• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2002.10b
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• pp.139-140
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• 2002

This paper discusses the effect of plating condition on the mechanical property of electroplated Cu film. Current density, the amount of the organic additives was found to affect the residual stress of electroplated copper film. The result show that, in the case of residual stress, the copper film deposited at higher additive result in lower residual stress and plating current by $15mA/cm^2$ induced a better result than any other ones.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.6
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• pp.531-537
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• 2006

A micromachined piezoelectric microspeaker was fabricated with a highly c-axis oriented ZnO thin film on a silicon-nitride film having compressive residual stress. When it was measured 3 mm away from the microspeaker in open field, the largest sound pressure level produced by the fabricated microspeaker was about 91 dB at around 2.9 kHz for the applied voltage of $6\;V_{peak-to-peak}$. The key technologies to these successful results were as follows: (1) the usage of a wrinkled diaphragm caused by the high compressive residual stress of silicon-nitride thin film, (2) the usage of the highly c-axis oriented ZnO thin film.

• Proceedings of the KSME Conference
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• 2003.04a
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• pp.438-444
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• 2003

A new method to measure residual stress in micron and nano scale films is described. In the theory it is based on Linear Elastic Fracture Mechanics. And in the techniques it depends on the combined capability of the focused ion beam (FIB) imaging system and of high-resolution digital image correlation (DIC) software. The method can be used for any film material (whether amorphous or crystalline) without thinning the substrate. In the method, a region of the film surface is highlighted and scanning electron images of that region taken before and after a long slot, depth a, is introduced using the FIB. The DIC software evaluates the displacement of the surface normal to the slot due to the stress relaxation by using features on the film surface. To minimize the influence of signal noise and rigid body movement, not a few, but all of the measure displacements are used for determining the real residual stress. The accuracy of the method has been assessed by performing measurements on a nano film of diamond like carbon (DLC) on glass substrate and on micro film of aluminum oxide thermally grown on Fecrally substrate. It is shown that the new method determines the residual stress ${\sigma}_R=-1.73$ GPa for DLC and ${\sigma}_R=-5.45$ GPa for the aluminum oxide, which agree quite well with ones measured independently.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.10a
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• pp.355-358
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• 2003

To estimate the residual stresses in the thin film and surface coatings, combined method based on nanoindentation and finite element (FE) analysis was developed. A simple equation for estimating the residual stress was composed of the hardness and the parameters which can be driven from the nanoindentation loading and unloading behaviors. FE analysis on the nanoindentation procedure under the various residual stress levels was performed to determine the parameters that included in the equation. The equation showed a good coincidence between the estimated residual stresses and those for the FE analysis. Thus the proposed method was considered as a useful method for estimating the residual stresses in the thin film without stress free specimen.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.30-33
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• 1995

By using X-ray double crystal diffraction technique the multilayer structure composed of glass membrane, platinum film and $\alpha Al_2O_3$ substrate has been studied. It is found the stress is produced in the film by thermal mismatch within multilayer materials. The measuring results of thin film platinum resistors show that the stress were induce resistance change of device and different stress status will produce add resistance in different direction. Selecting proper glass material can make opposite stress in Pt film and opposite add resistance due to thermal mismatch. The reliability of Pt resistor has been improved with method of this stress compensation.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1537-1540
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• 2003

MEMS technology with micro scale is complete system utilized as the sensor. micro electro device. The metallization of MEMS is very important to transfer the power operating the sensor and signal induced from sensor part. But in the MEMS structures local stress concentration and deformation is often happened by geometrical shape and different constraint on the metallization. Therefore. this paper studies the effect of supporting type and thickness ratio about thin film thickness of the substrate thickness for the residual stress variation caused by thermal load in the multi-layer thin film. Specimens were made from materials such as Al, Au and Cu and uniform thermal load was applied, repeatedly. The residual stress was measured by FEA and nano-indentation using AFM. Generally, the specimen made of Al induced the large residual stress and the 1st layer made of Al reduced the residual stress about half percent than 2nd layer. Specimen made of Cu and Au being the lower thermal expansion coefficient induce the minimum residual stress. Similarly the lowest indentation length was measured in the Au_Cu specimen by nano-indentation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.9
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• pp.665-671
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• 1999

