• Title/Summary/Keyword: GA3

검색결과 518건 처리시간 0.03초

여성(女性)의 산증(疝症)에 대(對)한 고찰(考察)-동의보감(東醫寶鑑) 전음문(前陰門 )을 중심(中心)으로 (Investigation about symptoms named 'San(疝)')

  • 배우진;조준영;조정훈;이진무;이창훈;장준복;이경섭
    • 대한한방체열의학회지
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    • 제8권1호
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    • pp.64-69
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    • 2010
  • Purpose : This study was designed to investigate about symptoms named 'San(疝)', because almost no paper associated with San in Korea since the 1990s. Methods : Watch an overview of San with the Tonguibogam based. Results : In the Tonguibogam. according to the Zhang Ja-wha's classification. symptoms named 'San(疝)' are classified into seven kinds. As discussed in the Nephrology of Oriental Medicine, part of the Andrology, symptoms named 'San(疝)' are classified into three kinds. (1) San associated with reproductive organs. (2) San associated with pain (3) San associated with protrusion. The symptoms of San usually appears in the external genitalia and lower abdomen in both sexes can. The symptoms are called 'San(疝)' to the male and 'Ga' to the female. In the modern Obstetrics and Gynecology of Oriental Medicine. women's 'San' involves both 'San(疝)' and 'Ga'. San includes genital protrusion, but not includes vaginal hemia. It also includes genital edema, genital pruritus, genital herpes and bleeding after vaginal sex. San can be raised by many causes. The causes are damages by Coldness(傷寒), Damp-heat(濕熱), Serious distress(思慮過度) and Excessive sexual activity(房勞過多). The treatment for this symptoms is elimination of Dameum(痰飮). Jeokchwi(積聚) and Blood stasis(瘀血). Conclusion : The symptoms of San usually appears in the external genitalia and lower abdomen in both sexes can. The symptoms are called 'San(疝)' to the male and 'Ga' to the female.

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Cryopreservation of in vitro Grown Shoot Tips of Korean Potato Varieties by Droplet-vitrification

  • Ji-Won Han;Jinjoo Bae;Jae-Young Song;Ho Chul Ko;Sung-Hee Nam;Jung-ro Lee
    • 한국자원식물학회:학술대회논문집
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    • 한국자원식물학회 2023년도 임시총회 및 춘계학술대회
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    • pp.33-33
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    • 2023
  • Potatoes are the world's 4th major food crop after maize, rice, and wheat and also are a staple food for 1.3 billion people. Due to their wide adaptability to various environmental conditions, their yeild capacity, and high commercial value, potatoes have contributed to global food security. Many potato germplasms are commonly preserved as whole plants in fields or in storage to maintain their particular genetic combinations. However, field maintenance is expensive and has the risk of potential losses from diseases, pests, plant ageing and climate change. Over the past four decades, meaningful efforts have been made toward the safe long-term conservation of potatoes through cryopreservation methods such as droplet-vitrification. In this study, we tested 4 Korean potato varieties('Golden Egg', 'Golden Ball', 'Ja-Young' and 'Ha-Ryeong') with the modified potato droplet -vitrification protocol. Potato shoot tips are precultured in a sucrose-enriched medium(0.3 and 0.7M for 7 and 17hrs, respectively) and submitted to a loading step with C4 solution for osmoprotection. The treated explants were dehydrated with Plant Vitrification Solution(PVS)2 which is 80% A3 solution in ice for 30 minutes. Thawing and unloading steps were performed with 0.8M sucrose solution for 30 sec(40℃) followed by 30min(25℃, room temperature). In a potato post-culture medium(MS+0.1 mg·L-1 GA3+0.1 mg·L-1 kinetin), we obtained a survival rates of post-thawed explants ranging 16.1-82.2%. The results suggest that modified and optimized protocols are required dependinig on every cultivar, genetic and ecological types. To achieve higher survival and regeneration rates, each step within the cryoprocedure must be carefully optimized.

