• Title/Summary/Keyword: Flash Memory Storage

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Applying In-Page Logging to SQLite DBMS (SQLite DBMS에 IPL 기법 응용)

  • Na, Gap-Joo;Kim, Sang-Woo;Kim, Jae-Myung;Lee, Sang-Won
    • Journal of KIISE:Databases
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    • v.35 no.5
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    • pp.400-410
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    • 2008
  • Flash memory has been widely used in mobile devices, such as mobile phone and digital camera. Recently flash SSD(Solid State Disk), having same interface of the disk drive, is replacing the hard disk of some laptop computers. However, flash memory still cannot be considered as the storage of database systems. The FTL(Flash Translation Layer) of commercial flash SSD, making flash memory operate exactly same as a hard disk, shows poor performance on the workload of databases with many random overwrites. Recently In-Page Logging(IPL) approach was proposed to solve this problem. In this paper, we implement IPL approach on SQLite, a popular open source embedded DBMS, and evaluate its performance. It improves the performance by up to 30 factors for update queries.

Performance Evaluation of Flash Memory-Based File Storages: NAND vs. NOR (플래시 메모리 기반의 파일 저장 장치에 대한 성능분석)

  • Sung, Min-Young
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.9 no.3
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    • pp.710-716
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    • 2008
  • This paper covers the performance evaluation of two flash memory-based file storages, NAND and NOR, which are the major flash types. To evaluate their performances, we set up separate file storages for the two types of flash memories on a PocketPC-based experimental platform. Using the platform, we measured and compared the I/O throughputs in terms of buffer size, amount of used space, and kernel-level write caching. According to the results from our experiments, the overall performance of the NAND-based storage is higher than that of NOR by up to 4.8 and 5.7 times in write and read throughputs, respectively. The experimental results show the relative strengths and weaknesses of the two schemes and provide insights which we believe assist in the design of flash memory-based file storages.

An Implementation of Efficient M-tree based Indexing on Flash-Memory Storage System (플래시 메모리 저장장치에서 효율적인 M-트리 기반의 인덱싱 구현)

  • Yu, Jeong-Soo;Nang, Jong-Ho
    • Journal of KIISE:Computing Practices and Letters
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    • v.16 no.1
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    • pp.70-74
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    • 2010
  • As the storage capacity of the flash memories increased portable devices began to store mass amount of multimedia data on flash memory. Therefore, there has been a need for an effective data management scheme by indexing structure. Among many indexing schemes, M-tree is well known for it's suitability for multimedia data with high dimensional matrix space. Since flash memories have writing operation restriction, there is a performance limitation in indexing scheme with frequent write operation. In this paper, a new node split method with reduced write operation for m-tree indexing scheme in flash memory is proposed. According to experiments the proposed method reduced the write operation to about 7% of the original method. The proposed method will effectively construct an indexing structure for multimedia data in flash memories.

A Study on Characteristics and Techniques that Affect Data Integrity for Digital Forensic on Flash Memory-Based Storage Devices (플래시 메모리 기반 저장장치에서 디지털 포렌식을 위한 데이터 무결성에 영향을 주는 특성 및 기술 연구)

  • Hyun-Seob Lee
    • Journal of Internet of Things and Convergence
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    • v.9 no.3
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    • pp.7-12
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    • 2023
  • One of the most important characteristics of digital forensics is integrity. Integrity means that the data has not been tampered with. If evidence is collected during digital forensic and later tampered with, it cannot be used as evidence. With analog evidence, it's easy to see if it's been tampered with, for example, by taking a picture of it. However, the data on the storage media, or digital evidence, is invisible, so it is difficult to tell if it has been tampered with. Therefore, hash values are used to prove that the evidence data has not been tampered with during the process of collecting evidence and submitting it to the court. The hash value is collected from the stored data during the evidence collection phase. However, due to the internal behavior of NAND flash memory, the physical data shape may change over time from the acquisition phase. In this paper, we study the characteristics and techniques of flash memory that can cause the physical shape of flash memory to change even if no intentional data corruption is attempted.

A Design of 256GB volume DRAM-based SSD(Solid State Drive) (256GB 용량 DRAM기반 SSD의 설계)

  • Ko, Dea-Sik;Jeong, Seung-Kook
    • Journal of Advanced Navigation Technology
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    • v.13 no.4
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    • pp.509-514
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    • 2009
  • In this paper, we designed and analyzed 256GB DRAM-based SSD storage using DDR1 memory and PCI-e interface. SSD is a storage system that uses DRAM or NAND Flash as primary storage media. Since the SSD read and write data directly to memory chips, which results in storage speeds far greater than conventional magnetic storage devices, HDD. Architecture of the proposed SSD system has performance of high speed data processing duo to use multiple RAM disks as primary storage and PCI-e interface bus as communication path of RAM disks. We constructed experimental system with UNIX, Windows/Linux server, SAN Switch, and Ethernet Switch and measured IOPS and bandwidth of proposed SSD using IOmeter. In experimental results, it has been shown that IOPS, 470,000 and bandwidth,800MB/sec of the DDR-1 SSD is better than those of the HDD and Flash-based SSD.

