• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.11a
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• pp.413-417
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• 1997

In this study, chlorine(Cl)-based gas chemistry is generally used to etching for AlCu films metallization. The corrosion phenomena of AlCu films were examined with XPS (X-ray photoelectron spectroscopy), SEM (Scanning electron microscopy), and TEM (Transmission electron microscopy). SF$\sub$6/ plasma treatment subsequent to the etch process prevents the corrosion effectively in the pressure of 300 mTorr. It is found that the chlorine atoms on the etched surface are not substituted for fluorine atoms during SF$\sub$6/ treatment, but a passivation layer on the surface by fluorine-related compounds would be formed. The passivation layer prevents the moisture penetration on the SF$\sub$6/ treated surface and suppresses the corrosion successfully.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.3
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• pp.63-67
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• 2001

Up to now, most studies about Pt-etching have been focused on physical sputtering mechanism with Cl-based plasma, while only a limited results are available for etching characteristics with fluorine-based plasma. In this study, etch characteristics of Pt thin film with $Cl_2$/Ar and $SF_{6}$/Ar Ar gas chemistries have been studied with ECR plasma etching system. It is confirmed that $SF_{6}$/Ar Ar plasma chemistry could make volatile etch-products through the reaction with Pt thin film. Also the improvement in etch rate, etch profile and surface roughness is obtained due to the formation of volatile platinum fluoride compounds.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.11
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• pp.911-914
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• 2011

We optimize electrical and optical properties of thermal and SF6 plasma treated indium tin oxide (ITO)/Al based reflector for high-power ultraviolet (UV) light-emitting diodes (LEDs). After thermal and $SF_6$ plasma treatments of ITO/Al reflector, the specific contact resistance decreased from $1.04{\times}10^{-3}\;{\Omega}{\cdot}cm^2$ to $9.21{\times}10^{-4}\;{\Omega}{\cdot}cm^2$, while the reflectance increased from 58% to 70% at the 365 nm wavelength. The low resistance and high reflectance of ITO/Al reflector are attributed to the reduced Schottky barrier height (SBH) between the ITO and AlGaN by large electronegativity of fluorine species and reduced interface roughness between the ITO and Al, respectively.

• Korean Journal of Materials Research
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• v.33 no.4
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• pp.124-129
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• 2023

This study assessed the influences of fluorine introduced into DLC films on the structural and mechanical properties of the sample. In addition, the effects of the fluorine incorporation on the compressive stress in DLC films were investigated. For this purpose, fluorinated diamond-like carbon (F-DLC) films were deposited on cobalt-chromium-molybdenum substrates using radio-frequency plasma-enhanced chemical vapor. The coatings were examined by Raman scattering (RS), Attenuated total reflectance Fourier transform infrared spectroscopic analysis (ATR-FTIR), and a combination of elastic recoil detection analysis and Rutherford backscattering (ERDA-RBS). Nano-indentation tests were performed to measure hardness. Also, the residual stress of the films was calculated by the Stony equation. The ATR-FTIR analysis revealed that F was present in the amorphous matrix mainly as C-F and C-F₂ groups. Based on Raman spectroscopy results, it was determined that F made the DLC films more graphitic. Additionally, it was shown that adding F into the DLC coating resulted in weaker mechanical properties and the F-DLC coating exhibited lower stress than DLC films. These effects were attributed to the replacement of strong C = C by feebler C-F bonds in the F-DLC films. F-doping decreased the hardness of the DLC from 11.5 to 8.8 GPa. In addition, with F addition, the compressive stress of the DLC sample decreased from 1 to 0.7 GPa.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.21 no.6
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• pp.230-234
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• 2011

High density plasma etching of ZnO film was performed in $CF_4$/Ar and $SF_6$/Ar inductively coupled plasmas. Maximum etch rates of ~1950 ${\AA}$/min and ~1400 ${\AA}$/min were obtained for $10CF_4$/5Ar and $10SF_6$/5Ar ICP discharges, respectively. The etched ZnO surfaces showed better RMS roughness values than the unetched control sample under most of the conditions examined. In the $10CF_4$/5Ar ICP discharges, very high etch selectivities were obtained for ZnO over Ni (max. 11) while Al showed etch selectivities in the range of 1.6~4.7 to ZnO.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.509-509
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• 2011

