• 제목/요약/키워드: Fluorides

검색결과 81건 처리시간 0.019초

불소화합물의 골육종 및 구강암 세포주에 대한 독성의 비교분석 (Comparative Analysis of Cytotoxicity of Fluoride Compounds on Oral Cancer and Osteosarcoma Cells)

  • 송제선;이백수;김정희
    • Environmental Analysis Health and Toxicology
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    • 제14권3호
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    • pp.113-120
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    • 1999
  • Fluorination of drinking water has been used world widely to reduce the incidence of caries. Recently, contradictory results on the cytotoxicity of fluoride compounds are reported. In addition, there are attempts to use fluorosilicate for fluorination of drinking water in Korea, therefore, we tried to analyze the cytotoxicity of fluoride compounds on oral epidermoid carcinoma (KB and A253) and osteosarcoma (HOS and MG-63) cells in this study. We treated cells with 0, 10, 50 and 250 ppm of fluorosilicic acid (domestic or from Fluka, F$\_$6/H$_2$Si), sodium fluorosilicate (F$\_$6/Na$_2$Si), sodium fluoroacetate (FCH$_2$CO$_2$Na), sodium fluoride (NaF) or potassium fluoride(KF) and measured the relative cell survival by MTT assay. At the concentration of < 10ppm, no significant cytotoxicity was observed. At 50 ppm, each cells revealed different response to fluoride treatment. Among cells used in this study, MG-63 was the most resistant to fluoride treatment. Comparable toxicity data from domestic and imported fluorosilicic acids were obtained. When we compared the relative cytotoxicity of fluoride compounds against their fluoride contents, the differences in relative cell survival were smaller. Most of cells showed < 20% of survival at 250 ppm. In order to analyze the pH dependence of the cytotoxicity of fluorosilicates, the pH of cell culture media containing fluorosilicate was adjusted to 7.4 or 6.5 and the relative cytotoxicity was measured. At lower pH, about 10% higher cytotoxicity was obtained. Thus, our data suggested that the toxicity of domestic fluorosilicic acid was similar to that of fluorosilicic acid from Fluka, and the cytotoxicity of fluoride compounds was dependent on the relative content of fluoride and pH.

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구미 불산 누출사고 지점 주변 식물의 불소화합물 농도 분포 및 공기 중 불화수소 농도 추정에 관한 연구 (Study on the Distribution of Fluorides in Plants and the Estimation of Ambient Concentration of Hydrogen Fluoride Around the Area of the Accidental Release of Hydrogen Fluoride in Gumi)

  • 구슬기;최인자;김원;선옥남;김신범;이윤근
    • 한국환경보건학회지
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    • 제39권4호
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    • pp.346-353
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    • 2013
  • Objectives: The goal of this study is to identify the distribution of the foliar fluorine content of vegetation surrounding the area where hydrofluoric acid was accidently released in Gumi, Gyeongsangbuk-do on September 27, 2012. In addition, it also aims to estimate the concentration of hydrogen fluoride in the air on the day of the accident. Methods: Samples of plant leaves were collected on October 7, 2012 within 1 km from the site where the accident occurred. These samples were analyzed for soluble fluorine ion with an ion selective electrode. The ambient concentration of hydrogen fluoride was calculated using the fluoride content in the plant via the dose-rate equation (${\Delta}F$=KCT). Results: The arithmetic and geometric means of the concentrations were 2158.2 and 1183.7mg F $kg^{-1}$ for leaves and, 2.4 and 1.1 ppm HF for the air, respectively. The highest concentration of hydrogen fluoride in the air was 14.7 ppm, which is higher than the maximum concentration reported by the government (1 ppm) and the exposure limit (ceiling, 3 ppm). The concentrations of both fluorine and hydrogen fluoride decreased with increasing distance from the accident site and showed a significant decrease outside of a 500m radius from the site (p <0.05). Conclusions: The area around the accident site was highly polluted with hydrogen fluoride according to the results of this study. Considering the persistency of hydrogen fluoride in the environment, long-term monitoring and environmental impact assessment should be pursued.