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GA3 처리에 의한 인삼 재분화 식물체의 토양 순화 (Soil Acclimatization of Regenerated Plants by Gibberellic Acid Treatments of Panax ginseng C. A. Meyer)

  • 김영창;박홍우;김옥태;방경환;김장욱;현동윤;김동휘;차선우;최재을
    • 한국자원식물학회지
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    • 제26권1호
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    • pp.84-89
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    • 2013
  • 본 연구는 인삼 기내에서 생산된 재분화 식물체의 토양 순화를 위해 순화과정을 단축하고 생존율을 높일 수 있는 방법을 개발하기 위하여 실시하였다. $GA_3$$0.4mg\;l^{-1}$로 9시간을 처리하였을 때 토양에서 생존율은 59.6%로 가장 높게 나타났으며, 그 다음이 $1mg\;l^{-1}$에서 9시간을 처리하였 때 43.7%의 생존율을 나타냈다. 재분화 식물체의 뿌리길이가 4 cm 이상일 때는 48개체가 생존하여 생존율은 53.3%로 처리 중 가장 높게 나타났으며, 뿌리 무게는 4 g 이상일때는 46.7%가 생존하여 가장 높은 비율을 나타냈다. 4년생 때 지상부 생육 특성을 조사한 결과, 초장은 35.3 cm, 경장은 18.3 cm, 엽장은 12.1 cm, 엽폭은 4.8 cm로 이식 재배한 연풍의 생육 특성과 비교해 보면 재분화 식물체의 생육이 약간 떨어짐을 볼 수 있었다. 3년생 때 지하부 특성을 보면 근장은 15.3 cm, 동장은 4.5 cm, 동직경은 2.1 cm, 그리고 근중은 15.4 g으로 지하부도 지상부와 마찬가지로 대조구인 묘삼을 이식하여 재배한 처리구에 비하여 생육이 약간 떨어졌다.

산소플라즈마 전처리된 Polyethylene Naphthalate 기판 위에 증착된 ZnO:Ga 투명전도막의 특성 (Properties of ZnO:Ga Transparent Conducting Film Fabricated on O2 Plasma-Treated Polyethylene Naphthalate Substrate)

  • 김병국;김정연;오병진;임동건;박재환;우덕현;권순용
    • 한국재료학회지
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    • 제20권4호
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    • pp.175-180
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    • 2010
  • Transparent conducting oxide (TCO) films are widely used for optoelectronic applications. Among TCO materials, zinc oxide (ZnO) has been studied extensively for its high optical transmission and electrical conduction. In this study, the effects of $O_2$ plasma pretreatment on the properties of Ga-doped ZnO films (GZO) on polyethylene naphthalate (PEN) substrate were studied. The $O_2$ plasma pretreatment process was used instead of conventional oxide buffer layers. The $O_2$ plasma treatment process has several merits compared with the oxide buffer layer treatment, especially on a mass production scale. In this process, an additional sputtering system for oxide composition is not needed and the plasma treatment process is easily adopted as an in-line process. GZO films were fabricated by RF magnetron sputtering process. To improve surface energy and adhesion between the PEN substrate and the GZO film, the $O_2$ plasma pre-treatment process was used prior to GZO sputtering. As the RF power and the treatment time increased, the contact angle decreased and the RMS surface roughness increased significantly. It is believed that the surface energy and adhesive force of the polymer surfaces increased with the $O_2$ plasma treatment and that the crystallinity and grain size of the GZO films increased. When the RF power was 100W and the treatment time was 120 sec in the $O_2$ plasma pretreatment process, the resistivity of the GZO films on the PEN substrate was $1.05\;{\times}\;10^{-3}{\Omega}-cm$, which is an appropriate range for most optoelectronic applications.

Terahertz Time Domain Spectroscopy, T-Ray Imaging and Wireless Data Transfer Technologies

  • Paek, Mun-Cheol;Kwak, Min-Hwan;Kang, Seung-Beom;Kim, Sung-Il;Ryu, Han-Cheol;Choi, Sang-Kuk;Jeong, Se-Young;Kang, Dae-Won;Jun, Dong-Suk;Kang, Kwang-Yong
    • Journal of electromagnetic engineering and science
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    • 제10권3호
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    • pp.158-165
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    • 2010
  • This study reviewed terahertz technologies of time domain spectroscopy, T-ray imaging, and high rate wireless data transfer. The main topics of the terahertz research area were investigation of materials and package modules for terahertz wave generation and detection, and setup of the terahertz system for time domain spectroscopy(TDS), T-ray imaging and sub-THz wireless communication. In addition to Poly-GaAs film as a photoconductive switching antenna material, a table-top scale for the THz-TDS/imaging system and terahertz continuous wave(CW) generation systems for sub-THz data transfer and narrow band T-ray imaging were designed. Dielectric properties of ferroelectric BSTO($Ba_xSr_{1-x}TiO_3$) films and chalcogenide glass systems were characterized with the THz-TDS system at the THz frequency range. Package modules for terahertz wave transmitter/receiver(Tx/Rx) photoconductive antenna were developed.

