• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.1
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• pp.1-11
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• 2002

In this paper, new simple method for the calculation of depletion region under complex geometry and general purpose numerical simulator that could handle this were developed and applied in the analysis of SCM with nanoscale tip, which is a promising tool for high resolution dopant profiling. Our simple depletion region seeking algorithm alternatively switches material of elements to align ionized element boundary with contour of zero potential. To prove the validity of our method we examined whether our results satisfy the definition of depletion region and compared those with known values of un junction and MOS structure. By modeling of capacitance based on the shape of depletion region and potential distribution, we could calculate the CV curve and dC/dV curve between silicon substrate and nanoscale SCM tip.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.48 no.12
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• pp.35-41
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• 2011

In this paper, an analysis for a new substrate shielding symmetric coupled MIS structure consisting of grounded crossbar at the interface between Si and SiO2 layer using the Finite-Difference Time-Domain(FDTD) method is presented. In order to reduce the substrate effects on the transmission line characteristics, a shielding structure consisting of grounded crossbar lines over time-domain signal has been examined. Parameters of symmetric coupled MIS transmission line with various gaps between crossbars for even- and odd-mode are investigated as the functions of frequency, and the extracted distributed frequency-dependent transmission line parameters and corresponding equivalent circuit parameters as well as quality factor for the new MIS crossbar embedded structure are also presented. It is shown that the quality factor of the symmetric coupled transmission line can be improved without significant change in the characteristic impedance and effective dielectric constant.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.2
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• pp.143-150
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• 2000

In this paper, an optimum size for the inset cut feed of microstrip antennas has been determined by using the finite-difference time domain method. At first, the return losses of microstrip antennas having various shapes and types of the inset cut feeds have been computed numerically for a given frequency and a substrate. Then an optimum size of the inset cut feed has been determined by iterative computation procedure for a given condition. It was found that the optimum width of the inset cut feed is about 0.42 times of the width of 50Ω feed line and the optimum length of the inset cut feed is about 0.36 times of the length of the antenna patch. These results are proved by the experimental data obtained from the measurements of many fabricated antennas. It was also found that the optimum size of the inset cut feed is independent on the frequency, the height and the dielectric constant of the antennal substrate.

• Journal of the Korea Concrete Institute
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• v.22 no.1
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• pp.77-84
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• 2010

Latex modified concrete (LMC) exhibits improved material properties including high tensile strength and durability compared with conventional concrete, and hence LMC has been used as protective layers over the bridge deck slabs to increase their service life with underlying assumption of excellent bond behavior between the LMC overlay and the concrete substrate. In this study, the effect of the primary parameters of the concrete substrate (i.e., shrinkage, stiffness and cracking capacity) as well as the LMC overlay thickness on the probability of cracking of the bridge deck slabs using LMC overlays was investigated by carrying out the finite element analysis that simulated the bond behavior of LMC overlays on normal strength concrete (NSC) and HPC bridge deck slabs. Based on the results of the numerical analysis, it is concluded that the relatively high shrinkage strains and stiffness of HPC slabs can increase its probability of cracking in bridge deck slabs using LMC overlay.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.12 s.354
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• pp.83-88
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• 2006

In this paper, we propose a new cross bar embedded structure for improvement of attenuation characteristics along the different lossy media. A general characterization procedure based on the extraction of the characteristic impedance and propagation constant for analyzing a single MIS(Metal-Insulator-Semiconductor) transmission line used and an analysis for a new substrate shielding MIS structure consisting of grounded crossbars at the interface between Si and Sio2 layer using the Finite-Difference Time-Domain(FDTD) technique is used. In order to reduce the substrate effects on the transmission line characteristics, a shielding structure consisting of grounded cross bar lines over time-domain signal has been examined. The extracted, distributed frequency-dependent transmission line parameters as well as the line voltages and currents, and also corresponding equivalent circuit parameters have been examined as function of frequency. It is shown that the quality factor of the transmission line can be improved without significant changes in the characteristic impedance and effective dielectric constant.

• Korean Journal of Optics and Photonics
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• v.25 no.4
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• pp.193-199
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• 2014

The net effect of the emitter orientation, Mie scatters, and pillow lenses on the outcoupling efficiency (OCE) of a bottom-emitting OLED having an internal photonic crystal layer was investigated by a combined optical simulation based on the finite-difference time-domain method (FDTD) and the ray-tracing technique. The simulation showed that when the emitter orientation was horizontal with respect to the OLED surface, the OCE could be increased by 54% when a photonic crystal layer was employed, while it could be improved by 86% under optimized conditions of Mie scatters and pillow lenses applied to the glass substrate. The peculiar intensity distribution of the OLED, caused by the periodic lattice structure of the photonic crystal layer, could be ameliorated by inserting Mie scatters into the glass substrate. This study suggests that conventional outcoupling structures combined with control of the emitter orientation could improve the OCE substantially.

