• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1049-1052
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• 2003

This study shows the change of the structural characteristic of AIN thin film deposition with the change of the deposition conditions such as Ar/$N_2$ gas ratio, operating pressure in chamber, and the distance between substrate and target in RF Magnetron Sputtering. The orientation and surface roughness of AIN thin film are studied by using XRD and AFM and the thickness is measured by using STYLUS PROFILER. While we can not identify the orientation of the thin film deposited in Ar only, we can obtain the (100) orientation of the thin film with the addition of $N_2$ to Ar. Especially the thin film deposited at 10% of Ar/$N_2$ gas ratio appears to be the most (100) oriented. The (100) orientation of thin film becomes weaker as the operating pressure becomes higher. The further distance between substrate and target is stronger the (100) orientation of the thin film is. The (100) orientation becomes weaker and (002) orientation starts to appear as the distance is shorter.

• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1023-1028
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• 2004

We fabricated AIN thin film by using RF magnetron sputtering and studied the structural characteristic of AIN thin film with the change of the deposition conditions such as Ar/$N_2$ flow ratio, working pressure, and the distance between substrate and target. The orientation and surface roughness of AIN thin film were studied by using XRD and AFM. We can not identify the orientation of the thin film deposited in Ar, while we obtained the (l00) orientation of the thin film with the addition of $N_2$. Especially, the thin film deposited at 18/2 (seem) of Ar/$N_2$ flow ratio exhibited to be the most (100) oriented. The (100) orientation of thin film becomes weaker as the working pressure becomes higher. The further distance between substrate and target is stronger the (100) orientation of the thin film, but the (100) orientation becomes weaker and (002) orientation started to appear as the distance is shorter. The surface roughness of the thin film deposited at 50$0^{\circ}C$ in Ar only is 1.1 nm, while very smooth thin film of 0.4～0.6 nm is obtained with the addition of $N_2$.

• Corrosion Science and Technology
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• 제3권4호
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• pp.172-177
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• 2004

Biaxially oriented polyethylene terephthalate copolymer(BO - PET)film laminated aluminiums have been applied for chip condenser case. The BO PET film is characterized by high molecular which gives high corrosion resistance, good adhesion and high heat resistance. The higher orientation lowers formability of the film. So, optimum orientation has to be controlled during the laminating process. And to confirm the adhesion between BO PET and aluminium and to guarantee the formability of PET laminated aluminums, we have controlled the chromium oxides weight on the aluminium and laminating condition ( laminating temperature, soaking temperature and lag time after nip roll and quenching conditions) This paper discusses the effect of the laminating conditions on the formability of laminated aluminums. As results, it is clear that the orientation of the BO PET film decreased with an increase in the strip temperature. When the film temperature is over the melting point of the film, its orientation drastically decreased.

• Radiation Oncology Journal
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• 제22권1호
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• pp.69-75
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• 2004

목적 : 선형가속기를 이용한 방사선 치료시 치료부위의 확인을 위한 하나의 방법으로 port film이 사용되고 있다 서울대학병원에서는 port film 촬영 시 기계적 변수를 port film상에 나타내기 위하여 방향성 표시기(orientation marker)를 갖는 fiduciary plate를 개발하였다. 대상 및 방법 : Fiduciary plate의 제작에는 아크릴 plate와 cerrobend, 수은이 사용되었다. 아크릴 plate의 크기는 $1\;cm{\times}25\;cm{\times}25\;cm$로 그 내부에 두 개의 방향성 표시기가 내재되었고, 선형가속기의 blocking tray slot에 삽입이 가능하도록 제작되었다. Plate 내부에는 2 cm 간격으로 2 mm 두께의 수평과 수직으로 만들어진 cerrobend line이 위치해 있고, 방향성 표시기 내부에는 수은으로 채워져 있다. 결과 : 아크릴 plate의 cerrobend line은 simulation films과 port films간의 치료 영역의 비교를 용이하게 한다. 수은을 이용하여 만들어진 방향성 표시기는 납으로 만들어진 일반적인 표시기가 없이도 전후좌우와 다양한 각도로 경사진 방향을 구분할 수 있게 한다. 또한 방향성 표시기는 film/cassette holder에 부착함으로써 simulation 시에도 이용될 수 있다. 결론: Fiduciary plate는 치료 영역 확인에 유용하고, 수은을 이용한 방향성 표시기내의 혼합액의 기하학적인 모양에 따라 port film의 촬영 parameter를 용이하게 파악할 수 있어 치료과정에서 촬영한 port film 간의 임상정도관리에 유용한 방법이 될 수 있다.

