correlation, based on filmwise condensation on vertical plate, when choosing a correction factor $C_N=4$. A fill charge ratio of 40~100% were recommended, and the in clination angle effects were negligible when the angle was higher then 30$^{\circ}$.