• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
• /
• pp.209-212
• /
• 2001

Polyimide(PI) films have been considered as the interlayer dielectric materials due to low dielectric constant, low water absorption, high gap-fill and planarization capability. The PI mm Was etched with using inductively coupled plasma (ICP). The etching characteristics such as etch rate and selectivity were evaluated to gas mixing ratio. High etch rate was $8300{\AA}/min$ and vertical profile was approximately acquired $90^{\circ}$ at $CF_{4}/(CF_{4}+O_{2})$ of 0.2. The selectivies of polyimide to PR and $SiO_{2}$ were 1.2, 5.9, respectively. The etching profiles of PI films with an aluminum pattern were measured by a scanning electron microscope (SEM). The chemical states on the PI film surface were investigated by x-ray photoelectron spectroscopy (XPS). Radical densities of oxygen and fluorine in different gas mixing ratio of $O_{2}/CF_{4}$ were investigated by optical emission spectrometer (OES).

• 대한금속재료학회지
• /
• 제48권11호
• /
• pp.1028-1034
• /
• 2010

In the development of 3D package, through silicon via (TSV) formation technology by using deep reactive ion etching (DRIE) is one of the key processes. We performed the Bosch process, which consists of sequentially alternating the etch and passivation steps using $SF_6$ with $O_2$ and $C_4F_8$ plasma, respectively. We investigated the effect of changing variables on vias: the gas flow time, the ratio of $O_2$ gas, source and bias power, and process time. Each parameter plays a critical role in obtaining a specified via profile. Analysis of via profiles shows that the gas flow time is the most critical process parameter. A high source power accelerated more etchant species fluorine ions toward the silicon wafer and improved their directionality. With $O_2$ gas addition, there is an optimized condition to form the desired vertical interconnection. Overall, the etching rate decreased when the process time was longer.

• 한국표면공학회지
• /
• 제54권6호
• /
• pp.357-364
• /
• 2021

In this study, DLC films deposited by PECVD were evaluated to the properties of super-hydrophobic by CF₄ treatment. The structure of DLC films were confirmed by Raman Spectra whether or not mixed sp³ (like diamond) peak and sp² (like graphite) peak. And the hydrogen contents in the DLC films (F-DLC) were measured by RBS analysis. In addition, DLC films were analyzed by scratch test for adhesion, nano-indentation for hardness and tribo-meter of Ball-on-disc type for friction coefficient. In the result of analysis, DLC films had traditional structure regardless of variation of hardness at constant conditions. Also adhesion of DLC film was increased as higher material hardness. Otherwise, friction coefficient was increased as lower material hardness. The DLC films were treated by CF₄ plasma treatment to enhance the properties of super-hydrophobic. And the DLC films were measured by ESEM(Enviromental Scanning Electron Microscope) for water condensation.

• 공업화학
• /
• 제32권1호
• /
• pp.55-60
• /
• 2021

실내 환경 오염물질인 휘발성 유기화합물(volatile organic compounds)인 초산에 대한 핏치계 활성탄소섬유의 흡착 성능을 향상시키기 위해 불소화를 진행하였다. 불소화에는 플라즈마 불소화와 직접 기상 불소화법을 사용하였으며, 두 가지 방식으로 불소화한 활성탄소섬유의 초산가스 흡착 성능을 고찰하였다. 불소가 도입된 활성탄소섬유의 표면 특성을 알아보기 위하여 X선 광전자 분광법(XPS)을 분석하였고 그 기공특성은 77K 질소 흡착법을 통하여 분석하였다. 초산가스의 흡착 성능은 가스 크로마토그래피를 통하여 측정하였으며, 플라즈마 불소화 된 활성탄소섬유의 파과시간이 790 min으로 650 min인 미처리 활성탄소섬유에 비해 파과시간이 지연되었음을 확인할 수 있으나, 직접 기상 불소화 표면처리한 활성탄소섬유의 파과시간은 390 min으로 오히려 흡착성능이 저해되었다. 이는 플라즈마 불소화 된 활성탄소섬유는 그 비표면적의 변화 없이, 표면에 도입된 불소 관능기가 초산가스(CH3COOH)와 정전기적 인력으로 흡착성능이 증가하였다. 반면, 직접 기상 불소화 된 활성탄소섬유는 그 비표면적이 55%까지 크게 감소하여 초산가스에 대한 물리적 흡착 효과가 현저히 감소하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.141.2-141.2
• /
• 2015