The paper represents the effects of the drive-in process parameters on the residual stress profile of the $p^+$ silicon film. Since the residual stress profile is notuniform along the direction normal to the surface, the residual stress is assumed to be a polynomial function of the depth. All the coefficients of the polynomial can be determined by measuring of the thicknesses and the deflections of cantilevers and the deflection of a rotating beam with a surface profiler meter and a microscope. As the drive-in temperature or the drive-in time increases, the boron concentration decreases and the magnitude of the average residual tensile stress decreases. Then, near the surface of the $p^+$ film the residual tensile stress is transformed into the residual compressive stress and its magnitude increases.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.135-135
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• 1999

It is well known that Raman spectroscopy is powerful tool in analysis of sp3/sp3 bonding fraction in diamond-like carbon(DLC) films. Raman spectra of DLC film is composed of D-peak centered at 1350cm-1 and G-peak centered at 1530cm-1. The sp3/sp3 fraction is qualitatively acquired by deconvolution method. However, in case of DLC film, it is generally observed that G-peak position shifts toward low wavenumber as th sp3 fraction increases. However, opposite results were frequently observed in ta-C films. ta-C film has much higher residual compressive stress due to its high sp3 fraction compared to the DLC films deposited by CVD method. Effect of residual stress on G-peak position is most recommendable parameter in Raman analysis of ta-C, due to its smallest fitting error among many parameters acquired by peak deconvolution of symmetric spectra. In current study, the effect of residual stress on Raman spectra was quantitatively evaluated by free-hang method. ta-C films of different residual stress were deposited on Si-wafer by modifying DC-bias voltage during deposition. The variation of the G-peak position along the etching depth were observed in the free-hangs of 20~30${\mu}{\textrm}{m}$ etching depth. Mathematical result based on Airy stress function, was compared with experimental results. The more reliable analysis excluding stress-induced shift was possible by elimination of the Raman shift due to residual compressiove stress.

• Journal of the Korean Magnetics Society
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• v.5 no.5
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• pp.470-473
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• 1995

We have constructed an apparatus for in sity measurement of stress of the film prepared by sputtering using an optical noncontact displacement detector. A Change of the gap distance between the detector and the substrate, caused by stress of a deposited film, was detected by a corresponding change of the reflectivity. The sensitivity of the displacement detector was $5.9\;{\mu}V/{\AA}$ and thus, it was turned out to be good enough to detect stress caused by deposition of a monoatomic layer. The apparatus was applied to in situ stress measurements of Co/X(X=Pd or Pt) multilayer thin films prepared on the glass substrates by dc magnetron sputtering. At the very beginning of the deposition, both Co and X sublayers have subjected to their own intrinsic stresses. However, when the film was thicker than about $100{\AA}$, constant tensile stress in the Co sublayer and compressive stress in the X sublayer were observed, which is believed to be related to a lattice mismatch between the matching planes of Co and X.

• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.73-81
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• 1997

In this paper, it is intended to present more reproducible and quantitative method for adhesion assemssement. In scratch test, micromechanical analysis on the stress state beneath the indenter was carried out considering the additional blister field. The interface adhesion was quantified as work of adhesion through Griffith energy approach on the basis of the analyzed stress state. The work of adhesion for DLC film/WC-Co substrate calculated through the proposed analysis shows the identical value regardless of distinctly different critical loads measured with the change of film thickness and scratching speed. On the other hand, uniaxial loading was imposed on DCL film/Al substrate, developing the transverse film cracks perpendicular to loading direction. Since this film cracking behavior depends on the relative magnitude of adhesion strength to film fracture strength, the quantification of adhesion strength was given a trial through the micromechanical analysis of adhesion-dependence of film cracking patterns. The interface shear strength can be quantified from the measurement of strain $\varepsilon$s and crack spacing $\lambda$ at the cessation of film cracking.