• 전자통신동향분석
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• 제37권5호
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• pp.11-21
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• 2022

GaN (Gallium-Nitride) is a promising candidate material in various radio frequency applications due to its inherent properties including wide bandgap, high carrier concentration, and high electron mobility/saturation velocity. Notably, AlGaN/GaN heterostructure field effect transistor exhibits high operating voltage and high power-density/power at high frequency. In next-generation radar systems, GaN power transistors and monolithic microwave integrated circuits (MMICs) are significant components of transmitting and receiving modules. In this paper, we introduce technological trends for C-/X-/Ku-band GaN MMICs including power amplifiers, low noise amplifiers and switch MMICs, focusing on the status of GaN MMIC fabrication technology and GaN foundry service. Additionally, we review the research for the localization of C-/X-/Ku-band GaN MMICs using in-house GaN transistor and MMIC fabrication technology. We also discuss the results of C-/X-/Ku-band GaN MMICs developed at Defense Materials and Components Convergence Research Department in ETRI.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.382-383
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• 2013

Gate-controlled spin-orbit interaction parameter is a key factor for developing spin-Field Effect Transistor (Spin-FET) in a quantum well structure because the strength of the spin-orbit interaction parameter decides the spin precession angle [1]. Many researches show the control of spin-orbit interaction parameter in n-type quantum channels, however, for the complementary logic device p-type quantum channel should be also necessary. We have calculated the spin-orbit interaction parameter and the effective mass using the Shubnikov-de Haas (SdH) oscillation measurement in a GaSb two-dimensional hole gas (2DHG) structure as shown in Fig 1. The inset illustrates the device geometry. The spin-orbit interaction parameter of $1.71{\times}10^{11}$ eVm and effective mass of 0.98 $m^0$ are obtained at T=1.8 K, respectively. Fig. 2 shows the gate dependence of the spin-orbit interaction parameter and the hole concentration at 1.8 K, which indicates the spin-orbit interaction parameter increases with the carrier concentration in p-type channel. On the order hand, opposite gate dependence was found in n-type channel [1,2]. Therefore, the combined device of p- and n-type channel spin transistor would be a good candidate for the complimentary logic device.

• 한국전산유체공학회지
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• 제6권3호
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• pp.10-18
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• 2001

Genetic Algorithm(GA) is applied to aerodynamic shape optimization and demonstrated its merits in global searching ability and the independency of differentiability. However, applications of GA are limited due to slow convergence rate, premature termination, and high computing costs. The present aerodynamic designs such as wing shape optimizations using GA have seldom been applied because of high computing costs. This paper has two objects; improvement of the efficiency of GA and application of GA into aerodynamic shape optimization for 2D and 3D wings. The study indicates that GA can be applied to aerodynamic design and its performance is comparable to traditional design methods.

• Applied Science and Convergence Technology
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• 제24권6호
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• pp.242-244
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• 2015

ZnO:Ga thin films were deposited by RF magnetron sputtering technique from ZnO (3 wt.% $Ga_2O_3$) target onto glass substrates under various RF power. The influence of RF power on the structural, electrical, and optical properties of ZnO:Ga thin films was investigated by X-ray diffraction, atomic force microscopy, Hall method and optical transmission spectroscopy. As the RF power increases from 50 to 110W, the crystallinity is deteriorated, the root main square surface roughness is decreased and the sheet resistance is increased. The increase of sheet resistance is caused by decreasing carrier concentration due to interstitial Ga ion. All films are transparent up to 80% in the visible wavelength range and the adsorption edge is a red-shift with increasing RF power.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 2001년도 봄 학술발표회 논문집
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• pp.223-232
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• 2001

This paper describes Genetic Algorithm-Based Relay Search Method, RS-GA, which is developed in this study to search the multiple design variables in the design space. The RS-GA based on Simple-GA consists of some functions to search many variables from some wide variable space. It repeats a Simple-GA, that is the convergence process of the Simple-GA, which makes many time reiteration itself. From the results of the numerical studies, it was actually found that RS-GA can search all peak-variable from the 2D functions including 5 peaks. Finally, RS-GA applied for design-strengthening problems in composite plate girder bridges using the external prestressing technique is also verified.

