• Applied Microscopy
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• v.46 no.4
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• pp.227-237
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• 2016

This investigation deals with the process of field electron emission from composite microemitters. Tested emitters consisted of a tungsten or carbon-fiber core, coated with a dielectric material. Two coating materials were used: (1) Clark Electromedical Instruments Epoxylite resin and (2) Epidian 6 Epoxy resin (based on bisphenol A). Various properties of these emitters were measured, including the current-voltage characteristics, which are presented as Fowler-Nordheim plots, and the corresponding electron emission images. A field electron microscope with a tip (cathode) to screen (anode) distance of 10 mm was used to electrically characterize the emitters. Measurements were carried out under ultra-high vacuum conditions with a base pressure of $10^{-6}$ Pascal ($10^{-8}$ mbar).

• Applied Microscopy
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• v.46 no.4
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• pp.244-252
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• 2016

This paper describes a new design of carbon nanotube tip. $Nanocly^{TM}$ NC 7000 Thin Multiwall Carbon Nanotubes of carbon purity (90%) and average diameter tube 9.5 nm with a high aspect-ratio (>150) were used. These tips were manufactured by employing a drawing technique using a glass puller. The glass microemitters with internal carbon nanotubes show a switch-on effect to a high current level (1 to $20{\mu}A$). A field electron microscope with a tip (cathode)-screen (anode) separation at ~10 mm was used to characterize the electron emitters. The system was evacuated down to a base pressure of ${\sim}10^{-9}$ mbar when baked at up to ${\sim}200^{\circ}C$ overnight. This allowed measurements of typical Field Electron Emission characteristics; namely the current-voltage (I-V) characteristics and the emission images on a conductive phosphorus screen (the anode). Fowler-Nordheim plots of the current-voltage characteristics show current switch-on for each of these emitters.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.12
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• pp.2361-2365
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• 2007

Temperature-dependent current-voltage characteristics of Organic Light-Emitting Diodes(OLEDs) were studied. The OLEDs were based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3- methylrhenyi)-1,1'-diphenyl-4,4'-diamine (TPD) as a hole transport and tris(8-hydroxyquinoline) aluminum(Alq3) as an electron transport and emissive material. The current-voltage characteristics were measured in the temperature range of 10[K] and 300[K]. A conduction mechanism in OLEDs was interpreted in terms of tunneling and trap-filled limited current.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.649-650
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• 2007

• Journal of the Korean Vacuum Society
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• v.2 no.3
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• pp.319-324
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• 1993

개끗한 텅스텐 결정면의 일함수와 산소 흡착에 의한 텅스텐 결정면(123), (310), (221)의 일함수의 변화를 장전자 방출법으로 측정하였다. 일함수는 Fowler Nordheim equation을 사용하여 계산하였으며 흡착율을 결정할 수 있는 간단한 방법을 제시하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.460-463
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• 2000

The current-voltage characteristics of the sandwich system at different annealing temperatures and different bias voltages have been studied. In order to prepare the Al/V$O_X$/Al sandwich devices structure, thin films of vanadium oxide(V$O_X$) was deposited by r.f. magnetron sputtering from $V_2$$O_5$ target in 10% gas mixture of argon and oxygen, and annealed during lhour at different temperatures in vacuum. Crystall structure, surface morphology, and thickness of films were characterized through XRD, SEM and I-V characteristics were measured by electrometer. The films prepared below 20$0^{\circ}C$ were amorphous, and those prepared above 300 $^{\circ}C$were polycrystalline. At low fields electron injected to conduction band of vanadium oxide and formed space charge, current was limited by trap. Conduction mechanism at mid fields due to Schottky emission, while at high fields it changed to Fowler-Nordheim tunneling effects.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.10
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• pp.2011-2015
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• 2009

In an insulating dielectric liquid such as transformer oil, space charge injection and propagation were analyzed under the Fowler-Nordheim and Richardson-Dushman's thermal emission charge injection conditions for blade-plane electrodes stressed by a step voltage. The governing equations were composed of all five equations such as the Poisson's equation for electric fields, three continuity equations for electrons, negative, and positive ions, and energy balanced equation for temperature distributions. The governing equations for each carrier, the continuity equations, belong to the hyperbolic-type PDE of which the solution has a step change at the space charge front resulting in numerical instabilities. To decrease these instabilities, the governing equations were solved simultaneously by the Finite Element Method (FEM) employing the artificial diffusion scheme as a stabilization technique. Additionally, the terminal current was calculated by using the generalized energy method which is based on the Poynting's theorem, and represents more reliable and stable approach for evaluating discharge current. To verify the proposed method, the discharge phenomena were successfully applied to the blade~plane electrodes, where the radius of blade cap was $50{\mu}m$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.211-214
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• 2004

Carbon nanofiber bundles were formed on silicon substrate using microwave plasma-enhanced chemical vapor deposition system. These bundles were vertically well-grown under the high negative bias voltage condition. The bundles were composed of the individual carbon nanofiber having less than 100 nm diameters. Turn-on voltage of the field emission was measured around 0.8 V/$\mu\textrm{m}$. Fowler-Nordheim plot of the measured values confirmed the field emission characteristic of the measured current.

• Proceedings of the Korean Vacuum Society Conference
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• 2001.02a
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• pp.140-140
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• 2001

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.541-546
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• 1990

The current conduction and dielectric breakdown properties of oxide grown on phosphorous-doped polysilicon have been investigated by means of the ramped I-V measurements. The effective barrier heights of polyoxide grown by different silicon deposition and oxidation conditions were calculated from the Fowler-Nordheim tunneling characteristic. The average critical fields were also obtained for each film. From the results, the high temperature oxided polyoxide grown on amorphous silicon film shows superior electrical characteristics comparing to the other films.