Efficient Micropropagation of Pear Germplasm Using Soot Tips and Nodal Explants

  • Yi, JungYoon;Lee, GiAn;Chung, JongWook;Lee, YoungYi;Gwag, JaeGyun;Lee, SeokYoung
    • 한국자원식물학회지
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    • 제28권6호
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    • pp.690-696
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    • 2015
  • We micropropagated pear (Pyrus species) using shoot tips and nodal explants from three pear genotypes. The ability to establish shoot tip cultures, proliferate shoots, induce rooting, and acclimatize the resulting plantlets are all elements of in vitro micropropagation. Shoots were induced from shoot tips on Murashige and Skoog medium (MS) with five different plant growth regulator combinations. The highest shoot formation rates were achieved for the three genotypes using MS supplemented with 1.0 mg/L N6-benzyladenine (BA) and 0.1 mg/L gibberellic acid (GA3). The maximum shoot number and shoot length for the three cultivars were recorded with 2.0 mg/L BA and 0.2 mg/L indole-3-butyric acid (IBA) in multiplication medium using nodal explants produced from microshoots. Nodal explants with one or two axillary buds cultured for three weeks initiated roots on medium supplemented with various concentrations of 1-naphthaleneacetic acid (NAA) or/and IBA in half-strength MS medium for adventitious rooting. The highest rooting response was with the combination of 0.2 mg/L NAA and 0.2 mg/L IBA. A combination of NAA and IBA resulted in a significant increase in the rooting ratio over NAA or IBA alone. In this medium, the root formation rate according to ranged from 68.9% for the BaeYun No. 3 genotype to 51.8% for the Hwanggeum genotype. We also investigated the influence of the concentration the polyamine phloroglucinol in rooting medium. For all three genotypes, the highest rooting ratio, longest root length, and greatest root number were observed in the treatments with 75-150 mg/L phloroglucinol. Most rooted plants were acclimatized successfully.

mm-wave용 전력 PHEMT제작 및 특성 연구 (Studies on the Fabrication and Characteristics of PHEMT for mm-wave)

  • 이성대;채연식;윤관기;이응호;이진구
    • 대한전자공학회논문지SD
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    • 제38권6호
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    • pp.383-389
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    • 2001
  • 본 논문에서는 밀리미터파 대역에서 응용 가능한 AIGaAs/InGaAs PHEMT를 제작하고 특성을 분석하였다. 제작에 사용된 PHEMT 웨이퍼는 ATLAS 시뮬레이터를 이용하여 DC 및 RF 특성을 최적화 하였다. 게이트 길이가 0.35 ㎛이고 서로 다른 게이트 폭과 게이트 핑거 수를 갖는 PHEMT를 전자빔 노광장치를 이용하여 제작하였다. 제작된 소자의 게이트 길이와 핑거수에 따른 RF 특성변화를 측정 분석하였다. 게이트 핑거 수가 2개인 PHEMT의 DC 특성으로 1.2 V의 무릎 전압, -1.5 V의 핀치-오프 전압, 275 ㎃/㎜의 드레인 전류 밀도 및 260.17 ㎳/㎜의 최대 전달컨덕턴스를 얻었다. 또한 RF 특성으로 35 ㎓에서 3.6 ㏈의 S/sub 21/ 이득, 11.15 ㏈의 MAG와 약 45 ㎓의 전류 이득 차단 주파수 그리고 약 100 ㎓의 최대 공진주파수를 얻었다.

