• 한국전자파학회논문지
• /
• 제28권1호
• /
• pp.1-9
• /
• 2017

본 논문에서는 한국전자통신연구원(ETRI)에서 구축한 $0.25{\mu}m$ GaN MMIC 공정 및 소자특성을 소개하고, 이를 이용한 X-대역 3 W GaN 전력증폭기 MMIC 설계 제작 결과를 논의한다. X-대역 동작에 적합한 GaN HEMT 소자를 선정하여 GaN 전력증폭기 MMIC를 1단으로 설계하고 제작하였으며, 이를 통하여 ETRI $0.25{\mu}m$ GaN MMIC 공정 및 특성을 평가하고 분석하였다. X-대역 GaN 전력증폭기 MMIC 제작 결과, 출력전력 3.5 W, 이득 10 dB 및 전력부가효율 35 % 특성을 얻었다.

• 한국정밀공학회지
• /
• 제20권10호
• /
• pp.169-176
• /
• 2003

Genetic algorithm (GA), which has a powerful searching ability and is comparatively easy to use and also to apply, is in the spotlight in the field of the optimization for mechanical systems these days. However, it also contains some problems of slow convergence and low efficiency caused by a huge amount of repetitive computation. To improve the processing efficiency of repetitive computation, some papers have proposed paralleled GA these days. There are some cases that mention the use of gray code or suggest using gray code partially in GA to raise its slow convergence. Gray code is an encoding of numbers so that adjacent numbers have a single digit differing by 1. A binary gray code with n digits corresponds to a hamiltonian path on an n-dimensional hypercube (including direction reversals). The term gray code is open used to refer to a reflected code, or more specifically still, the binary reflected gray code. However, according to proposed reports, gray code GA has lower convergence about 10-20% comparing with binary code GA without presenting any results. This study proposes new Full gray code GA (FGGA) applying a gray code throughout all basic operation fields of GA, which has a good data processing ability to improve the slow convergence of binary code GA.

• 한국전자파학회논문지
• /
• 제27권1호
• /
• pp.76-79
• /
• 2016

본 논문에서는 ETRI에서 개발된 50 W GaN-on-SiC HEMT 소자를 이용하여 X-band에서 동작하는 50 W 펄스 전력증폭기의 개발 결과를 정리하였다. 제작된 50 W GaN HEMT 소자는 $0.25{\mu}m$의 게이트 길이를 갖고, 총 게이트 폭은 12 mm인 소자이다. 펄스 전력증폭기는 9.2~9.5 GHz 주파수 대역에서 50 W의 출력전력과 6 dB의 전력이득 특성을 나타내었다. 전력소자의 전력밀도는 4.16 W/mm이다. 제작된 GaN-on-SiC HEMT 소자와 전력증폭기는 X-대역 레이더 시스템 등 다양한 응용분야에 적용이 가능할 것으로 판단된다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.324-325
• /
• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.292-292
• /
• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.

• 한국공작기계학회논문집
• /
• 제12권3호
• /
• pp.82-88
• /
• 2003

SGA(Single Genetic Algorithm) is a heuristic global optimization method based on the natural characteristics and uses many populations and stochastic rules. Therefore SGA needs many function evaluations and takes much time for convergence. In order to solve the demerits of SGA, ${\mu}GA$(Micro-Genetic Algorithm) has recently been developed. In this study, ${\mu}GA$ which have small populations and fast convergence rate, was applied to structural optimization with discrete or integer variables such as 3, 10 and 25 bar trusses. The optimized results of ${\mu}GA$ were compared with those of SGA. Solutions of ${\mu}GA$ for structural optimization were very similar or superior to those of SGA, and faster convergence rate was obtained. From the results of examples, it is found that ${\mu}GA$ is a suitable and very efficient optimization algorithm for structural design.

• 한국공작기계학회:학술대회논문집
• /
• 한국공작기계학회 2003년도 춘계학술대회 논문집
• /
• pp.9-14
• /
• 2003

SGA (Single Genetic Algorithm) is a heuristic global optimization method based on the natural characteristics and uses many populations and stochastic rules. Therefore SGA needs many function evaluations and takes much time for convergence. In order to solve the demerits of SGA, $\mu$GA(Micro-Genetic Algorithm) has recently been developed. In this study, $\mu$GA which have small populations and fast convergence rate, was applied to structural optimization with discrete or integer variables such as 3, 10 and 25 bar trusses. The optimized results of $\mu$GA were compared with those of SGA. Solutions of $\mu$GA for structural optimization were very similar or superior to those of SGA, and faster convergence rate was obtained. From the results of examples, it is found that $\mu$GA is a suitable and very efficient optimization algorithm for structural design.

