• 센서학회지
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• 제3권3호
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• pp.3-8
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• 1994

정온발열 특성을 갖는 PTC 써어미스터를 사용하여 유속센서를 제조하였다. $(Ba_{0.7}Sr_{0.3})TiO_{3}$ 분말을 사용하여 PTC 써어미스터를 제조한 후, 유속에 따른 저항률의 변화를 조사하였다. 유속이 0 cm/s에서 5 cm/s로 변할 경우 저항률은 4.45 $k{\Omega}{\cdot}cm$에서 3.95 $k{\Omega}{\cdot}cm$로 변하였다. 유속이 1 cm/s와 5 cm/s일 경우 PTC 써어미스터의 감도는 -204 (${\Omega}{\cdot}cm$)/(cm/s)와 -24 (${\Omega}{\cdot}cm$)/(cm/s)로 나타났다.

• 반도체디스플레이기술학회지
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• 제15권4호
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• pp.46-50
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• 2016

In this study, we have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IGZO thin films for the TCO(transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and $300^{\circ}C$ with various $H_2$ flow rate. In order to investigate the influences of the hydrogen, the flow rate of hydrogen in argon mixing gas has been changed from 0.1sccm to 1.0sccm. IGZO thin films deposited at room temperature show amorphous structure, whereas IGZO thin films deposited at $300^{\circ}C$ show crystalline structure having an (222) preferential orientation. The electrical resistivity of the amorphous-IGZO films deposited at R.T. was lower than that of the crystalline-IGZO thin films deposited at $300^{\circ}C$. The increase of electrical resistivity with increasing substrate temperature was interpreted in terms of the decrease of the charge carrier mobility. The transmittance of the IGZO films deposited at $300^{\circ}C$ was decreased deposited with hydrogen gas.

• 센서학회지
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• 제14권1호
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• pp.52-55
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• 2005

Ni oxide thin films with thermal sensitivity superior to Pt and Ni thin films were formed through annealing treatment after Ni thin films were deposited by a r.f. magnetron sputtering method. Resistivity values of Ni oxide thin films were in the range of $10.5{\mu}{\Omega}cm$ to $2.84{\times}10^{4}{\mu}{\Omega}cm$ according to the degree of Ni oxidation. Also temperature coefficient of resistance(TCR) values of Ni oxide thin films depended on the degree of Ni oxidation from 2,188 ppm/$^{\circ}C$ to 5,630 ppm/$^{\circ}C$ in the temperature range of $0{\sim}150^{\circ}C$. Because of the high linear TCR and resistivity characteristics, Ni oxide thin films exhibit much higher sensitivity to flow and temperature changes than pure Ni thin films and Pt thin films.

• 한국세라믹학회지
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• 제33권5호
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• pp.514-518
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• 1996

Sb doped SnO2(ATO: Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using an oxide target and the electrical characteristics of ATO films were investigated. The experimen-tal conditions are as follows :Ar flow rate ; 0~100 sccm deposition tempera-ture ; 250~40$0^{\circ}C$ DC sputter powder ; 150~550W and sputteing pressure ; 2~7 mTorr, The thickness of depositied ATO films were 600$\AA$~1100 $\AA$ ranges. The resistivity of ATO films was decreased due to the increase of the crystallinity of ATO films with deposition temperature. The decrease of carrier concentration of films with the increase of oxygen flow rate and working pressure is responsible for the increase of resistivity. Increasing of sputtering power raised the resistivity of films by decreasing the carrier mobility.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.260-261
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• 2008

In this study, we investigated the properties of Indium Zinc Oxide (IZO) films prepared in facing targets sputtering (FTS) system at room temperature as function of oxygen contents. As as-deposited films were rapidly thermal annealing on air atmosphere of $400^{\circ}C$ for 30s. As a result, the transmittance of IZO films increased with increasing oxygen flow in the visible range. After rapidly thermal annealing to films, the optical properties of films improved than films deposited at R.T, but the electrical properties decreased. Before RTA treatment, the lowest resistivity IZO is $5.4\times10^{-4}[\Omega{\cdot}cm]$ at oxygen gas flow. But, after RTA treatment, IZO films have the value of lowest resistivity at the lower oxygen gas ratio in compare with before RTA treatment. The resistivity of IZO films is $7.29\times10^{-4}[\Omega{\cdot}cm]$ at pure argon atmosphere.

