• Title/Summary/Keyword: Frequency Mixer

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Design of Double-Conversion Down Mixer Using Single Half-LO Frequency at 2.3 GHz (2.3 GHz 대역에서 단일 Half-LO 주파수를 이용한 Double-Conversion Down Mixer 설계)

  • Kim Min-Seok;Moon Ju-Young;Yun Sang-Won
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.17 no.8 s.111
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    • pp.719-724
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    • 2006
  • In this paper, we designed the double conversion down mixer by using Half-LO frequency in 2.3 GHz band. The IF frequency is obtained by supplying two LO frequencies to HEMT in both gate type and resistive type. The proposed mixer uses Half-LO frequency the same way as conventional sub-harmonic mixers. However the proposed one uses fundamental component of Half-LO frequency in first stage instead of using second harmonic components of Half-LO frequency, and the IF frequency is obtained by resistive type mixer in second stage, thereby the proposed mixer can improve linearity in comparison with conventional active mixer. We can verify that the proposed mixer has an conversion loss of 5dBm and IIP3 of 16.25dBm by using 10 dBm Power.

Implement of Broadband Resistive Mixer for X-band FMCW Radar (X밴드 FMCW 레이더용 광대역 저항성 주파수 혼합기 구현)

  • Park, Dong-Kook;Han, Tae-Kyoung
    • Journal of Advanced Marine Engineering and Technology
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    • v.31 no.8
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    • pp.970-974
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    • 2007
  • A mixer is a key component in the wireless communication systems. In this paper, we design a mixer which is used in a frequency modulated continuous wave(FMCW) radar system. The frequency sweep range of the radar is from 10 GHz to 11 GHz. The transmitted and received signals of the FMCW radar are applied to LO and RF ports of the mixer, respectively, but the frequency difference between the two signals, which is called "a beat frequency" is under a few KHz and depending on the distance to target. Thus the isolation between the LO and RF ports is very important factor to design this mixer. In this paper we propose a single balanced resistive mixer using GaAs MESFET for this application. We first design a single-ended type resistive mixer using a simulation tool, then design a balanced type to increase the LO-to-RF isolation of the mixer. We fabricated the mixer on the substrate of dielectric constant 10 and thickness 0.635 mm. The measured results show that the isolation and conversion loss of the mixer over the frequency band is 20dB and 10.5dB, respectively. The LO input power for operating the proposed mixer is +3dBm, which is lower than a general conventional mixer's LO power. The 1 dB compression point is 6dBm.

A New Compact Double Conversion Gate Mixer using a Half-LO Frequency

  • Lee, Jae-Ryong;Yun, Sang-Won
    • Journal of electromagnetic engineering and science
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    • v.2 no.1
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    • pp.56-58
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    • 2002
  • In this paper, the double conversion gate mixer using a half-LO frequency is described at 25 GHz band. The proposed mixer uses two HEMTs excited by a single LO signal of half-LO frequency in order to generate the second IF signal. That is, the LO signal having the half-LO frequency is only fed into the gate of the first HEMT mixer as a normal gate mixer. The LO signal through the first mixer is find into the second mixer The proposed miler requires not only half of the normal LO frequency, but also lower LO power than the conventional subharmonically pumped milers. Over the bandwidth of 500 MHz at 24.5 GHz, the conversion gain is 2.5 dB, the noise figure is 9 dB, and the isolation between RF and LO port is 32 dB when the LO poller is 0 dBm at 12.65 GHz.

A High Performance Harmonic Mixer Using a plastic packaged device

  • Kim, Jae-Hyun;Go, Min-Ho;Park, Hyo-Dal;Shin, Hyun-Sik
    • The Journal of the Korea institute of electronic communication sciences
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    • v.2 no.1
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    • pp.1-9
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    • 2007
  • In this paper, a third-order harmonic mixer is designed using frequency multiplier theory for the Ka-band. The gate bias voltage is selected by frequency multiplier theory to maximize the third-order harmonic element ofthe fundamental LO frequency in the proposed mixer. The designed mixer has a gate mixer structure composed of a gate terminal input for the fundamental local signal ($f_{LO}$), RF signal (${RF}$) and a drain terminal output for the harmonic frequency ($3f_{LO}-f_{RF}$) respectively. The Ka-band harmonic mixer is designed and fabricated using a commercial GaAs MESFET device with a plastic package. The proposed mixer will provide a solution for the problems found in the high cost, complex circuitry in a conventional Ka-band mixer. The 33.5 GHz harmonic mixer has a -10 dB conversion gain by pumping 11.5 GHz LO with a +5 dBm level.

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Design of a sub-harmonic dual-gate FET mixer for IMT-2000 base-station

  • Kim, Jeongpyo;Park, Jaehoon
    • Proceedings of the IEEK Conference
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    • 2002.07b
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    • pp.1046-1049
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    • 2002
  • In this paper, a sub-harmonic dual-gate FET mixer for IMT-2000 base-station was designed by using single-gate FET cascode structure and driven by the second order harmonic component of LO signal. The dual-gate FET mixer has the characteristic of high conversion gain and good isolation between ports. Sub-harmonic mixing is frequently used to extend RF bandwidth for fixed LO frequency or to make LO frequency lower. Furthermore, the LO-to-RF isolation characteristic of a sub-harmonic mixer is better than that of a fundamental mixer because the frequency separation between the RE and LO frequency is large. As RF power is -30dBm and LO power is 0dBm, the designed mixer shows the -47.17dBm LO-to-RF leakage power level, 10dB conversion gain, -0.5dBm OIP3, -10.5dBm IIP3 and -1dBm 1dB gain compression point.