• 한국진공학회지
• /
• 제15권3호
• /
• pp.294-300
• /
• 2006

금속유기화학증착기 (metal-organic chemical vapor deposition)를 이용하여 분포귀환형 (distributed feed back) InP/InGaAs/InP 회절격자 구조를 제작하고 원자력간현미경 (atomic force microscopy)과 주사전자현미경 (scanning electron microscopy) 실험을 통해 표면 및 단면을 분석하였다. 그 위에 분자선증착기(molecular beam epitaxy)법을 이용하여 자발형성 (self-assembled) InAs/InAlGaAs 양자점 (quantum dot)을 성장하고, 광학적 특성을 온도변화 광여기 발광 (photoluminescence)으로 회절격자 구조 없이 성장한 양자점 시료와 비교 분석하였다. 회절격자의 간격 대비 폭의 비가 약 30%인 InP/InGaAs/InP 회절격자가 제작되었으며, 그 위에 성장된 양자점의 경우 상온 파장이 1605 nm에서 PL이 관찰되었다. 이는 회절격자 없이 같은 조건에서 성장된 시료의 상온 파장인 1587 nm 보다 장파장에서 발광하였으며, 회절격자의 영향으로 양자점 크기가 변하였음을 조사하였다.

• 대한방사성의약품학회지
• /
• 제2권2호
• /
• pp.118-122
• /
• 2016

Integrin ${\alpha}_v{\beta}_3$ plays an important role in the tumor metastases and angiogenesis. Arginine-glycine-aspartate (RGD) peptide motif binds to the integrin ${\alpha}_v{\beta}_3$. General $^{68}Ga$-labeled cyclic RGD peptides was rapidly eliminated from the circulatory system by renal excretion because of its hydrophilic property. The purpose of this study was to develop a novel $^{68}Ga$-labeled cyclic RGD peptides, which could acquire enhanced PET tumor images with improved pharmacokinetics by adopting biphenyl group between chelator and RGD peptides. $^{68}Ga$-DOTA-2P-c(RGDyK) was demonstrated a 12% higher lipophilicity level than $^{68}Ga$-DOTA-c(RGDyK) as a reference compound. In the animal PET, $^{68}Ga$-DOTA-2P-c(RGDyK) represented relatively lower blood-clearance, and an increased signal to noise ratio compared to $^{68}Ga$-DOTA-c(RGDyK). From these perspective, $^{68}Ga$-DOTA-2P-c(RGDyK) could be a good candidate for in integrin ${\alpha}_v{\beta}_3$-expressed tumor imaging.

• 한국진공학회지
• /
• 제22권6호
• /
• pp.313-320
• /
• 2013

실리콘(Silicon, Si) 기판과 $Al_{0.3}Ga_{0.7}As$/GaAs 다중 양자 우물(multiple quantum wells, MQWs) 간의 격자 부정합 해소를 위해 $AlAs_xSb_{1-x}$ 층이 단계 성분 변화 완충층(step-graded buffer, SGB)으로 이용되었다. $AlAs_xSb_{1-x}$ 층 상에 형성된 GaAs 층의 RMS 표면 거칠기(root-mean-square surface roughness)는 $10{\times}10{\mu}m$ 원자 힘 현미경(atomic force microscope, AFM) 이미지 상에서 약 1.7 nm로 측정되었다. $AlAs_xSb_{1-x}$/Si 기판 상에 AlAs/GaAs 단주기 초격자(short period superlattice, SPS)를 이용한 $Al_{0.3}Ga_{0.7}As$/GaAs MQWs이 형성되었다. $Al_{0.3}Ga_{0.7}As$/GaAs MQW 구조는 약 10 켈빈(Kalvin, K)에서 813 nm 부근의 매우 약한 포토루미네선스(photoluminescence, PL) 피크를 보였고, $Al_{0.3}Ga_{0.7}As$/GaAs MQW 구조의 RMS 표면 거칠기는 약 42.9 nm로 측정되었다. 전자 투과 현미경(transmission electron microscope, TEM) 단면 이미지 상에서 AlAs/GaAs SPS 로부터 $Al_{0.3}Ga_{0.7}As$/GaAs MQWs까지 격자 결함들(defects)이 관찰되었고, 이는 격자 결함들이 $Al_{0.3}Ga_{0.7}As$/GaAs MQW 구조의 표면 거칠기와 광 특성에 영향을 주었음을 보여준다.