• 반도체디스플레이기술학회지
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• 제8권1호
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• pp.33-38
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• 2009

We have investigated the effect of the ambient gases on the characteristics of AZO thin films for the OLED (organic light emitting diodes) devices. These AZO thin films are deposited by rf-magnetron sputtering under different ambient gases (Ar, Ar+$O_2$, and Ar+$H_2$) at 300. In order to investigate the influences of the oxygen and hydrogen, the flow rate of oxygen and hydrogen in argon mixing gas has been changed from 0.2sccm to 1sccm and from 0.5sccm to 5sccm, respectively. The AZO thin films were preferred oriented to (002) direction regardless of ambient gases. The electrical resistivity of AZO film increased with increasing flow rate of $O_2$ under Ar+$O_2$ while under Ar+$H_2$ atmosphere the electrical resistivity showed minimum value near 1sccm of $H_2$. All the films showed the average transmittance over 80% in the visible range. The OLED device was fabricated with different AZO substrates made by configuration of AZO/$\acute{a}$-NPD/DPVB/$Alq_3$/LiF/Al to elucidate the performance of AZO substrate.

• Computers and Concrete
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• 제21권3호
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• pp.311-319
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• 2018

This study used a volumetric method for design. The control group used waste Liquid Crystal Displayplay (LCD) glass powder to replace cement (0%, 10%, 20%, 30%), and the PZT group used Pd-Zr-Ti piezoelectric (PZT) powder to replace 5% of the fine aggregate to make cement mortar. The engineering and the mechanical and electricity properties were tested; flow, compressive strength, ultrasonic pulse velocity (UPV), water absorption and resistivity (SSD and OD electricity at 50 V and 100 V) were determined; and the correlations were determined by linear regression. The compressive strength of the control group (29.5-31.8 MPa) was higher than that of the PZT group (25.1-29 MPa) by 2.8-4.4 MPa at the curing age of 28 days. A 20% waste LCD glass powder replacement (31.8 MPa) can fill up finer pores and accelerate hydration. The control group had a higher 50 V-SSD resistivity ($1870-3244{\Omega}.cm$), and the PZT group had a lower resistivity ($1419-3013{\Omega}.cm$), meaning that the resistivity increases with the replacement of waste LCD glass powder. This is because the waste LCD glass powder contains 62% $SiO_2$, which is a low dielectric material that is an insulator. Therefore, the resistivity increases with the $SiO_2$ content.

• Geomechanics and Engineering
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• 제25권4호
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• pp.295-302
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• 2021

Cross-borehole electrical resistivity tomography (ERT) is an effective groundwater detection tool in geophysical investigations. In this paper, an artificial water injection test was conducted on a small clay sample, where the high-resolution cross-borehole ERT was used to investigate the moisture migration law over time. The moisture migration path can be two-dimensionally imaged based on the relationship between resistivity and saturation. The hydraulic conductivity was estimated, and the magnitude ranged from 10^-11 m/s to 10^-9 m/s according to the comparison between the simulation flow and the saturation distribution inferred from ERT. The results indicate that cross-borehole ERT could help determine the resistivity distribution of small size clay samples. Finally, the cross-borehole ERT technique has been applied to investigate the self-sealing characteristics of clay.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 영호남 합동 학술대회 및 춘계학술대회 논문집 센서 박막 기술교육
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• pp.144-145
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• 2006

In this study, the Al doped ZnO thin films were prepared by the facing targets sputtering(FTS) apparatus. The electrical characteristics, transmittance of ITO thin films were investigated as a function of varying input current and oxygen gas flow rate. As a result, the ITO thin film was prepared with a resistivity $6{\times}10-4[{\Omega}-cm]$ and transmittance 80% at visible range.

• 반도체디스플레이기술학회지
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• 제21권1호
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• pp.12-16
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• 2022

We have investigated the effect of the substrate temperature and hydrogen flow rate on the characteristics of IGZO thin films for the TCO (transparent conducting oxide). For this purpose, IGZO thin films were deposited by RF magnetron sputtering at room temperature and 300℃ with various H₂ flow rate. Experiments were carried out while varying the hydrogen gas flow rate from 0sccm to 1.0sccm in order to see how the hydrogen gas affects the IGZO thin films. IGZO thin films deposited at room temperature and 300℃ showed amorphous. The lowest resistivity value was 0.379×10^-5 Ωcm when the IGZO film was deposited at 300℃ and set up at 1.0sccm. As the oxygen vacancy rate increased, the resistivity intended to decrease. In conclusion, Oxygen vacancy affects the IGZO thin film's electrical characteristic.