• The Korean Journal of Ceramics
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• v.3 no.2
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• pp.110-115
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• 1997

Li-doped ZnO films were prepared on Corning 1737 glass substrate by an rf magnetron sputtering technique using ZnO targets with various $Li_2CO_3$ contents ranging from 0 to 10 mol%. The effects of Li doping on the crystallinity and electrical properties of ZnO films were studied for their SAW filter applications. The film resistivity largely increased without suppressing the c-axis orientation and crystallinity with a small addition of Li. Heat treatment of the film at 40$0^{\circ}C$ induced that the film resistivity, c-axis orientation and crystallinity slightly increased. However, heat treatment of the film at 50$0^{\circ}C$ resulted in much lower resistivity than that of as-deposited film due to the increase of electron concentration caused by the evaporationof Li atoms from the ZnO film. Large addition of Li into the ZnO film rather diminished the film resistivity and suppressed the c-axis growth. It was concluded that a small doping of Li into the ZnO film and heat treatment at 40$0^{\circ}C$ caused the film resistivity to be high enough for SAW filter applications without suppression of the c-axis orientation and crystallinity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.246-250
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• 2000

Reactive radio frequency (RF)magnetron sputter has been used to deposit AlN thin film on a Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure and high $\textrm{N}_2$ concentration. Also it has been shown that properties of AlN thin film are affected by presputtering time. As presputtering time increased aluminum and nitride concentration of AlN thin film decreased. But oxygen concentration and grain size increased. The good preferred orientation was shown with the short presputtering time.

• Journal of Surface Science and Engineering
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• v.33 no.1
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• pp.34-37
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• 2000

We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin film's c-axis orientation and grain size were analyzed by XRD (x-ray diffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.5
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• pp.324-329
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• 2000

Microstructure, mechanical and fatigue behaviors of TiCN and TiN/TiCN thin films, deposited on quenched and tempered STD61 tool steel, were investigated by using XRD, XPS, hardness, adhesion and fatigue tests. The TiCN thin film is grown along the (100), (111) orientation, whereas the TiN/TiCN thin film is grown along the (111) orientation. The preferred orientation of TiN/TiCN thin film strongly depends on the TiN buffer layer whose orientation is (111), as is well-known. The TiN/TiCN thin film showed the higher adhesion compared with TiCN single layer because the TiN buffer layer, having good toughness, reduces the effects of the lower hardness of substrate. In the high cycle tension-tension fatigue test, the fatigue life of the TiCN and the TiN/TiCN coated steel increased approximately two to four times and five to nine times respectively compared with uncoated specimens. The TiN buffer layer in multilayer thin films plays an important role in reducing residual stress and fatigue crack initiation, and then in restraining the fatigue propagation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.140-143
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• 2002

In this study, we prepared ZnO/glass and $ZnO/SiO_{2}/Si$ thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated according to changing deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should have to prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and $SiO_{2}/Si$ substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.8
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• pp.711-715
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• 2003

In this study, we prepared ZnO/glass and ZnO/SiO$_2$/Si thin film by Facing Targets Sputtering (FTS) system for Film Bulk Acoustic Resonator (FBAR). When the ZnO thin film applied to piezoelectric thin film, it requires good c-axis preferred orientation. And c-axis orientation has a remarkable difference with preparation conditions. Therefore, c-axis orientation must be significantly evaluated as a function of deposition conditions. Moreover, in order to prepare ZnO thin film with good crystallographic properties and progressive of efficiency of product process, the ZnO thin film should be prepared as low temperature as possible. In this work, we prepared ZnO thin films on slide glass and SiO$_2$/Si substrate. And the crystallographic characteristics of ZnO thin films on sputtering conditions were investigated by alpha-step and X-ray diffraction.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.202-203
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• 2006

In the AC PDP, the MgO film is used as electrode protective film. This film must provide excellent ion bombardment protection, high secondary electron emission, and should be high transparent to visible radiation. In this study, we investigated the relations between the crystal orientation and e-beam evaporation process parameters. The crystal orientation of the MgO layer depends on the conditions of deposition. The parameters are the thickness of the MgO film $1000{\AA}-6500{\AA}$, the deposition rate $200{\AA}/min{\sim}440{\AA}/min$, the temperature $150^{\circ}C{\sim}250^{\circ}C$, and the distance between crucible and substrate 11cm ${\sim}$ 14cm. The temperature of substrate and evaporation rate of source material, or deposition rate of the film, are definitely related to the crystal orientation of the MgO thin film. The crystal orientation can be changed by the distance between the target(MgO tablet) and the substrate. However, the crystal orientation is not much affected by the thickness of MgO thin film.

• Journal of the Korean Wood Science and Technology
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• v.22 no.1
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• pp.80-84
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• 1994

The orientation of bezene ring in latex film was investigated with raman spectroscopy. The benzene ring of anionic latex ran parallel with the film surface of latex, whereas that of amphoteric latex did not. Consequently, it showed the possibility of interactions or interrelations between the orientation of benzene ring and ink, contact angle, printability and so on.

• Journal of the Korean Ceramic Society
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• v.41 no.2
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• pp.106-110
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• 2004

Nickel oxide (NiO) thin films were prepared on Si(100) substrates at room temperature by RF magnetron sputtering using a NiO target. The effects of oxygen flow ratio for the plasma gas on the preferred orientation and surface morphology of the NiO films were investigated. Highly crystalline NiO film with (100) orientation was obtained when it was deposited in pure Ar gas. For NiO film deposited in pure O$_2$ gas, on the other hand, the orientation of the film changed from (100) to (111) and its deposition rate decreased. The origin of the preferred orientation of the films was discussed. NiO films also showed different surface morphologies and roughnesses with the oxygen flow ratio.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.6
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• pp.539-542
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• 2002

The effect of the superconducting film thickness on the surface resistance has been investigated. Superconducting YBCO thin films have been grown on MgO substrates by pulsed laser deposition. The dependence of the orientation of YBCO film on thickness has been investigated by X-ray diffraction technique. X-ray diffraction indicated that the film orientation was changed by increasing the film thickness and by changing the substrate temperature. The microwave properties of the films with mixed orientations of a-axis and c-axis will be reported for the applications of microwave devices.