교류임피던스 측정기법을 이용하여 전기화학적으로 외부환경에서 소재 금속까지 물질 및 전하이동에 관한 임피던스 측정이 가능하며 도막의 부식 및 노화정도 및 내식성의 평가가 가능하여 산업체에서 널리 이용되고 있다. RPCS(Remote Plasma Cleaning Source)는 패널 및 반도체 제조공정에서 CVD 증착공정 후 챔버 내부에 입혀지는 Si(실리콘)을 화학적으로 세정하기 위한 F(불소) Radical을 공급하는 원격 고밀도 플라즈마를 발생시키는 제품이다. RPCS의 바디는 알루미늄을 사용하고 절연 및 플라즈마에 대한 내구성을 확보하기 위해 아노다이징 코팅을 한다. 반응기 내벽의 표면이 공정 플라즈마에 노출될 때 소재는 화학적으로 매우 활성이 높은 라디칼과의 반응뿐만 아니라 이온의 충격을 동시에 받게 되며 이 과정에서 다량의 불소 (Fluorine) 라디칼과 전계에 반응한 이온의 운동에 노출되면서 아노다이징 코팅이 손상되는데 이는 기기의 수명 단축 및 파티클을 발생시키며, Arc의 원인이 되기도 한다. 실제 사용 환경에서는 기기의 분해 없이 아노다이징의 상태를 주기적으로 모니터링 하기가 대단히 어려워, 정기적으로 교체하고 있는 실정이다. 본 연구에서는 RPCS내 발생된 플라즈마 현상을 컨덕터로 활용하여 고주파 리액턴스를 임피던스로 환산하여 아노다이징 코팅의 손상 정도를 진단 및 모니터링하였다. 아노다이징이 손상된 내부 블럭과 정상상태인 내부 블럭의 임피던스를 비교하였고, 아노다이징 두께별 임피던스를 측정하였다. 그 결과 아노다이징 절연막이 손상된 블록의 임피던스가 정상 블록에 비해 낮았으며 두께별 임피던스도 비례함을 알 수 있었다. 향후에는 장기간 현장에서 축척되어진 시험데이터를 바탕으로 아노다이징 코팅의 수명예측진단 시스템을 구축하고자 한다.

• Journal of Yeungnam Medical Science
• /
• 제32권2호
• /
• pp.132-137
• /
• 2015

Adrenocorticotropic hormone (ACTH)-producing pheochromocytoma has been rarely reported, whereas only a few cases of Cushing syndrome accompanied by opportunistic infections have been reported. We experienced a patient with pheochromocytoma with ectopic Cushing syndrome complicated by invasive aspergillosis. A 35-year-old woman presented with typical Cushingoid features. Her basal plasma cortisol, ACTH, and 24-hour urine free cortisol levels were significantly high, and 24-hour urine metanephrine and catecholamine levels were slightly elevated. The endogeneous cortisol secretion was not suppressed by either low- or high-dose dexamethasone. Abdominal computed tomography (CT) revealed a heterogeneous enhancing mass measuring approximately 2.5 cm in size in the left adrenal gland. No definitive mass lesion was observed on sellar magnetic resonance imaging. On fluorine-18 fluorodeoxyglucose positron emission tomography/CT, a hypermetabolic nodule was observed in the left upper lung. Thus, we performed a percutaneous needle biopsy, which revealed inflammation, not malignancy. Thereafter, we performed a laparoscopic left adrenalectomy, and its pathologic finding was a pheochromocytoma with positive immunohistostaining for ACTH. After surgery, the biochemistry was normalized, but the clinical course was fatal despite intensive care because of the invasive aspergillosis that included the lungs, retina, and central nervous system.

• Current Photovoltaic Research
• /
• 제7권4호
• /
• pp.97-102
• /
• 2019

Bifacial and semitransparent hydrogenated amorphous silicon (a-Si:H) thin-film solar cells in p-i-n configuration were prepared with front and rear transparent conducting oxide (TCO) electrodes using plasma-enhanced chemical vapor deposition method. Fluorine-doped tin oxide and tin-doped indium oxide films were used as front and rear TCO contacts, respectively. Film thickness of intrinsic a-Si:H absorber layers were controlled from 150 nm to 450 nm by changing deposition time. The dependence of performance characteristics of solar cells on the front and rear illumination direction were investigated. For front illumination, gradual increase in the short-circuit current density (J_SC) from 10.59 mA/㎠ to 14.19 mA/㎠ was obtained, whereas slight decreases from 0.83 V to 0.81 V for the open-circuit voltage (V_OC) and from 68.43% to 65.75% for fill factor (FF) were observed. The average optical transmittance in the wavelength region of 380 ~ 780 nm of the solar cells decreased gradually from 22.76% to 15.67% as the absorber thickness was changed from 150 nm to 450 nm. In case of the solar cells under rear illumination condition, the J_SC increased from 10.81 to 12.64 mA/㎠ and the FF deceased from 66.63% to 61.85%, while the V_OC values were maintained at 0.80 V with increasing the absorber thickness from 150 nm to 450 nm. By optimizing the deposition parameters, a high-quality bifacial and semitransparent a-Si:H solar cell with 350 nm-thick i-a-Si:H absorber layer exhibited the conversion efficiencies of 7.69% for front illumination and 6.40% for rear illumination, and average visible optical transmittance of 17.20%.