• Bulletin of the Korean Chemical Society
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• 제19권9호
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• pp.927-933
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• 1998

Polycrystalline powder of vanadium-doped forsterite (Vδ $Mg_2SiO_4$) was synthesized by the $H_2O_2$-assisted sol-gel method. The vanadium dopant, which was added as VO$(OMe)_3$ in methanol, went through several redox reactions as the sol-gel reaction proceeded. Upon adding VO$(OMe)_3$ to a mixture of $Mg(OMe)_2$ and Si$(OEt)_4$ in methanol, V(V) reduced to V(IV). As hydrolysis reaction proceeded, the V(IV) oxidized all back to V(V). Apparently, some of the V(V) reduced to V(IV) during subsequent gelation by condensation reaction. The V(IV) remained even after heat treatment of the gel in highly oxidizing atmosphere. The crystallization of the xerogel around 880 ℃ readily produced single phase forsterite without any minor phase. Using the polycrystalline powder as feeding stock, single crystals of vanadium-doped forsterite were grown by the floating zone method in oxidizing or reducing atmosphere. The doping was limited in low level because of the high partitioning of the vanadium in liquid phase during melting. The greenish single crystal absorbed visible light of 700∼1100 nm. But, no emission was obtained in near infrared range.

• 한국결정성장학회지
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• 제9권1호
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• pp.20-22
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• 1999

본 연구에서는 floating zone 법에 의해서 고융조성의 순수한 $LiNbO_{3}$와 MgO가 5 mol% 첨가된 $LiNbO_{3}$ 단결정을 육성하였다. 화학양론조성의 $LiNbO_{3}$는 순수한 $LiNbO_{3}$를 VTE(vapor transport equilibration) 법에 의해 처리하여 준비하였고 위의 세 결정을 기본으로 하여 결정의 화학양론비와 첨가물($Mg^{2+}$)에 따른 $LiNbO_{3}$의 물성변화를 조사하였다. 공융조성의 $LiNbO_{3}$에서 높은 농도의 MgO 첨가는 화학양론조성 $LiNbO_{3}$와 유사한 특성을 보였다. Curie 온도는 공융조성의 순수한 $LiNbO_{3}$의 $1145^{\circ}C$에서 $1200^{\circ}C$ 이상으로 상승되었고 가시광선 영여그이 흡수단의 위치도 단차장쪽으로 10 nm 이상 이동하였다. MgO가 첨가된 결정의 $OH^{-}$ 흡수밴드의 위치는 40 nm 정도 단파장 영역으로 크게 이동하였다.

• 상하수도학회지
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• 제24권4호
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• pp.369-376
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• 2010

The purpose of this study is to reprocess Waste-LCD(Liquid Crystal Display), to widely increase specific surface-area by foaming agent in the process of reprocessing and to use as a substrate of water treatment which is increased the ability of biological treatment, as well as to control non-point source pollutants produced by surface run off during rainfall with using this substrate, and to improve water quality of public watershed as developing substrate for water treatment to be able to purify second treated water which is exhausted at the wastewater treatment plant. The average removal efficiency of Waste-LCD that using the foaming technology was SS 71.2%, BOD 55.7%, COD 58.4%, T-N 29.5% and T-P was 50.3%. Almost Media, early stage showed low removal efficiency of SS and BOD. However, it became high when the microorganism adhered the Media. The variation of SS removal efficiency was high by inflow concentration of SS. The reason for the Media 4 showed high SS removal efficiency is that it has wide specific surface-area, and also it has a pore. All in all, it shows floating matter treatment ability not only inside but it also works outside of the substrate.

• E2M - 전기 전자와 첨단 소재
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• 제7권4호
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• pp.331-340
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• 1994

Polysilicon on insulator has been recrystallized by zone melting recrystallization method with graphite strip heaters. Experiments are performed with non-seed SOI structures. When the capping layer thickness of Si$\_$3/N$\_$4//SiO$\_$2/ is 2.0.mu.m, grain boundaries are about 120.mu.m spacing and protrusions reduced. After the seed SOI films are annealed at 1100.deg. C in NH$\_$3/ ambient for 3 hours, the recrystallized silicon surface has convex shape. After ZMR process, the tensile stress is 2.49*10$\^$9/dyn/cm$\^$2/ and 3.74*10$\^$9/dyn/cm$\^$2/ in the seed edge and seed center regions. The phenomenon of convex shape and tensile stress difference are completely eliminated by using the PSG/SiO$\_$2/ capping layer. The characterization of SOI films are showed that the SOI films are improved in wetting properties. N channel SOI MOSFET has been fabricated to investigate the electrical characteristics of the recrystallized SOI films. In the 0.7.mu.m thickness SOI MOSFET, kink effects due to the floating substrate occur and the electron mobility was calculated from the measured g$\_$m/ characteristics, which is about 589cm$\^$2//V.s. The recrystallized SOI films are shown to be a good single crystal silicon.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 춘계학술대회논문집E
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• pp.191-195
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• 2001

The applications of magnetic fluid can be normally made by 1) using changes of a property of matter caused by applied magnetic field; 2) preserving magnetic fluid at a certain position or in a magnetic fluid keeping the body in a floating condition; 3) controlling the flow of magnetic fluid by means of magnetic field. However, these are usually made by using their methods together. In this study, the natural convection flow of a magnetic fluid in annular pipes is experimentally analyzed. High temperature is kept constantly inside of a circular pipe of experimental model, on the other hand, low temperature is kept constantly outside of it. In experiments, several cases are carried out in order to clarify the fluence of direction and intensity of magnetic fields on the natural convection of magnetic fluid. Therefore magnetic fields are applied in various intensity and up and down directions by permanent magnets.

