• The Transactions of the Korean Institute of Electrical Engineers P
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• v.59 no.4
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• pp.423-427
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• 2010

Portable sheet resistance-measuring instrument using the dual-configuration Four-Point Probe method is developed for the purpose of precisely measuring the sheet resistance of conducting thin films. While single-configuration Four-Point Probe method has disadvantages of applying sample size, shape and thickness corrections for a probe spacing, the developed instrument has advantages of no such corrections, little edge effects and measuring simply and accurately the sheet resistance between $0.2\Omega/sq$ and $2k\Omega/sq$.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2011.06a
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• pp.1045-1046
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• 2011

• The Transactions of The Korean Institute of Electrical Engineers
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• v.60 no.7
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• pp.1434-1437
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• 2011

Precision measurement of silicon wafer resistivity has been using single-configuration Four-Point Probe(FPP) method. This FPP method have to applying sample size, shape and thickness correction factor for a probe pin spacing to precision measurement of silicon wafer. The deference for resistivity measurement values applied correction factor and not applied correction factor was about 1.0 % deviation. The sample size, shape and thickness correction factor for a probe pin spacing have an effects on precision measurement for resistivity of silicon wafer.

• Journal of the Korean Society for Nondestructive Testing
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• v.21 no.5
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• pp.532-541
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• 2001

Developments of nondestructive evaluation techniques for reduction of strength or toughness by aging of material have been carried out, and the method using electrical resistivity is one of them. In this study, to examine the application of electrical resistivity to the evaluation of degradation of metallic alloy, ten different non-magnetic materials were selected as test materials. Electrical resistivities measured by DC two-point probe method and those measured by non-contact type eddy current method were compared with each other. In addition, to examine the application possibility of four-point probe technology in field, the electrical resistivities for 1Cr-lMo-0.25V steel measured by DC two-point probe method and four-point probe method were compared with each other Differences between two measured values for the 1Cr-1Mo-0.25V steel were 0.6%. Therefore, the four-point probe method can be applied to the estimation of the degradation of metallic alloy. ect.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.4 s.175
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• pp.874-880
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• 2000

In this paper, a DC potential drop measurement system was used to find the position of the flaw on a simple thin plate. Four-point probe test was evaluated and used for this study. In the four-point probe test, the more distance between current pins provides the more measurable scope, the less voltage difference, and the more voltage difference rate. In the other hand, the more distance between voltage pins provides the less voltage difference and the less voltage difference rate. An optimized four-point probe was applied to measure the relation between voltage and the relative position of flaw to the probe. The Maxwell 21) simulator was used to analyze the electromagnetic field, and it showed that the analytical result was similar to the experimental result within 11.4% maximum error.

• Journal of Electrical Engineering and Technology
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• v.12 no.3
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• pp.1314-1319
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• 2017

A handheld sheet resistance meter that can easily and quickly measure the sheet resistance of indium tin oxide films was developed. The dual-configuration four-point probe method was adopted for this instrument, which measured sheet resistance in the range from $0.26{\Omega}/sq$. to $2.6k{\Omega}/sq$. with 0.3 % ~ 0.5 % uncertainty. The screen of the instrument displayed the sheet resistance when the probe was in contact with the sample surface and the value continued to be displayed during the probe contact. Even after separating the probe from the surface, the value was still displayed on the screen and could be read easily. A feature of the instrument was the use of the dual-configuration technique to reduce edge effects markedly compared with the single-configuration technique and its ease of operation without applying correction factors for sample size and thickness.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1388-1389
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• 2006

금속의 전기비저항 측정은 4단자 방법, van der Pauw 방법, Four Point Probe(FPP) 방법 등이 있으며, 이들의 정확한 측정방법을 고찰하고, 그 중 FPP 방법에 의한 비저항의 두께효과를 비교 분석하기 위하여 비자성 금속 SUS 316을 두께별로 가공한 후 실험하였다. 그 결과 4단자 및 van der Pauw 방법으로 측정된 도전율은 각각 2.273 %IACS으로 나타났으며, FPP방법으로 측정된 도전율은 probe spacing 5.0 mm, dc current 10 A에서 시료의 두께가 2 mm일 때 2.288 %IACS, 3 mm일 때 2.271 %IACS로서 상기 두 방법으로 측정한 결과와 0.5 %이내에서 일치하였으나, 시료가 5mm 및 11 mm 에서는 매우 큰 오차를 나타냈다.

• Journal of Electrical Engineering and Technology
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• v.10 no.1
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• pp.325-330
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• 2015

With approval from the Asia Pacific Metrology Program Working Group on Materials Metrology (APMP WGMM), an international comparison for sheet resistance standards for silicon wafers was firstly conducted among Korea Research Institute of Standards and Science (KRISS) in Korea, CMS/ITRI in Taiwan, and NIM in China, which are national metrology institutes (NMIs), from August 2011 to January 2012. The sheet resistance values of the standards are $10{\Omega}$, $100{\Omega}$, and $1000{\Omega}$; the measurement was conducted in sequence at KRISS, CMS/ITRI, NIM, and KRISS again using the four-point probe method with single and dual configuration techniques. The reference value for the measurement results of the three NMIs was obtained through averaging the values of the three results for each sheet resistance range. The differences between the reference value and the measured values is within 0.22% for $10{\Omega}$, 0.17% for $100{\Omega}$, and 0.12% for $1000{\Omega}$. Therefore, the international consistency for conducting sheet resistance measurements is confirmed within 0.22% through the APMP WGMM approved comparison.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.267-269
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• 2003

반도체 웨이퍼 및 각종 박막의 면/비저항(sheet/resistivity resistance)의 측정에 비교적 간단히 측정할 수 있고 측정정확도가 높은 4탐침(four-point probe)방법이 널리 사용되고 있다 또한 4탐침 측정방법은 높은 분해능의 contour map작성과 ion implantation의 doping accuracy 및 doping uniformity의 측정에도 사용된다. 최근 재료의 소형, 박막화 경향으로 볼 때 정확한 비저항 측정의 필요성이 요구되고 있으며 이에 따라 4탐침 측정기술인 single 및 dual configuration method로 실리콘 웨이퍼에 대한 비저항의 측정 정확도를 고찰한 결과 dual configuration 측정방법이 single configuration측정 방법에 비하여 정밀 정확도가 더 좋은 것으로 고찰되었다.

• Nuclear Engineering and Technology
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• v.32 no.5
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• pp.433-445
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• 2000

The interfacial area concentration (IAC) is one of the most important parameters in the two-fluid model for two-phase flow analysis. The IAC can be measured by a local conductivity probe method that uses the difference of conductivity between water and air/steam. The number of sensors in the conductivity probe may be differently chosen by considering the flow regime of two-phase flow. The four sensor conductivity probe method predicts the IAC without any assumptions of the bubble shape. The local IAC can be obtained by measuring the three dimensional velocity vector elements at the measuring point, and the directional cosines of the sensors. The five sensor conductivity probe method proposed in this study is based on the four sensor probe method. With the five sensor probe, the local IAC for a given referred measuring area of the probe can be predicted more exactly than the four sensor probe. In this paper, the mathematical approach of the five sensor probe method for measuring the IAC is described, and a numerical simulation is carried out for ideal cap bubbles of which the sizes and locations are determined by a random number generator.