• Title/Summary/Keyword: Flash over

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The Effect of Back Electrode on the Surface Discharge of polymeric Materials (고분자절연재료에서 배후전극이 연면방전에 미치는 영향)

  • 조기선;신태현;김영조
    • Electrical & Electronic Materials
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    • v.3 no.1
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    • pp.29-35
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    • 1990
  • 원통형 및 평판형 유전체에 임펄스전압을 인가하는 경우 나타나는 50%의 Flash over전압 (F.O.V)특성 및 Lichtenberg 도형에 미치는 배후전극의 영향을 관측하였다. F.O.V는 배후전극이 있는 경우가 없을 때보다 인가전압을 저하시킬 수 있었고 Lichtenberg도형에서 방전로의 진전상태는 배후전극의 존재로 인하여 크게 신장함을 알았다.

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A Study on the Effects of Metallic Barriers on Surface Discharge and It's Application to Insulators and Bushings (연면방전에 미치는 도전층의 영향 및 그 애자, 투관에의 응용에 관한 연구)

  • 정성계
    • 전기의세계
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    • v.19 no.2
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    • pp.1-5
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    • 1970
  • According to the previous studies which was done by the author, the flashover voltage was found to be increased considerably if some metallic barriere are inserted into the flashover discharge path. This paper shows that the flashover voltage in suspension insulators and bushings is raised up by the application of metallic barrier effect on surface discharge. Using moderate metallic barrier configulation the flash over voltage can be raised up by the amount of about 15% compared to that of the convensional type of suspension insulatiors and bushings.

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Enhance Potential Stability of Organic Electrolyte in EDLC by Using Co-solvent and Its electrochemical properties. (전기 이중층 커패시터 적용을 목적으로 한 공용매상 전해액과 전기화학적 특성)

  • Lee, Hyeon-Seok;Yuk, Yeong-Jae;Kim, Han-Ju;Park, Su-Gil
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2014.11a
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    • pp.164-164
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    • 2014
  • Characteristics of electrolyte are those; electrical stability, ion conductivity, viscosity, high temperature work, cell application. Theoretically, GBL has high oxidation voltage. Also, boiling point of GBL is $206^{\circ}C$ and flash point is over $280^{\circ}C$.

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Reducing start-up latency in linux swap system over flash memory (플래시 메모리 기반 리눅스 스왑 시스템에서 기동 시간의 단축)

  • Sohyang Ko;Seonsu Jeon;Yeonseung Ryu
    • Proceedings of the Korea Information Processing Society Conference
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    • 2008.11a
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    • pp.1035-1038
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    • 2008
  • 가상 메모리의 스왑 저장 장치로서 플래시 메모리를 사용하는 경우, 시스템을 기동할 때 스왑 영역의 초기화를 위한 삭제 연산이 요구되어 기동 시간이 오래 걸리는 문제점이 있다. 본 논문에서는 스왑 영역의 플래시 메모리 내용을 모두 삭제하지 않고 일부만을 삭제함으로서 기동 시간을 줄일 수 있는 방법을 연구하였다.

Physiological and Behavioral Studies on the Stimulating Effect of Strobe Light-IV Electroretinogram of Jack Mackerel by Strobe Light Frequency and Intensity (스트로보광의 위협효과에 관한 행동생리학적 연구-IV 스트로보광의 섬광빈도 및 강도에 의한 전갱이의 망막활동전위)

  • An, Yeong-Il
    • Journal of the Korean Society of Fisheries and Ocean Technology
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    • v.40 no.2
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    • pp.132-137
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    • 2004
  • In order to assess electrophysiological responses of fish, a recording of Electroretinogram (ERG) was made on the dark-adapted eyes of anesthetized jack mackerel Trachurus japonicus in the strobe-flash frequency range of 1.7~25 Hz and in the intensity range of 56~415 lx.s. The amplitude change of the ERG is highest at the moment when the strobe light is irradiated and becomes weakest soon after, then gradually increases and becomes stable. The amplitude of the ERG by strobe flash frequencies looked stable tendency after about 12~17 minutes elapsed. During the test duration of 30 minutes, the maximum of amplitude change and stimulation amount over all the tested frequencies was found at 10 Hz. The reduction of the flash intensity caused the decrease in the amplitude and stimulation amount.

A Study on SONOS Non-volatile Semiconductor Memory Devices for a Low Voltage Flash Memory (저전압 플래시메모리를 위한 SONOS 비휘발성 반도체기억소자에 관한 연구)

  • 김병철;탁한호
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.7 no.2
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    • pp.269-275
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    • 2003
  • Polysilicon-oxide-nitride-oxide-silicon(SONOS) transistors were fabricated by using 0.35${\mu}{\textrm}{m}$ complementary metal-oxide-semiconductor(CMOS) process technology to realize a low voltage programmable flash memory. The thickness of the tunnel oxide, the nitride, and the blocking oxide were 2.4nm, 4.0nm, and 2.5nm, respectively, and the cell area of the SONOS memory was 1.32$\mu$$m^2$. The SONOS device revealed a maximum memory window of 1.76V with a switching time of 50ms at 10V programming, as a result of the scaling effect of the nitride. In spite of scaling of nitride thickness, memory window of 0.5V was maintained at the end of 10 years, and the endurance level was at least 105 program/erase cycles. Over-erase, which was shown seriously in floating gate device, was not shown in SONOS device.

