• IMMUNE NETWORK
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• 제9권2호
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• pp.64-73
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• 2009

Background: 15d-$PGJ_2$ has been known to act as an anti-inflammatory agent and has anti-hypertensive effects. As a result of these properties, we examined the effect of 15d-$PGJ_2$ on the LPS-induced IL-8/CXCL8 mRNA expression in VSMCs from SHR. Methods: Effect and action mechanism of 15d-$PGJ_2$ on the expression of LPS-induced IL-8/CXCL8 mRNA in VSMCs from SHR and WKY were examined by using real-time polymerase chain reaction, electrophoretic mobility shift assay for NF-${\kappa}B$ avtivity, Western blotting analysis for ERK and p38 phosphorylation and flow cytometry for NAD(P)H oxidase activity. Results: 15d-$PGJ_2$ decreased the expression of LPS-induced IL-8/CXCL8 mRNA in WKY VSMCs, but increased the expression of LPS-induced IL-8/CXCL8 mRNA in SHR VSMCs. The upregulatory effect of 15d-$PGJ_2$ in SHR VSMCs was mediated through PPAR${\gamma}$, and dependent on NF-${\kappa}B$ activation and ERK phosphorylation. However, inhibition of the p38 signaling pathway augmented the upregulatory effect of 15d-$PGJ_2$ on LPS-induced IL-8/CXCL8 mRNA. A NAD(P)H oxidase inhibitor inhibited the upregulatory effect of 15d-$PGJ_2$ on LPS-induced IL-8/CXCL8 mRNA expression in SHR VSMCs, and an increase in NAD(P)H oxidase activity was detected in SHR VSMCs treated with 15d-$PGJ_2$/LPS. Conclusion: Our results indicate that the upregulatory effect of 15d-$PGJ_2$ on LPS-induced IL-8/CXCL8 expression in SHR VSMCs is mediated through the PPAR${\gamma}$ and ERK pathway, and may be related to NAD(P)H oxidase activity. However, p38 inactivation may also play an important role in 15d-$PGJ_2$/LPS-induced IL-8/CXCL8 expression in SHR VSMCs.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.522-522
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• 1996

An investigation of the effects of transverse magnetic field and Peltier effect on melt convection and macrosegregation in vertical Bridgman crystal grosth of Te doped InSb was been carried out by means of microstructure observation, Hall measurement, electrical resistivity measurement and X-ray analysis. Before the experiments, Interface stability, convective instability and suppression of convection by magnetic field were calculated theoretically. After doping 1018, 1019 cm-3 Te in InSb, the temperature of Bridgman furnace was set up at $650^{\circ}C$. The samples were grown in I.D. 11mm, 100mm high quartz tube. The velocity of growth was about 2${\mu}{\textrm}{m}$/sec. In order to obtain the suppression of convection by magnetic field in the middle of growth, 2-4KG magnetic field was set on the melt. For searching of the shape of solid-liquid interface and the actual velocity of crystal growth, let 2A current flow from solid to liquid for 1second every 50seconds repeatedly (Peltier effect). The grown InSb was polycrystal, and each grain was very sharp. There was no much difference between the sample with and without magnetic field at a point of view of microstructure. For the sample with Peltier effect, the Peltier marks(striation) were observed regularly as expected. Through these marks, it was found that the solid-liquid interface was flat and the actual growth velocity was about 1-2${\mu}{\textrm}{m}$/sec. On the ground of theoretical calculation, there is thermosolutal convection in the Te doped InSb melt without magnetic field in this growth condition. and if there is more than 1KG magnetic field, the convection is suppressed. Through this experiments, the effective distribution coefficients, koff, were 0.35 in the case of no magnetic field, and 0.45 when the magnetic field is 2KG, 0.7 at 4KG. It was found that the more magnetic field was applied, the more convection was suppressed. But there was some difference between the theoretical calculation and the experiment, the cause of the difference was thought due to the use of some approximated values in theoretical calculation. In addition to these results, the sample with Peltier effect showed unexpected result about the Te distribution in InSb. It looked like no convection and no macrosegregation. It was thought that the unexpected behavior was due to Peltier mark. that is, when the strong current flew the growing sample, the mark was formed by catching Te. As a result of the phenomena, the more Te containing thin layer was made. The layer ruled the Hall measurement. The values of resistivity and mobility of these samples were just a little than those of other reference. It was thought that the reason of this result was that these samples were due to polycrystal, that is, grain boundaries had an influence on this result.

