• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.28 no.1
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• pp.1-9
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• 2017

In this paper, ETRI's $0.25{\mu}m$ GaN MMIC process is introduced and the fabricated results of X-Band 3 W power amplifier MMIC are discussed. The one-stage X-Band 3 W power amplifier MMIC using the $0.25{\mu}m$ GaN MMIC devices has been designed and fabricated. From the fabricated GaN MMIC, the characteristics of the $0.25{\mu}m$ GaN MMIC process and devices are evaluated and analyzed. The X-band power amplifier MMIC shows output power of 3.5 W, gain of 10 dB, and power-added efficiency of 35 %.

• Journal of the Korean Society for Precision Engineering
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• v.20 no.10
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• pp.169-176
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• 2003

Genetic algorithm (GA), which has a powerful searching ability and is comparatively easy to use and also to apply, is in the spotlight in the field of the optimization for mechanical systems these days. However, it also contains some problems of slow convergence and low efficiency caused by a huge amount of repetitive computation. To improve the processing efficiency of repetitive computation, some papers have proposed paralleled GA these days. There are some cases that mention the use of gray code or suggest using gray code partially in GA to raise its slow convergence. Gray code is an encoding of numbers so that adjacent numbers have a single digit differing by 1. A binary gray code with n digits corresponds to a hamiltonian path on an n-dimensional hypercube (including direction reversals). The term gray code is open used to refer to a reflected code, or more specifically still, the binary reflected gray code. However, according to proposed reports, gray code GA has lower convergence about 10-20% comparing with binary code GA without presenting any results. This study proposes new Full gray code GA (FGGA) applying a gray code throughout all basic operation fields of GA, which has a good data processing ability to improve the slow convergence of binary code GA.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.1
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• pp.76-79
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• 2016

This paper describes the successful development and the performance of X-band 50 W pulsed power amplifier using a 50 W GaN-on-SiC high electron mobility transistor. The GaN HEMT with a gate length of $0.25{\mu}m$ and a total gate width of 12 mm were fabricated. The X-band pulsed power amplifier exhibited an output power of 50 W with a power gain of 6 dB in a frequency range of 9.2~9.5 GHz. It also shows a maximum output power density of 4.16 W/mm. This 50 W GaN HEMT and X-band 50 W pulsed power amplifier are suitable for the radar systems and related applications in X-band.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.324-325
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• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.292-292
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• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.

• Transactions of the Korean Society of Machine Tool Engineers
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• v.12 no.3
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• pp.82-88
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• 2003

SGA(Single Genetic Algorithm) is a heuristic global optimization method based on the natural characteristics and uses many populations and stochastic rules. Therefore SGA needs many function evaluations and takes much time for convergence. In order to solve the demerits of SGA, ${\mu}GA$(Micro-Genetic Algorithm) has recently been developed. In this study, ${\mu}GA$ which have small populations and fast convergence rate, was applied to structural optimization with discrete or integer variables such as 3, 10 and 25 bar trusses. The optimized results of ${\mu}GA$ were compared with those of SGA. Solutions of ${\mu}GA$ for structural optimization were very similar or superior to those of SGA, and faster convergence rate was obtained. From the results of examples, it is found that ${\mu}GA$ is a suitable and very efficient optimization algorithm for structural design.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
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• 2003.04a
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• pp.9-14
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• 2003

SGA (Single Genetic Algorithm) is a heuristic global optimization method based on the natural characteristics and uses many populations and stochastic rules. Therefore SGA needs many function evaluations and takes much time for convergence. In order to solve the demerits of SGA, $\mu$GA(Micro-Genetic Algorithm) has recently been developed. In this study, $\mu$GA which have small populations and fast convergence rate, was applied to structural optimization with discrete or integer variables such as 3, 10 and 25 bar trusses. The optimized results of $\mu$GA were compared with those of SGA. Solutions of $\mu$GA for structural optimization were very similar or superior to those of SGA, and faster convergence rate was obtained. From the results of examples, it is found that $\mu$GA is a suitable and very efficient optimization algorithm for structural design.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.294-300
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• 2006

We fabricated the distributed feedback (DFB) InP/InGaAs/InP grating structures on InP (100) substrates by metal-organic chemical vapor deposition, and their structural properties were investigated by atomic force microscopy and scanning electron microscopy. Self-assembled InAs/InAlGaAs quantum dots (QDs) were grown on the InP/InGaAs/InP grating structures by molecular beam epitaxy, and their optical properties were compared with InAs/InAlGaAs QDs without grating structure. The duty of the grating structures was about 30%. The PL peak position of InAs/InAlGaAs QDs grown on the grating structure was 1605 nm, which was red-shifted by 18 nm from that of the InAs/InAlGaAs QDs without grating structure. This indicates that the formation of InAs/InAlGaAs QDs was affected by the existence of the DFB grating structures.

• Journal of Radiopharmaceuticals and Molecular Probes
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• v.2 no.2
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• pp.118-122
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• 2016

Integrin ${\alpha}_v{\beta}_3$ plays an important role in the tumor metastases and angiogenesis. Arginine-glycine-aspartate (RGD) peptide motif binds to the integrin ${\alpha}_v{\beta}_3$. General $^{68}Ga$-labeled cyclic RGD peptides was rapidly eliminated from the circulatory system by renal excretion because of its hydrophilic property. The purpose of this study was to develop a novel $^{68}Ga$-labeled cyclic RGD peptides, which could acquire enhanced PET tumor images with improved pharmacokinetics by adopting biphenyl group between chelator and RGD peptides. $^{68}Ga$-DOTA-2P-c(RGDyK) was demonstrated a 12% higher lipophilicity level than $^{68}Ga$-DOTA-c(RGDyK) as a reference compound. In the animal PET, $^{68}Ga$-DOTA-2P-c(RGDyK) represented relatively lower blood-clearance, and an increased signal to noise ratio compared to $^{68}Ga$-DOTA-c(RGDyK). From these perspective, $^{68}Ga$-DOTA-2P-c(RGDyK) could be a good candidate for in integrin ${\alpha}_v{\beta}_3$-expressed tumor imaging.

• Journal of the Korean Vacuum Society
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• v.22 no.6
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• pp.313-320
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• 2013

The $AlAs_xSb_{1-x}$ step-graded buffer (SGB) layer was grown on the Silicon (Si) substrate to overcome lattice mismatch between Si substrate and $Al_{0.3}Ga_{0.7}As$/GaAs multiple quantum wells (MQWs). The value of root-mean-square (RMS) surface roughness for 5 nm-thick GaAs grown on $AlAs_xSb_{1-x}$ step-graded buffer layer was ~1.7 nm. $Al_{0.3}Ga_{0.7}As$/GaAs MQWs with AlAs/GaAs short period superlattice (SPS) were formed on the $AlAs_xSb_{1-x}$/Si substrate. Photoluminescence (PL) peak at 10 K for the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure showed relatively low intensity at ~813 nm. The RMS surface roughness of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure was ~42.9 nm. The crystal defects were observed on the cross-sectional transmission electron microscope (TEM) images of the $Al_{0.3}Ga_{0.7}As$/GaAs MQW structure. The decrease of PL intensity and increase of RMS surface roughness would be due to the formation of the crystal defects.