Hybrid neutralization and membrane process for fluoride removal from an industrial effluent

  • Meftah, Nouha;Ezzeddine, Abdessalem;Bedoui, Ahmed;Hannachi, Ahmed
    • Membrane and Water Treatment
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    • 제11권4호
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    • pp.303-312
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    • 2020
  • This study aims to investigate at a laboratory scale fluorides removal from an industrial wastewater having excessive F- concentration through a hybrid process combining neutralization and membrane separation. For the membrane separation operation, both Reverse Osmosis (RO) and Nanofiltration (NF) were investigated and confronted. The optimized neutralization step with hydrated lime allowed reaching fluoride removal rates of 99.1± 0.4 %. To simulate continuous process, consecutive batch treatments with full recirculation of membrane process brines were conducted. Despite the relatively high super saturations with respect to CaF2, no membrane cloaking was observed. The RO polishing treatment allowed decreasing the permeate fluoride concentration to 0.9± 0.3 mg/L with a fluoride rejection rate of 93± 2% at the optimal transmembrane pressure of around 100 psi. When NF membrane was used to treat neutralization filtrate, the permeate fluoride concentration dropped to 1.1± 0.4 mg/L with a fluoride rejection rate of 88± 5% at the optimal pressure of around 80 psi. Thus, with respect to RO, NF allowed roughly 20% decrease of the driving pressure at the expense of only 5% drop of rejection rate. Both NF and RO permeates at optimal operating transmembrane pressures respect environmental regulations for reject streams discharge into the environment.

$CF_4$/Ar 가스 플라즈마를 이용한 $YMnO_3$ 박막의 식각 반응연구 (Etching Mechanism of $YMnO_3$ Thin Films in High Density $CF_4$/Ar Plasma)

  • 김동표;김창일;이철인
    • 한국전기전자재료학회논문지
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    • 제14권12호
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    • pp.959-964
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    • 2001
  • We investigated the etching characteristics of YMnO$_3$ thin films in high-density plasma etching system. In this study, YMnO$_3$ thin films were etched with CF$_4$/Ar gas chemistries in inductively coupled plasma(ICP). Etch rates of YMnO$_3$ increased up to 20% CF$_4$ in CF$_4$/(CF$_4$+Ar), but decreased with furthermore increasing CF$_4$ in CF$_4$/(CF$_4$+Ar). In optical emission spectroscopy (OES) analysis, F radical and Ar* ions in plasma at various gas chemistries decreased with increasing CF$_4$ content. Chemical states of YMnO$_3$ films exposed in plasma were investigated with x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). There is a chemical reaction between metal (Y, Mn) and F and metal-fluorides were removed effectively by Ar ion sputtering. YF$_{x}$, MnF$_{x}$ such as YF, YF$_2$, YF$_3$ and MnF$_3$ were detected using SIMS analysis. The etch slope is about 65$^{\circ}$ and cleasn surface. surface of the etched YMnO$_3$ thin films was investigated with X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS). The etch profile was also investigated by scanning electron microscopy (SEM).EM).

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저불산 불소계 화합물 수용액을 이용한 글라스 박판화 (Glass Thinning by Fluoride Based Compounds Solution with Low Hydrofluoric acid Concentration)

  • 김호태;강동구;김진배
    • 공업화학
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    • 제20권5호
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    • pp.557-560
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    • 2009
  • 본 연구에서는 글라스를 $100{\mu}m$ 이하의 두께로 박판화하기 위한 새로운 습식 에칭방법 및 에칭 용액을 검토하였다. $NH_4F$ 또는 $NH_4HF_2$를 주성분으로 황산 또는 질산을 첨가한 경우 에칭 용액의 불산 함유량을 저감하는 데에 효과가 있었다. 혼산 용액의 조성과 온도의 영향을 검토하였으며, 음이온계 계면활성제의 첨가는 에칭반응에 의해 생성되는 슬러지의 부착을 억제해주는 효과가 있었다. 수류 발생부를 가지는 새로운 파일럿 장비를 사용하여 상용 무알칼리 글라스와 소다라임 글라스의 에칭 실험을 실시하였다. $640{\mu}m$ 두께의 무알칼리 글라스를 $45{\mu}m$ 두께로 $500{\mu}m$ 두께의 소다라임 글라스를 $100{\mu}m$ 두께로 박판화하였으며, 에칭 후의 표면 조도는 $0.01{\sim}0.02{\mu}m$를 유지하였다.