• 한국지반환경공학회 논문집
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• 제19권10호
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• pp.21-26
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• 2018

흙-습윤 특성곡선은 불포화토에서 물의 흐름, 다상유체에서의 상대투수계수, 그리고 흙의 강성 및 부피 변화를 이해하는데 필수적이다. 바이오폴리머는 미생물에 완전 분해가 가능한 자연에 무해한 친환경 물질이다. 따라서, 치토산, 폴리에틸렌 옥사이드, 잔탄검, 알지네이트염 및 폴리아크릴산 등과 같은 바이오폴리머가 지반복원, 지반성능향상 및 오일생산증진을 위해 연구되어왔다. 폴리아크릴산(polyacrylic acid)은 바이오폴리머의 일종으로, 유체의 흐름 특성 향상을 통하여 오일생산증진 및 지반복원 등의 분야에서 우수한 성능을 보여왔다. 따라서, 본 연구에서는 폴리아크릴산(polyacrylic acid)을 포함한 모래의 흙-습윤 특성곡선의 이해하기 위해서 실내시험을 수행하고, 이론적 모델의 매개변수 변화를 연구하였다. 그 결과, 폴리아크릴산(polyacrylic acid)의 농도가 증가함에 따라, 포화된 모래에 주입되는 공기의 주입 모세관압력이 증가함을 보이고, 높은 모세관압력에서의 잔류 함수비 역시 증가하고 있음을 보였다. 또한, 이론식 모델의 매개변수를 구하였으며, 이를 활용한 흙-습윤 특성곡선이 실내 실험 결과와 잘 일치하고 있음을 보였다. 따라서, 이론적 모델의 매개변수를 알고 있으면, 본 연구에서 활용된 폴리아크릴산(polyacrylic acid)이외의 바이오폴리머를 포함한 모래 지반의 흙-습윤 특성곡선이 예측이 가능함을 설명하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• Asian Pacific Journal of Cancer Prevention
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• 제13권7호
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• pp.3223-3228
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• 2012

HMGN5 is a typical member of the HMGN (high mobility group nucleosome-binding protein) family which may function as a nucleosomal binding and transcriptional activating protein. Overexpression of HMGN5 has been observed in several human tumors but its role in tumorigenesis has not been fully clarified. To investigate its significance for human lung cancer progression, we successfully constructed a shRNA expression lentiviral vector in which sense and antisense sequences targeting the human HMGN5 were linked with a 9-nucleotide loop. Inhibitory effects of siRNA on endogenous HMGN5 gene expression and protein synthesis were demonstrated via real-time RT-PCR and western blotting. We found HMGN5 silencing to significantly inhibit A549 and H1299 cell proliferation assessed by MTT, BrdU incorporation and colony formation assays. Furthermore, flow cytometry analysis showed that specific knockdown of HMGN5 slowed down the cell cycle at the G0/G1 phase and decreased the populations of A549 and H1299 cells at the S and G2/M phases. Taken together, these results suggest that HMGN5 is directly involved in regulation cell proliferation in A549 and H1299 cells by influencing signaling pathways involved in cell cycle progression. Thus, our finding suggests that targeting HMGN5 may be an effective strategy for human lung cancer treatment.

