• Title/Summary/Keyword: GA4/7

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MOCVD Growth of AlGaAs/InGaAs/GaAs Pseudomorphic Structures and Transport Properties of 2DEG (AlGaAs/InGaAs/GaAs Pseudomorphic 구조의 MOCVD 성장 및 2차원 전자가스의 전송특성)

  • 양계모;서광석;최병두
    • Journal of the Korean Vacuum Society
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    • v.2 no.4
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    • pp.424-432
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    • 1993
  • AlGaAs/InGaAs/GaAs pseudomorphic structures have been grown by atmosheric pressure-MOCVD . The Al incorporation efficiency is constant but slightly exceeds the Ga incorporation during the growth of AlGaAs layers at $650^{\circ}C$ . Meanwhile , the In incorporation efficiency is constant but slightly less than the Ga incorporation in InGAAs layers. InGaAs/GaAs QWs were grown and their optical properties were characterized . $\delta$-doped Al0.24Ga0.76As/In0.16 Ga0.84As p-HEMT structures were successfully grown by MOCVD and their transport properties were characterized by Hall effect and SdH measurements. SdH Measurements at 3.7K show clear magnetoresistance oscillations and plateaus in the quantum Hall effect confirming the existence of a two-dimensional electron gas(2DEG) and a parallel conduction through the GaAs buffer layer. The fabricated $1.5\mu\textrm{m}$gatelength p-HEMTs having p-type GaAs in the buffer layer show a high transconductance of 200 mS/mm and a good pinch-off characteristics.

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Gibberellin A4 Producted by Fusarium solani Isolated from the Roots of Suaeda japonica Makino (칠면초의 뿌리로부터 분리된 Fusarium solani에 의해 생산된 지베렐린 A4)

  • Seo, Yeonggyo;You, Young-Hyun;Yoon, Hyeokjun;Kang, Sang-Mo;Kim, Hyun;Kim, Miae;Kim, Changmu;Lee, In-Jung;Kim, Jong-Guk
    • Journal of Life Science
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    • v.22 no.12
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    • pp.1718-1723
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    • 2012
  • Ten endophytic fungi with different colony morphologies were isolated from the roots of Suaeda japonica Makino growing naturally in Suncheon Bay. Plant growth promotion was verified by treating waito-c rice seedlings with culture filtrates from the endophytic fungi. The bioassays showed that the Sj/7/4 fungal strain induced effective growth promotion in the seedlings. The gibberellins (GA) produced by fungal strain Sj/7/4 were analyzed by gas chromatography /mass spectroscopy with selected ion monitoring (GC/MS SIM). The culture filtrate of Sj/7/4 fungal strain was confirmed to contain $GA_4$ through quantitative analysis. The Sj/7/4 fungal strain was identified to determine the internal transcribed spacer (ITS) regions with universal primers ITS-1 and ITS-4 by using polymerase chain reactions (PCR). Molecular analysis of the Sj/7/4 fungal strain showed high similarity to Fusarium solani. The Sj/7/4 fungal strain isolated from the root of S. japonica was therefore designated as F. solani Sj/7/4.

Luminescence characteristics of amorphous GaN quantum dots prepared by laser ablation at room temperature

  • Shim, Seung Hwan;Yoon, Jong-Won;Koshizaki, Naoto;Shim, Kwang Bo
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2003.12a
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    • pp.109-116
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    • 2003
  • Amorphous GaN Quantum dots(a-GaN QDs) with particle diameters less than bohr radius(~11nm) were successfully fabricated at room temperature by a laser ablation of high densified GaN target. Transmission electron microscopy, SAED diffraction pattern and X-ray photoelectron spectroscopy confirmed the presence of a-GaN QDs with particle size of 7.9, 6.9, 4.4nm under the Ar gas pressures of 50, 100 and 200 Pa, respectively. The room temperature PL and absorbance spectra showed a strong band emission centered at 3.9 eV in a-GaN QDs made under the gas pressures of 100 and 200 Pa, which is nearly 0.5eV blueshifted with respect to the bulk crystal band gap.

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A study on thermally stimulatede current in semi-insulating GaAs (반절연성 GaAs에서 열자극 전류에 관한 연구)

  • 배인호;김기홍;김인수;최현태;이철욱;이정열
    • Electrical & Electronic Materials
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    • v.7 no.5
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    • pp.383-388
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    • 1994
  • Deep levels in semi-insulating GaAs were observed by thermally stimulated current(TSC) measurement In the temperature ranges of 100-300K Tl(E$\_$c/-0.18eV), T2(E$\_$c/-0.20eV), T3(E$\_$c/-0.31eV), T4(E$\_$c/-0.40eV), and T5(E$\_$c/-O.43eV) traps have been observed. The TI, T2, and T5 traps seem to be related to the V$\_$As/, V$\_$Ga/-complex, and As$\_$Ga/$\^$++/ respectively. T4 trap is considered with respect to V$\_$Ga/-V$\_$As/ complex.

