• Nuclear Engineering and Technology
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• 제56권7호
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• pp.2570-2575
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• 2024

The study aims to develop a novel, lead-free, flexible and lightweight composite shielding material against ionizing radiation. For this, it was used bismuth oxide (Bi₂O₃) in RTV-2 silicon matrix. The shielding tests were carried out in both diagnostic X-ray energies and intermediate gamma-ray energy range of up to 662 keV to determine the radiation attenuation properties of this material in terms of attenuation ratio, half value layer, tenth value layer, mean free path and lead equivalency of samples in weight of 30%, 40%, 50% in Bi₂O₃. In the diagnostic X-ray energy range, half value layer, tenth value layer and lead equivalency (in mm Pb) of the produced samples were measured at 80 and 100 kVp narrow beam conditions according to the requirements of EN IEC 61331-1 standard. The results show that lead equivalent values of the produced novel sheets was measured to be 0.16 mm Pb, corresponding to a 6 mm thickness of the flexible sample when it contains 30% wt. Bi₂O₃ in RTV matrix. The experimental findings for durability and flexibility also indicated that this new RTV-based flexible, lead -free shielding composite can be used safely for especially for manufacturing aprons, garments and thyroid guards used in mammography, radiology, nuclear medicine and dental applications in practice.

• Rapid Communication in Photoscience
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• 제4권3호
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• pp.54-58
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• 2015

Under the condition of femtosecond impulsive nonlinear optical irradiation, the bright and narrowed blue emission of silicon nanocrystal was observed. This synthetic method produced very small (~ 4 nm) oxide-capped silicon nanocrystal having probably ultra small emitting core (~ 1 nm) inferred from luminescence. By controlling the stirring condition, very high efficiencies of luminescence ( 4 fold higher) were obtained compared with the other conventional femtosecond laser fragmentation methods, which was attributed to the differences in hydration shell structure during the femtosecond laser induced irreversible phase transition reaction. When we properly adjusted the irradiation times of the white light continuum and stirring condition, very homogeneous luminescent silicon nanocrystal bands having relatively sharp lineshape were obtained, which can be attributable to the luminescent core site isolated and free from the surface defects.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2013년도 춘계학술대회 논문집
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• pp.97-97
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• 2013

We present a comprehensive study on the integration of h-BN with silicon MOSFET. Temperature dependent mobility modeling is used to discern the effects of top-gate dielectric on carrier transport and identify limiting factors of the system. The result indicates that coulomb scattering and surface roughness scattering are the dominant scattering mechanisms for silicon MOSFETs at relatively low temperature. Interposing a layer of h-BN between $SiO_2$ and Si effectively weakens coulomb scattering by separating carriers in the silicon inversion layer from the charged centers as 2-dimensional h-BN is relatively inert and is expected to be free of dangling bonds or surface charge traps owing to the strong, in-plane, ionic bonding of the planar hexagonal lattice structure, thus leading to a significant improvement in mobility relative to undecorated system. Furthermore, the atomically planar surface of h-BN also suppresses surface roughness scattering in this Si MOSFET system, resulting in a monotonously increasing mobility curve along with gate voltage, which is different from the traditional one with a extremum in a certain voltage. Alternatively, high-k dielectrics can lead to enhanced transport properties through dielectric screening. Modeling indicates that we can achieve even higher mobility by using h-BN decorated $HfO_2$ as gate dielectric in silicon MOSFETs instead of h-BN decorated $SiO_2$.

• 한국표면공학회지
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• 제31권2호
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• pp.117-126
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• 1998

In this study, the residue remaining on the silicon wafer during the oxide overetching using $C_4F_8/H_2$ helicon were plasmas and effects of various cleaning and annealing methods on the removal of the remaining residue were investigated. The addition of 30%$H_2$ to the C4F8 plasma increased the C/F ratio and the thickness of the residue on the etched silicon surface. Most of the residuse on the etched surfaces colud be removed by the oxygen plasmsa cleaning followed by thermal annealing over $450^{\circ}C$. Hydrogen-coataining residue formed on the silicon by 70%$C_4F_8/30%H_2$ helicon plasmas was more easily removed than hydrogen-free residue formed residue formed by $C_4F_8$ helicon wear plasmas. However, damage remaining on the silicon surface overetched using 70%$C_4F_8/30%H_2$ helicon plasmas was intensive and the degree of reocvery duing the post-annealing was lower.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.95.1-95.1
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• 2012

