• Journal of Microbiology and Biotechnology
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• v.16 no.10
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• pp.1561-1569
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• 2006

Denaturing gradient gel electrophoresis (DGGE) is one of the most frequently used methods for analysis of soil microbial community structure. Unbiased PCR amplification of target DNA templates is crucial for efficient detection of multiple microbial populations mixed in soil. In this study, DGGE profiles were compared using different pairs of primers targeting different hypervariable regions of thirteen representative soil bacteria and clones. The primer set (1070f-1392r) for the E. coli numbering 1,071-1,391 region could not resolve all the 16S rDNA fragments of the representative bacteria and clones, and moreover, yielded spurious bands in DGGE profiles. For the E. coli numbering 353-514 region, various forward primers were designed to investigate the efficiency of PCR amplification. A degenerate forward primer (F357IW) often yielded multiple bands for a certain single 16S rDNA fragment in DGGE analysis, whereas nondegenerate primers (338f, F338T2, F338I2) differentially amplified each of the fragments in the mixture according to the position and the number of primer-template mismatches. A forward primer (F352T) designed to have one internal mismatch commonly with all the thirteen 16S rDNA fragments efficiently produced and separated all the target DNA bands with similar intensities in the DGGE profiles. This primer set F352T-519r consistently yielded the best DGGE banding profiles when tested with various soil samples. Touchdown PCR intensified the uneven amplification, and lowering the annealing temperature had no significant effect on the DGGE profiles. These results showed that PCR amplification bias could be much improved by properly designing primers for use in fingerprinting soil bacterial communities with the DGGE technique.

• Korean Journal of Materials Research
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• v.33 no.6
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• pp.229-235
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• 2023

An all-perovskite oxide heterostructure composed of SrSnO₃/Nb-doped SrTiO₃ was fabricated using the pulsed laser deposition method. In-plane and out-of-plane structural characterization of the fabricated films were analyzed by x-ray diffraction with θ-2θ scans and φ scans. X-ray photoelectron spectroscopy measurement was performed to check the film's composition. The electrical transport characteristic of the heterostructure was determined by applying a pulsed dc bias across the interface. Unusual transport properties of the interface between the SrSnO₃ and Nb-doped SrTiO₃ were investigated at temperatures from 100 to 300 K. A diodelike rectifying behavior was observed in the temperature-dependent current-voltage (IV) measurements. The forward current showed the typical IV characteristics of p-n junctions or Schottky diodes, and were perfectly fitted using the thermionic emission model. Two regions with different transport mechanism were detected, and the boundary curve was expressed by ln I = -1.28V - 13. Under reverse bias, however, the temperature- dependent IV curves revealed an unusual increase in the reverse-bias current with decreasing temperature, indicating tunneling effects at the interface. The Poole-Frenkel emission was used to explain this electrical transport mechanism under the reverse voltages.

• Journal of Sensor Science and Technology
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• v.32 no.6
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• pp.425-431
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• 2023

An asymmetric metal-semiconductor-metal Al_0.24Ga_0.76N ultraviolet (UV) sensor was fabricated, and the effects of local Joule heating were investigated. After dielectric breakdown, the current density under a reverse bias of 2.0 V was 1.1×10^-9 A/cm², significantly lower than 1.2×10^-8 A/cm² before dielectric breakdown; moreover, the Schottky behavior of the Ti/Al/Ni/Au electrode changed to ohmic behavior under forward bias. The UV-to-visible rejection ratio (UVRR) under a reverse bias of 7.0 V before dielectric breakdown was 87; however, this UVRR significantly increased to 578, in addition to providing highly reliable responsivity. Transmission electron microscopy revealed interdiffusion between adjacent layers, with nitrogen vacancies possibly formed owing to local Joule heating at the AlGaN/Ti/Al/Ni/Au interfaces. X-ray photoelectron microscopy results revealed decreases in the peak intensities of the O 1s binding energies associated with the Ga-O bond and OH-, which act as electron-trapping states on the AlGaN surface. The reduction in dark current owing to the proposed local heating method is expected to increase the sensing performance of UV optoelectronic integrated devices, such as active-pixel UV image sensors.

• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.229-237
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• 2005

The degradation phenomena in SiGe hetero-junction bipolar transistors(SiGe HBTs) induced by bias stress are investigated in this review. If SiGe HBTs are stressed over a specific time interval, the device parameters deviate from their nominal values due to the internal changes in the devices. Reverse-bias stress on emitter-base(EB) junctions causes base current increase and current gain decrease because carriers accelerated by the electrical field generate recombination centers. When forward-bias current stress is conducted at an ambient temperature above $140^{\circ}C$ , hot carriers produced by Auger recombination or avalanche multiplication induce current gain fluctuation. Mixed-mode stressing, where high emitter current and high collector-base voltage are simultaneously applied to the device, provokes base current rise as EB reverse-bias stressing does.

