• Title/Summary/Keyword: Flexible electronic device

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Investigation of Low-Temperature Processed Amorphous ZnO TFTs Using a Sol-Gel Method

  • Chae, Seong Won;Yun, Ho Jin;Yang, Seung Dong;Jeong, Jun Kyo;Park, Jung Hyun;Kim, Yu Jeong;Kim, Hyo Jin;Lee, Ga-Won
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.3
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    • pp.155-158
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    • 2017
  • In this paper, ZnO Thin Film Transistors (TFTs) were fabricated by a sol-gel method using a low-temperature process, and their physical and electrical characteristics were analyzed. To lower the process temperature to $200^{\circ}C$, we used a zinc nitrate hydrate ($Zn(NO_3)_2{\cdot}xH_2O$) precursor. Thermo Gravimetric Analyzer (TGA) analysis showed that the zinc nitrate hydrate precursor solution had 1.5% residual organics, much less than the 6.5% of zinc acetate dihydrate at $200^{\circ}C$. In the sol-gel method, organic materials in the precursor disrupt formation of a high-quality film, and high-temperature annealing is needed to remove the organic residuals, which implies that, by using zinc nitrate hydrate, ZnO devices can be fabricated at a much lower temperature. Using an X-Ray Diffractometer (XRD) and an X-ray Photoelectron Spectrometer (XPS), $200^{\circ}C$ annealed ZnO film with zinc nitrate hydrate (ZnO (N)) was found to have an amorphous phase and much more oxygen vacancy ($V_o$) than Zn-O bonds. Despite no crystallinity, the ZnO (N) had conductance comparable to that of ZnO with zinc acetate dihydrate (ZnO (A)) annealed at $500^{\circ}C$ as in TFTs. These results show that sol-gel could be made a potent process for low-cost and flexible device applications by optimizing the precursors.

A Study on the Electrical Resistivity of Graphene Added Carbon Black Composite Electrode with Tensile Strain (인장변형에 따른 그래핀복합 카본블랙전극의 저항변화연구)

  • Lee, T.W.;Lee, H.S.;Park, H.H.
    • Journal of the Microelectronics and Packaging Society
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    • v.22 no.1
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    • pp.55-61
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    • 2015
  • Stretchable electrode materials are focused to apply to flexible device such as e-skin and wearable computer. Used as a flexible electrode, increase in electrical resistance should be minimalized under physical strain as bend, stretch and twist. Carbon black is one of candidates, for it has many advantages of low cost, simple processing, and especially reduction in resistivity with stretching. However electrical conductivity of carbon black is relatively low to be used for electrodes. Instead graphene is one of the promising electronic materials which have great electrical conductivity and flexibility. So it is expected that graphene added carbon black may be proper to be used for stretchable electrode. In this study, under stretching electrical property of graphene added carbon black composite electrode was investigated. Mechanical stretching induced cracks in electrode which means breakage of conductive path. However stretching induced aligned graphene enhanced connectivity of carbon fillers and maintained conductive network. Above all, electronic structure of carbon electrode was changed to conduct electrons effectively under stretching by adding graphene. In conclusion, an addition of graphene gives potential of carbon black composite as a stretchable electrode.

The Fabrication of OTFT-OLED Array Using Ag-paste for Source and Drain Electrode (Ag 페이스트를 소스와 드레인 전극으로 사용한 OTFT-OLED 어레이 제작)