Very High Temperature gas cooler Reactor (VHTR) has been considered as one of the most promising nuclear reactor because of many advantages including high inherent safety to avoid environmental pollution, high thermal efficiency and the role of secondary energy source. The TRISO coated fuel particles used in VHTR are composed of 4 layers as OPyC, SiC, IPyC and buffer PyC. The significance of CVD-SiC coatings used in tri-isotropic(TRISO) nuclear coated fuel particles is to maintain the strength of the whole particle. Various methods have been proposed to evaluate the mechanical properties of CVD-SiC film at room temperature. However, few works have been attempted to characterize properties of CVD-SiC film at high temperature. In this study, micro tensile system was newly developed for mechanical characterization of SiC thin film at elevated temperature. Two kinds of CVD-SiC films were prepared for micro tensile test. SiC-A had [111]-preferred orientation, while SiC-B had [220]-preferred orientation. The free silicon was co-deposited in SiC-B coating layer. The fracture strength of two different CVD-SiC films was characterized up to $1000^{\circ}C$.The strength of SiC-B film decreased with temperature. This result can be explained by free silicon, observed in SiC-B along the columnar boundaries by TEM. The presence of free silicon causes strength degradation. Also, larger Weibull-modulus was measured. The new method can be used for thin film material at high temperature.

• Korean Chemical Engineering Research
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• 제54권6호
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• pp.723-733
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• 2016

반도체 배선 미세화에 의한 한계를 극복하기 위해 실리콘 관통 비아(through silicon via, TSV)를 사용한 소자의 3차원 적층에 대한 연구가 진행되고 있다. TSV 내부는 전해도금을 통해 구리로 채우며, 소자의 신뢰성을 확보하기 위해 결함 없는 TSV의 채움이 요구된다. TSV 입구와 벽면에서는 구리 전착을 억제하고, TSV 바닥에서 선택적으로 구리 전착을 유도하는 바닥 차오름을 통해 무결함 채움이 가능하다. 전해 도금액에 포함되는 유기 첨가제는 TSV 위치에 따라 국부적으로 구리 전착 속도를 결정하여 무결함 채움을 가능하게 한다. TSV의 채움 메커니즘은 첨가제의 거동에 기반하여 규명되므로 첨가제의 특성을 이해하는 연구가 선행되어야 한다. 본 총설에서는 첨가제의 작용기작을 바탕으로 하는 다양한 채움 메커니즘, TSV 채움 효율을 개선하기 위한 평탄제의 개발과 3-첨가제 시스템에서의 연구, 첨가제 작용기와 도금 방법의 수정을 통한 채움 특성의 향상에 관한 연구를 소개한다.

• 한국세라믹학회지
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• 제38권11호
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• pp.987-992
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• 2001

내화물 등급의 저가 질화규소 분말을 분석 및 가공한 후, 소결조제을 첨가하여 가스압 소결하였다. 원료분말에는 다량의 free Si가 있었으며 Fe, Al, Ca등의 불순물도 각각 0.72wt%, 0.5wt%, 0.31wt%로 다량 존재하였다. 산소와 탄소의 함량도 각각 3.3wt%와 0.4wt%로 많았으며, 96%의 $\beta$-상과 4%의 $\alpha$-상으로 구성하였다. 원료 분말을 탈철처리 및 질화처리 하여 소결조제인 6wt% yttria와 2wt% alumina를 첨가하고, 1823K-2133 K의 온도 범위에서 1시간씩 소결하여 소결거동을 조사하였다. 또, 2123K에서 2시간동안 소결하여 충분히 치밀화된 소결체를 얻었다. 비교를 위하여 상용 질화규소 분말을 같이 소결하여 소결거동과 기계적 특성 등을 조사하였다. 저가의 분말을 상용 분말보다 치밀화 속도는 늦었다. 충분히 치밀화된 저가 분말의 소결체는 낮은 aspect rtio를 갖는 조대 결정립들이 다수 존재하였으며, 경도, 파괴인성, 꺽임강도, 내열 충격성 등이 상용 분말의 소결체 보다 떨어졌다.

