• Journal of the Korean institute of surface engineering
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• v.50 no.5
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• pp.398-404
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• 2017

In order to study the AC driving mechanism for OLED lighting, the fluorescent OLEDs were fabricated and the electroluminescent characteristics of the OLEDs by AC forward bias were analyzed. In the case of the driving method of OLED by AC forward bias under the same voltage and the same current density, degradation of luminescent characteristics for elapsed time progressed faster than in the case of the driving method by DC bias. These phenomena were caused by the peak voltage of AC forward bias which is ${\sqrt{2}}$ times higher than the DC voltage. In addition, the degradation of the OLED was accelerated because the AC forward bias had come close to the upper limit of the allowable voltage range even though the peak voltage didn't exceed the allowable range of the OLED. However, the fabricated fluorescent OLED showed little degradation of OLED characteristics due to AC forward bias from 0 V to 6.04 V. Therefore, OLED lighting by AC driving will become commercialized if sufficient luminance is realized at a voltage at which the characteristics of the OLED are not degradation by the AC driving method.

• Current Optics and Photonics
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• v.5 no.2
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• pp.173-179
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• 2021

The electroluminescence (EL) intensities of GaN-based light-emitting diodes (LEDs) are estimated based on their photoluminescence (PL) properties. The PL intensity obtained under open-circuit conditions is divided into two parts: the PL intensity under a forward bias lower than the optical turn-on voltage, and the difference between the PL intensities under open-circuit conditions and under forward bias. The luminescence induced by photoexcitation under a constant forward bias lower than the optical turn-on voltage is primarily the PL from the excited area of the LED. In contrast the intensity difference, obtained by subtracting the PL intensity under the forward bias from that under open-circuit conditions, contains the EL induced by the photocarriers generated during photoexcitation. In addition, a reverse photocurrent is generated during photoexcitation under constant forward bias across the LED, and can be correlated with the PL-intensity difference. The relationship between the photocurrent and PL-intensity difference matches well the relationship between the injection current and EL intensity of LEDs. The ratio between the photocurrent generated under a bias and the short-circuit current is related to the ratio between the PL-intensity difference and the PL intensity under open-circuit conditions. A relational expression consisting of the ratios, short-circuit current, and PL under open-circuit conditions is proposed to estimate the EL intensity.

• Proceedings of the IEEK Conference
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• 1999.11a
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• pp.963-966
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• 1999

This Paper describes the design of high speed and low power comparator based on the feed forward bias control. Major building blocks of this comparator are composed of input offset canceling circuit and feed forward bias control circuit. The usual offset canceling circuit cancels the offset voltages by storing them in capacitors using MOS switches, The comparator of this paper employs the bias control circuit which generates bias signal from the input signal. The bias signal is applied to the capacitors and keeps the transfer of chares in the capacitors in the minimal amount, therefore making the comparator operate in stable condition and reduce decision time. The comparator in this form has very samll area and power dissipation. Maximum sampling rate is 200 Ms/sec. The comparator is designed in 0.65${\mu}{\textrm}{m}$ technology and the offset is less than 0.5㎷.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.3
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• pp.439-444
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• 2016

The method for extracting the SPICE model parameter of Schottky diode under DC forward bias is proposed. A method for improving the accuracy of the SPICE model parameter at various temperatures is proposed. Three analysis steps according to the magnitude of the current is used in order to extract the parameters effectively. At each analysis step, initial parameters are calculated by using the current-voltage equations and the Levenberg-Marquardt analysis is proceeded. To verify the validity of the proposed method, the SPICE model parameters for the BAT45 and FSV1045 under DC forward bias is extracted. Schottky diode currents obtained from the proposed method shows the average relative error of 6.1% and 9% compared with the measured data for the BAT45 and FSV1045 sample at various temperatures.

