• Title/Summary/Keyword: Frequency tuning

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Hydrodynamic Characteristics of Two-dimensional Wave-energy Absorbers (이차원(二次元) 부유식(浮游式) 파랑발전기(波浪發電器)의 유체역학적(流體力學的) 특성(特性))

  • Moo-Hyun,Kim;H.S.,Choi
    • Bulletin of the Society of Naval Architects of Korea
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    • v.20 no.1
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    • pp.47-58
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    • 1983
  • A study is made, in the framework of linear potential theory, to investigate the hydrodynamic characteristics of two-dimensional wave-energy absorbers as like the Salter's duck and an oscillating cam with Lewis-form section, which undergo uncoupled heaving and rolling motions in an incident linear gravity wave in deep water. Wave energy is supposed to be extracted by a linearly damped generator with an spring. Some well-known formulae in ship hydrodynamics such as Haskind-Newman relation and Bessho-Newman relation are utilized in forms of Kochin functions to derived expressions for efficiency, breaking effect and drift force of the absorber. Maximum ideal efficiency of 100% can be arrived at an prescribed tuning frequency. Coupling effect is also examined to assess the detrimental effect of sway on efficiency. From numerical calculations for both types of two-dimensional devices it may be concluded that a wave-energy absorber functions at the same time as a wave breaker and that the drift force acting on the device becomes smaller when it absorbs wave energy than as it oscillates freely. Finally the study is extended to an infinite array system, equivalent to a body in a canal, to show that all incident wave energy can be absorbed regardless of the absorber's size, only if the optimum space and the optimum condition of control are realized.

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LC VCO using dual metal inductor in $0.18{\mu}m$ mixed signal CMOS process

  • Choi, Min-Seok;Jung, Young-Ho;Shin, Hyung-Cheol
    • Proceedings of the IEEK Conference
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    • 2006.06a
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    • pp.503-504
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    • 2006
  • This paper presents the design and fabrication of a LC voltage-controlled oscillator (VCO) using 1-poly 6-metal mixed signal CMOS process. To obtain the high-quality factor inductor in LC resonator, patterned-ground shields (PGS) is placed under the symmetric inductor to reduce the effect from image current of resistive Si substrate. Moreover, due to the incapability of using thick top metal layer of which the thickness is over $2{\mu}m$, as used in many RF CMOS process, the structure of dual-metal layer in which we make electrically short circuit between the top metal and the next metal below it by a great number of via materials along the metal traces is adopted. The circuit operated from 2.63 GHz to 3.09 GHz tuned by accumulation-mode MOS varactor. The corresponding tuning range was 460 MHz. The measured phase noise was -115 dBc/Hz @ 1MHz offset at 2.63 GHz carrier frequency and the current consumption and the corresponding power consumption were about 2.6 mA and 4.68 mW respectively.

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New Harmonic Suppressed Microstirp Ring Bandpass Filters

  • Park, Hyun-Joo;Kim, Jae-Hyuk;Park, Ji-Yong;Lee, Jong-Chu;Kim, Jong-Heon;Lee, Byung-Je;Kim, Nam-Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.5
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    • pp.697-706
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    • 2000
  • In this paper, new bandpass filters that are composed of microstrip ring resonators with the center frequency of 5.775 GHz and the bandwidth of 100 MHz are presented. For the suppression of the unnecessary harmonics, lowpass filters are inserted into the feedlines and ring resonator itself, respectively These bandpass filters show good microwave characteristics with the harmonic suppression ratio of about 39 dB and 35 dB, respectively. Also, the varactor-tuned microstip ring bandpass filter with harmonic suppression is suggested and the tuning bandwidth of more than 450 MHz is obtained.

