• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.381.1-381.1
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• 2014

In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).

• Journal of Information Display
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• v.13 no.1
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• pp.51-54
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• 2012

In this study, the bias-temperature stress and current-temperature stress induced by the electrical stabilities of half-Corbino hydrogenated-amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with different gate electrode geometries fabricated on the same substrate were examined. The influence of the gate pattern on the threshold voltage shift of the half-Corbino a-Si:H TFTs is discussed in this paper. The results indicate that the half-Corbino a-Si:H TFT with a patterned gate electrode has enhanced power efficiency and improved aperture ratio when compared with the half-Corbino a-Si:H TFT with an unpatterned gate electrode and the same source/drain electrode geometry.

• Journal of Advanced Marine Engineering and Technology
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• v.9 no.2
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• pp.153-158
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• 1985

The dependence of the corrosion potential on the stress corrosion cracking of 304 austenitic stainless steel was inspected by using the specimen of constant displacement type under the environment of 42% $MgCl_2$ boiled solution. The relationship of the corrosion potential to the intermittent propagation behaviour in stress corrosion cracking was cleared. As the results, a possible model of stress corrosion cracking of 304 austenitic stainless steel in $MgCl_2$ boiled solution was presented on the basis of the Film Rupture Model. This model is specified by the following process. Rupturing of passive film at notch tip .rarw. Dissolution of metal ion and formation of tunnel .rarw. Initiation of microcrack .rarw. Propagation of main crack .rarw. Recreation of passive film at new crack surface.

• Proceedings of the KIEE Conference
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• 1998.07g
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• pp.2521-2523
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• 1998

Freestanding flexible microstructures fabricated from deposited thin films become mechanically unstable when internal stresses exceed critical values. The residual stress and stress gradient of aluminum thin film were examined to make sure of fabricating the reproduceable aluminium structure. For good shape of micro mirror array and microstructures, the experiment was done varying thickness and deposition rate. As the aluminium film thickness increased from 0.8${\mu}m$ to 1.6${\mu}m$, the stress gradient decreased from 11.62MPa/${\mu}m$ to 2.62MPa/${\mu}m$. The residual stress values are from 42.4MPa to 62.24MPa of tensile stresses.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1996.11a
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• pp.721-725
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• 1996

The microfabricated test structures were used in order to evaluate the stress characteristics in films. The test structures were fabricated using surface micromachining technique, including HF vapor phase etching as an effective release method. The fabricated structures were micro strain gauge, cantilever-type vernier gauge and bridge for stress measurement, and cantilever for stress gradient measurement. The strain was measures by observing the deformation of the structures occurred after release etching and the amount of deformation can be detected by micro vernier gauge, which has gauge resolution of 0.2${\mu}{\textrm}{m}$. The detection principles and the degree of precision for the measured strain were also discussed. The characteristics of residual stress in LPCVD polysilicon films were studied using these test structures. The stress gradient due to the stress variation through the film thickness was calculated by measuring the deflection at the cantilever free end.

• Corrosion Science and Technology
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• v.8 no.1
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• pp.11-14
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• 2009

The osmotic blistering behavior of polymeric coating film which is in contact with an aqueous environment has been investigated. In this study, the coating film has been assumed to be linearly viscoelastic. Interfacial stresses induced in a laminate model consisting of the viscoelastic film and the elastic substrate as the film absorbs moisture from the ambient environment have been investigated using the time-domain boundary element method. The overall stress intensity factor for interfacial cracks subjected to a uniform osmotic pressure has been computed using the tractions at the crack tip node. The magnitude of stress intensity factors decreases with time due to viscoelastic relaxation, but remains constant at large times.

• ETRI Journal
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• v.34 no.6
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• pp.966-969
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• 2012

From a practical viewpoint, the topic of electrical stability in oxide thin-film transistors (TFTs) has attracted strong interest from researchers. Positive bias stress and constant current stress tests on indium-gallium-zinc-oxide (IGZO)-TFTs have revealed that an IGZO-TFT with a larger Ga portion has stronger stability, which is closely related with the strong binding of O atoms, as determined from an X-ray photoelectron spectroscopy analysis.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 1999.04a
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• pp.19-26
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• 1999

This paper deals with the stress singularity induced at the interface corner between the viscoelastic thin film and the rigid substrate as the film absorbs moisture from the ambient environment. The rime-domain boundary element method is employed to investigate the behavior of interface stresses. The order of the free-edge singularity is obtained numerically for a given viscoelastic model. It is shown that the free-edge stress intensity factor is relaxed with time,'while the order of the singularity increases with time for the viscoelastic model considered.

• Proceedings of the Computational Structural Engineering Institute Conference
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• 2003.10a
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• pp.389-394
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• 2003

In this study, the stress singularity factors generated during cooling down from high curing temperature to room temperature have been analyzed for the viscoelastic thin film. The time domain boundary element method has been employed to investigate the behavior of stresses for the whole interface. Within the context of a linear viscoelastic theory, a stress singularity exists at the point where the interface between the elastic substrate and the viscoelastic thin film intersects the free surface.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2002.11a
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• pp.27-33
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• 2002

The residual thermal stresses at the interface corner between the elastic substrate and the viscoelastic thin film due to cooling from cure temperature down to room temperature have been studied. The polymeric thin film was assumed to be thermorheologically simple. The boundary element method was employed to investigate the nature of stresses on the whole interface. Numerical results show that very large stress gradients are present at the interface comer and such stress singularity might lead to edge cracks or delamination.