• Journal of Electrical Engineering and Technology
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• 제5권2호
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• pp.337-341
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• 2010

In this paper, an extremely low voltage operated micro corner cube retroreflector (CCR) was fabricated for free-space optical communication applications by using bulk silicon micromachining technologies. The CCR was comprised of an orthogonal vertical mirror and a horizontal actuated mirror. For low voltage operation, the horizontal actuated mirror was designed with two PZT cantilever actuators, torsional bars, hinges, and a mirror plate with a size of $400{\mu}m{\times}400{\mu}m$. In particular, the torsional bars and hinges were carefully simulated and designed to secure the flatness of the mirror plate by using a finite element method (FEM) simulator. The measured tilting angle was approximately $2^{\circ}$ at the applied voltage of 5 V. An orthogonal vertical mirror with an extremely smooth surface texture was fabricated using KOH wet etching and a double-SOI (silicon-on-insulator) wafer with a (110) silicon wafer. The fabricated orthogonal vertical mirror was comprised of four pairs of two mutually orthogonal flat mirrors with $400{\mu}m4 (length) $\times400{\mu}m$ (height) $\times30{\mu}m$ (thickness). The cross angles and surface roughness of the orthogonal vertical mirror were orthogonal, almost $90^{\circ}$ and 3.523 nm rms, respectively. The proposed CCR was completed by combining the orthogonal vertical and horizontal actuated mirrors. Data transmission and modulation at a frequency of 10 Hz was successfully demonstrated using the fabricated CCR at a distance of approximately 50 cm.

• 센서학회지
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• 제3권2호
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• pp.74-80
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• 1994

Silicon direct bonding 기술은 잔류 응력이 없고, 안정한 특성을 가진 센서의 제작과 silicon-on-insulator 소자의 제조에 널리 이용되고 있다. SDB의 공정 절차는 크게 실리콘 웨이퍼의 수산화 공정 과정과 wet oxidation fumace에서 고온의 열처리 공정 과정을 거치게 된다. 수산화 공정을 행한 후, Fourier transformation-infrared spectroscopy를 사용하여 실리콘 웨이퍼 표면을 분석하여 보면, 실리콘 웨이퍼의 표면에서는 수산화기가 생성됨을 알 수 있다. 실험 결과, $H_{2}O_{2}\;:\; H_{2}SO_{4}$ 용액을 사용한 친수성 용액 처리의 경우에 있어서는 수산화기가 3474 $cm^{-1}$ 주위의 넓은 영역에서 관찰되었다. 그러나, diluted HF 용액의 경우에 있어서는 수산화기가 관찰되지 않았다. 접합된 실리콘웨이퍼를 tetramethylammonium hydroxide 식각 용액을 사용하여 식각 공정을 수행하였다. 식각 공정은 자동 식각 중지가 수행되었으며, 식각된 표면은 평탄하고 균일하였다. 그러므로, 이러한 SDB 기술은 우수한 특성을 가진 압력, 유속, 가속도 센서 등과 같은 센서의 제작 및 센서 응용 분야에 이용될 수 있을 것이다.

• 한국결정성장학회지
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• 제20권2호
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• pp.101-105
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• 2010

플라즈마 에쳐 내에 사용되는 실리콘 전극과 링 부품은 사용 중에 강한 플라즈마와 접촉하면서 주기적인 가열과 냉각 과정을 거친다. 이 때 부품의 표면에서는 열 응력으로 인하여 PSB라고 하는 띠 형상의 결함이 생성되며 이로 인하여 그 수명을 다하게 된다. 원료인 실리콘 잉곳의 관점에서 그 수명에 미치는 인자를 살펴보았다. 잉곳의 등급, 즉 S/F와 S/A에 따라 불순물과 결함의 농도를 GDMS와 ${\mu}$-PCD로 평가하여 잉곳의 어떤 요소들에 의하여 수명이 결정되는가를 분석하였다. 그 결과, {001} 면상에서 관찰되는 <110> 방향의 면 결함들이 PSB와 연결될 가능성이 있음을 제안하였다.