• 제목/요약/키워드: Film defect

검색결과 390건 처리시간 0.03초

회전박막제조기의 진동 및 입자발생이 박막제조에 미치는 영향에 관한 연구 (A Study on the Effect of the Vibration and Particle Generation of a Spin Coater on Thin Film Coating)

  • 허진욱;권태종;정진태;한창수;안강호
    • 한국소음진동공학회논문집
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    • 제11권4호
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    • pp.31-36
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    • 2001
  • A spin coater is a machine to coat wafer or LCD display with thin film. Vibration in the spin coater may be one of main troubles in the coating process. In this paper, we focus on the difference between two spin coaters. Vibration sources are identified by experimental approach and are compared to find the difference between the two spin coaters. Also, the particle concentration is observed by laser particle counter (LPC) for the two spin coaters, when the spin coaxers are working. It is also considered whether the defect rate is proportional to the particle concentration. The result shows that particle generation in the coating process is related to excessive vibration of the spin coater shaft and the particles influence the defect rate of the thin film product.

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Correlation between spin density and Vth instability of IGZO thin-film transistors

  • Park, Jee Ho;Lee, Sohyung;Lee, Hee Sung;Kim, Sung Ki;Park, Kwon-Shik;Yoon, Soo-Young
    • Current Applied Physics
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    • 제18권11호
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    • pp.1447-1450
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    • 2018
  • The electron spin resonance (ESR) detects point defect of the In-Ga-Zn oxide (IGZO) like singly ionized oxygen vacancies and excess oxygen, and get spin density as a parameter of defect state. So, we demonstrated the spin density measurement of the IGZO film with various deposition conditions and it has linear relationship. Moreover, we matched the spin density with the total BTS and the threshold voltage ($V_{th}$) distribution of the IGZO thin film transistors. The total BTS ${\Delta}V_{th}$ and the $V_{th}$ distribution were degraded due to the spin density increases. The spin density is the useful indicator to predict $V_{th}$ instability of IGZO TFTs.

펄스 Nd:YAG 레이저를 이용한 모터용 스테이터 적층코어의 용접특성 [II] - 용접결함의 형성 메커니즘 규명 - (The Weldability of Laminated Stator Core for Motor by Pulsed Nd:YAG Laser [II] - Investigation of Mechanism on Formation of Weld Defect -)

  • 김종도;길병래;이창제
    • Journal of Advanced Marine Engineering and Technology
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    • 제30권5호
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    • pp.636-644
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    • 2006
  • Recently, there were some successful examples that the laser welding was introduced into production line. However, the spread of laser welding is not sufficient in many industries. There are several reasons why it is difficult to penetrate the laser welding into production lines. Because it is different from reflection, absorption and permeation of laser beam according to material and surface condition. Moreover, there are significant problems in processing such as absorption and scattering of beam by the induced plasma or plume. Therefore, understanding of mechanism on formation of weld defect in laser welding of the laminated core for motor is very important. In this paper, it was analyzed in terms of materials which was source of defect in laser welding and conventional arc welding. As a results of analysis, insulation coating film of the laminated core was judged to main factor of weld defect. it could be well aware as tracing carbon volume, and it was deduced that weld defect by insulation coating film was caused by difference of mechanism between the two heat sources.

프라임, 테스트 등급 실리콘 웨이퍼의 표면 결함 특성 (Surface Defect Properties of Prime, Test-Grade Silicon Wafers)

  • 오승환;임현민;이동희;서동혁;김원진;김륜나;김우병
    • 한국재료학회지
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    • 제32권9호
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    • pp.396-402
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    • 2022
  • In this study, surface roughness and interfacial defect characteristics were analyzed after forming a high-k oxide film on the surface of a prime wafer and a test wafer, to study the possibility of improving the quality of the test wafer. As a result of checking the roughness, the deviation in the test after raising the oxide film was 0.1 nm, which was twice as large as that of the Prime. As a result of current-voltage analysis, Prime after PMA was 1.07 × 10 A/cm2 and Test was 5.61 × 10 A/cm2, which was about 5 times lower than Prime. As a result of analyzing the defects inside the oxide film using the capacitance-voltage characteristic, before PMA Prime showed a higher electrical defect of 0.85 × 1012 cm-2 in slow state density and 0.41 × 1013 cm-2 in fixed oxide charge. However, after PMA, it was confirmed that Prime had a lower defect of 4.79 × 1011 cm-2 in slow state density and 1.33 × 1012 cm-2 in fixed oxide charge. The above results confirm the difference in surface roughness and defects between the Test and Prime wafer.

Abnormal Detection in 3D-NAND Dielectrics Deposition Equipment Using Photo Diagnostic Sensor

  • Kang, Dae Won;Baek, Jae Keun;Hong, Sang Jeen
    • 반도체디스플레이기술학회지
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    • 제21권2호
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    • pp.74-84
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    • 2022
  • As the semiconductor industry develops, the difficulty of newly required process technology becomes difficult, and the importance of production yield and product reliability increases. As an effort to minimize yield loss in the manufacturing process, interests in the process defect process for facility diagnosis and defect identification are continuously increasing. This research observed the plasma condition changes in the multi oxide/nitride layer deposition (MOLD) process, which is one of the 3D-NAND manufacturing processes through optical emission spectroscopy (OES) and monitored the result of whether the change in plasma characteristics generated in repeated deposition of oxide film and nitride film could directly affect the film. Based on these results, it was confirmed that if a change over a certain period occurs, a change in the plasma characteristics was detected. The change may affect the quality of oxide film, such as the film thickness as well as the interfacial surface roughness when the oxide and nitride thin film deposited by plasma enhenced chemical vapor deposition (PECVD) method.