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Accelerated and restrained effects of gibberellic acid on the growth of Chlorella (Chlorella의 생장에 미치는 gibberellic acid의 촉진 및 억제효과)

  • 채인기;배제미;이영녹
    • Korean Journal of Microbiology
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    • v.7 no.4
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    • pp.143-152
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    • 1969
  • This investigation was proceeded to define the effects of gibberellic acid on the growth of Chlorella by determining the contents of chlorphyll and changes in various components in Chlorella cells according to the concentration of treated GA. The growth of Chlorella was accelerated with telative low concentrations of GA(10, 40 ppm) and was restrained with relative high concentrations of GA(70, 100, 200 ppm). The synthetic ability of chlorophyll of GA was inhibited generally in proportion to the concentration of treated-GA and the higher the concentration of GA was applied, the longer time was required in the restoration. The contents of RNA, protein and soluble carbohydrate were increased PCA-soluble amino acid and polysacharide were decreased in those cell components between the accelerated and restrained group. Consequently, the effect on accelerated growth in relative low concentrations of GA is considered to be caused by the powerful effet on expansion growth of GA. It is presumed that the effect of restrained growth in relative high concentrations of GA is due to the inhibitory effect on the chlorophyll synthesis.

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Effects of Some Plant Growth Regulators on Protein Biosynthesis of Carrot Cells (당근 세포의 단백질 생합성에 대한 몇가지 식물생장조절제의 영향)

  • Yoo, Ki-Jung;Park, Chang-Kyu;Song, Tae-Chul
    • Applied Biological Chemistry
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    • v.28 no.3
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    • pp.187-195
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    • 1985
  • Electrophoretic studies of protein extracts from carrot calluses suspension-cultured on the media containing kinetin, BA, IAA, NAA or $GA_3$ at the levels of $10^{-6},\;10^{-5},\;10^{-4}M$, respectively, were performed to identify polypeptides and proteins regulated by auxin, cytokinin or GA. Fifteen bands of polypeptide(s) were observed in the callus cultured in the control medium devoid of growth regulators, and their molecular weights were $18._4,\;20._2,\;20._0,\;34._9,\;35._7,\;37._4,\;40._3,\;42._2,\;44._1,\;44._4,\;49._3,\;55._0,\;56._6,\;58._1,\;and\;59._9\;KD$, respectively. The synthesis of polypeptide appeared to be promoted in two bands by kinetin, in six bands by BA, in one band by IAA, in two bands by NAA, and in four bands by $GA_3$, while inhibited in five bands by kinetin, in three bands by BA, in four bands by IAA, in three bands by NAA and in three bands by $GA_3$. The polypeptides of $40._3\;KD\;42._2\;KD$ seemed to be regulated by cytokinins, and those of $44._1\;KD,37._4\;KD,\;and\;56._6\;KD$ by auxins. The proteins of three bands with relative mobilities of 0.56, 0.84, and 0.92, respectively, increased in the calluses cultured on the media containing kinetin, IAA, $GA_3$, NAA or BA, compared to the control, but it was difficult to identify the proteins specific for each growth regulator.

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Pd/Si-based Emitter Ohmic Contacts for AlGaAs/GaAs HBTs (AlGaAs/GaAs HBT 에미터 전극용 Pd/Si계 오믹 접촉)

  • 김일호
    • Journal of the Korean Vacuum Society
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    • v.12 no.4
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    • pp.218-227
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    • 2003
  • Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au ohmic contacts to n-type InCaAs were investigated for applications to AlGaAs/GaAs HBT emitter ohmic contacts. In the Pd/Si/Ti/Pt ohmic contact, as-deposited contact showed non-ohmic behavior, and high specific contact resistivity of $5\times10^{-3}\Omega\textrm{cm}^2$ was achieved by rapid thermal annealing at $375^{\circ}C$/10 sec. However, the specific contact resistivity decreased remarkably to $2\times10^{-6}\Omega\textrm{cm}^2$ by annealing at $425^{\circ}C$/10sec. In the Pd/Si/Pd/Ti/Au ohmic contact, minimum specific contact resistivity of $3.9\times10^{-7}\Omega\textrm{cm}^2$ was achieved by annealing at $400^{\circ}C$/20sec. In both ohmic contacts, low contact resistivity and non-spiking planar interface between ohmic materials and InGaAs were maintained. Therefore, these thermally stable ohmic contact systems are promising candidates for compound semiconductor devices. RF performance of the AlGaAs/GaAs HBT was also examined by employing the Pd/Si/Ti/Pt and Pd/Si/Pd/Ti/Au systems as emitter ohmic contacts. Cutoff frequencies were 63.9 ㎓ and 74.4 ㎓, respectively, and maximum oscillation frequencies were 50.1 ㎓ and 52.5 ㎓, respectively. It shows very successful high frequency operations.