• 한국진공학회지
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• 제19권1호
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• pp.14-21
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• 2010

Ge은 Si에 비하여 높은 이동도를 갖기 때문에 차세대 고속 metal oxide semiconductor field effect transistors (MOSFETs) 소자를 위한 channel 물질로서 각광받고 있다. 그러나 화학적으로 안정한 게이트 산화막의 부재는 MOS 소자에 Ge channel의 사용에 주요한 장애가 되어왔다. 특히, Ge 기판 위에 고품질의 계면 특성을 갖는 게이트 절연막의 제조는 필수 요구사항이다. 본 연구에서, $HfO_xN_y$ 박막은 Ge 기판 위에 플라즈마 원자층 증착법(plasma-enhanced atomic layer deposition, PEALD)을 이용하여 증착되었다. 플라즈마 원자층 증착공정 동안에 질소는 질소, 산소 혼합 플라즈마를 이용한 in situ 질화법에 의하여 첨가되었다. 산소 플라즈마에 대한 질소 플라즈마의 첨가로 성분비를 조절함으로써 전기적 특성과 계면 성질을 향상시키는데 초점을 맞추어서 연구를 진행하였다. 질소 산소의 비가 1：1이었을 때, EOT의 값의 10% 감소를 갖는 고품질의 소자특성을 보여주었다. X-ray photoemission spectroscopy (XPS)와 high resolution transmission electron microscopy (HR-TEM)를 사용하여 박막의 화학적 결합 구조와 미세구조를 분석하였다.

• 디지털융복합연구
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• 제10권11호
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• pp.619-626
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• 2012

본 연구의 목적은 일반계고와 특성화고의 스마트 기기 활용 실태와 교육용 애플리케이션 개발에 대한 인식수준을 비교 분석하여 보다 효과적인 조리교육 애플리케이션 개발 방안을 모색하는 것이다. 특성화고 학생이 일반고 학생보다 스마트 기기 활용 학습 방법을 더 선호하고, 하루 사용 시간이 더 많았다. 학습 분야는 일반고는 어학, 특성화고는 자격증에서 높게 나타났다. 스마트 기기 활용 학습의 장점은 자투리시간 활용이었고, 인프라를 가장 필요로 하였다. 가장 기대되는 콘텐츠는 일반고는 동영상 강의, 특성화고는 협력학습이었고, 가장 만족하는 것은 이동성이었다. 조리교육용 애플리케이션 개발에 대해 특성화고 학생이 더 많은 필요성을 느끼고 있었고, 더 많이 활용할 계획을 갖고 있었으며, 실습 동영상을 더 선호하였다. 희망 요리 영역은 일반고는 간편 요리, 특성화고는 조리기능사요리를 선호하였고, 애플리케이션은 포털 사이트와 학과 홈페이지에 탑재되기를 희망하였다. 그러므로, 조리교육용 애플리케이션 개발 시 실습 동영상과 조리 레시피가 포함된 시뮬레이션 학습 위주로 제작하고, 평가 기능을 추가하여 학업 성취 수준을 확인할 수 있도록 한다. 조리기능사 요리가 포함된 5분 이내의 콘텐츠가 될 수 있도록 제작하며, 각 차시별 과제 목표를 제시하고, 문제 해결을 위한 정보를 구체적으로 제공한다. 학습 몰입도를 높이기 위해 영상, 음악, 텍스트가 포함된 콘텐츠를 첨부한다. 수업의 시작과 전개, 정리의 흐름이 있도록 하며, SNS 협력학습 서비스를 활용하여 학습 주체간의 소통이 증진될 수 있도록 한다.

• 한국재료학회지
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• 제9권11호
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• pp.1129-1136
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• 1999