전자빔 증발원을 이용한 물질의 증발 특성 (Evaporation Characteristics of Materials from an Electron Beam Evaporation Source)

  • 정재인;양지훈;박혜선;정재훈;송민아
    • 한국표면공학회지
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    • 제44권4호
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    • pp.155-164
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    • 2011
  • Electron beam evaporation source is widely used to prepare thin films by physical vapor deposition because it is very effective to vaporize materials and there is virtually no limit to vaporize materials including metals and compounds such as oxide. In this study, evaporation characteristics of various metals and compounds from an electron beam evaporation source have been studied. The 180 degree deflection type electron beam evaporation source which has 6-hearth crucibles and is capable of inputting power up to 10 kW was employed for evaporation experiment. 36 materials including metals, oxides and fluorides have been tested and described in terms of optimum crucible liner, evaporation state, stability, and so on. Various crucible liners have been tried to find out the most effective way to vaporize materials. Two types of crucible liners have been employed in this experiment. One is contact type liner, and the other is non-contact type one. It has been tried to give the objective information and the most effective evaporation method on the evaporation of materials from the electron beam evaporation source. It is concluded that the electron beam evaporation source can be used to prepare good quality films by choosing the appropriate crucible liner.

$Ar/CF_{4}$ 유도결합 플라즈마에서 식각된 $(Ba_{0.6}Sr_{0.4})TiO_{3}$ 박막의 손상 감소 (Study on Damage Reduction of $(Ba_{0.6}Sr_{0.4})TiO_{3}$ Thin Films in $Ar/CF_{4}$ Plasma)

  • 강필승;김경태;김동표;김창일;황진호;김태형
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.171-174
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    • 2002
  • The barium strontium titannate (BST) thin films were etched in $CF_{4}/Ar$ inductively coupled plasma (ICP). The high etch rate obtained at a $CF_{4}(20%)/Ar(80%)$ and the etch rate in pure argon was twice higher than that in pure $CF_{4}$. This indicated that BST etching is sputter dominant process. It is impossible to avoid plasma-induced damages by the energetic particles in the plasma and the nonvolatile etch products. The plasma damages were evaluated in terms of leakage current density, residues on the etched sample, and the changes of roughness. After the BST thin films exposed in the plasma, the leakage current density and roughness increases. In addition, there are appeared a nonvolatile etch byproductsand from the result of X-ray photoelectron spectroscopy (XPS). After annealing at ${600^{\circ}C}$ for 10 min in $O_{2}$ ambient, the increased leakage current density, roughness and nonvolatile etch byproducts reduced. From the this results, the plasma induced damage recovered by annealing process owing to the relaxation of lattice mismatches by Ar ions and the desorption of metal fluorides in high temperature.

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불소 제재가 심미 수복 재료의 표면 구조에 미치는 영향 (THE EFFECT OF TOPICAL FLUORIDES ON SURFACE STRUCTURES OF VARIOUS ESTHETIC RESTORATIVE MATERIALS)

  • 김은영;최병재
    • 대한소아치과학회지
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    • 제24권2호
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    • pp.436-448
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    • 1997
  • Topical fluoride application for children is a widely performed procedure in the field of Pediatric Dentistry for its dental caries prevention effects. However, it is recently recognized as having some unwanted effects on several esthetic restorative materials as it roughens the surfaces of the restorative materials. In order to evaluate the surface changes in esthetic restorative materials, the author immersed composite resin, glass ionomer cement, and resin-modified glass ionomer cement specimens in various topical fluoride agents and measured the weight loss and also, examined the specimens under the scanning electron microscope. The followings are the results : 1. All the specimens immersed in APF gel for 4 minutes showed statistically significant weight loss. (paired t-test, P<0.05). 2. There was no statistically significant weight loss for the resin-modified glass ionomer cement and composite resin groups immersed in sodium fluoride solution (paired t-test, P>0.05). 3. When the glass ionomer cement group was immersed in APF gel for 1 and 4 minutes, there was a statistically significant weight loss compare to other esthetic restorative materials (ANOVA, P<0.05). 4. In the resin-modified glass ionomer cement group and the composite resin group, weight loss in the APF gel 4 minutes immersion group was greater than the 1 minute immersion group, and it was statistically significant (ANOVA, P<0.05). 5. When the specimens were examined under scanning electron microscope, the surface changes were greatest in the order of glass ionomer cement, resin-modified glass ionomer cement, composite resin and also in the order of APF gel 4 minute immersion group, 1 minute immersion group, sodium fluoride immersion group, and control group.

