• 대한기계학회논문집B
• /
• 제38권11호
• /
• pp.881-887
• /
• 2014

본 연구에서는 micro-gap 판형 열교환기 내부의 열유동 특성에 대한 수치해석을 수행하였다. 특히 유량 조건에 따라 열교환기의 주 채널로부터 각 micro-gap 으로의 유동분배에 대한 유동관성의 영향에 대하여 조사하였다. 열교환기 주 채널의 유동을 레이놀즈 수 100 부터 10000 까지 변화시키며 그에 따른 각 micro-gap 으로의 유동분배와 온도분포의 불균일 정도를 평가하였다. 수치해석 결과 유동분배는 유동관성에 의해 크게 영향을 받는 것으로 나타났으며, 관성 효과를 감소시킬 수 있는 헤더 설계를 통해 유동분배 불균일 정도를 줄일 수 있었다. 또한 micro-gap 을 통과한 유체의 온도분포의 불균일 정도는 주유량이 증가함에 따라 증가 후 감소 추세를 나타냈다.

• 대한기계학회:학술대회논문집
• /
• 대한기계학회 2003년도 추계학술대회
• /
• pp.67-72
• /
• 2003

Numerical calculation has been performed to investigate the effect of inlet configuration on the growth rate of GaN layer on the heated susceptor. The conventional single inlet, where the gas is mixed by force in the inlet, is compared with separated flow inlet. Two-parallel gas flow $H_{2}$ and $NH_{3}$ are separated by a plate with finite length which are also parallel to the susceptor. The effect of separated plate length, carrier gas and flow rate of each precursor on the mixing of reactant gases and growth rate were investigated. Furthermore the three dimensional model is employed to predict the transverse variation of growth rate.

• 대한기계학회논문집B
• /
• 제22권5호
• /
• pp.563-572
• /
• 1998

An experimental study of hot filament chemical vapor deposition(HFCVD) has been carried out for the fabrication of diamond thin film. Of particular interest is the measurement of deposition uniformity on large substrates. Experimental apparatus including a vacuum chamber, heating elements, etc. has been designed and manufactured. Deposition profiles for different pretreatment powders and different flow rates have been measured in conjunction with the measurement of substrate temperature distribution on a large substrate surface. As the flow rate increases, deposition rate increases, however, the crystallinity becomes worse. Higher growth rate has been found on the region closer to the center location where substrate temperature is higher. The crystallinity has been improved as gas flow rate decreases. The growth rate and morphology of deposition were identified by SEM and the existence of diamond phase was proved by Raman spectroscopy.

• 한국세라믹학회지
• /
• 제47권3호
• /
• pp.262-267
• /
• 2010

a-SiC has been thought as an ideal candidate for conventional silicon at many applications. However, the uniformity problem of deposition has been a obstacle for conventional use of a-SiC:H films. a-SiC:H films were deposited on (100) silicon wafer by RPECVD system in various temperature. HMDS and $H_2$ gas were used as a precursor and a carrier gas, respectively. The flow rate of HMDS source and $C_2H_2$ dilution gas was fixed in order to study the carbon effect on the film stoichiometric and bonding properties. The plasma power varied from 200 to 400W. We used three types of source delivery line to control the uniformity and film properties of deposited film. We showed that the change of source delivery line has effect on the film uniformity of deposited film and this change of line did not affect on film properties. Also, the change of deposition conditions has effect on the film uniformity.

• 생물환경조절학회지
• /
• 제5권2호
• /
• pp.194-201
• /
• 1996

분구의 구경과 액분산기의 구조가 각각 다른 12종의 미니스프링클러를 대상으로 살수량과 살수강도분포를 실험하여 얻은 주요 결과는 다음과 같다. 미니 스프링클러의 살수량은 분구의 이론 유출량 산출 수식에 의해 예측할 수 있었다. 실험한 스프링클러의 유량계수는 분구구경 증가에 따라 감소하여 그 크기는 분구구경 0.8, 1.2, 1.6mm의 경우 각각 0.90-30.95, 0.80-0.82, 0.76-0.79의 범위로 나타났다. 스프링클러의 살수 분포는 동일한 구조의 스프링클러의 경우 분구구경이 작을 수록 그리고 살수압력이 낮을 수록 균일한 것으로 나타났다. 이러한 스프링클러의 살수분포는 분구구경이나 살수압력 외에도 액분산기의 구조에 따라 크게 영향을 받으므로 액분산기의 구조를 변화하므로서 살수입자의 최대 도달거리나 살수의 균일도를 높일 수 있음을 알 수 있었다.

• 한국전기전자재료학회논문지
• /
• 제17권1호
• /
• pp.1-6
• /
• 2004

Dry etch characteristics of polysilicon with HBr/O$_2$ inductively coupled plasma (ICP) have been investigated. We determined etch late, uniformity, etch profiles, and selectivity with analyzing the cross-sectional scanning electron microscopy images obtained from top, center, bottom, right, and left positions. The etch rate of polysilicon was about 2500 $\AA$/min, which meets with the mass production for devices. The wafer level etch uniformity was within $\pm$5 ％. Etch profile showed 90$^{\circ}$ slopes without notches. The selectivity over photoresist was between 2:1∼4.5:1, depending on $O_2$ flow rate. The HBr-ICP etching showed higher PR selectivity, and sharper profile than the conventional Cl$_2$-RIE.