짧은 채널 길이의 다결정 실리콘 박막 트랜지스터의 전기적 스트레스에 대한 연구 (A study of electrical stress on short channel poly-Si thin film transistors)

  • 최권영;김용상;한민구
    • 전자공학회논문지A
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    • 제32A권8호
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    • pp.126-132
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    • 1995
  • The electrical stress of short channel polycrystalline silicon (poly-Si) thin film transistor (TFT) has been investigated. The device characteristics of short channel poly-Si TFT with 5$\mu$m channel length has been observed to be significantly degraded such as a large shift in threshold voltage and asymmetric phenomena after the electrical stress. The dominant degradation mechanism in long channel poly-Si TFT's with 10$\mu$m and 20$\mu$m channel length respectively is charage trappling in gate oxide while that in short channel device with 5.mu.m channel length is defect creation in active poly-Si layer. We propose that the increased defect density within depletion region near drain junction due to high electric field which could be evidenced by kink effect, constitutes the important reason for this significant degradation in short channel poly-Si TFT. The proposed model is verified by comparing the amounts of the defect creation and the charge trapping from the strechout voltage.

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디지털 신호처리에 의한 박판두께측정 및 접합경계면의 결함검출에 관한 연구 (A Study on the Thickness Measurement of Thin Film and the Flaw Detection of the Interface by Digital Signal Processing)

  • 김재열;유신;김병현
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 1997년도 춘계학술대회 논문집
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    • pp.123-127
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    • 1997
  • Recently, it is gradually raised necessity that interface is measured accurately and managed in industrial circles and medical world, An Ultrasonic wave transmitted from a focused beam transducer is being expected as a powerful tool for NDE of micro-defect. The ultrasonic NDE of the defect is based on the form of the wave reflected form the interface In this study, regarding to the thickness of film which is in opaque object and thickness measurement was done by MEM-cepstrum analysis of received ultrasonic wave. In measument results, film thickness which is beyond distance resolution capacity was measured accurately. Also, automatically repeated discrimination analysis method can be decided in the category of all kinds of defects on semiconductor package.

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비정질 As-Ge-Te 박막의 물리적 성질 및 스위칭 특성 (The physical properties and switching characteristics of amorphous As-Ge-Te thin film)

  • 이현용;천석표;이영종;정홍배
    • 대한전기학회논문지
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    • 제44권7호
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    • pp.901-907
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    • 1995
  • The switching characteristics of As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film were investigated under d.c. bias. And the frequency dependence of the conductivity was analysed with regard to the temperature dependence, in order to find the physical properties of the As$_{10}$ Ge$_{15}$ Te$_{75}$ thin film ; a characteristic relaxation time (.tau.$_{0}$ ), the spatial density of defect states (N), and the localized wavefunction (.alpha.$^{-1}$ ). It was formed that the threshold voltage depends on thickness, electrode distance, annealing time and temperature, respectively. The threshold voltage is increased as the thickness and the electrode distance is increased, while the threshold voltage is decreased in proportion to the increased annealing time and temperature.

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TEM Stud of GaN Thick Film Crystals Grown by HVPE

  • 송세안;이성국
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.121-121
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    • 1999
  • Gallium nitride (GaN) semiconductor is intensively under investigation for commercialization of short wavelength light emitting devices and laser diodes. One of serious obstacles to overcome is to reduce the defect density in GaN film grown by various techniques such as MOCVD, HVPE, etc. Many research groups including SAIT are trying to improve the defect density to 106-107/cm2 from the level of 108-1010/cm2. We have investigated epitaxial growth behaviour of GaN thin and thick films under hidride vapour phase epitaxy (HVPE) condition. In this report, we present the microstructural and crystallographical characteristics of the GaN films grown on sapphire (0001) substrate which were studied by both conventional and high-resolution transmission electron microscopy (TEM). Also we present some microscopic analysis results obtained from GaN films grown by ELO(dpitzsial lateral overgrowth)-HVPE and from GaN quantum well structures grown by MOCVD. Another serious problem in growing GaN thick film by HVPE is internal micro-cracks. We also comment the origin of the micro-crack.

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Thermal Properties of Diamond Films Deposited by Chemical Vapor Depositon

  • Chae, Hee-Baik;Baik, Young-Joon
    • The Korean Journal of Ceramics
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    • 제3권1호
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    • pp.29-33
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    • 1997
  • Four diamond films were deposited by the microwave plasma assisted chemical vapor deposition method varying CH4 concentration from 2.5 to 10% in the feeding gases. Thermal conductivity was measured on these free standing films by the steady state method from 80 K to 400K. They showed higher thermal conductivity as the film deposited with lower methane concentration. One exception, 7.79% methane concentration deposited film, was observed to be the highest thermal conductivity. Phonon scattering processes were considered to analyze the thermal conductivity with the full Callaway model. The grain size and the concentration of the extended and the point defects were used as the fitting parameters. Microstructure of diamond films was investigated with the scanning electron microscopy and Raman spectroscopy.

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