• Applied Science and Convergence Technology
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• 제23권5호
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• pp.211-220
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• 2014

In this paper, we present a review of optical and structural studies of $GaBi_xAs_{1-x}$ epilayers grown by Molecular Beam Epitaxy (MBE) on (311)B and (001) GaAs substrates with different As fluxes. The results indicate that under near-stoichiometric conditions the bismuth incorporation is higher for samples grown on (311)B GaAs substrates than for those grown on (001) GaAs. In addition, carrier localization effects in GaBiAs layers are clearly revealed for both samples by optical measurements. The (311)B samples showed evidence of higher density of defects. It has also been found that the nonradiative centers play a significant role in the recombination process in this material system. The influence of post-growth annealing on the microstructural, optical, and magneto-optical properties was also investigated. An important improvement of optical and spin properties after thermal annealing due to the reduction of defects in the GaBiAs layers was observed.

• Applied Science and Convergence Technology
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• 제26권3호
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• pp.52-54
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• 2017

An InGaN/GaN multiple quantum well (MQW) structure is grown on a GaN/sapphire template using a plasma-assisted molecular beam epitaxy (PA-MBE). The fluctuation of the quantum well thickness formed from roughly-grown InGaN layer results in a disordered photoluminescence (PL) spectrum. The surface morphologies of the InGaN layers with various In compositions are investigated by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). A blurred InGaN/GaN hetero-interface and the non-uniform QW size is confirmed by high resolution transmission electron microscopy (HR-TEM). Inhomogeneity of the quantum confinement results in a degradation of the quantum efficiency even though the InGaN layer has a uniform In composition.

• 마이크로전자및패키징학회지
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• 제31권2호
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• pp.85-91
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• 2024

본 연구에서는 MOCVD 장비를 사용하여 c-plane sapphire 기판 위에 𝛽-Ga₂O₃ 박막을 성장시키는 방법을 조사하였다. 우리는 𝛽-Ga₂O₃ 박막의 결정성을 높이기 위한 최적의 성장 조건을 확인하였으며, 박막의 결정성에 있어 O₂와 Ga 전구체 간의 비율이 결정 성장에 미치는 영향을 확인하였다. 성장 온도의 범위는 600~1100℃ 였으며 O₂/TMGa의 비율이 800 ~ 6000일 때 결정성을 분석하였다. 결과적으로 1100℃에서 전구체 간의 몰비가 2400일 때 가장 높은 결정성의 박막을 얻을 수 있었다. 박막의 표면을 주사 전자 현미경으로 관찰하였으며, 박막의 XRD ω-스캔 시 FWHM은 (${\bar{2}}01$), (${\bar{4}}02$) 회절 피크에서 각각 1.17°, 1.43°로 나타났다. 이렇게 얻어낸 박막의 경우, 가시광선 영역에서 80% 이상의 높은 투과율을 보였으며, 박막의 밴드갭 에너지는 4.78 ~ 4.88 eV였다.

• Transactions on Electrical and Electronic Materials
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• 제18권5호
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• pp.253-256
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• 2017

A thin Te interlayer was applied to a Ni/n-InGaAs contact to reduce the contact resistance between Ni-InGaAs and n-InGaAs. A 5-nm-thick Te layer was first deposited on a Si-doped n-type $In_{0.53}Ga_{0.47}As$ layer, followed by in situ deposition of a 30-nm-thick Ni film. After the formation of the Ni-InGaAs alloy by rapid thermal annealing at $300^{\circ}C$ for 30 s, the extracted specific contact resistivity (${\rho}_c$) reduced by more than one order of magnitude from $2.86{\times}10^{-4}{\Omega}{\cdot}cm^2$ to $8.98{\times}10^{-6}{\Omega}{\cdot}cm^2$ than that of the reference sample. A thinner Ni-InGaAs alloy layer with a better morphology was obtained by the introduction of the Te layer. The improved interface morphology and the graded Ni-InGaAs layer formed at the interface were believed to be responsible for ${\rho}_c$ reduction.

• Journal of Ceramic Processing Research
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• 제13권spc1호
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• pp.128-131
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• 2012

The selective area growth light emitting diode on GaN substrate was grown using mixed-source HVPE method with multi-sliding boat system. The GaN substrate was grown using mixed-source HVPE system. Te-doped AlGaN/AlGaN/Mg-doped AlGaN/Mg-doped GaN multi-layers were grown on the GaN substrate. The appearance of epi-layers and the thickness of the DH was evaluated by SEM measurement. The DH metallization was performed by e-beam evaporator. n-type metal and p-type metal were evaporated Ti/Al and Ni/Au, respectively. At the I-V measurement, the turn-on voltage is 3 V and the differential resistance is 13 Ω. It was found that the SAG-LED grown on GaN substrate using mixed-source HVPE method with multi-sliding boat system could be applied for developing high quality LEDs.