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A Study on the Design and Fabrication of X-band Dielectric Resonator Oscillator using Phase Looked Loop (위상고정 회로를 이용한 X-band DRO 설계 및 제작에 관한 연구)

  • 성혁제;손병문;최근석
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.5
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    • pp.715-722
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    • 2000
  • In this paper, the PLDRO is designed and implemented for X-band. It is comprised of tunable high Q resonator with a varactor diode for frequency tuning, loop filter and a 1/8 prescaler which up to 10GHz. Also, it is implemented a TCXO and a VCO signal into the phase detector and achieved a highly stable signal source. From the measurement, the designed PLDRO has the output power of 2.5dBm at 8GHz and phase noise of -64.33dBc at 10KHz offset from carrier. Its characteristic is 26 dBc. This PLDRO has much better temperature stability.

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A New Resonance Prediction Method of Fabry-Perot Cavity (FPC) Antennas Enclosed with Metallic Side Walls

  • Kim, Dong-Ho;Yeo, Jun-Ho
    • Journal of electromagnetic engineering and science
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    • v.11 no.3
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    • pp.220-226
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    • 2011
  • We have proposed a new method to accurately predict the resonance of Fabry-Perot Cavity (FPC) antennas enclosed with conducting side walls. When lateral directions of an FPC antenna are not blocked with metallic walls, the conventional technique is accurate enough to predict the resonance of the FPC antenna. However, when the FPC antenna has side walls, especially for case with only a short distance between the walls, the conventional prediction method yields an inaccurate result, inevitably requiring a tedious, time-consuming tuning process to determine the correct resonant height to provide the maximum antenna gain in a target frequency band using three-dimensional full-wave computer simulations. To solve that problem, we have proposed a new resonance prediction method to provide a more accurate resonant height calculation of FPC antennas by using the well-known resonance behavior of a rectangular resonant cavity. For a more physically insightful explanation of the new prediction formula, we have reinvestigated our proposal using a wave propagation characteristic in a hollow rectangular waveguide, which clearly confirms our approach. By applying the proposed technique to an FPC antenna covered with a partially reflecting superstrate consisting of continuously tapered meander loops, we have proved that our method is very accurate and readily applicable to various types of FPC antennas with lateral walls. Experimental result confirms the validness of our approach.

A Study of frequency tunable Ti:sapphire laser for UV lidar (UV 라이다용 주파수 가변 Ti:sapphire 레이저에 관한 연구)

  • Yi, Yong-Woo
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.11a
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    • pp.656-661
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    • 2002
  • Multipass Ti:sapphire amplifier for the light source of lidar was developed in an angular-multiplexing, and the characteristics of output energy and spectrum was investigated. In the two-stage multipass amplifier, we obtained the maximum output energy of 42 mJ, the amplification gain of 21 dB and the output efficiency of 26% on the wavelength of 790 nm. In the tuning range of 715~930nm the spectral linewidth is 0.05 $cm^{-1}$ /. The conversion efficiencies of 35% for SHG at 780 m and 13% for THG at 390 nm are obtained respectively. The continuous tunabilities of 240~306 m UV region and 360~460 nm in deep-blue region could be achieved.

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An MMIC VCO Design and Fabrication for PCS Applications

  • Kim, Young-Gi;Park, Jin-Ho
    • Journal of Electrical Engineering and information Science
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    • v.2 no.6
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    • pp.202-207
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    • 1997
  • Design and fabrication issues for an L-band GaAs Monolithic Microwave Integrated Circuit(MMIC) Voltage Controlled Oscillator(VCO) as a component of Personal Communications Systems(PCS) Radio Frequency(RF) transceiver are discussed. An ion-implanted GaAs MESFET tailored toward low current and low noise with 0.5mm gate length and 300mm gate width has been used as an active device, while an FET with the drain shorted to the source has been used as the voltage variable capacitor. The principal design was based on a self-biased FET with capacitive feedback. A tuning range of 140MHz and 58MHz has been obtained by 3V change for a 600mm and a 300mm devices, respectively. The oscillator output power was 6.5dBm wth 14mA DC current supply at 3.6V. The phase noise without any buffer or PLL was 93dB/1Hz at 100KHz offset. Harmonic balance analysis was used for the non-linear simulation after a linear simulation. All layout induced parasitics were incorporated into the simulation with EEFET2 non-linear FET model. The fabricated circuits were measured using a coplanar-type probe for bare chips and test jigs with ceramic packages.