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유기금속화학기상증착법을 이용한 적층 InAs 양자점 적외선 수광소자 성장 및 특성 평가 연구 (Study of Multi-stacked InAs Quantum Dot Infrared Photodetectors Grown by Metal Organic Chemical Vapor Deposition)

  • 김정섭;하승규;양창재;이재열;박세훈;최원준;윤의준
    • 한국진공학회지
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    • 제19권3호
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    • pp.217-223
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    • 2010
  • 유기금속화학기상증착법으로 적층 InAs/$In_{0.1}Ga_{0.9}As$ DWELL (dot-in-a-well) 구조를 성장하여 n-i-n 구조의 적외선 수광소자를 제작하였으며, PL (photoluminescence) 발광 특성 및 암전류 특성을 분석하였다. 동일한 조건으로 양자점을 적층하였을 때 크기 및 밀도의 변화에 의한 이중 PL peak을 관찰하였으며, TMIn의 유량을 조절함으로써 단일 peak을 갖는 균일한 크기의 양자점 적층 구조를 성장할 수 있었다. 적외선 수광소자 구조를 성장함에 있어서, 상부의 n-형 GaAs의 성장 온도가 600도 이상인 경우 PL 발광 세기가 급격히 감소하였고 이에 따른 암전류의 증가를 관찰하였다. 0.5 V 인가 전압에서 암전류의 온도 의존성에 대한 활성화 에너지의 크기는 성장온도가 580도인 경우 106 meV이고, 650도의 경우는 48 meV로 급격이 낮아졌다. 이는 고온의 성장 온도에 의한 InAs 양자점과 $In_{0.1}Ga_{0.9}As$ 양자우물구조 계면에서의 열적 상호 확산에 의하여 비발광 천이가 증가되었기 때문이다.

Hot Wall Epitaxy(HWE)법에 의한 CuAlSe2 단결정 박막의 성장과 가전자대 갈라짐에 대한 광전류 연구 (Photocurrent Study on the Splitting of the Valence Band and Growth of CuAlSe2 Single Crystal Thin Film by Hot Wall Epitaxy)

  • 박창선;홍광준;박진성;이봉주;정준우;방진주;김현
    • 센서학회지
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    • 제13권2호
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    • pp.157-167
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    • 2004
  • A stoichiometric mixture of evaporating materials for $CuAlSe_{2}$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_{2}$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_{2}$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}cm^{-3}$ and $295cm^{2}/V{\codt}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$ = 2.8382 eV - ($8.68{\circ}10^{-4}$ eV/K)$T^{2}$/(T + 155 K). The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_{2}$ have been estimated to be 0.2026 eV and 0.2165 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $CuAlSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1-}$, $B_{1-}$, and $C_{1-}$ exciton peaks for n = 1.

파프리카 생산성 차이 농가 간 지상부 환경요인 비교 (Comparison of Atmospheric Environmental Factors between Farms with Difference in Paprika Productivity)

  • 김가영;우승미;김호철
    • 문화기술의 융합
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    • 제7권4호
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    • pp.785-789
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    • 2021
  • 파프리카 생산성은 동일한 품질 온실, 지역 간에 차이를 나타내고 있다. 이러한 차이는 다양한 환경요인의 차이에서 오는 것으로 알려져 있다. 본 연구는 동일 지역에서 동일 품질 온실 중에서 생산성이 높거나(HPF) 낮은(LPF) 온실 간 내부 환경요인의 수준 차이를 알아보고자 수행되었다. 주요 환경요인들의 일 또는 주의 평균값에서 두 온실 간에 가장 큰 차이를 보인 것은 CO2 농도였지만, LPF에서 HPF보다 매우 높아 생산성 차이 요인으로 판정하기 않았다. 14개 환경 요인들 간 상관분석에서 광량과 수분 관련 요인들 간에 상관성을 나타내었다. 증산량에 관련된 수증기압포차와 상대습도 간 선형회귀모형의 회귀계수는 HPF에서 -0.0202kpa, LPF에서는 -0.0262kpa로 나타났다. 특히 2월과 3월에는 LPF에서 VPD가 1.5kpa 이상이었고, 재배 초기에 누적 광량 대비 누적 수증기압포차의 급격한 증가가 나타났다. 따라서 LPF에서 생산성이 낮은 원인은 재배 초기와 겨울철에 적은 광량 조건에서 높은 VPD에 의한 높은 증산량이 식물체에게 수분 스트레스를 주었기 때문으로 판단된다.