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Do conventional glass ionomer cements release more fluoride than resin-modified glass ionomer cements?

  • Cabral, Maria Fernanda Costa;Martinho, Roberto Luiz de Menezes;Guedes-Neto, Manoel Valcacio;Rebelo, Maria Augusta Bessa;Pontes, Danielson Guedes;Cohen-Carneiro, Flavia
    • Restorative Dentistry and Endodontics
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    • 제40권3호
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    • pp.209-215
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    • 2015
  • Objectives: The aim of this study was to evaluate the fluoride release of conventional glass ionomer cements (GICs) and resin-modified GICs. Materials and Methods: The cements were grouped as follows: G1 (Vidrion R, SS White), G2 (Vitro Fil, DFL), G3 (Vitro Molar, DFL), G4 (Bioglass R, Biodinamica), and G5 (Ketac Fil, 3M ESPE), as conventional GICs, and G6 (Vitremer, 3M ESPE), G7 (Vitro Fil LC, DFL), and G8 (Resiglass, Biodinamica) as resin-modified GICs. Six specimens (8.60 mm in diameter; 1.65 mm in thickness) of each material were prepared using a stainless steel mold. The specimens were immersed in a demineralizing solution (pH 4.3) for 6 hr and a remineralizing solution (pH 7.0) for 18 hr a day. The fluoride ions were measured for 15 days. Analysis of variance (ANOVA) and Tukey's test with 5% significance were applied. Results: The highest amounts of fluoride release were found during the first 24 hr for all cements, decreasing abruptly on day 2, and reaching gradually decreasing levels on day 7. Based on these results, the decreasing scale of fluoride release was as follows: G2 > G3 > G8 = G4 = G7 > G6 = G1 > G5 (p < 0.05). Conclusions: There were wide variations among the materials in terms of the cumulative amount of fluoride ion released, and the amount of fluoride release could not be attributed to the category of cement, that is, conventional GICs or resin-modified GICs.

유도결합 CF4/Ar 플라즈마에 의한 Bi4-xLaxTiO3O12 박막의 식각 표면 반응 (Surface Reactions on the Bi4-xLaxTiO3O12 Thin Films Etched in Inductively Coupled CF4/Ar Plasma)

  • 김동표;김경태;김창일
    • 한국전기전자재료학회논문지
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    • 제16권5호
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    • pp.378-384
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    • 2003
  • Etching species in CF$_4$/Ar plasma and the behavior of etching rate of Bi$_4$-$_{x}$L$_{x}$rTi$_3$O$_2$ (BLT) films were investigated in inductively coupled plasma (ICP) reactor in terms of etch parameters. The etching rate as functions of CF$_4$ contents showed the maximum 803 $\AA$/min at 20% CF$_4$ addition in CF$_4$/Ar plasma. The increase of RF power and DC bias voltage caused to an increase of etch rate. The variation of relative volume densities for F and he atoms were measured with the optical emission spectroscopy (OES). The chemical states of BLT were investigated with using X-ray photoelectron spectroscopy (XPS). XPS narrow scan analysis shows that La-fluorides remained on the etched surface. The presence of maximum etch rate at CF$_4$(20%)/Ar(80%) may be explained by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction. The roles of he ion bombardment include destruction of metal (Bi, La, Ti)-O bonds as well as assistant for chemical reaction of metals with fluorine atoms.oms.