• Journal of the Korean Society of Safety
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• v.29 no.4
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• pp.9-14
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• 2014

Self-piercing riveting(SPR) is a mechanical fastening technique which is put pressure on the rivet for joining the sheets. Unlike a spot welding, SPR joining does not make the harmful gas and $CO_2$ and needs less energy consumption. In this study, static and fatigue tests were conducted using tensile-shear specimens with Al-5052 plates for evaluation of fatigue strength of the SPR joints. During SPR joining process for the specimen, using the current sheet thickness and a rivet, the optimal applied punching force was found to be 21 kN. And, the maximum static strength of the specimen produced at the optimal punching force was 3430 N. During the fatigue tests for the specimens, interface failure mode occurred on the top substrate close to the rivet head in the most high-loading range region, but on the bottom substrate close to the rivet tail in the low -loading range region. There was a relationship between applied load amplitude $P_{amp}$ and lifetime of cycle N for the tensile-shear, $P_{amp}=3395.5{\times}N^{-0.078}$. Using the stress-strain curve of the Al-5052 from tensile test, the simulations for fatigue specimens have been carried out using the implicit finite element code ABAQUS. The relation between von-Mises equivalent stress amplitude and number of cycles was found to be ${\sigma}_{eq}=514.7{\times}N^{-0.033}$.

• Proceedings of the Materials Research Society of Korea Conference
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• 2012.05a
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• pp.81.2-81.2
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• 2012

To fabricate a metal mold for injection molding, hot-embossing and imprinting process, mechanical machining, electro discharge machining (EDM), electrochemical machining (ECM), laser process and wet etching ($FeCl_3$ process) have been widely used. However it is hard to get precise structure with these processes. Electrochemical etching has been also employed to fabricate a micro structure in metal mold. A through mask electrochemical micro machining (TMEMM) is one of the electrochemical etching processes which can obtain finely precise structure. In this process, many parameters such as current density, process time, temperature of electrolyte and distance between electrodes should be controlled. Therefore, it is difficult to predict the result because it has low reliability and reproducibility. To improve it, we investigated this process numerically and experimentally. To search the relation between processing parameters and the results, we used finite element simulation and the commercial finite element method (FEM) software ANSYS was used to analyze the electric field. In this study, it was supposed that the anodic dissolution process is predicted depending on the current density which is one of major parameters with finite element method. In experiment, we used stainless steel (SS304) substrate with various sized square and circular array patterns as an anode and copper (Cu) plate as a cathode. A mixture of $H_2SO_4$, $H_3PO_4$ and DIW was used as an electrolyte. After electrochemical etching process, we compared the results of experiment and simulation. As a result, we got the current distribution in the electrolyte and line profile of current density of the patterns from simulation. And etching profile and surface morphologies were characterized by 3D-profiler(${\mu}$-surf, Nanofocus, Germany) and FE-SEM(S-4800, Hitachi, Japan) measurement. From comparison of these data, it was confirmed that current distribution and line profile of the patterns from simulation are similar to surface morphology and etching profile of the sample from the process, respectively. Then we concluded that current density is more concentrated at the edge of pattern and the depth of etched area is proportional to current density.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.3
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• pp.203-212
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• 2010

In this paper, we present an analytical model for the first eigen energy level ($E_0$) of the carriers in the inversion layer in present generation MOSFETs, having ultrathin gate oxides and high substrate doping concentrations. Commonly used approaches to evaluate $E_0$ make either or both of the following two assumptions: one is that the barrier height at the oxide-semiconductor interface is infinite (with the consequence that the wave function at this interface is forced to zero), while the other is the triangular potential well approximation within the semiconductor (resulting in a constant electric field throughout the semiconductor, equal to the surface electric field). Obviously, both these assumptions are wrong, however, in order to correctly account for these two effects, one needs to solve Schrodinger and Poisson equations simultaneously, with the approach turning numerical and computationally intensive. In this work, we have derived a closed-form analytical expression for $E_0$, with due considerations for both the assumptions mentioned above. In order to account for the finite barrier height at the oxide-semiconductor interface, we have used the asymptotic approximations of the Airy function integrals to find the wave functions at the oxide and the semiconductor. Then, by applying the boundary condition at the oxide-semiconductor interface, we developed the model for $E_0$. With regard to the second assumption, we proposed the inclusion of a fitting parameter in the wellknown effective electric field model. The results matched very well with those obtained from Li's model. Another unique contribution of this work is to explicitly account for the finite oxide-semiconductor barrier height, which none of the reported works considered.

• Tribology and Lubricants
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• v.18 no.3
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• pp.194-203
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• 2002

This paper is the first step fur thermo-mechanical stress analyses of part with coated layer under contact load. A lot of coated material is applied in many structures to endure severe situation, like thermal stresses, high temperature gradients, irradiation, impacts by microscopic meteorites, and so on. In this part we are going to apply the FEM to analyze space parts with a coated layer subjected to a contact load thermo-mechanically. Coating layer is very thin in comparision with the structure, therefore it should take more times and behaviors to analyze whole model. In these reason we develop the FEM method of analyzing part with coated layer under contact load using partial model. Steady state temperature distribution of the part is obtained first, and then we apply quasi-static external load on the part. To obtain the final stage of solution, we compute the total solution, and by subtracting the thermal strain from the total ones we get the mechanical strains to compute stresses of the parts. In using the FEM, one has to discretize the model into many sub-domain, finite elements. The method is consisited of two steps. First step is to analyze the whole model with rather coarse meshes. Second step we cut a small region near the loading point, and analyze with very fine meshes. This method is allowable by the Saint-Venant's principle. And then, we finally shall check the therma1 load on the stresses of the space part with coating layer with or without substrate cracks. Then, we predict the actual behaviors of the part used in space.