An Efficient Log Buffer Management Scheme of Flash Memory Through Delay of Merging Hot Data Blocks (HOT 데이터 블록 병합 지연을 이용한 효율적인 플래시 메모리 로그 버퍼 관리 기법)

  • Kim, Hak-Chul;Park, Yong-Hun;Yun, Jong-Hyeong;Seo, Dong-Min;Song, Suk-Il;Yoo, Jae-Soo
    • The Journal of the Korea Contents Association
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    • v.10 no.1
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    • pp.68-77
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    • 2010
  • In this paper, we propose a new log buffer management scheme considering the accessibility of the data. Our proposed scheme evaluates the worth of the merge of log blocks. It conducts the merge operations between infrequently updated data and the data blocks and postpones as much as possible the merge operations between frequently updated data and the data blocks. As a result, the proposed method prevents the unnecessary merge operations, reduces the number of the erase operations, and improves the utilization of the flash memory storage. In order to show the superiority of the proposed scheme, we compare it with BAST and FAST. It is shown through performance evaluation that the proposed method achieves about 25% and 65% performance improvements over BAST and FAST on average in terms of the number of the erase operations.

An In-Depth Analysis and Improvement on Cache Mechanisms of SSD FTL (SSD FTL의 캐시 메커니즘에 대한 심층 분석 및 개선)

  • Lee, Hyung-Bong;Chung, Tae-Yun
    • IEMEK Journal of Embedded Systems and Applications
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    • v.15 no.1
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    • pp.9-16
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    • 2020
  • Recently, the capacity of SSD has been increasing rapidly due to the improvement of flash memory density. To take full advantage of these SSDs, first of all, FTL's prompt adaptation is necessary. The FTL is a translation layer existing in SSDs to overcome the drawback of the SSD that cannot be modified in place, and has garbage collection and caching functions in addition to the map table management function. In this study, we focus on caching function, compare and analyze the cache implementation methodologies, and propose improved methods. Typical cache implementations divide the cache into groups, manage and retrieve the caches in the group as a linked list. Thus, searches are made in the order of the linked list. In contrast, we propose a method of sequential searching using the search area group of a cache registered in the map table regardless of the linked list and cache group. Experimental results show that the proposed method has a 2.5 times improvement over the conventional method.

Parallel BCH Encoding/decoding Method and VLSI Design for Nonvolatile Memory (비휘발성 메모리를 위한 병렬 BCH 인코딩/디코딩 방법 및 VLSI 설계)

  • Lee, Sang-Hyuk;Baek, Kwang-Hyun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.5
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    • pp.41-47
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    • 2010
  • This paper has proposed parallel BCH, one of error correction coding methods which has been used to NAND flash memory for SSD(solid state disk). To alter error correction capability, the proposed design improved reliability on data block has higher error rate as used frequency increasingly. Decoding parallel process bit width is as two times as encoding parallel process bit width, that could reduce decoding processing time, accordingly resulting in one half reduction over conventional ECC.

Development and Evaluation of an Elementary School Nutrition Education Program to Prevent Breakfast Skipping (아침결식 예방을 위한 초등학교 영양교육 프로그램의 개발 및 평가)

  • Son, Hyeong-Gyeong;Lee, Yeon-Kyung
    • Korean Journal of Community Nutrition
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    • v.15 no.6
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    • pp.740-749
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    • 2010
  • The purpose of this study was to develop and evaluate a nutrition education program to prevent breakfast skipping for elementary school children. Subjects were 102 5th grade students (51 boys, 51 girls) as the "education group" and 200 5th grade students (102 boys, 98 girls) as the "non-education group." The nutrition education program consisted of 4 lessons over an 8-week period. Teaching materials, including flash animation, panel, PowerPoint, and a bingo game, were developed for this education program. After education, there was significant increase in the percentage of students who had eaten breakfast every day, understood that breakfast has a great effect on health, and will eat breakfast every day in the education group compared to non-education group. Parents' positive behavior toward daily breakfast preparation and the percentage of parents who had their children eat breakfast every day increased significantly. The students of the education group responded positively to the questions of the benefit and importance of nutrition education. The flash animation received high marks, especially in terms of understanding of contents, content clarity, emphasis of the core content, delivery of necessary knowledge, and applicability of breakfast. This study shows the effectiveness of a 4-lesson nutrition education taught during an 8-week time period to induce changes in recognizing the importance of breakfast and in behavior toward breakfast consumption.