TEMAT precursor를 사용하여 다양한 증착 조건으로 ICP-CVD 방법으로 Si(100) 기판 위에 TiN 박막을 형성하였다. 형성된 TiN 박막의 결정상, 미세구조, 그리고 전기적 특성은 XRD, XPS, HRTEM, 그리고 전기적 측정으로 특성을 조사하였다. BI 구조를 갖는 다결정 TiN 박막은 기판의 온도가 $200^{\circ}C$ 이상의 온도에서 형성되었다. TiN(111) 박막은 기판의 온도가 $300^{\circ}C$에서 TEMAT, $\textrm{N}_{2}$, 그리고 Ar 가스의 유량이 10, 5, 그리고 5sccm으로 반응로에 주입할 때 형성되었다. TiN/Si(100) 계면은 TiN과 $\textrm{SiO}_2$사이에 계면반응이 없었으며 평탄하였다. 기판의 온도가 $500^{\circ}C$에서 형성된 TiN 박막의 비저항, carrier 농도와 이동도는 21 $\mu\Omega$cm, 9.5$\times\textrm{10}^{18}\textrm{cm}^{-3}$와 $462.6\textrm{cm}^{2}$/Vs으로 주어졌다.

• 한국ITS학회 논문지
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• 제19권5호
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• pp.40-51
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• 2020

2011년에 고속도로 정체 기준 속도가 개정된 후 많은 시간이 경과함에 따라 차량의 성능 개선, 경쟁 관계에 있는 고속열차 운행 확대, 고속도로 일부 구간의 제한속도 상향 등 다양한 고속도로 주행환경 변화가 발생하였고 고속도로 이용자의 이동 신속성에 대한 기대수준 또한 증가하는 추세이다. 따라서 본 연구에서는 설문조사를 통해 고속도로 이용자의 정체에 대한 인식을 조사하고, 고속도로 교통류 분석을 통해 고속도로 정체 기준 속도의 재설정을 검토하고자 한다. 설문조사 결과, 고속도로 이용자들이 인식하는 정체 기준 속도가 다소 높아진 것을 확인하였다. K-means 알고리즘을 통해 교통량 및 속도 자료를 분석한 결과, 서행과 정체의 분류 기준은 60km/h 수준인 것으로 나타났다. 또한 정체 기준 속도를 50km/h와 60km/h로 상향하는 것을 가정하여 고속도로 정체잦은구간을 산정해본 결과, 50km/h가 고속도로 이동성 관리를 위한 정체 기준 속도로 적절한 것으로 판단된다.

• Bulletin of the Korean Chemical Society
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• 제28권2호
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• pp.251-256
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• 2007

The crystal structure of fully dehydrated partially Cs+-exchanged zeolite X, [Cs52Na40Si100Al92O384], a = 24.9765(10) A, has been determined by single-crystal X-ray diffraction techniques in the cubic space group Fd3 at 21 °C. The crystal was prepared by flow method for 5 days using exchange solution in which mole ratio of CsOH and CsNO3 was 1 : 1 with total concentration of 0.05 M. The crystal was then dehydrated at 400 °C and 2 × 10-6 Torr for 2 days. The structure was refined to the final error indices, R1 = 0.051 and wR2 (based on F2) = 0.094 with 247 reflections for which Fo > 4σ (Fo). In this structure, about fifty-two Cs+ ions per unit cell are located at six different crystallographic sites with special selectivity; about one Cs+ ion is located at site I, at the centers of double oxygen-rings (D6Rs), two Cs+ ions are located at site I', and six Cs+ ions are found at site II'. This is contrary to common view that Cs+ ions cannot pass sodalite cavities nor D6Rs because six-ring entrances are too small. Ring-opening by the formation of ?OH groups and ring-flexing make Cs+ ions at sites I, I', and II' enter six-oxygen rings. The defects of zeolite frameworks also give enough mobility to Cs+ ions to enter sodalite cavities and D6Rs. Another six Cs+ ions are found at site II, thirty-six are located at site III, and one is located at site III' in the supercage, respectively. Forty Na+ ions per unit cell are located at two different crystallographic sites; about fourteen are located at site I, the centers of D6Rs and twenty-six are also located at site II in the supercage. Cs+ ions and Na+ ions at site II are recessed ca. 0.34(1) A and 1.91(1) A into the supercage, respectively. In this work, the highest exchange level of Cs+ ions per unit cell was achieved in zeolite X by conventional aqueous solution methods and it was also shown that Cs+ ion could pass through the sixoxygen rings.