• 한국세라믹학회지
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• 제38권8호
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• pp.705-709
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• 2001

SrTiO$_3$에 Pr$^{3+}$ 이온, 또는 Pr$^{3+}$ 이온과 Ga$^{3+}$ 이온을 첨가하여 합성한 형광체와 floating zone method로 성장시킨 단결정의 PL 특성을 조사하였다. 분말 형광체와 단결정에서 모두 Ga$^{3+}$ 이온이 함께 첨가되었을 때 적색 발광 세기가 크게 증가하였다. XRF(X-Ray Fluorescence) 측정결과 Ga$^{3+}$ 이온이 함께 첨가되었을 때 SrTiO$_3$결정 격자내의 Pr$^{3+}$ 이온의 농도가 증가하였다. Ga$^{3+}$ 이온이 함께 첨가되었을 때 적색 발광 세기가 증가하는 것은 첨가된 Ga$^{3+}$ 이온이 결정내 발광 center인 Pt$^{3+}$ 이온의 농도가 증가시켰기 때문이며, 또한 Ga$^{3+}$ 이온이 hole trap center로 작용하기 때문인 것으로 생각된다.

• 한국세라믹학회지
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• 제22권6호
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• pp.37-41
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• 1985

Several $Al_2O_3$-based polycrystalline which had different dopant ratio in the range of 0.5mol% were prepared by doping pure $Cr_2O_3$, $ZrO_2$, $HfO_3$ Single crystalline which had same composition with above polycrystalline were made by means of floating zone method. This study examined the role of each dopant for enhancing the mefchanical properties of $Al_2O_3$-based Ceramics. Optical micrographs $({\times}200)$ of $Al_2O_3-Cr_2O_3$ single crystal showing not only radial crack (rc) on the specimen surface but median crack (mc) and lateral crack (lc) under surface at the edge of indentation mark. Fracture toughness of $Al_2O_3$-based Ceramics was increased with $ZrO_2$ content. Alloying effect of $Cr_2O_3$ contributed to the hardness of $Al_2O_3$ based ceramics.

• 한국세라믹학회지
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• 제22권6호
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• pp.42-52
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• 1985

Several $Al_2O_3$-based polycrystalline which had different dopant ratio in the range of 0.5mol% were prepared by doping pure $Cr_2O_3$ $HfO_2$. Single crystalline which had same composition with above polycrystalline were made by means of floating zone method. This study examined the role of each dopant for enhancing the mechanical properties of $Al_2O_3$-based Ceramics. Optical micrographs $({ imes}200)$ of $Al_2O_3-Cr_2O_3$ single crystal showing not only radial crack (rc) on the specimen surface but median crack(mc) and lateral crack(lc) under surface at the edge of indentation mark. Fracture toughness of Al2O3-based Ceramics was increased with $ZrO_2$ content. Alloying effect of $Cr_2O_3$ contributed to the hardness of $Al_2O_3$ based ceramics.

• 한국진공학회지
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• 제5권4호
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• pp.387-390
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• 1996

백금 결정을 고주파(RE) 부유띠 용융법에 의하여 성장 시켰으며 성장하는 동안 직류 전류를 걸어줌으로써 백금에서 나타날 수 있는 하부구조의 개선을 도모하였다. 직류 전류와 성장 방향에 따라 백금 결정을 성장 시킴에 하부 구조에 영향을 준다는 것이 확인되었다. 백금 결정에 있어서의 줄 무늬 구조는 불안정하였으며 이것은 어닐링 방법에 의해서도 제거 될 수 있다는 결과를 얻었다.

• Progress in Superconductivity
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• 제4권1호
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• pp.14-18
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• 2002

We had succeeded to grow bulk sing1e crystals of La／sub 2-x／Sr／sub x／$CuO_4$by the traveling solvent floating zone method (TSFZ), and to prepare La／sub 2-x／Sr／sub x／CuO$_4$single-crystalline thick films on the Zn-doped La$_2$$CuO_4$ substrate by new liquid phase epitaxial technique using an infrared heating furnace (IR-LPE). In this paper, Ireview growth of bulk single crystals and single-crystalline thick films of La／sub 2-x／Sr／sub x／$CuO_4$, and discuss on their device properties to develop high speed integrated electronic devices.