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The buffer Management system for reducing write/erase operations in NAND flash memory (NAND 플래시 메모리에서 쓰기/지우기 연산을 줄이기위한 버퍼 관리 시스템)

  • Jung, Bo-Sung;Lee, Jung-Hoon
    • Journal of the Korea Society of Computer and Information
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    • v.16 no.10
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    • pp.1-10
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    • 2011
  • There are the large overhead of block erase and page write operations in NAND flash memory, though it has low power consumption, cheap prices and a large storage. Due to the physical characteristics of NAND flash memory, overwrite operations are not permitted at the same location, so rewriting operation require after erase operation. it cause performance decrease of NAND flash memory. Using SRAM buffer in traditional NAND flash memory, it can not only reduce effective write operation but also guarantee fast memory access time. In this paper, we proposed the small SRAM buffer management system for reducing overhead of NAND flash memory, that is, erase and write operations. The proposed buffer system in a NAND flash memory consists of two parts, i.e., a fully associative temporal buffer with the small fetching block size and a fully associative spatial buffer with the large fetching block size. The temporal buffer have small fetching blocks that referenced from spatial buffer. When it happen write operations or erase operations in NAND flash memory, the related fetching blocks in temporal buffer include a page or a block are written in NAND flash memory at the same time. The writing and erasing counts in NAND flash memory can be reduced. According to the simulation results, although we have high miss ratios, write and erase operations can be reduced approximatively 58% and 83% respectively. Also the average memory access times are improved about 84% compared with the fully associative buffer with two sizes.

Tracking Cold Blocks for Static Wear Leveling in FTL-based NAND Flash Memory (메모리에서 정적 마모도 평준화를 위한 콜드 블록 추적 기법)

  • Jang, Yonghun;Kim, Sungho;Hwang, Sang-Ho;Lee, Myungsub;Park, Chang-Hyeon
    • IEMEK Journal of Embedded Systems and Applications
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    • v.12 no.3
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    • pp.185-192
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    • 2017
  • Due to the characteristics of low power, high durability and high density, NAND flash memory is being heavily used in various type of devices such as USB, SD card, smart phone and SSD. On the other hand, because of another characteristic of flash cell with the limited number of program/erase cycles, NAND flash memory has a short lifetime compared to other storage devices. To overcome the lifetime problem, many researches related to the wear leveling have been conducted. This paper presents a method called a TCB (Tracking Cold Blocks) using more reinforced constraint conditions when classifying cold blocks than previous works. TCB presented in this paper keeps a MCT (Migrated Cold block Table) to manage the enhanced classification process of cold blocks, with which unnecessary migrations of pages can be reduced much more. Through the experiments, we show that TCB reduces the overhead of wear leveling by about 30% and increases the lifetime up to about 60% compared to BET and BST.

Enhancing LRU Buffer Replacement Policy with Delayed Write of Not-cold-dirty-pages for Flash Memory (플래시 메모리를 위한 Not-cold-Page 쓰기지연을 통한 LRU 버퍼교체 정책 개선)

  • Jung Ho-Young;Park Sung-Min;Cha Jae-Hyuk;Kang Soo-Yong
    • Journal of KIISE:Computer Systems and Theory
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    • v.33 no.9
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    • pp.634-641
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    • 2006
  • Flash memory has many advantages like non-volatility and fast I/O speed, but it has also disadvantages such as not-in-place-update data and asymmetric read/write/erase speed. For the performance of flash memory storage, it is essential for the buffer replacement algorithms to reduce the number of write operations that also affects the number of erase operations. A new buffer replacement algorithm is proposed in this paper, that delays the writes of not-cold-dirty pages in the buffer cache of flash storage. We show that this algorithm effectively decreases the number of write operations and erase operations without much degradation of hit ratio. As a result overall performance of flash I/O speed is improved.

An Efficient Flash Memory B-Tree Supporting Very Cheap Node Updates (플래시 메모리 B-트리를 위한 저비용 노드 갱신 기법)

  • Lim, Seong-Chae
    • The Journal of the Korea Contents Association
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    • v.16 no.8
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    • pp.706-716
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    • 2016
  • Because of efficient space utilization and fast key search times, B-trees have been widely accepted for the use of indexes in HDD-based DBMSs. However, when the B-ree is stored in flash memory, its costly operations of node updates may impair the performance of a DBMS. This is because the random updates in B-tree's leaf nodes could tremendously enlarge I/O costs for the garbage collecting actions of flash storage. To solve the problem, we make all the parents of leaf nodes the virtual nodes, which are not stored physically. Rather than, those nodes are dynamically generated and buffered by referring to their child nodes, at their access times during key searching. By performing node updates and tree reconstruction within a single flash block, our proposed B-tree can reduce the I/O costs for garbage collection and update operations in flash. Moreover, our scheme provides the better performance of key searches, compared with earlier flash-based B-trees. Through a mathematical performance model, we verify the performance advantages of the proposed flash B-tree.

The Instruction Flash memory system with the high performance dual buffer system (명령어 플래시 메모리를 위한 고성능 이중 버퍼 시스템 설계)

  • Jung, Bo-Sung;Lee, Jung-Hoon
    • Journal of the Korea Society of Computer and Information
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    • v.16 no.2
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    • pp.1-8
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    • 2011
  • NAND type Flash memory has performing much researches for a hard disk substitution due to its low power consumption, cheap prices and a large storage. Especially, the NAND type flash memory is using general buffer systems of a cache memory for improving overall system performance, but this has shown a tendency to emphasize in terms of data. So, our research is to design a high performance instruction NAND type flash memory structure by using a buffer system. The proposed buffer system in a NAND flash memory consists of two parts, i.e., a fully associative temporal buffer for branch instruction and a fully associative spatial buffer for spatial locality. The spatial buffer with a large fetching size turns out to be effective serial instructions, and the temporal buffer with a small fetching size can achieve effective branch instructions. According to the simulation results, we can reduce average miss ratios by around 77% and the average memory access time can achieve a similar performance compared with the 2-way, victim and fully associative buffer with two or four sizes.