• Title/Summary/Keyword: Film Information

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A Qualitative Study of Film Creators' Information Behavior Model (영화창작자의 정보활동모형 설계에 관한 질적 연구)

  • Lee, Jung-Yeoun
    • Journal of the Korean Society for Library and Information Science
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    • v.42 no.4
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    • pp.417-439
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    • 2008
  • This study interpreted film-creators' information behavior by reconstructing information behavior in the process of film-planning using human information behavior. Film creators exchange, collect, and analyze information through channels in the information environment so called "the small world." After these processes, they strategically express this information by creating a film. This study concludes that the purpose of film-creating activity and that of everyday life information seeking are intertwined and that co-communication is the most important information channel and information source.

Thin Film Bulk Acoustic Resonators for RF Applications

  • Linh, Mai;Lee, Jae-Young;Yoon, Gi-Wan
    • Journal of information and communication convergence engineering
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    • v.4 no.3
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    • pp.111-113
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    • 2006
  • A new thin film deposition technique of piezoelectric ZnO film and its successful application for film bulk: acoustic resonator (FBAR) devices are presented. The two-step deposition used seems to be able to deposit ZnO film with a highly preferred orientation. The FBAR devices with the ZnO films show an excellent return loss of $35{\sim}50$ dB at $1.5{\sim}2$ GHz.

Fabrication of a Hydrogenated a-Si Photodiode

  • Hur, Chang-Wu
    • Journal of information and communication convergence engineering
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    • v.1 no.1
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    • pp.23-26
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    • 2003
  • A photodiode capable of obtaining a sufficient photo/dark current ratio at both a forward bias state and a reverse bias state is proposed. The photodiode includes a glass substrate, an aluminum film formed as a lower electrode over the glass substrate, an alumina film formed as a schottky barrier over the aluminum film, a hydrogenated amorphous silicon film formed as a photo conduction layer over a portion of the alumina film, and a transparent conduction film formed as an upper electrode over the hydro-generated amorphous silicon film. Growth of high quality alumina($Al_{2}O_{3}$) film using anodizing technology is proposed and analyzed by experiment. We have obtained the film with a superior characteristics

Formation of MgO Thick Film Layer for AC-PDP via Electrophoresis Deposition of Nano-sized MgO Powders

  • Ko, Min-Soo;Kim, Yong-Seog
    • Journal of Information Display
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    • v.8 no.2
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    • pp.25-31
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    • 2007
  • MgO thick film for ac-PDPs was formed via electrophoresis deposition process and its effect on luminance and luminance efficiency were evaluated. The electrophoresis deposition process of MgO thick film was optimized through parametric study and defects levels in MgO powders was evaluated using cathodoluminescence spectra measurements. The results demonstrate a possibility of using MgO thick film as electron emission layer for ac-PDPs.

Effects of Multi-layer Bragg Reflectors on ZnO-based FBAR Devices

  • Lee, Jae-Young;Mai, Lihn;Pham, Van-Su;Yoon, Gi-Wan
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2007.06a
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    • pp.441-444
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    • 2007
  • In this paper, the resonance characteristics of ZnO-based film bulk acoustic resonator (FBAR) devices with high-quality multi-layer reflectors are proposed. The ultrathin Cr film $(300\;\AA-thick)$ between $SiO_2$ film and W film is formed by a sputtering-deposition in order to enhance the adherence at their interfaces. The resonance frequency was observed to vary with the number of the reflectors. This seems to be attributed to the change in the effective thickness of the ZnO film. Also, increasing the number of layers has led to a significant improvement of the series/parallel quality factor.

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Influence of Surface Texturing on the Electrical and Optical Properties of Aluminum Doped Zinc Oxide Thin Films

  • Lee, Jaeh-Yeong;Shim, Joong-Pyo;Jung, Hak-Kee
    • Journal of information and communication convergence engineering
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    • v.9 no.4
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    • pp.461-465
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    • 2011
  • An aluminum doped zinc oxide (AZO) film for front contacts of thin film solar cells, in this work, were deposited by r.f. magnetron sputtering, and then etched in diluted hydrochloric acid solution for different times. Effects of surface texturing on the electro-optical properties of AZO films were investigated. Also, to clarify the light trapping of textured AZO film, amorphous silicon thin film solar cells were fabricated on the textured AZO/glass substrate and the performance of solar cells were studied. After texturing, the spectral haze at the visible range of 400 ~750 nm increased substantially with the etching time, without a change in the resistivity. The conversion efficiency of amorphous Si solar cells with textured AZO film as a front electrode was improved by the increase of short-circuit current density ($J_{sc}$), compared to cell with flat AZO films.