  • Ryu, Gi-Seong;Kim, Young-Bae;Song, Chung-Kun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.45 no.5
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    • pp.12-18
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    • 2008
  • Ag paste was employed for source and drain electrode of OTFTs and for the data metal lines of OTFT-OLED array on PC(polycarbonate) substrate. We tested two kinds of Ag-pastes such as pastes for 325 mesh and 500 mesh screen mask to examine the pattern ability and electrical performance for OTFTs. The minimum feature size was 60 ${\mu}m$ for 325 mesh screen mask and 40 ${\mu}m$ for 500 mesh screen mask. The conductivity was 60 $m{\Omega}/\square$ for 325 mesh and 133.1 $m{\Omega}/\square$ for 500 mesh. For the OTFT performance the mobility was 0.35 $cm^2/V{\cdot}sec$ and 0.12 $cm^2/V{\cdot}sec$, threshold voltage was -4.7 V and 0.9 V, respectively, and on/off current ratio was ${\sim}10^5$, for both screen masks. We applied the 500 mash Ag paste to OTFT-OLED array because of its good patterning property. The pixel was composed of two OTFTs and one capacitor and one OLED in the area of $2mm{\times}2mm$. The panel successfully worked in active mode operation even though there were a few bad pixels.

Integrated Photonic Microwave Bandpass Filter Incorporating a Polymer Microring Resonator (폴리머 마이크로링 공진기를 이용한 광학적 마이크로웨이브 대역통과 필터)

  • Chin, Won-Jun;Kim, Do-Hwan;Song, Ju-Han;Lee, Sang-Shin
    • Korean Journal of Optics and Photonics
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    • v.16 no.5
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    • pp.469-475
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    • 2005
  • An integrated photonic microwave bandpass filter has been proposed and demonstrated incorporating a coherently coupled microring resonator in low-loss polymers. The proposed device may feature compact site, simple structure, tuning via the thermooptic and electrooptic effect, and flexible integration with other electrical and optical devices. The resonator was designed to have an extremely small bandwidth so that it could be used to selectively pass the optical signal carrying the microwave signal to attain efficient bandpass filtering. We made and tested two resonators with a single ring and double rings, and performed a theoretical fitting of their measured transfer curves to predict the performance of the microwave filters based on them precisely. It was found that as the number of the rings used for the resonator increases, the bandwidth gets smaller, the rolloff sharper, and the band rejection higher. Finally our filter exhibited the center frequency of 10GHz, the 3-dB bandwidth of 1.0GHz, the corresponding quality (Q) factor of 10, and the rejection outside of the passband of more than 25dB.

Enhanced Electrical Conductivity of Gold Doped Graphene Films by Microwave Treatment

  • Kim, Yoo-Seok;Song, Woo-Seok;Cha, Myoung-Jun;Lee, Su-Il;Cho, Ju-Mi;Kim, Sung-Hwan;Park, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.188-188
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    • 2012
  • Graphene, with its unique physical and structural properties, has recently become a proving ground for various physical phenomena, and is a promising candidate for a variety of electronic device and flexible display applications. Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ${\sim}60{\Omega}$/sq and ~85% transmittance in the visible range, the chemical vapor deposition (CVD) synthesized graphene electrodes have a higher transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. In this study, we report a creative strategy, irradiation of microwave at room temperature under vacuum, for obtaining size-homogeneous gold nano-particle doping on graphene. The gold nano-particlization promoted by microwave irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping. These results clearly revealed that gold nanoparticle with ${\geq}30$ nm in mean size were decorated along the surface of the graphene after microwave irradiation. The fabrication high-performance transparent conducting film with optimized doping condition showed a sheet resistance of ${\geq}100{\Omega}$/sq. at ~90% transmittance. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

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Transparent Nano-floating Gate Memory Using Self-Assembled Bismuth Nanocrystals in $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) Pyrochlore Thin Films

