The Journal of Natural Sciences (자연과학논문집)
- Volume 11 Issue 1
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- Pages.27-31
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- 1999
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- 1225-6196(pISSN)
Analysis of Porous Silicon Size in Raman Scattering
라만 산란에서 다공질 규소의 크기 분석
- Cho, Chang-Ho (Dept. of Physics, Pai Chai University) ;
- Seo, Young-Seok (Dept. of Physics, Pai Chai University)
- Published : 1999.02.28
Abstract
The Raman scattering was studied from the porous silicons which were made by changing anodization current and time. As the current density was increased, it was observed that Raman peak was red shift and the full width half maximum increased, and was analyzed theoretically.
양극반응 전류밀도와 전류가 흐르는 시간을 변화시키면서 다공질 규소를 제작하여 라만 산란을 관측하였다. 전류밀도가 증가함에 따라 라만 신호의 봉우리가 이동되었고, 반치폭이 증가함을 실험적으로 관측하여 이론적 모델로서 분석하였다.