• Title/Summary/Keyword: Focused Beam

Search Result 639, Processing Time 0.033 seconds

Monte-Carlo Simulation for Exposure and Development of Focused Ion Beam Lithography (집속이온빔 리소그라피 (Focused Ion Beam Lithography)외 노출 및 현상에 대한 몬데칼로 전산 모사)

  • Lee, Hyun-Yong;Kim, Min-Su;Chung, Hong-Bay
    • Proceedings of the KIEE Conference
    • /
    • 1994.07b
    • /
    • pp.1246-1249
    • /
    • 1994
  • Thin amorphous film of $a-Se_{75}Ge_{25}$ acts as a positive resist in ion beam lithography. Previously, we reported the optical characteristics of amorphous $Se_{75}Ge_{25}$ thin film by the low-energy ion beam exposure and presented analytically calculated values such as ion range, ion concentration and ion transmission coefficient, etc. As the calculated results of analytical calculation, the energy loss per unit distance by $Ga^+$ ion is about $10^3[keV/{\mu}m]$ and nearly constant for all energy range. Especially, the projected range and struggling for 80 [KeV] $Ga^+$ ion energy are 0.0425[${\mu}m$] and 0.020[${\mu}m$], respectively. Hear, we present the results of Monte-Carlo computer simulation of Ga ion scattering, exposure and development in $a-Se_{75}Ge_{25}$ resist film for focused ion beam(FIB) lithography. Monte-Carlo method is based on the simulation of individual particles through their successive collisions with resist atoms. By the summation of the scattering events occurring in a large number N(N>10000) of simulated trajectories within the resist, the distribution for the range parameters is obtained. Also, the deposited energy density and the development pattern by a Gaussian or a rectangular ion beam exposure can be obtained.

  • PDF

Transmission Electron Microscope Specimen Preparation of Si-Based Anode Materials for Li-Ion Battery by Using Focused Ion Beam and Ultramicrotome

  • Chae, Jeong Eun;Yang, Jun Mo;Kim, Sung Soo;Park, Ju Cheol
    • Applied Microscopy
    • /
    • v.48 no.2
    • /
    • pp.49-53
    • /
    • 2018
  • A successful transmission electron microscope (TEM) analysis is closely related to the preparation of the TEM specimen and should be followed by the suitable TEM specimen preparation depending on the purpose of analysis and the subject materials. In the case of the Si-based anode material, lithium atoms of formed Li silicide were removed due to ion beam and electron beam during TEM specimen preparation and TEM observation. To overcome the problem, we proposed a new technique to make a TEM specimen without the ion beam damage. In this study, two types of test specimens from the Si-based anode material of Li-ion battery were prepared by respectively adopting the only focused ion beam (FIB) method and the new FIB-ultramicrotome method. TEM analyses of two samples were conducted to compare the Ga ion damage of the test specimen.

Control the length of beam trajectory with a quadruple triplet for heavy ion accelerator

  • Wei, Shaoqing;Zhang, Zhan;Lee, Sangjin;Kim, Do Gyun;Kim, Jang Youl
    • Progress in Superconductivity and Cryogenics
    • /
    • v.18 no.4
    • /
    • pp.40-43
    • /
    • 2016
  • Beam trajectory is needed to be controlled in heavy ion accelerator system. Quadruple magnets are widely used in heavy ion accelerator for focusing the transporting particles. A quadruple triplet system which consists of three consecutive quadrupoles, Q1, Q2 and Q3, is used to control beam trajectory at a focused position. Q1 and Q3 have symmetry with respect to Q2. The beam trajectory in magnet system is affected by higher order fields existed in real fields. For quadrupoles, the representation simulation of beam trajectory was carried out to study the beam trajectory and to estimate an effect of higher order field in triplet system. SCALA program was used to simulate the beam trajectory in $Opera^{TM}$. SCALA can analyze a large number of beam trajectories at the same time by adjusting the size of finite element of the emitter. With $Opera^{TM}$ and $Matlab^{TM}$ programs, the position of focused beam spot in quadruple triplet system can be increased or decreased using evolution strategy (ES) method, therefore the length of triplet system can be controlled. Finally, the quadruple triplet system with the appropriate length and expected beam spot range was suggested in this paper.