  • Jeong, Hyeon-Jun;Song, Hyeon-A;Yang, Seung-Dong;Lee, Ga-Won;Yun, Sun-Gil
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.10a
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    • pp.20.1-20.1
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    • 2011
  • The nano-sized quantum structure has been an attractive candidate for investigations of the fundamental physical properties and potential applications of next-generation electronic devices. Metal nano-particles form deep quantum wells between control and tunnel oxides due to a difference in work functions. The charge storage capacity of nanoparticles has led to their use in the development of nano-floating gate memory (NFGM) devices. When compared with conventional floating gate memory devices, NFGM devices offer a number of advantages that have attracted a great deal of attention: a greater inherent scalability, better endurance, a faster write/erase speed, and more processes that are compatible with conventional silicon processes. To improve the performance of NFGM, metal nanocrystals such as Au, Ag, Ni Pt, and W have been proposed due to superior density, a strong coupling with the conduction channel, a wide range of work function selectivity, and a small energy perturbation. In the present study, bismuth metal nanocrystals were self-assembled within high-k $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMN) films grown at room temperature in Ar ambient via radio-frequency magnetron sputtering. The work function of the bismuth metal nanocrystals (4.34 eV) was important for nanocrystal-based nonvolatile memory (NVM) applications. If transparent NFGM devices can be integrated with transparent solar cells, non-volatile memory fields will open a new platform for flexible electron devices.

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대기압 플라즈마 표면 처리를 이용한 금속과 폴리이미드 필름의 접촉력 향상에 관한 연구

  • O, Jong-Sik;Park, Jae-Beom;Yeom, Geun-Yeong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.264-264
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    • 2011
  • Poly [(N, N'-oxydiphenylene) pyromellitimide], polyimide (PI) film은 기계적 강도가 매우 우수하고 열적, 화학적 안정성이 뛰어난 재료로서 전자제품의 소형화, 경령화, 고성능화를 위한 차세대 flexible electronic device에 적용하기 위하여 많은 연구가 진행되고 있다. 그러나 PI의 특성상, 매우 낮은 표면에너지로 인해 금속과의 접촉력이 좋지 않은 단점을 가지고 있다. 본 연구에서는, 금속박막과 PI film 과의 접촉력을 증가시키기 위해 remote-type modified dielectric barrier discharge (DBD) module을 이용하여 대기압 플라즈마 표면처리를 하였다. 실험에 사용된 gas composition은 각각 $N_2$/ He/ $SF_6$, $N_2$/ He/ $O_2$, $N_2$/ He/ $SF_6$/ $O_2$, $N_2$/ He/ $SF_6$/ $O_2$ 이다. $N_2$/ He/ $SF_6$/ $O_2$ gas composition을 이용하여 PI 표면을 플라즈마 처리한 경우, C=O 결합이 PI film 위에 생성됨으로써, 접촉각이 매우 낮게 형성됨을 관찰할 수 있었다. 이와는 반대로 $N_2$/ He/ $SF_6$ gas composition 을 사용하였을 경우에는 C-Fx 화학적 결합이 생성되기 때문에 가장 높은 접촉각이 형성됨을 관찰할 수 있었다. 특히, $N_2$ (40 slm)/ He (1 slm)/ $SF_6$ (1.2 slm) gas composition에 $O_2$ gas를 0.2 slm부터 1.0 slm까지 변화시켜가며 PI film 표면을 처리한 결과, $O_2$ gas를 0.9 slm 첨가하였을 때, 가장 낮은 $9.3^{\circ}$의 접촉각을 얻을 수 있었다. 이는 0.9 slm의 $O_2$ gas를 첨가하였을 때, 가장 많은 양의 $O_2$ radical이 생성되기 때문에 많은 양의 C=O 결합이 생성되기 때문이다. 최적화된 $N_2$ (40 slm)/ He (1 slm)/ $SF_6$ (1.2 slm)/ $O_2$ (0.9 slm) gas composition 조건에서 Ag film과 PI film과의 접촉력을 관찰할 결과, 111 gf/mm를 얻을 수 있었다.

