• Korean Journal of Optics and Photonics
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• v.13 no.4
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• pp.319-323
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• 2002

1.55 ${\mu}m$multi-quantum well (MQW) broad area laser diodes with different linewidth enhancement factors ($\alpha{-factor}$) of 2 and 4 were fabricated. The far-fields of the laser diodes were measured. It was observed that the full width at half maximum (FWHM) of the far-fields and the filamentations were reduced in the laser diodes for which the value of the $\alpha{-factor}$ was small. As injection current increased, the FWHM of the far-field also increased regardless of the a-factor. This phenomenon was explained by reduction of filament spacing as injection current increased.

• Progress in Superconductivity and Cryogenics
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• v.5 no.3
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• pp.20-22
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• 2003

Y$_2$O$_3$ films were pulsed laser deposited on cube textured Ni and Ni-W substrates to be used as a single buffer layer of YBCO coated conductor. Initial deposition of $Y_2$O$_3$ films was performed in a reducing atmosphere, and subsequent deposition was done in the base pressure of the chamber and oxygen atmosphere. The $Y_2$O$_3$ films have a strong cube texture (The full width at half maximum of the ø-scan of $Y_2$O$_3$ was 8.4 which was the same as that of metal substrate) and smooth crack-free microstructure. The biaxially textured YBCO films (The full width at half maximum of the ø-scan was 10.2) pulsed laser deposited on the $Y_2$O$_3$/metal exhibited Tc(R=0) of 86.5K and Jc of 0.7 MA/cm2 at 77K in self field, representing that the $Y_2$O$_3$ single buffer layer is an efficient diffusion barrier of Ni and thus very promising for the achievement of high-Jc YBCO coated conductor.

• Journal of the Korean Vacuum Society
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• v.11 no.2
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• pp.97-102
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• 2002

Highly-oriented ZnO thin films has been successfully deposited on Si(100) by metal organic chemical vapor deposition(MOCVD) at $250^{\circ}C$~$400^{\circ}C$ We report on the structural properties of ZnO thin film at various temperatures and at various ratios of the he and $O_2$ gas flow rates. The crystallinity of the thin films was improved and the surface smoothness decreased with the increase of the growth temperature. In x-ray diffraction analysis with respect to ZnO(0002) peak, the full width at half maximum (FWHM) of $0.4^{\circ}$ was achieved at $400^{\circ}C$.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.165-171
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• 1997

If the thickness of Pd deposited is larger than 9$\AA$, its phase is $Pd_3Si$. This phase is followed by pure Pd phase with further deposition of Pd. Also, when the thickness of Pd deposited on top of Si(111) is larger than 1$\AA$, the phase of Pd-silicide formed is found to be Pd2Si. The full width at half maximum of Pd 3d core-levels increases with decreasing of Pd film thickness at low coverages ($\leq0.5\AA$). This is due to the formation of additional phase of Pd silicide, i.e. PdSi, in addition to $Pd_2Si$.

• Nuclear Engineering and Technology
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• v.56 no.4
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• pp.1165-1203
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• 2024

In the paper we validate theoretical models of the pulse against experimental data from the Jozef Stefan Institute TRIGA Mark II research reactor. Data from all pulse experiments since 1991 have been collected, analysed and are publicly available. This paper summarizes the validation study, which is focused on the comparison between experimental values, theoretical predictions (Fuchs-Hansen and Nordheim-Fuchs models) and calculation using computational program Improved Pulse Model. The results show that the theoretical models predicts higher maximum power but lower total released energy, full width at half maximum and the time when the maximum power is reached is shorter, compared to Improved Pulse Model. We evaluate the uncertainties in pulse physical parameters (maximum power, total released energy and full width at half maximum) due to uncertainties in reactor physical parameters (inserted reactivity, delayed neutron fraction, prompt neutron lifetime and effective temperature reactivity coefficient of fuel). It is found that taking into account overestimated correlation of reactor physical parameters does not significantly affect the estimated uncertainties of pulse physical parameters. The relative uncertainties of pulse physical parameters decrease with increasing inserted reactivity. If all reactor physical parameters feature an uncorrelated uncertainty of 10 % the estimated total uncertainty in peak pulse power at 3 $ inserted reactivity is 59 %, where significant contributions come from uncertainties in prompt neutron lifetime and effective temperature reactivity coefficient of fuel. In addition we analyse contribution of two physical mechanisms (Doppler broadening of resonances and neutron spectrum shift) that contribute to the temperature reactivity coefficient of fuel. The Doppler effect contributes around 30 %-15 % while the rest is due to the thermal spectrum hardening for a temperature range between 300 K and 800 K.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.4
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• pp.7-11
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• 2006