GaN Epitaxy with PA-MBE on HF Cleaned Cobalt-silicide Buffer Layer (HF 크리닝 처리한 코발트실리사이드 버퍼층 위에 PA-MBE로 성장시킨 GaN의 에피택시)

  • Ha, Jun-Seok;Chang, Ji-Ho;Song, Oh-Sung
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.2
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    • pp.409-413
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    • 2010
  • We fabricated 10 nm-thick cobalt silicide($CoSi_2$) as a buffer layer on a p-type Si(100) substrate to investigate the possibility of GaN epitaxial growth on $CoSi_2/Si(100)$ substrates. We deposited 500 nm-GaN on the cobalt silicide buffer layer at low temperature with a PA-MBE (plasma assisted-molecular beam epitaxy) after the $CoSi_2/Si$ substrates were cleaned by HF solution. An optical microscopy, AFM, TEM, and HR-XRD (high resolution X-ray diffractometer) were employed to determine the GaN epitaxy. For the GaN samples without HF cleaning, they showed no GaN epitaxial growth. For the GaN samples with HF cleaning, they showed $4\;{\mu}m$-thick GaN epitaxial growth due to surface etching of the silicide layers. Through XRD $\omega$-scan of GaN <0002> direction, we confirmed the cyrstallinity of GaN epitaxy is $2.7^{\circ}$ which is comparable with that of sapphire substrate. Our result implied that $CoSi_2/Si(100)$ substrate would be a good buffer and substrate for GaN epitaxial growth.

Optimization of gibberellin production by Fusarium prolifertum KGL0401 and its involvement in waito-c rice growth (Fusarium prolifertum KGL0401의 지베렐린 생산 최적조건과 waito-c 생장에 미치는 영향)

  • Rim, Soon-Ok;Lee, Jin-Hyung;Lee, In-Jung;Rhee, In-Koo;Kim, Jong-Guk
    • Journal of Life Science
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    • v.17 no.1 s.81
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    • pp.120-124
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    • 2007
  • Fusarium proliferatum KGL0401 was previously isolated from Physalis alkekengi var. francheti plant roots and exhibited higher GA productivity than wild type Gibberella fujikuroi. The :tim of this work was to find out an optimal culture condition for GA production. Various carbon(fructose, glucose, lactose, maltose, sucrose) and nitrogen($KNO_3$, urea, glycine, $NaNO_3,\;NH_4Cl$) sources were used for this study. GAs activities were analysed by gas chromatography and mass spectrometry(GC-MS). The highest yield of $GA_3$ was found in the growth medium supplemented with sucrose as carbon source and $NH_4Cl$ as nitrogen source. The optimum carbon-nitrogen concentration for $GA_3$ production was found to be 0.5 M:0.17 M. Supernatant was prepared from the culture fluid of F. proliferatum KGL0401 cultured for 7 days at 3 0'E and the 10 ul supernatant was treated with 2 leaf-rice seedling.

Effect of N2 flow rate on growth and photoluminescence properties of GaN nanorods grown by using molecular beam epitaxy (분자선 에피택시를 이용하여 GaN 나노로드를 성장시 구조 및 광학적인 특성에 미치는 N2의 양의 효과)

  • Park, Y.S.
    • Journal of the Korean Vacuum Society
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    • v.16 no.4
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    • pp.298-304
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    • 2007
  • We have studied the effect of $N_2$ flow rate on the structural and optical properties of GaN nanorods grown on (111) Si substrates by radio-frequency plasma-assisted molecular-beam epitaxy. The hexagonal shape nanorods with lateral diameters from 80 to 190 nm with increasing $N_2$ flow rate from 1.1 to 2.0 sccm are obtained. However, the ratio of length (thickness) and compact region increases with increasing $N_2$ flow rate up to 1.7 sccm and then saturate. From the photoluminescence, free exciton transition is clearly observed for GaN nanorods with low $N_2$ flow rate. And the PL peak energies are blue-shifted with decreasing diameter of the GaN nanorods due to size effect. Temperature-dependent photoluminescence spectra for the nanorods with $N_2$ flow rate of 1.7 sccm show an abnormal behavior like "S-shape" with increasing temperature.