• Korean Journal of Materials Research
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• v.30 no.7
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• pp.333-337
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• 2020

Orthorhombic DyMnO₃ films are fabricated epitaxially on Nb-1.0 wt%-doped SrTiO₃ single crystal substrates using pulsed laser deposition technique. The structure of the deposited DyMnO₃ films is studied by X-ray diffraction, and the epitaxial relationship between the film and the substrate is determined. The electrical transport properties reveal the diodelike rectifying behaviors in the all-perovskite oxide junctions over a wide temperature range (100 ~ 340 K). The forward current is exponentially related to the forward bias voltage, and the extracted ideality factors show distinct transport mechanisms in high and low positive regions. The leakage current increases with increasing reverse bias voltage, and the breakdown voltage decreases with decrease temperature, a consequence of tunneling effects because the leakage current at low temperature is larger than that at high temperature. The determined built-in potentials are 0.37 V in the low bias region, and 0.11 V in the high bias region, respectively. The results show the importance of temperature and applied bias in determining the electrical transport characteristics of all-perovskite oxide heterostructures.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.151-155
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• 2015

We fabricated the Cu Schottky contact on an n-type Ge wafer and investigated the forward bias current-voltage (I-V) characteristics in the temperature range of 100~300 K. The zero bias barrier height and ideality factor were determined based on the thermionic emission (TE) model. The barrier height increased and the ideality factor decreased with increasing temperature. Such temperature dependence of the barrier height and the ideality factor was associated with spatially inhomogeneous Schottky barriers. A notable deviation from the theoretical Richardson constant (140.0 Acm^-2K^-2 for n-Ge) on the conventional Richardson plot was alleviated by using the modified Richardson plot, which yielded the Richardson constant of 392.5 Acm^-2K^-2. Finally, we applied the theory of space-charge-limitedcurrent (SCLC) transport to the high forward bias region to find the density of localized defect states (N_t), which was determined to be 1.46 × 10¹² eV^-1cm^-3.

• Journal of IKEEE
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• v.22 no.1
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• pp.205-208
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• 2018

In this work, we performed reverse- and forward-gate bias stress tests on normally-off AlGaN/GaN high electron mobility transistors(HEMTs) with p-AlGaN-gate for reliability assessment. Inverse piezoelectric effect, commonly observed in Schottky-gate AlGaN/GaN HEMTs during reverse bias stress, was not observed in p-AlGaN-gate AlGaN/GaN HEMTs. Forward gate bias stress tests revealed distinct degradation of p-AlGaN-gate devices exhibiting sudden increase of gate leakage current. We suggest that forward gate bias stress tests should be performed to define the failure criteria and assess the reliability of normally off p-AlGaN-gate GaN HEMTs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.87-91
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• 1998

In this paper, We analyzed the current-voltage characteristics with n-type silicon substrates concentration and temperature variations (Room temperature, 50$^{\circ}C$, 75$^{\circ}C$) in platinum silicide and silicon junction. The electrical parameters of measurement are turn-on voltage, saturation current, ideality factor, barrier height, dynamic resistance in forward bias and reverse breakdown voltage according to variations of junction concentration of substrates and measurement temperature variations. As a result, the forward turn-on voltage, reverse breakdown voltage, barrier height and dynamic resistance were decreased but saturation currents and ideality factor were increased by substrates increased concentration variations in platinum silicide and n-silicon junction. In increased measurement temperature (RT, 50$^{\circ}C$, 75$^{\circ}C$), the extracted electrical parameter values of characteristics were rises by increased temperature variations according to the forward and reverse bias.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.275-276
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• 2009

• Korean Journal of Materials Research
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• v.26 no.8
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• pp.412-416
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• 2016

The electrical properties of Au/n-type Ge Schottky contacts with different contact areas were investigated using current-voltage (I-V) measurements. Analyses of the reverse bias current characteristics showed that the Poole-Frenkel effect became strong with decreasing contact area. The contribution of the perimeter current density to the total current density was found to increase with increasing reverse bias voltage. Fitting of the forward bias I-V characteristics by considering various transport models revealed that the tunneling current is dominant in the low forward bias region. The contributions of both the thermionic emission (TE) and the generation-recombination (GR) currents to the total current were similar regardless of the contact area, indicating that these currents mainly flow through the bulk region. In contrast, the contribution of the tunneling current to the total current increased with decreasing contact area. The largest $E_{00}$ value (related to tunneling probability) for the smallest contact area was associated with higher tunneling effect.