• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.4
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• pp.448-452
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• 2004

The micromachined variable optical attenuator(VOA) was presented in the paper. The VOA has two single mode fiber(SMF) aligned with free space and symmetric parallel plate actuator with microshutter, which can control a amount of light by driving the actuator. In the paper, analysis on driving performances of the VOA was performed and can be reduced threshold voltage through the decreasing displacement actuating range. This paper presents a VOA that is fabricated using bosch deep silicon etching process with silicon on insulator(SOD wafer. The VOA consists of driving electrode, ground electrode, actuating microshutter, and mechanical stopper. In this VOA, actuating shutter is driven by electrostatic force and the threshold voltage is close to 28V, 46V come along with the spring width of 5${\mu}{\textrm}{m}$, 7${\mu}{\textrm}{m}$ respectively. Attenuation range is measured from 2.4㏈ to 16.7㏈.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.1
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• pp.25-31
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• 1998

The reliability of fluorine doped silicon oxide (SiOF) films for intermetal dielectrics in multilevel interconnections of ultra-large scale integrated circuits (ULSIs) is investigated. SiOF films were deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition (ECRPECVD) using H-free source gases, i.e., SiF4 and O2. The effect of post plasma treatment on the moisture absorption and dielectric properties of SiOF films was carried out I terms of air exposure time, The reliability test of Cu/TiN/SiOF/Fi specimen was carried out in terms of temperature by rapid thermal annealing (RTA) in N2 ambient. After O2 plasma treatment,, no appreciable peak directly related to moisture absorption was detected. The capacitance-voltage (C-V) characteristics of the O2 plasma treated SiOF film showed that the film remained to hold the sound dielectric properties even after boiling treatment. The Cu/TiN/SiOF/Si system was found to be reliable up to $600^{\circ}C$.

• Journal of Information Display
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• v.5 no.2
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• pp.1-5
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• 2004

We developed an a-Si TFT-LCD panel with integrated gate driver circuit using a standard 5-MASK process. To minimize the effect of the a-Si TFT current and LC's capacitance variation with temperature, we developed a new a-Si TFT circuit structure and minimized coupling capacitance by changing vertical architecture above gate driver circuit. Integration of gate driver circuit on glass substrate enables single chip and 3-side free panel structure in a-Si TFT-LCD of QVGA ($240{\times}320$) resolution. And using double ASG structure the dead space of TFT-LCD panel could be further decreased.

• Applied Microscopy
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• v.44 no.4
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• pp.123-132
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• 2014

Silicene is one of the most interesting two-dimensional materials, because of not only the extraordinary properties similar to graphene, but also easy compatibility with existing silicon-based devices. However, non-existing graphitic-like structure on silicon and unstable free-standing silicene structure leads to difficulty in commercialization of this material. Therefore, substrates are essential for silicene, which affects various properties of silicene and supporting unstable structure. For maintaining outstanding properties of silicene, van der Waals bonding between silicene and substrate is essential because strong interaction, such as silicene with metal, breaks the band structure of silicene. Therefore, we review the stability of silicene on other two-dimensional materials for van der Waals bonding. In addition, the properties of silicene are reviewed for silicene-based heterostructure.

• Journal of information and communication convergence engineering
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• v.4 no.3
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• pp.105-107
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• 2006

Amorphous silicon is a kind of optical to electric conversion material with current or voltage type after generating a numerous free electron and hole when it is injected by light. It is very effective technology to make schottky diode by bonding thin film to use optical diode. In this paper, we have fabricated optical diode device by forming chrome silicide film through thermal processing with thin film($100{\AA}$) having optimal amorphous silicon. The optimal condition is that we make a thin film by using PECVD(Plasma Enhanced Chemical Vapor Deposition) to improve reliability and characteristics of optical diode. We have obtained high quality diode by using chrome silicide optical diode from dark current and optical current measurement compared to previous method. It makes a simple process and improves a good reliability.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.45-50
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• 2022

The etching with high selectivity of silicon dioxide over silicon nitride is essential in semiconductor fabrication, and gas phase etch (GPE) can increase the competitiveness of the selective dielectric etch. In this work, GPE of plasma enhanced chemical vapor deposited SiO₂ was performed, and the effects of process parameters, such as temperature, partial pressure ratio, and gas supply cycle, are investigated in terms of etch rate and within wafer uniformity. Employing multiple regression analysis, the importance of each parameter elements is analyzed.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.12-15
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• 2007

Excimer-laser-based crystallization is ideallysuited for forming crystalline Si films on glass substrates for use in active-matrix displays. In this paper, we will report on recent and significant technical advances in light sources and beam delivery systems targeted at enabling ultra-uniform mura-free low-temperature polycrystalline silicon active-matrix backplanes while simultaneously lowering production costs and increasing throughput.

• Bulletin of the Korean Chemical Society
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• v.16 no.1
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• pp.12-16
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• 1995

The diastereoselectivity of addition reaction of crotylmetal reagents to cobalt-complexed acetylenic aldehydes and metal-free aldehydes was examined. The anti-diastereomer was the predominant product when the crotyl metallics were Cr, Sn, and Zr. In THF, the uncomplexed aldehydes normally gave higher anti-diastereoselectivity. However, the cobalt-complex of silicon-substituted propynals with three bulky substituents produced increased proportions of syn-diastereomer. In DMF, the selectivity shifted towards syn-isomer except in the case of dimethylphenylsilyl substituent. When tributylstannane was used in the presence of BF3 etherate, moderate syn- selectivity was observed with uncomplexed aldehydes, but only decomposed products from complexed aldehydes.

• Journal of Sensor Science and Technology
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• v.30 no.6
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• pp.395-407
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• 2021

The effect of the specifications of a silicon-on-insulator vertical slot optical waveguide on the sensitivity of homogeneous and surface sensing configurations for TE and TM polarization, respectively, was systematically analyzed using numerical software. The specifications were optimized based on the confinement factor and transmission power of the TE-guided mode distributed in the slot. The waveguide sensitivities of homogeneous and surface sensing were calculated according to the specifications of the optimized slot optical waveguide.

• Journal of Welding and Joining
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• v.32 no.6
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• pp.75-81
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• 2014

Usage of heavy metal element (Pb, Hg and Cd etc.) in electronic devices have been restricted due to the environmental banning of the European Union, such as WEEE and RoHS. Therefore, it is needed to develop the Pb-free solder plated ribbon in photovoltaic (PV) module. This study described that degradation characteristics of PV module under damp heat (DH, $85^{\circ}C$ and 85% R.H.) condition test for 1,000 h. Solar cell ribbons were utilized to hot dipping plate with Pb-free solder alloys. Two types of Pb-free solder plated ribbons, Sn-3.0Ag-0.5Cu (SAC305) and Sn-48Bi-2Ag, and an electroless Sn-40Pb solder hot dipping plated ribbon as a reference sample were prepared to evaluate degradation characteristics. To detect the degradation of PV module with the eutectic and Pb-free solder plated ribbons, I-V curve, electro-luminescence (EL) and cross-sectional SEM analysis were carried out. DH test results show that the reason of maximum power (Pm) drop was mainly due to the decrease fill factor (FF). It was attributed to the crack or oxidation of interface between the cell and the ribbon. Among PV modules with the eutectic and Pb-free solder plated ribbon, the PV module with SAC305 ribbon relatively showed higher stability after DH test than the case of PV module with Sn-40Pb and Sn-48Bi-2Ag solder plated ribbons.