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Diction Problem of Student Singers Based on the Vocal Tract Resonance (성도 공명을 중심으로 한 성악 전공 대학생의 발음법 연구)

  • Kim, Sun-Suk
    • Speech Sciences
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    • v.7 no.4
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    • pp.59-72
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    • 2000
  • Vocal tract resonances are of paramount importance to voice sounds. Resonance frequencies determine vowel quality and the personal voice timber. The aim of this study was to make an effective diction program according to tuning formant frequencies by adjusting the vocal tract shape in professional voice users. Twelve male student singers and eleven female student singers participated in this study. The subjects repeated five simple vowels /a, e, i, o, u/ in normal speech and singing. The spoken vowels and sung vowels were measured by formant frequencies and the singer's formant frequencies using CSL and DSP Sona-Graph. Separately, Plot formants program was used to draw the vowel chart. The results were as follows. (1) Total formant frequencies of female singers were 11% higher than those of males singers in singing. (2) The F1 and F3 of sung vowels increased compared to F1 and F3 spoken vowels. However, The F2 of sung vowels decreased in comparison with F2 of spoken vowels. (3) Posterior vowel /u/ were moved anteriorly. This phenomenon seemed to be due to head voice singing training. (4) Singer's formant frequencies in student singers appeared according to the part: 2560 Hz for baritone, 2760 Hz for Tenor, 2821 Hz for Mezzo soprano and 3420 Hz for soprano.

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Use of semi-active tuned mass dampers for vibration control of force-excited structures

  • Setareh, Mehdi
    • Structural Engineering and Mechanics
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    • v.11 no.4
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    • pp.341-356
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    • 2001
  • A new class of semi-active tuned mass dampers, named as "Ground Hook Tuned Mass Damper" (GHTMD) is introduced. This TMD uses a continuously variable semi-active damper (so called 'Ground-Hook') in order to achieve more reduction in the vibration level. The ground-hook dampers have been used in the auto-industry as a means of reducing the vibration of primary suspension systems in vehicles. This paper investigates the application of this damper as an element of a tuned damper for the vibration reduction of force-excited single degree of freedom (SDOF) models that can be representative of many structural systems. The optimum design parameters of GHTMDs are obtained based on the minimization of the steady-state displacement response of the main mass. The optimum design parameters which are evaluated in terms of non-dimensional values of the GHTMD are obtained for different mass ratios and main mass damping ratios. Using the frequency responses of the resulting systems, performance of the GHTMD is compared to that of equivalent passive TMD, and it is found that GHTMDs are more efficient. A design methodology to obtain the tuning parameters of GHTMD using the relationships developed in this paper is presented.

Design of a Low Noise Ultraminiature VCO using the InGap/GaAs HBT Technology (InGaP/GaAs HBT 기술을 이용한 저잡음 극소형 VCO 설계)

  • 전성원;이상설
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.15 no.1
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    • pp.68-72
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    • 2004
  • The integrated voltage-controlled-oscillator(VOC) operating at 1.75 ㎓ is designed using the InGaP/GaAs HBT process. The proposed noise removal circuit and FR-4 substrate structure in this letter show the better characteristic of the phase noise and reduce the size of the VCO. The frequency tuning range of the VCO is about 200 ㎒ and the phase noise at 120 ㎑ offset is -119.3 ㏈c/㎐. The power consumption of the VCO core is 11.2 ㎽ at 2.8 V supply voltage and the output power is -2 ㏈m. The calculated figure of merit(FOM) is 191.7, which shows the best performance compared with the previous FET or HBT VCO.