Prediction of Residual Stress Distribution in Multi-Stacked Thin Film by Curvature Measurement and Iterative FEA

  • Choi Hyeon Chang;Park Jun Hyub
    • Journal of Mechanical Science and Technology
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    • v.19 no.5
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    • pp.1065-1071
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    • 2005
  • In this study, residual stress distribution in multi-stacked film by MEMS (Micro-Electro Mechanical System) process is predicted using Finite Element method (FEM). We evelop a finite element program for residual stress analysis (RESA) in multi-stacked film. The RESA predicts the distribution of residual stress field in multi-stacked film. Curvatures of multi­stacked film and single layers which consist of the multi-stacked film are used as the input to the RESA. To measure those curvatures is easier than to measure a distribution of residual stress. To verify the RESA, mean stresses and stress gradients of single and multi layers are measured. The mean stresses are calculated from curvatures of deposited wafer by using Stoney's equation. The stress gradients are calculated from the vertical deflection at the end of cantilever beam. To measure the mean stress of each layer in multi-stacked film, we measure the curvature of wafer with the left film after etching layer by layer in multi-stacked film.

Determinants of Film Consumption (영화 소비 결정 요인)

  • Chon, Bum Soo
    • The Journal of the Korea Contents Association
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    • v.13 no.10
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    • pp.226-233
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    • 2013
  • This study examines determinants of film consumption. Using structural equation modelling, this study explores some factors that explained film consumption based on film tastes and information seeking and socio-demographic factors. The major results are as follows: firstly, the major factor for explaining film consumption was individual tastes for films. The higher the degree of tastes for films, the greater the degree of film consumption. Secondly, there were significant relationships between tastes for films and film related information seeking such as internet search behavior and the use of film blogs. More specifically, the use of film blogs partially explained the degree of film consumption. Thirdly, a demographic factor like gender was highly correlated to film consumption. However, an income factor was not correlated to fim consumption. In conclusion, the degree of film consumption was determined by tastes for flims, the use of film blogs and gender factors.

Comparison of Depth Profiles of CIGS Thin Film by Micro-Raman and XPS (마이크로 라만 및 XPS를 이용한 CIGS 박막의 두께방향 상분석 비교)

  • Beak, Gun Yeol;Jeon, Chan-Wook
    • Current Photovoltaic Research
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    • v.4 no.1
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    • pp.21-24
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    • 2016
  • Chalcopyrite based (CIGS) thin films have considered to be a promising candidates for industrial applications. The growth of quality CIGS thin films without secondary phases is very important for further efficiency improvements. But, the identification of complex secondary phases present in the entire film is crucial issue due to the lack of powerful characterization tools. Even though X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and normal Raman spectroscopy provide the information about the secondary phases, they provide insufficient information because of their resolution problem and complexity in analyzation. Among the above tools, a normal Raman spectroscopy is better for analysis of secondary phases. However, Raman signal provide the information in 300 nm depth of film even the thickness of film is > $1{\mu}m$. For this reason, the information from Raman spectroscopy can't represent the properties of whole film. In this regard, the authors introduce a new way for identification of secondary phases in CIGS film using depth Raman analysis. The CIGS thin films were prepared using DC-sputtering followed by selenization process in 10 min time under $1{\times}10^{-3}torr$ pressure. As-prepared films were polished using a dimple grinder which expanded the $2{\mu}m$ thick films into about 1mm that is more than enough to resolve the depth distribution. Raman analysis indicated that the CIGS film showed different secondary phases such as, $CuIn_3Se_5$, $CuInSe_2$, InSe and CuSe, presented in different depths of the film whereas XPS gave complex information about the phases. Therefore, the present work emphasized that the Raman depth profile tool is more efficient for identification of secondary phases in CIGS thin film.

New Generation Multijunction Solar Cells for Achieving High Efficiencies

  • Lee, Sunhwa;Park, Jinjoo;Kim, Youngkuk;Kim, Sangho;Iftiquar, S.M.;Yi, Junsin
    • Current Photovoltaic Research
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    • v.6 no.2
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    • pp.31-38
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    • 2018
  • Multijunction solar cells present a practical solution towards a better photovoltaic conversion for a wider spectral range. In this review, we compare different types of multi-ijunction solar cell. First, we introduce thin film multijunction solar cell include to the thin film silicon, III-V material and chalcopyrite material. Until now the maximum reported power conversion efficiencies (PCE) of solar cells having different component sub-cells are 14.0% (thin film silicon), 46% (III-V material), 4.4% (chalcopyrite material) respectively. We then discuss the development of multijunction solar cell in which c-Si is used as bottom sub-cell while III-V material, thin film silicon, chalcopyrite material or perovskite material is used as top sub-cells.