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Investigation on the Excessive Vibration of A Mixer Facility in A Water Purification Plant (정수장용 교반기 시설의 과진동 원인 분석)

  • Park, Jin-Ho;Lee, Jeong-Han;Kim, Bong-Soo;Kang, Mun-Hu;Kim, Dong-Soo;Joo, Yoon-Sik
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • 2002.11b
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    • pp.312-316
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    • 2002
  • Recently, mixers are being widely used in the water purification plant in order to increase the filtration efficiency. It has been found that a severe vibration was being felt on a upper structure of a mixer facility during steady state operation. The cause of the excessive vibration of the structure to which the mixer's shaft is supported has been evaluated through modal analysis on the shaft and vibration measurements during operation. The fundamental natural frequency of the mixer's shaft is found to be around 1.8 Hz and the main vibratory frequency around 30 Hz. It has been tuned out that the main vibratory frequency, 30 Hz is coincident with the fundamental holding frequency of the upper structure, and that the acceleration signal of the upper structure and the displacement signal of the mixer's shaft showed highly coherent to each other. Accordingly, it reveals that the main cause of the excessive vibration is due not to the mixer's vibration but to the natural frequency of the upper structure excited by flow turbulence.

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A Frequency Locked Loop Using a Phase Frequency Detector (위상주파수 검출기를 이용한 주파수 잠금회로)

  • Im, Pyung-Soon;Lee, Dong-Hyun;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.28 no.7
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    • pp.540-549
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    • 2017
  • A phase frequency detector(PFD) composed of logic circuits is widely used in a phase locked loop(PLL) due to the easy implementation for integrated circuits. A frequency locked loop(FLL) removes the reference oscillator in the PLL, and the resonator serves as a reference oscillator. A frequency detector(FD) is indispensable for the FLL configuration, and a FD, which is usually composed of a mixer is used to build an FLL. In this paper, instead of FD using mixer, a FD is constructed by using 1.175 GHz resonator composed of microstrip and PFD taking the versatility of PFD into consideration. Using the designed FD, FLL oscillating at a frequency of 1.175 GHz is composed. As a result of comparison with the FLL composed of FD using mixer, it was confirmed that the proposed FLL has better phase noise performance than FLL using mixer FD with FLL bandwidth.

A D-Band Balanced Subharmonically-Pumped Resistive Mixer Based on 100-nm mHEMT Technology

  • Campos-Roca, Y.;Tessmann, A.;Massler, H.;Leuther, A.
    • ETRI Journal
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    • v.33 no.5
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    • pp.818-821
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    • 2011
  • A D-band subharmonically-pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a $180^{\circ}$ power divider structure consisting of a Lange coupler followed by a ${\lambda}$/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs-based metamorphic high electron mobility transistor process with 100-nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4-dBm LO drive and an intermediate frequency of 100 MHz. The input 1-dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively.

Microwave Photonics Frequency-Converted Link Using Electroabsorption Devices

  • Wu, Y.;Shin, D.S.;Chang, W.S.C.;Yu, P.K.L.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.4 no.1
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    • pp.74-81
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    • 2004
  • We propose a novel scheme to transmit high center frequency RF signals using electroabsorption devices (EADs) as frequency converters at the transmitter and the receiver. In this approach frequency heterodyning is employed for obtaining high center frequency. With the EAD as a detector/mixer at the receiver we demonstrated a smaller conversion loss than that of the conventional modulator/mixer. With EAD as a modulator/mixer at the transmitter and with two heterodyned lasers to generate an optical local oscillator (LO), we demonstrated a large reduction (${\sim}23dB$) in conversion loss, and the transmission is not limited by the optical saturation of the EAD. This transmission scheme has optical single-side-band transmission feature which greatly relieves the fiber dispersion effect.

Design of a LNA-Mixer with on-chip balun for 2.45GHz RFID Applications (On-chip 발룬을 포함한 2.45GHz대역 RFID용 LNA-Mixer설계)

  • Lim, Tae-Seo;Ko, Jae-Hyeong;Jung, Hyo-Bin;Kim, Hyeong-Seok
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.56 no.11
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    • pp.1982-1987
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    • 2007
  • This paper presents the design and analysis of LNA-Mixer for 2.45GHz RFID reader. The LNA is implemented by PCSNIM method for low power consumption. The Mixer is implemented by using the Gilbert-type configuration, current bleeding technique and the resonating technique for the tail capacitance. The connection between the two designed circuits is made by active balun. This LNA-Mixer has about 22dB gain and 8.5dB Noise Figure for -50dBm input RF power, LO power is 0dBm, RF frequency is 2.45 GHz and IF frequency is 100kHz. The layout of LNA-Mixer for one-chip design in a 0.18-um TSMC process has $2.5mm{\times}1.0mm$ size.