• 제목/요약/키워드: GS-MBE

검색결과 3건 처리시간 0.017초

가스소스 MBE에서 원료공급량이 결정성장 기구에 미치는 영향 (The Effect of V/III Ratio on Growth Mechanism of Gas Source MBE)

  • 최성국;유진엽;정수훈;장원범;장지호
    • 한국전기전자재료학회논문지
    • /
    • 제26권6호
    • /
    • pp.446-450
    • /
    • 2013
  • Growth mechanism of GS-MBE(Gas source-Molecular Beam Epitaxy) has been investigated. We observed that the growth rate of GaN films is changing from 520 nm/h to 440 nm/h by the variation of V/III ratio under nitrogen-rich growth condition. It was explained that the amount of hydrogen on the growth front varies by the ammonia flow, and gallium hydrides are generated on the surface by a reaction of hydrogen and gallium, resultantly the amount of gallium supplying is changing along with the $NH_3$ flow. Reflection high energy electron diffraction (RHEED) observation was used to confirm the N-rich condition. The crystal quality of GaN was estimated by photoluminescence (PL) and X-ray diffraction (XRD).

가스원 분자선 에피택시 증착법에 의한 $Si/Si_{1-x}Ge_x$ MODFET 구조의 미세조직과 전기이동도에 관한 연구 (Microstructures and electron mobilities of $Si/Si_{1-x}Ge_x$ MODFET structures grown by gas-source MBE)

  • 이원재
    • 한국결정성장학회지
    • /
    • 제9권2호
    • /
    • pp.207-211
    • /
    • 1999
  • 가스원 분자선 에피택시(GS-MBE)로 성장시킨 $Si/Si_{1-x}Ge_x$ MODFET의 미세조직을 투과식 전자현미경과 간섭광학현미경을 이용하여 관찰하였다. 증착온도변화에 따른 불일치전위의 분포에 큰 변화는 없었지만, 증착온도가 높을수록 표면조도가 거칠어졌고 표면 결함이 나타났다. Si 전기활성층 근처에서는 조성경사기능층보다 전위밀도가 상당히 낮았다. 결정성장 온도를 낮춤에 따라 전기이동도는 증가하였다.

  • PDF

고지데이터 기반 기존 건축물의 용도별 에너지사용 현황분석 툴 개발 (Development of an End-use Analysis Tool for Existing Buildings Based on Energy Billing Data)

  • 공동석;박정민;장용성;이건호;허정호
    • 설비공학논문집
    • /
    • 제27권3호
    • /
    • pp.128-136
    • /
    • 2015
  • Reducing the building energy consumption has become one of the most important issues. However, the current engineering and technological involvement in energy analysis has been relatively low in the existing buildings. In the existing buildings, end-use analysis must be accompanied to calculate the exact amount in energy savings and such analysis should be conducted based on the energy billing data or measurement data by calibration process. Mostly, detailed energy simulation programs have been proposed for the analysis but, it is difficult to utilize them due to realistic problems. In this paper, we developed an end-use analysis tool that have input function for energy audit data and two case studies were conducted in the real-life office buildings located in Seoul, Korea. Mean Bias Error (MBE) and Coefficient of Variation of Root-Mean- Squreaed-Error (CV(RMSE)) are used for the criteria of comparison. Each index was calculated by using monthly utility bills of electricity and gas consumption. Results showed that MBE and CV (RMSE) represented with acceptable values of -0.1% and 5.7% respectively.