Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

Electrical Characteristics of High Voltage IGCT Devices for Rapid Electronic Railway

고속전철용 고전압 IGCT소자의 전기적 특성

  • Kim, Sang-Cheol (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
  • Seo, Kil-Soo (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
  • Kim, Hyong-Woo (Korea Electrotechnology Research Institute, Power Semiconductor Group) ;
  • Kim, Eun-Dong (Korea Electrotechnology Research Institute, Power Semiconductor Group)
  • 김상철 (한국전기연구원, 전력반도체그룹) ;
  • 서길수 (한국전기연구원, 전력반도체그룹) ;
  • 김형우 (한국전기연구원, 전력반도체그룹) ;
  • 김은동 (한국전기연구원, 전력반도체그룹)
  • Published : 2003.07.21
Download PDF
⟨ Previous Next ⟩

Abstract

IGCT devices is a superior devices for power conversion purpose. The basic structure of the IGCT devices is same as that of GTO thyristor. This makes the blocking voltage higher and controllable on-state current higher. In this paper, we present static and dynamic characteristics of 4.5 kV PT-type IGCT devices as a function of minority carrier lifetime, n-base thickness and n-buffer thickness. We should choose proper structural parameters for good electrical characteristics of GCT devices.

Keywords