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Improved Electrical Properties of Graphene Transparent Conducting Films Via Gold Doping

  • Kim, Yoo-Seok;Song, Woo-Seok;Kim, Sung-Hwan;Jeon, Cheol-Ho;Lee, Seung-Youb;Park, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.388-388
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    • 2011
  • Graphene, with its unique physical and structural properties, has recently become a proving ground for various physical phenomena, and is a promising candidate for a variety of electronic device and flexible display applications. The physical properties of graphene depend directly on the thickness. These properties lead to the possibility of its application in high-performance transparent conducting films (TCFs). Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ~60 ${\Omega}/sq$ and ~85% transmittance in the visible range, the chemical vapor deposition (CVD) synthesized graphene electrodes have a higher transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. Here, we report an ingenious strategy, irradiation of MeV electron beam (e-beam) at room temperature under ambient condition,for obtaining size-homogeneous gold nanoparticle decorated on graphene. The nano-particlization promoted by MeV e-beam irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping, and energy dispersive X-ray spectroscopy. These results clearly revealed that gold nanoparticle with 10~15 nm in mean size were decorated along the surface of the graphene after 1.0 MeV-e-beam irradiation. The fabrication high-performance TCF with optimized doping condition showed a sheet resistance of ~150 ${\Omega}/sq$ at 94% transmittance. A chemical transformation and charge transfer for the metal gold nanoparticle were systematically explored by X-ray photoelectron spectroscopy and Raman spectroscopy. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

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Forward Error Correction based Adaptive data frame format for Optical camera communication

  • Nguyen, Quoc Huy;Kim, Hyung-O;Lee, Minwoo;Cho, Juphil;Lee, Seonhee
    • International journal of advanced smart convergence
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    • v.4 no.2
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    • pp.94-102
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    • 2015
  • Optical camera communication (OCC) is an extension of Visible Light Communication. Different from traditional visible light communication, optical camera communications is an almost no additional cost technology by taking the advantage of build-in camera in devices. It was became a candidate for communication protocol for IoT. Camera module can be easy attached to IoT device, because it is small and flexible. Furthermore almost smartphone equip one or two camera for both back and font side with high quality and resolution. It can be utilized for receiving the data from LED or positioning. Actually, OCC combines illumination and communication. It can supply communication for special areas or environment where do not allow Radio frequency such as hospital, airplane etc. There are many concept and experiment be proposed. In this paper we proposed utilizing Android smart-phone camera for receiver and introduce new approach in modulation scheme for LED at transmitter. It also show how Manchester coding can be used encode bits while at the same time being successfully decoded by Android smart-phone camera. We introduce new data frame format for easy decoded and can be achieve high bit rate. This format can be easy to adapt to performance limit of Android operator or embedded system.

Power Loss Modeling of Individual IGBT and Advanced Voltage Balancing Scheme for MMC in VSC-HVDC System

  • Son, Gum Tae;Lee, Soo Hyoung;Park, Jung-Wook
    • Journal of Electrical Engineering and Technology
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    • v.9 no.5
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    • pp.1471-1481
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    • 2014
  • This paper presents the new power dissipation model of individual switching device in a high-level modular multilevel converter (MMC), which can be mostly used in voltage sourced converter (VSC) based high-voltage direct current (HVDC) system and flexible AC transmission system (FACTS). Also, the voltage balancing method based on sorting algorithm is newly proposed to advance the MMC functionalities by effectively adjusting switching variations of the sub-module (SM). The proposed power dissipation model does not fully calculate the average power dissipation for numerous switching devices in an arm module. Instead, it estimates the power dissipation of every switching element based on the inherent operational principle of SM in MMC. In other words, the power dissipation is computed in every single switching event by using the polynomial curve fitting model with minimum computational efforts and high accuracy, which are required to manage the large number of SMs. After estimating the value of power dissipation, the thermal condition of every switching element is considered in the case of external disturbance. Then, the arm modeling for high-level MMC and its control scheme is implemented with the electromagnetic transient simulation program. Finally, the case study for applying to the MMC based HVDC system is carried out to select the appropriate insulated-gate bipolar transistor (IGBT) module in a steady-state, as well as to estimate the proper thermal condition of every switching element in a transient state.