• Journal of the Korean Vacuum Society
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• v.6 no.2
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• pp.136-142
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• 1997

An/n-GaAs(100) Schottky barrier diode has been investigated by using electoreflectance(ER). From the observed Franz-Keldysh oscillatins(FKO), the internal electric field(Ei) of the sample is $5.76\times 10^{4}$V/cm at 300 K. As the modulation voltage($V_{ac}$) IS changed, the line shape of ER signal does not change but its amplitude various linerly. For increasing forward and reverse dc bias boltage($V_{bias}$), the amplitude of ER signal decreases. The internal electric field decreased from $19.3\times 10^4\sim4.39\times10^4$V/cm as $V_{bias}$ INCREASES FROM -5.0 V TO 0.6 V. For Au/n-GaAs the valve of built-in voltage($V_{bi}$) determined from the plot of $V_{bias}$ versus $E_i^2$ is 0.70 V. This value agrees with that observed in the plot of $V_{bias}$ versus amplitude of FKO peak. In addition, the carrier concentraion(N) and potential barrier($\Phi$) of the sample at 300 K are found to be about $2.4\times 10^{16}\textrm{cm}^{-3}$ and 0.78 eV, respectively.

• Transactions of the Korean Society for Noise and Vibration Engineering
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• v.15 no.3 s.96
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• pp.364-370
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• 2005

The active magnetic bearing (AMB) systems mounted in moving vehicles are exposed to the disturbances due to the base motion, often leading to malfunction or damage as well as inaccurate positioning of the systems. Thus, in the controller design of such AMB systems, robustness to base disturbances becomes an essential requirement. In this study, effective control schemes are proposed for the homo-polar AMB system, which uses permanent magnets for generation of bias magnetic flux, when it is subject to base motion, and its control performance is experimentally evaluated. The base motion of AMB system is modeled as the dynamic disturbances in the gravity and base excitation forces. To effectively compensate for the disturbances, the angle feed-forward controller based on the inverse dynamic model and the acceleration feed-forward controller based on the normalized filtered-X LMS algorithm are proposed. The performance test of the prototype AMB system is carried out, when the system is mounted on rate table. The experimental results show that the performance of the proposed controllers for the AMB system is satisfactory in compensating for the disturbances due to the base motion.

• Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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• 2004.11a
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• pp.486-489
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• 2004

The active magnetic bearing (AMB) systems mounted in moving vehicles are exposed to the disturbances due to the base motion, often leading to malfunction or damage as well as inaccurate positioning of the systems. Thus, in the controller design of such AMB systems, robustness to base disturbances becomes an essential requirement. In this study, effective control schemes are proposed for the homo-polar AMB system, which uses permanent magnets for generation of bias magnetic flux, when it is subject to base motion, and its control performance is experimentally evaluated. The base motion of AMB system is modeled as the dynamic disturbances in the gravity and base excitation forces. To effectively compensate for the disturbances, the angle feed-forward controller based on the inverse dynamic model and the acceleration feed-forward controller based on the normalized filtered-X LMS algorithm are proposed. The performance test of the prototype AMB system is carried out, when the system is mounted on rate table. The experimental results show that the performance of the proposed controllers for the AMB system is satisfactory in compensating for the disturbances due to the base motion.

• Journal of the Korean Data and Information Science Society
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• v.17 no.4
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• pp.1053-1065
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• 2006

This paper proposes a method in one-way layouts for longitudinal data with informative drop-out. When dropouts are informative, that is, correlated with unobserved data and/or the previous observed data, the simple imputation methods such as 'last observation carried forward' (LOCF) methods would arise the bias of the testing models. The maximum likelihood procedure combined with a logit model for the drop-out process is proposed to test treatment effects for one factorial designs and compared with LOCF method in two examples.

• Korean Journal of Crystallography
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• v.14 no.2
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• pp.105-109
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• 2003

Electrical properties of Ni/Au/p-GaN and optical properties of epitaxial GaN MQW LED on sapphire were characterized. At 20 mA forward bias, GaN MQW emitted in the blue at 470 nm. Current-voltage (I-V) characteristics were decreased linearly with the annealing temperature. The resistivity of Ni/Au contacts was found by TLM measurements to be of device quality (2×10/sup -1/Ωㆍcm).

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.11
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• pp.1111-1116
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• 2011

In this paper, a 60 GHz bidirectional active phase shifter with 130 nm CMOS is presented by replacing CMOS passive switchs in switched-line type phase shifter with Common Gate Amplifier(bidirectional amplifier). Bidirectional active phase shifter is composed of bidirectional amplifier blocks and passive delay line network blocks. The suitable topology of bidirectional amplifier block is CGA(Common Gate Amplifier) topology and matching circuits of input and output are symmetrical due to design same characteristic of it's forward and reverse way. The direction(forward and reverse way) and amplitude of amplification can be controlled by only one bias voltage($V_{DS}$) using combination bias circuit. And passive delay line network blocks are composed of microstrip line. An 1-bit phase shifter is fabricated by Dongbu HiTek 1P8M 130-nm CMOS technology and simulation results present -3 dB average insertion loss and respectively 90 degree and 180 degree phase shift at 60 GHz.