• Journal of the Korean Society for Precision Engineering
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• v.28 no.8
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• pp.966-974
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• 2011

The use of ion beams in the micro/nano scale is greatly increased by technology development. Especially, focused ion beams (FIBs) have a great potential to fabricate the device in sub micro scale. Nevertheless, FIB has several limitations, surface swelling in low ion dose regime, precipitation of incident ions, and the redeposition effect due to the sputtered atoms. In this research, we demonstrate a way which can be used to fabricate mold structures on a silicon substrate using FIBs. For the purpose of the demonstration, two essential subjects are necessary. One is that focused ion beam diameter as well as shape has to be measured and verified. The other one is that the accurate rotational symmetric model of ion-solid interaction has to be mathematically developed. We apply those two, measured beam diameter and mathematical model, to fabricate optical lenses mold on silicon. The characteristics of silicon mold fabrication will be discussed as well as simulation results.

• Applied Microscopy
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• v.46 no.1
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• pp.14-19
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• 2016

Currently, focused ion beams (FIB) are widely used for specimen preparation in atom probe tomography (APT), which is a three-dimensional and atomic-scale compositional analysis tool. Specimen preparation, in which a specific region of interest is identified and a sharp needle shape created, is the first step towards successful APT analysis. The FIB technique is a powerful tool for site-specific specimen preparation because it provides a lift-out technique and a controllable manipulation function. In this paper, we demonstrate a general procedure containing the crucial points of FIB-based specimen preparation. We introduce aluminum holders with moveable pin and an axial rotation manipulator for specimen handling, which are useful for flipping and rotating the specimen to present the backside and the perpendicular direction. We also describe specimen preparation methods for nanowires and nanopowders, using a pick-up method and an embedding method by epoxy resin, respectively.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.67-68
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• 2010

• Journal of the Korean Society for Precision Engineering
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• v.24 no.10
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• pp.109-116
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• 2007

Focused ion beams are a potential tool for micro/nano structure fabrication while several problems still have to be overcome. Redeposition of sputtered atoms limits the accurate fabrication of micro/nano structures. The challenge lies in accurately controlling the focused ion beam to fabricate various arbitrary curved shapes. In this paper a basic approach for the focused ion beam induced direct fabricate of fundamental features is presented. This approach is based on the topography simulation which naturally considers the redeposition of sputtered atoms and sputtered yield changes. Fundamental features such as trapezoidal, circular and triangular were fabricated with this approach using single or multiple pass box milling. The beam diameter(FWHM) and maximum current density are 68 nm and $0.8 A/cm^2$, respectively. The experimental investigations show that the fabricated shape is well suited for the pre-designed fundamental features. The characteristics of ion beam induced direct fabrication and shape formation will be discussed.

• Applied Science and Convergence Technology
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• v.25 no.5
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• pp.98-102
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• 2016

The level set method has recently become popular in the simulation of semiconductor processes such as etching, deposition and photolithography, as it is a highly robust and accurate computational technique for tracking moving interfaces. In this research, full three-dimensional level set simulation has been developed for the investigation of focused ion beam processing. Especially, focused ion beam induced nanodot formation was investigated with the consideration of three-dimensional distribution of redeposition particles which were obtained by Monte-Carlo simulation. Experimental validations were carried out with the nanodots that were fabricated using focused $Ga^+$ beams on Silicon substrate. Detailed description of level set simulation and characteristics of nanodot formation will be discussed in detail as well as surface propagation under focused ion beam bombardment.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.72-72
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• 1992

• Journal of the Korea Institute of Military Science and Technology
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• v.14 no.6
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• pp.1107-1113
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• 2011

In this paper, ion beam technology was investigated through the published papers. Ion beam technology is mainly used by the focused ion beams. There are two different types of application methods. One method is to remove the material from the substrate, the other one is to deposit the materials on the surface of the substrate or specimen. Based on the literature review there are 1.5 times more published research papers related to the deposition than those of the removal.

• Applied Microscopy
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• v.36 no.spc1
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• pp.25-33
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• 2006

Nanofabrication with finely focused ion and electron beams is reviewed, and position and size controlled fabrication of nano-metals and -semiconductors is demonstrated. A focused ion beam (FIB) interface attached to a column of 200keV transmission electron microscope (TEM) was developed. Parallel lines and dots arrays were patterned on GaAs, Si and $SiO_2$ substrates with a 25keV $Ga^+-FIB$ of 200nm beam diameter at room temperature. FIB nanofabrication to semiconductor specimens caused amorphization and Ga injection. For the electron beam induced chemical vapor deposition (EBI-CVD), we have discovered that nano-metal dots are formed depending upon the beam diameter and the exposure time when decomposable gases such as $W(CO)_6$ were introduced at the beam irradiated areas. The diameter of the dots was reduced to less than 2.0nm with the UHV-FE-TEM, while those were limited to about 15nm in diameter with the FE-SEM. Self-standing 3D nanostructures were also successfully fabricated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1992.05a
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• pp.30-33
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• 1992

This thesis was investigated on ion-induced characteristics in a-$Se_{75}Ge_{25}$ positive and negative resists for focused-ion-beam microlithogaphy. The exposed a-$Se_{75}Ge_{25}$ inorganic thin film shows an increase in optical absorption after exposure to~$10_{16}$ dose of Ga+. The observed shift in the absorption edge toward longer wavelengths is consistent with that in films exposed to band-gap photons(~$10^{21}$photons/cm2). This result may be related with microstructural rearrangements with in the short range of SeGe network. Due to changes in the short range order, the chemical bonding may be affected, which results in increased chemical dissolution in ion-induced film. Also, this resist exhibits good thermal stability because of its high Tg(~$220^{\circ}C$). When focused ion beams are used for direct exposure of resist over a substrate, unwanted implantation of the substrate may be an issue. A possible way to avoid this is to match the thickness of the resist to the range of ions in the resist. Thin aspect is currently under investigation.

• Journal of the Korean Society for Precision Engineering
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• v.24 no.8 s.197
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• pp.108-115
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• 2007

3D nano-scale manufacturing is an important aspect of advanced manufacturing technology. A key element in ability to view, fabricate, and in some cases operate micro-devices is the availability of tightly focused particle beams, particularly of photons, electrons, and ions. The use of ions is the only way to fabricate directly micro-/ nano-scale structures. It has been utilized as a direct-write method for lithography, implantation, and milling of functional devices. The simulation of ion beam induced physical and chemical phenomena based on sound mathematical models associated with simulation methods is presented for 3D micro-/nanofabrication. The results obtained from experimental investigation and characteristics of ion beam induced direct fabrication will be discussed.