Applied Science and Convergence Technology

The Korean Vacuum Society (한국진공학회)
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Full 3D Level Set Simulation of Nanodot Fabrication using FIBs

  • Kim, Heung-Bae (Department of Mechanical Engineering, Myongji College)
  • Received : 2016.08.05
  • Accepted : 2016.08.30
  • Published : 2016.09.30
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Abstract

The level set method has recently become popular in the simulation of semiconductor processes such as etching, deposition and photolithography, as it is a highly robust and accurate computational technique for tracking moving interfaces. In this research, full three-dimensional level set simulation has been developed for the investigation of focused ion beam processing. Especially, focused ion beam induced nanodot formation was investigated with the consideration of three-dimensional distribution of redeposition particles which were obtained by Monte-Carlo simulation. Experimental validations were carried out with the nanodots that were fabricated using focused $Ga^+$ beams on Silicon substrate. Detailed description of level set simulation and characteristics of nanodot formation will be discussed in detail as well as surface propagation under focused ion beam bombardment.

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