In this paper, it is reported that film-bulk-acoustic resonator with high c-axis oriented AIN film on $Mo/SiO_2/Si(100)$ using metal-organic-chemical-vapor deposition was fabricated. The resonant frequency and anti-resonant frequency of the fabricated resonator were observed with 3.189[GHz] and 3.224[GHz], respectively. The quality factor and the effective electromechanical coupling coefficient(${k_{eff}}^2$) were measured with 24.7 and 2.65[%], respectively. The conditions of AIN deposition were substrate temperature of $950[^{\circ}C]$, pressure of 20Torr, and V-III ratio of 25000. A high c-axis oriented AIN film with $4{\times}10^{-5}[\Omega{cm}]$ resistivity of Mo bottom electrode and $4[^{\circ}]$ of AIN(0002) full-width at half-maximum(FWHM) on $Mo/SiO_2/Si(100)$ was grown successfully. The FWHM value of deposited AIN film is useful for the RF band pass filter specification for GHz-band wireless local area network.

• Journal of information and communication convergence engineering
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• v.7 no.4
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• pp.545-550
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• 2009

A method fully utilizing multiscale line filter responses is presented to estimate the point spread function(PSF) of a CT scanner and diameters of small tubular structures based on the PSF. The estimation problem is formulated as a least square fitting of a sequence of multiscale responses obtained at each medical axis point to the precomputed multiscale response curve for the ideal line model. The method was validated through phantom experiments and demonstrated through phantom experiments and demonstrated to accurately measure small-diameter structures which are significantly overestimated by conventional methods based on the full width half maximum(FWHM) and zero-crossing edge detection.

• The Journal of Natural Sciences
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• v.11 no.1
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• pp.27-31
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• 1999

The Raman scattering was studied from the porous silicons which were made by changing anodization current and time. As the current density was increased, it was observed that Raman peak was red shift and the full width half maximum increased, and was analyzed theoretically.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.23 no.5
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• pp.621-627
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• 1999

This paper presents Raman scattering of liquid water to obtain the characteristics with variation of temperature. Very clear Stokes-Raman signals were observed, which shows H-O vibration stretching and H-O-H vibration bending. The obtained spectrum were processed by FFT filter to extract the noise and base. The spectral shape of the H-O stretching provided a various sensitive signature which allowed temperature to be determined by a curve-fitting technique. Those are Maximum Intensity, Maximum Wave Length, FWHM(Full Width at Half Maximum), PMCR(Polymer Monomer Concentration Ratio) and TSIR(Temperature Sensitive Intensity Ratio). TSIR method shows the highest accuracy of $0.1^{\circ}C$ in mean error and $0.32^{\circ}C$ In maximum error.

• Journal of the Korean Ceramic Society
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• v.40 no.5
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• pp.423-427
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• 2003

Effect of the thermal poling on the 1.55 fm emission spectra in various Er$^{3+}$ -doped glasses was investigated with a special attention on the changes in the values of FWHM(Full Width at Half Maximum) intensity. Tellurite glasses poled at 28$0^{\circ}C$ with an electric voltage of 4 kV resulted in an approximately 6% increase in FWHM values compared with their unpoled counterparts. On the other hand, values for glasses, such as aluminosilicate, sulfide and chalcohalide, either decreased or remained unchanged. The characteristic results from tellurite glasses are most probably due to the presence of lone-pair electrons in the TeO$_4$ hi-pyramidal units that form the main network structure of tellurite glasses.