• 청정기술
• /
• 제26권1호
• /
• pp.22-29
• /
• 2020

최근 미세먼지 증가로 인하여 디젤엔진의 배출 규제가 강화됨에 따라 디젤 매연여과장치에 관심이 급증하게 되었으며, 특히 디젤 배기가스 후처리 장치의 고효율화에 대한 기술개발이 더욱 요구되고 있다. 이에 대한 일환으로서 디젤매연여과장치(diesel particulate filter, DPF) 내 배기가스의 유동 균일도를 향상시키고 배압을 낮추어서 배기가스처리 효율을 높이는 연구가 많이 되고 있다. 본 연구에서는 ANSYS Fluent를 이용하여 직경 12"의 DPF와 디젤산화촉매(diesel oxidation catalyst, DOC)를 장착한 디젤 매연여과장치에서의 배기가스의 유속과 온도, DPF IO ratio, Ash와 PM양에 따른 배압에 미치는 영향을 시뮬레이션 하여 배압을 낮추는 최적화 연구를 하였다. 결과로서 배기가스의 온도와 유속이 낮을수록 배압이 낮아졌으며, PM양이 Ash양보다 배압에 더 큰 영향을 주는 것으로 나타냈다. 또한 비대칭 DPF가 대칭 DPF에 비해 배압이 더 낮게 나타냈으나, 유동 균일도의 경우는 다양한 변수에 관계없이 일정하게 나타냈다. european stationary cycle (ESC), european transient cycle (ETC) 조건에서 PM의 정화효율은 비대칭, 대칭 DPF 관계없이 유사하나, particle number (PN)의 정화효율에서는 비대칭 DPF가 대칭 DPF에 비해 높게 나타냈다.

• E2M - 전기 전자와 첨단 소재
• /
• 제9권9호
• /
• pp.918-924
• /
• 1996

A downstream oxygen plasma is generated by capacitively coupled RF power and applied to photoresist stripping. Stripping rate (ashing rate) is measured in terms of RF power, chamber pressure, oxygen flow rate and temperature. Ashing reaction is thermally activated and depends on oxygen radical density. The ashing process is optimized to have the high ashing rate, good uniformity and minimal plasma damage using a statistical method.

• 전자공학회논문지A
• /
• 제30A권7호
• /
• pp.60-74
• /
• 1993

Experiments of RIE of tungsten films using SF$_{6}$ plasma were conducted to investigate the effect of process parameters on etch rate, uniformity, anisotropy, and selectivity. As power increased, the etch rate increased. Maximum etch rate was obtained at 200mtorr As interelectrode spacing increased the etch rate increased for P < 200mtorr while it decreased for P> 200mtorr. Etch rate was maximum at 20 sccm gas flow rate. As substrate temperature increased, the etch rate increased and activation energy was 0.046 eV. In addition, maximum etch rate was acquired at 20% $O_{2}$ addition. The etch rate slightly increased when Ar was added up to 20% while it continuously decreased when N$_{2}$ was added. Uniformity got improved as pressure decreased and was less than 4% for P <100mtorr. Mass spectrometer was utilized to analyze gas composition and S and F peaks were observed from XPS analysis with increasing power. The anisotropy was better for smaller power and spacing, and lower pressure and temperature. It improved when CH$_{4}$ was added and anisotropic etch profile was obtained when about 10% $O_{2}$ was added. The selectjvity was better for smaller power larger pressure and spacing, and lower temperature. Especially. low temperature processing was proposed as a novel method to improve the anisotropy and selectivity.

• 반도체디스플레이기술학회지
• /
• 제21권3호
• /
• pp.101-104
• /
• 2022

Mist-CVD is known to have advantages of low cost and high productivity compared to ALD and PECVD methods. It is capable of reacting to the substrate by misting an aqueous solution using ultrasonic waves under vacuum-free conditions of atmospheric pressure. In particular, Ga₂O₃ is regarded as advanced power semiconductor material because of its high quality of transmittance, and excellent electrical conductivity through N-type doping. In this study, Computational Fluid Dynamics were used to predict the uniformity of the thin film on a large-area substrate. And also the deposition pattern and uniformity were analyzed using the flow velocity and particle tracking method. The uniformity was confirmed by quantifying the deposition cross section with an FIB-SEM, and the consistency of the uniformity prediction was secured through the analysis of the CFD distribution. With the analysis and experimental results, the match rate of deposition area was 80.14% and the match rate of deposition thickness was 55.32%. As the experimental and analysis results were consistent, it was confirmed that it is possible to predict the deposition thickness uniformity of Mist-CVD.