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.716-722
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• 2003

ZnO thin films were deposited on Al and Pt electrodes by an RF reactive sputtering system for the fabrication of FBAR (film bulk acoustic wave resonator), and the effect of thermal treatment temperature on their c-axis preferred orientation was investigated. SEM experiments show that columnar structure of ZnO thin films were grown with c-axis normal to electrode material, and XRD experiments show that both ZnO films were grown with (002) plane preferred orientation, but larger diffraction peak was observed with Pt electrode. The peak intensity increased with higher thermal treatment temperature, but c-axis preferred orientation was diminished. The surface roughness of Al thin film was higher than that of Pt, and these affect the surface roughness of ZnO film deposited on the electrode. Though the preferred orientation with respect to Pt(111) plane was improved with higher thermal treatment temperature, this could not improve the c-axis orientation of ZnO film.

• 한국자기학회지
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• 제7권6호
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• pp.314-320
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• 1997

폴리에스터 film 위에 자성도료를 도포 후 자성체의 배향 거동을 살펴보았다. static orientation 처리하여 평가한 결과 자성도료가 도포된 film이 배향자석을 통과할 때 배향자석의 입구측과 출구측에서 배향성이 최대로 나타나나 출구측이 약간 낮게 나타났으며 배향자석의 출구를 지나면서 static energy의 감소와 entropy의 증가에 의하여 도막의 건조과정 중 배향성은 서서히 감소되다가 완전히 건조되면서 일정한 수준으로 유지되었다. 그리고 film의 중심부보다 양쪽의 edge 부위에서의 배향성은 떨어지는데 그 원인은 배향자석의 형태에 기인하는 것으로 생각된다. Dynamic orientation 처리하여 평가한 결과 자기 tape에서 자성도막의 배향성이 향상됨에 따라 전 대역에서의 출력 특성은 향상되었으며 건조 조건에 따라서도 tape의 배향성이 변하였다. 따라서 자기 tape의 출력특성을 향상시키기 위하여는 배향자석의 설계 및 자성도료의 건조 조건 등의 검토가 필요하다고 생각한다.

• 한국세라믹학회지
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• 제32권8호
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• pp.950-956
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• 1995

Y2O3 thin films were deposited by reactive sputtering of Y target in Ar and O2 gas mixture. Residual stress was measrued by sin2$\psi$ method of x-ray diffraction (XRD) and growth orientation was examined by measuring the relative intensity of (400) plane and (222) plane of Y2O3 films. In the case that Y2O3 films were deposited at 40$0^{\circ}C$ and at low working pressure below 0.05 torr the film had large compressive stress and (111) plane orientation. At working pressure of about 0.10 torr the film had small compressive stress and (100) orientation. Above working pressure of 0.20 torr, the films had nearly zero stress and random orientation. In the case that the (111) oriented film deposited at low working pressure below 0.05 torr, as substrate temperature decreased, (111) orientation increased. In the case the film, with (100) orientation, deposited at working pressure of about 0.10 torr, (100) orientation increased with decresing substrate temperature. These relationship of residual stress and growth orientation can be explained by the relationship of surface energy and strain energy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.395-398
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• 2000

Reactive radio frequency (RF)magnetron sputter with incident angle has been used to deposit AlN thin film on a crystalline Si substrate. (002)Preferred orientation of AlN thin film has been obtained at low sputtering pressure. Also it has been shown that depostion rate of AIN thin film is affected by fraction Ar and $N_2$ partial pressure. But substrate temperature didn't affect depostion rate of AIN thin film . As sputtering pressure increased preferred orientation degraded. The internal stress changed from tensile stress to compressive stress as fraction of $N_2$ partial pressure increased. At low nitrogen partial pressure cermet$^{[1]}$ AIN thin film is obtained.

• The Korean Journal of Ceramics
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• 제6권2호
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• pp.116-119
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• 2000

The a-axis and c-axis prefer oriented SBT thin films could be deposited on Pt(111)/Ti/$SiO_2$$650^{\circ}C$). The c-axis preferred orientation of SBT film can be obtained by Sr deficiency and high compressive stress. However, the a-axis-oriented grains can be formed under stoichiometric Sr content and nearly stress-free state.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.685-687
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• 1999

We prepared ZnO thin film with Facing Targets Sputtering system that can deposit thin film in plasma-free situation and change the deposition condition in wide range. And prepared thin films c-axis orientation and grain size were analyzed by XRD(x-ray dffractometer). In the results, we suggest that FTS system is very suitable to preparing high quality ZnO thin film with good c-axis orientation.