Superhydrophobic surfaces on alloyed steels were fabricated with a non-conventional method of plasma etching and subsequent water immersion procedure. High aspect ratio nanopatterns of nanoflake or nano-needle were created on the steels with various Cr content in its composition. With CF4 plasma treatment in radio-frequence chemical vapor deposition (r.-f. CVD) method, steel surfaces were etched and fluorinated by CF4 plasma, which induced the nanopattern evolution through the water immersion process. It was found that fluorine ion played a role as a catalyst to form nanopatterns in water elucidated with XPS and TEM analysis. The hierarchical patterns in micro- and nano scale leads to superhydrophobic properties on the surfaces by deposition of a hydrophobic coating with a-C:H:Si:O film deposited with a gas precursor of hexamethlydisiloxane (HMDSO) with its lower surface energy of 24.2 mN/m, similar to that of curticular wax covering lotus surfaces. Since this method is based on plasma dry etching & coating, precise patterning of surface texturing would be potential on steel or metal surfaces. Patterned hydrophobic steel surfaces were demonstrated by mimicking the Robinia pseudoacacia or acacia leaf, on which water was collected from the humid air using a patterned hydrophobicity on the steels. It is expected that this facile, non-toxic and fast technique would accelerate the large-scale production of superhydrophobic engineering materials with industrial applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.49.1-49.1
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• 2010

The particle generation during the plasma enhanced process is highly considered as serious problem in the semiconductor manufacturing industry. The material for the plasma processing chamber requires the plasma etching characteristics which are homogeneously etched surface and low plasma etching depth for preventing particulate contamination and high durability. We found that the materials without grain boundaries can prevent the particle generation. Therefore, the amorphous material with the low plasma etching rate may be the best candidate for the plasma processing chamber instead of the polycrystalline materials such as yttria and alumina. Three glasses based on $SiO_2$ and $Al_2O_3$ were prepared with various rare-earth elements (Gd, Y and La) which are same content in the glass. The glasses were plasma etched in the same condition and their plasma etching rate was compared including reference materials such as Si-wafer, quartz, yttria and alumina. The mechanical and thermal properties of the glasses were highly related with cationic field strength (CFS) of the rare-earth elements. We assumed that the plasma etching resistance may highly contributed by the thermal properties of the fluorine byproducts generated during the plasma exposure and it is expected that the Gd containing glass may have the highest plasma etching resistance due to the highest sublimation temperature of $GdF_3$ among three rare-earth elements (Gd, Y and La). However, it is found that the plasma etching results is highly related with the mechanical property of the glasses which indicates the cationic field strength. From the result, we conclude that the glass structure should be analyzed and the plasma etching test should be conducted with different condition in the future to understand the plasma etching behavior of the glasses perfectly.

• Korean Journal of Materials Research
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• v.10 no.6
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• pp.450-455
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• 2000

For further scaling down of the silicon devices, the application of low dielectric constant materials instead of silicon oxide has been considered to reduce power consumption, crosstalk, and interconnection delay. In this paper, the effect of $O_2/SF_6$ plasma chemistry on the etching characteristics of polyimide-one of the promising low-k interlayer dielectrics-has been studied. The etch rate of polyimide decreases with the addition of $SF_6$ gas due to formation of nonvolatile fluorine compounds inhibiting reaction between oxygen and hydrocarbon polymer, while applying substrate bias enhances etching process through physical attack. However, addition of small amount of $SF_6$ is desirable for etching topography. $SiO_2$ hard mask for polyimide etching is effective under $O_2$plasma etching(selectivity~30), while $O_2/SF_6$ chemistry degrades etching selectivity down to 4. Based on the above results, $1-2\mu\textrm{m}$ L&S PI2610 patterns were successfully etched.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.3
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• pp.25-29
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• 2014

Plasma organic thin film for PCB surface finish is a potential replacement of the conventional PCB finishes because of environment-friendly process, high corrosion-resistance and long shelf life over 1 year. In this study, solder joint properties of the plasma organic surface finish were estimated and compared with OSP surface finish. The plasma surface finish was deposited by chemical vapor deposition from fluorine-based precursors. The thickness of the plasma organic coating was 20 nm. Sn-3.0Ag-0.5Cu (SAC305) solder was used as solder joint materials. From a salt spray test, the plasma organic coating had higher corrosion resistance than the OSP surface finish. The spreadability of SAC305 on plasma organic coating was higher than that on OSP surface finish. SEM and TEM micrographs showed that the interfacial microstructure of the plasma surface finish sample were similar to that of the OSP sample. Solder joint strength of the plasma finish sample was also similar to that of the OSP finished sample.

• Journal of Advanced Marine Engineering and Technology
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• v.32 no.8
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• pp.1178-1184
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• 2008

In this study, techniques of ion implantation were used in order to improve the characteristics of metal materials such as the oxidation and wear resistant. In particular it is necessary to develope their oxidation and wear resistant that could be used in severe environmental conditions. There are mainly two elementary technologies including ion implantation and/or thin film coating. Ion implantation method was performed for surface modification. As a result, it was found that some ion implantations methods such as Nb, high-temperature Nb ion implantation and Nb+C combined implantation are somewhat effective for improving the oxidation resistance of TiAl alloy. Furthermore, the fluorine PBII treatment is more effective for improving the oxidation resistance of the TiAl alloy with three-dimensional shapes. The implantation of boron ion into thin film of TiN was also effective for improving the properties of materials like high temperature wear resistance. TiCrN film was applied to the actual seal ring for steam turbines, and it was observed that its sliding property showed a successfully good performance.