• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.323-325
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• 1997

Conventionally it is asummed that the microstrip line conductor has a rectangular cross-section. but the additive and substactive processes used to create conductors for PCBs produce a conductor of approximately Trapezoidal cross-section. For wide Strip line, the thickness and edge effect will be small since most of capacitance is parallel plate rather than fringing and we can ignore the cross-section. For narrow strip lines, the edge effect become immportant. So in this paper, we measure the chracteristic impedance of microstripline by Vector Analyzer and simulate the electromagnetic field of microstripline using finite element method with edge angle.

• Journal of Advanced Navigation Technology
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• v.17 no.6
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• pp.720-725
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• 2013

This paper has presented that fringing-electric fields enhanced by a finger-type electrode can improve the tunability of the tunable capacitor. Its top electrodes with different area and line width are designed in types of the finger for a long conducting perimeter. The tunable varactors were fabricated on a quartz substrate employing a multi-layer dielectric of a para/ferro/para-electric thin film. Compared to the conventional capacitor, finger-type capacitors are analyzed in terms of effective capacitance and tunablility. Their effective capacitance and tunability of the varactors with the long perimeter increase 24~40 % and 7~12 %, respectively, due to enhanced fringing electric fields from 1 to 2.5 GHz.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.127-129
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• 1996

A 3-dimensional analysis is desired for a magnet of magnetically levitated vehicle because the geometrical shape of the magnet is complicated and nonsymmetric. A FEM package of FLUX3D is used to analyze the characteristic of the magnet. Various quantities could be observed like levitation force, flux density distribution along the air gap, edge and fringing effect, leakage flux pattern, etc. The simulation results from FLUX3D are compared with those of 2-D analysis and test results. There are a little difference between results due to the boundary conditions and magnetized B-H curve of the core.

• Proceedings of the KIEE Conference
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• 2011.07a
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• pp.1043-1044
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• 2011

This paper discusses the electromagnetic and mechanical design considerations to improve the design accuracy and power to mass ratio of multi-stack axial flux permanent magnet synchronous generator (AFPMSG). Design accuracy of multi-stack AFPMSG for direct drive wind turbine application is improved by considering magnetic flux leakages and fringing effect. FEM structural analysis is utilized to increase power to mass ratio of three-stack AFPMSG by reducing the rotor yoke thickness considering magnetic and centrifugal forces and Von Mises stress distribution.

• Electrical & Electronic Materials
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• v.9 no.8
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• pp.783-788
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• 1996

In this paper, the high-$T_c$ , superconductor (HTS) microstrip patch antenna which is directly coupled to a microstrip transmission line is designed and the numerical solution which evaluate near electromagnetic field of HTS antenna is presented. This solution uses the interpolation function with the vector edge triangular element. The advantage of this element is the elimination of spurious solutions attributed to the lack of enforcement of the divergence condition. The results of this method have a good agreement with $TM_10$ mode in HTS microstrip patch antenna and show that the computation of resonant length considering the fringing capacitance effect at radiating edge are proper.

• Speech Sciences
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• v.12 no.4
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• pp.17-29
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• 2005

Time-frequency representation reveals some useful information about instantaneous frequency, instantaneous bandwidth and boundary of each AM-FM component of a speech signal. In many cases, the instantaneous frequency of each component is not constant. The variability of instantaneous frequency causes degradation of resolution in time-frequency representation. This paper presents a method of adaptively adjusting the transform kernel for preventing degradation of resolution due to time-varying instantaneous frequency. The transform kernel is the form of frequency modulated function. The modulation function in the transform kernel is determined by the estimate of instantaneous frequency which is approximated by first order polynomial at each time instance. Also, the window function is modulated by the estimated instantaneous. frequency for mitigation of fringing. effect. In the proposed method, not only the transform kernel but also the shape and the length of. the window function are adaptively adjusted by the instantaneous frequency of a speech signal.

• Journal of the Institute of Electronics and Information Engineers
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• v.53 no.8
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• pp.76-82
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• 2016

In this paper, we evaluated shielding effectiveness (SE) of carbon nanotube (CNT) film using near field scanning (NFS) in near field analysis. We adopted CNT film with deposit carbon density of 5% and thickness of 1mm for evaluation of shielding characteristic. Using a test coupon analogized to an actual IC package, we measured SE according to measuring position and SE according to distances between the CNT film and the test coupon. As a result, the measured SE in the near field varied with frequency. Especially, the measured electric field SE in the center of the test coupon is better than that of the measured edge point of the test coupon where it is affected by fringing effect. The results show that the measured SE in the near field is affected not only by frequency but also by measurement environment such as position and height of the probe and height of shielding film. In conclusion, we should choose proper methods for SE measurement considering interference distance in the electronic control system because there is little correlation between the proposed evaluation method in the near field and ASTM D 4935-10.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.49 no.6
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• pp.48-56
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• 2012

Radiation characteristics of inductive loaded patch antennas (ILPAs) and conventional patch antennas using a half wavelength resonance mode for substrates with various dielectric constants are investigated. ILPAs have the good radiation characteristics such as high broadside gain and suppressed radiation along the horizontal plane compared to those of conventional patch antennas. We show that ILPAs with the appropriate patch length and via radius have the optimum radiation characteristics such as the highest broadside gain and the most suppressed horizontal radiation.

• JSTS:Journal of Semiconductor Technology and Science
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• v.16 no.2
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• pp.172-178
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• 2016

In this paper, we propose a sub-10 nm Ge/GaAs heterojunction-based tunneling field-effect transistor (TFET) with vertical band-to-band tunneling (BBT) operation for ultra-low-power (LP) applications. We design a stack structure that is based on the Ge/GaAs heterojunction to realize the vertical BBT operation. The use of vertical BBT operations in devices results in excellent subthreshold characteristics with a reduction in the drain-induced barrier thinning (DIBT) phenomenon. The proposed device with a channel length ($L_{ch}$) of 5 nm exhibits outstanding LP performance with a subthreshold swing (S) of 29.1 mV/dec and an off-state current ($I_{off}$) of $1.12{\times}10^{-11}A/{\mu}m$. In addition, the use of the highk spacer dielectric $HfO_2$ improves the on-state current ($I_{on}$) with an intrinsic delay time (${\tau}$) because of a higher fringing field. We demonstrate a sub-10 nm LP switching device that realizes a good S and lower $I_{off}$ at a lower supply voltage ($V_{DD}$) of 0.2 V.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.1
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• pp.16-20
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• 2020

In this study, a patterning method using self-aligned nanostructures was introduced to fabricate GaN-based fin-gate HEMTs with normally-off operation, as opposed to high-cost, low-productivity e-beam lithography. The honeycomb-shaped fin-gate channel width is approximately 40~50 nm, which is manufactured with a fine width using a proposed method to obtain sufficient fringing field effect. As a result, the threshold voltage of the fabricated device is 0.6 V, and the maximum normalized drain current and transconductance of Gm are 136.4 mA/mm and 99.4 mS/mm, respectively. The fabricated devices exhibit a smaller sub-threshold swing and higher Gm peak compared to conventional planar devices, due to the fin structure of the honeycomb channel.